公开(公告)号：US09625805B2

公开(公告)日：2017-04-18

申请号：US14729164

申请日：2015-06-03

Applicant: HOYA CORPORATION

Inventor： Kazuya Sakai ,  Ryo Ohkubo ,  Osamu Nozawa ,  Toshiyuki Suzuki

IPC: G03F1/24 ,  G03F1/58 ,  G03F1/80

CPC classification number: G03F1/24 ,  G03F1/58 ,  G03F1/80

Abstract: The present invention is a reflective mask blank used to fabricate a reflective mask, which has a laminated structure of a multilayer reflective film, an absorber film and an etching mask film in this order on a substrate, wherein the etching mask film comprises a material containing chromium, the absorber film comprises a material containing tantalum, a highly oxidized layer is formed on the surface layer of the absorber film on the opposite side from the substrate, and a Ta 4f narrow spectrum of the highly oxidized layer when analyzed by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of more than 23 eV.

公开(公告)号：US20150293441A1

公开(公告)日：2015-10-15

申请号：US14443689

申请日：2013-11-15

Applicant: HOYA CORPORATION

Inventor： Hiroaki Shishido ,  Atsushi Kominato ,  Osamu Nozawa ,  Toshiharu Kikuchi

IPC: G03F1/50

CPC classification number: G03F1/50 ,  C03C3/06 ,  C03C17/3435 ,  C03C2218/32 ,  C03C2218/328 ,  C03C2218/34 ,  G03F1/38 ,  G03F1/60

Abstract: Provided are a mask blank for which worsening of flatness has been inhibited, a transfer mask, a method of manufacturing a mask blank, a method of manufacturing a transfer mask, and a method of manufacturing a semiconductor device using this transfer mask. The mask blank is a mask blank provided with a thin film on a main surface of a glass substrate, wherein the glass substrate has a hydrogen content of less than 7.4×1018 molecules/cm3, the thin film is made of a material containing tantalum and being substantially free of hydrogen, and the thin film is formed in contact with the main surface of the glass substrate.

Abstract translation: 提供了一种掩模坯料，其平面度恶化被抑制，转印掩模，掩模板的制造方法，制造转印掩模的方法以及使用该转印掩模制造半导体器件的方法。 掩模坯料是在玻璃基板的主表面上设置有薄膜的掩模坯料，其中玻璃基板的氢含量小于7.4×10 18分子/ cm 3，薄膜由含钽的材料制成， 基本上不含氢，并且薄膜形成为与玻璃基板的主表面接触。

公开(公告)号：US09029048B2

公开(公告)日：2015-05-12

申请号：US13628552

申请日：2012-09-27

Applicant: Hoya Corporation

Inventor： Kazuya Sakai ,  Ryo Ohkubo ,  Osamu Nozawa ,  Toshiyuki Suzuki

IPC: G03F1/50 ,  G03F1/58

CPC classification number: G03F1/58 ,  G03F1/50 ,  G03F1/80

Abstract: The present invention is a mask blank used to fabricate a transfer mask, which has a laminated structure of a light shielding film and an etching mask film in this order on a transparent substrate, wherein the etching mask film comprises a material containing chromium, the light shielding film comprises a material containing tantalum, a highly oxidized layer is formed on the surface layer of the light shielding film on the opposite side from the transparent substrate, and a Ta 4 f narrow spectrum of the highly oxidized layer analyzed by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of more than 23 eV.

Abstract translation: 本发明是用于在透明基板上依次制造具有遮光膜和蚀刻掩模膜的层叠结构的转印掩模的掩模坯料，其中蚀刻掩模膜包括含铬的材料，光 屏蔽膜包括含有钽的材料，在与透明基板相反的一侧的遮光膜的表面层上形成高度氧化层，并且通过X射线光电子分析的高氧化层的Ta 4 f窄谱 光谱学具有大于23eV的结合能的最大峰。

公开(公告)号：US20140205937A1

公开(公告)日：2014-07-24

申请号：US14222794

申请日：2014-03-24

Applicant: HOYA CORPORATION

Inventor： Noriyuki Sakaya ,  Osamu Nozawa

IPC: G03F1/26 ,  G03F7/20

CPC classification number: G03F1/26 ,  B82Y10/00 ,  B82Y30/00 ,  G03F1/28 ,  G03F1/58 ,  G03F7/20

Abstract: A mask blank is used for manufacturing a binary mask adapted to be applied with ArF excimer laser exposure light and has a light-shielding film for forming a transfer pattern on a transparent substrate. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for the exposure light. The lower layer is made of a material containing tantalum and nitrogen and has a thickness of 33 nm or more. The upper layer is made of a material containing tantalum and oxygen and has a thickness of 3 nm or more. The phase difference between the exposure light transmitted through the light-shielding film and the exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 60 degrees or less.

Abstract translation: 掩模坯料用于制造适于施加ArF准分子激光曝光光的二值掩模，并且具有用于在透明基板上形成转印图案的遮光膜。 遮光膜具有下层和上层的层叠结构，并且曝光用光的密度为2.8以上。 下层由含有钽和氮的材料制成，厚度为33nm以上。 上层由含有钽和氧的材料制成，厚度为3nm以上。 透过遮光膜的曝光光与在空气中透射距离等于遮光膜的厚度的曝光光的相位差为60度以下。