中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

109 records (took 0.016 seconds)

    Method for Producing an Area having Reduced Electrical Conductivity Within a Semiconductor Layer and Optoelectronic Semiconductor Element
    51.
    发明申请
    Method for Producing an Area having Reduced Electrical Conductivity Within a Semiconductor Layer and Optoelectronic Semiconductor Element 有权
    在半导体层和光电子半导体元件内制造具有降低导电性的区域的方法

    公开(公告)号：US20090008751A1

    公开(公告)日：2009-01-08

    申请号：US11597928

    申请日：2005-04-25

    Applicant: Stefan Illek ,  Wilhelm Stein ,  Robert Walter ,  Ralph Wirth

    Inventor： Stefan Illek ,  Wilhelm Stein ,  Robert Walter ,  Ralph Wirth

    IPC: H01L23/58 ,  C23C14/00

    CPC classification number: H01L21/02461 ,  H01L21/02463 ,  H01L21/02554 ,  H01L21/02573 ,  H01L21/02631 ,  H01L21/7605 ,  H01L33/0062 ,  H01L33/42

    Abstract: In a method for producing at least at least one area (8) with reduced electrical conductivity within an electrically conductive III-V semiconductor layer (3), a ZnO layer (1) is applied to the area (8) of the semiconductor layer (3) and subsequently annealed at a temperature preferably between 300° C. and 500° C. The ZnO layer (1) is preferably deposited on the III-V semiconductor layer (3) at a temperature of less than 150° C., preferably at a temperature greater than or equal to 25° C. and less than or equal to 120° C. The area (8) with reduced electrical conductivity is preferably located in a radiation emitting optoelectronic device between the active zone (4) and a connecting contact (7) in order to reduce current injection into the areas of the active zone (4) located opposite to the connecting contact (7).

    Abstract translation: 在用于在导电III-V半导体层（3）内制造具有降低的导电性的至少一个区域（8）的方法中，将ZnO层（1）施加到半导体层的区域（8） 3），然后在优选300℃至500℃的温度下退火。优选在低于150℃的温度下将ZnO层（1）沉积在III-V半导体层（3）上，优选 在大于或等于25℃且小于或等于120℃的温度下，具有降低的导电性的区域（8）优选位于激活区域（4）和连接 触点（7），以便减少电流注入位于与连接触点（7）相对的有源区域（4）的区域中。

    Method for roughening a surface of a body, and optoelectronic component
    53.
    发明申请
    Method for roughening a surface of a body, and optoelectronic component 审中-公开
    用于粗糙化身体表面的方法和光电子部件

    公开(公告)号：US20060151428A1

    公开(公告)日：2006-07-13

    申请号：US10541298

    申请日：2003-12-18

    Applicant: Reiner Windisch ,  Ralph Wirth ,  Heribert Zull

    Inventor： Reiner Windisch ,  Ralph Wirth ,  Heribert Zull

    IPC: C23F1/00 ,  H01L33/00

    CPC classification number: H01L33/22 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086

    Abstract: A method for roughening a surface of a body (1), having the following steps of: coating the surface with a mask layer (2), applying preformed mask bodies (3) on the mask layer (2), etching through the mask layer (2) at locations not covered by mask bodies (3), and etching the body (1) at locations of its surface that are free of the mask layer (2).

    Abstract translation: 一种用于使体（1）的表面粗糙化的方法，具有以下步骤：用掩模层（2）涂覆表面，将预成型的掩模体（3）施加到掩模层（2）上，通过掩模层 （2）在未被掩模体（3）覆盖的位置处，并且在其表面的没有掩模层（2）的位置处蚀刻主体（1）。

    Radiation-emitting semiconductor chip and method for producing such a semiconductor chip
    55.
    发明申请
    Radiation-emitting semiconductor chip and method for producing such a semiconductor chip 有权
    辐射发射半导体芯片及其制造方法

