公开(公告)号：US09417425B2

公开(公告)日：2016-08-16

申请号：US14341344

申请日：2014-07-25

Applicant: GlobalMEMS TAIWAN CORPORATION LIMITED

Inventor： Su-Jhen Lin ,  Ming-Ching Wu

IPC: G02B7/02 ,  H02K41/02 ,  G02B7/08 ,  G02B7/182 ,  G02B26/08 ,  H02K33/18 ,  G02B7/18 ,  G02B26/10 ,  B81B3/00 ,  H02K35/00

CPC classification number: G02B7/08 ,  B81B3/00 ,  B81B3/0018 ,  B81B2201/02 ,  B81B2201/04 ,  B81B2201/042 ,  G02B7/18 ,  G02B7/182 ,  G02B26/0833 ,  G02B26/085 ,  G02B26/101 ,  H02K33/18 ,  H02K35/00 ,  H02K41/02

Abstract: A micro-electromechanical system (MEMS) carrier formed by a typical surface micro-machining and bulk micro-machining process on a silicon substrate, having a frame, a movable carrier element, a conductive coil, two return springs and a pair of permanent magnets. The movable carrier element is formed within the frame and movable along a path, the conductive coil is formed on or embedded in the movable carrier element. The two return springs are formed between the movable carrier element and the frame thereby connecting the movable carrier element to the frame and providing a return force to the carrier element, and the pair of permanent magnets are formed a magnetic field for co-acting with the conductive coil for generating an electromagnetic Lorentz force to drive the movable carrier element to move against the return force of the two return springs.

Abstract translation: 通过在硅衬底上的典型的表面微加工和体微加工工艺形成的微机电系统（MEMS）载体，其具有框架，可移动载体元件，导电线圈，两个复位弹簧和一对永磁体 。 可移动的载体元件形成在框架内并沿着路径移动，导电线圈形成在可动载体元件上或嵌入可移动的载体元件中。 两个复位弹簧形成在可移动的载体元件和框架之间，从而将可移动的载体元件连接到框架上，并向载体元件提供返回力，并且该对永久磁铁形成一个磁场，用于与 导电线圈，用于产生电磁洛伦兹力，以驱动可移动的载体元件克服两个复位弹簧的返回力移动。

公开(公告)号：US09360443B2

公开(公告)日：2016-06-07

申请号：US13668760

申请日：2012-11-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moon Chul Lee ,  Duck Hwan Kim ,  In Sang Song ,  Jea Shik Shin

IPC: G01N27/04 ,  H03H9/24 ,  H03H3/007 ,  H03H9/02

CPC classification number: G01N27/04 ,  B81B2201/02 ,  H03H3/0072 ,  H03H3/0077 ,  H03H9/2463 ,  H03H2009/02346 ,  H03H2009/0244

Abstract: A nano scale resonator, a nano scale sensor, and a fabrication method thereof are provided. The nano scale resonator includes a resonance unit of nano scale configured to resonate based on an applied signal, and an anchor on a substrate, the anchor being configured to support the resonance unit, the anchor having an air gap within boundaries of the anchor, the resonance unit, and the substrate, the air gap being configured to reflect a vertical wave occurring in the resonance unit.

Abstract translation: 提供了纳米级谐振器，纳米级传感器及其制造方法。 所述纳米级谐振器包括纳米级的谐振单元，其被配置为基于所施加的信号而谐振，并且所述锚固件被构造成支撑所述谐振单元，所述锚固件在所述锚的边界内具有气隙， 谐振单元和基板，气隙被配置为反映在谐振单元中发生的垂直波。

公开(公告)号：US20150370063A1

公开(公告)日：2015-12-24

申请号：US14410211

申请日：2013-06-12

Applicant: SILEX MICROSYSTEMS AB

Inventor： Peter AGREN

IPC: G02B26/08 ,  B81B3/00 ,  G01D5/24 ,  B81C1/00

CPC classification number: G02B26/0841 ,  B81B3/0021 ,  B81B3/0045 ,  B81B2201/02 ,  B81B2201/03 ,  B81B2203/04 ,  B81C1/00357 ,  B81C1/00619 ,  G01D5/24 ,  G02B26/085 ,  H01L23/481 ,  H01L23/5225 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device, includes a semiconductor substrate (10) having a first (12a) and a second (12b) side. There is provided at least one via (15) extending through the substrate (10) having first (16a) and second (16b) end surfaces, the first end surface (16a) constituting a transducer electrode for interacting with a movable element (14) arranged at the first side (12a) of the substrate (10). A shield (17) is provided on and covers at least part of the first side (12a) of the substrate (10), the shield/mask (17) including a conductive layer (19a) and an insulating material layer (19b) provided between the substrate (10) and the conductive layer (19a). The mask has an opening (18) exposing only a part of the first surface (16a) of the via. Preferably the opening (18