    公开(公告)号：US20050045978A1

    公开(公告)日：2005-03-03

    申请号：US10883270

    申请日：2004-06-30

    Applicant: Michael Zoelfl ,  Wilhelm Stein ,  Ralph Wirth

    Inventor： Michael Zoelfl ,  Wilhelm Stein ,  Ralph Wirth

    IPC: H01L31/00 ,  H01L33/14 ,  H01L33/38

    CPC classification number: H01L33/38 ,  H01L33/145 ,  H01L33/387

    Abstract: A radiation-emitting semiconductor chip (1) having a semiconductor layer sequence (3) comprising at least one active layer (2) that generates an electromagnetic radiation, and having an electrical contact layer (7) comprising a connection region (4) and a current injection region (5), which is arranged at a distance beside the connection region (4) and is electrically connected. In accordance with a first embodiment, an absorbent brightness setting layer (12) is applied between the connection region (4) and the current injection region (5) and/or, as seen from the connection region (4), outside the current injection region (5) on a front-side radiation coupling-out area (10) of the semiconductor layer sequence (3). The brightness setting layer absorbs in a targeted manner part of a radiation generated in the semiconductor layer sequence (3). In accordance with a second embodiment, a partly insulating brightness setting layer (6) is arranged between the connection region (4) and the active layer (2). The brightness setting layer comprises at least one electrically insulating current blocking region (62) and at least one electrically conductive current passage region (61) via which the connection region (4) is electrically conductively connected to the semiconductor layer sequence (3) in such a way that, during operation of the semiconductor chip (1), part of the electromagnetic radiation generated in the chip is generated below the connection region (4) and is absorbed by the latter. Methods for producing such semiconductor chips are furthermore specified.

    Abstract translation: 一种辐射发射半导体芯片（1），其具有包括产生电磁辐射的至少一个有源层（2）的半导体层序列（3），并且具有包括连接区域（4）和 电流注入区域（5），其被布置在连接区域（4）旁边并且被电连接。 根据第一实施例，在连接区域（4）和电流注入区域（5）之间施加吸收性亮度设定层（12）和/或从连接区域（4）看，在电流注入之外 区域（5）在半导体层序列（3）的前侧辐射耦合输出区域（10）上。 亮度设定层以目标方式吸收在半导体层序列（3）中产生的辐射的一部分。 根据第二实施例，在连接区域（4）和有源层（2）之间布置有部分绝缘的亮度设定层（6）。 亮度设定层包括至少一个电绝缘电流阻挡区域（62）和至少一个导电电流通道区域（61），连接区域（4）经由该导电电流通道区域（61）导电地连接到半导体层序列（3） 在半导体芯片（1）的操作期间，在芯片内产生的电磁辐射的一部分产生在连接区域（4）的下方并被后者吸收的方式。 进一步说明制造这种半导体芯片的方法。

    Light-emitting diode
    57.
    发明授权
    Light-emitting diode 有权

    公开(公告)号：US06518601B2

    公开(公告)日：2003-02-11

    申请号：US09726120

    申请日：2000-11-30

    Applicant: Ralph Wirth

    Inventor： Ralph Wirth

    IPC: H01L3300

    CPC classification number: H01L33/20 ,  H01L33/14 ,  H01L33/32

    Abstract: A light-emitting diode (1) comprises a window layer (4) above an active layer (3), the window layer having edge webs (6) profiled in a sawtooth-shaped manner. Edge lines (11) with which the current is injected into the active layer (3) proceed above the edge webs (6). The light-emitting diode (1) is distinguished by an especially high output efficiency.

    Optoelectric component
    60.
    发明授权
    Optoelectric component 失效
    光电元件

    公开(公告)号：US08785951B2

    公开(公告)日：2014-07-22

    申请号：US12737980

    申请日：2009-08-04

    Applicant: Ralph Wirth

    Inventor： Ralph Wirth

    IPC: H01L33/50

    CPC classification number: H01L33/483 ,  H01L33/505 ,  H01L33/507 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An optoelectronic component (1) is specified, comprising a connection carrier (2) on which a radiation-emitting semiconductor chip (3) is arranged, and a conversion element (4) fixed to the connection carrier (2). The conversion element (4) spans the semiconductor chip (3) in such a way that the semiconductor chip (3) is surrounded by the conversion element (4) and the connection carrier (2), and the conversion element (4) consists of one of the following materials: ceramic, glass ceramic.

    Abstract translation: 规定了光电子部件（1），其包括布置有发射辐射半导体芯片（3）的连接载体（2）和固定到连接载体（2）的转换元件（4）。 转换元件（4）以半导体芯片（3）被转换元件（4）和连接载体（2）包围的方式跨越半导体芯片（3），转换元件（4）由 以下材料之一：陶瓷，玻璃陶瓷。

Patent Agency Ranking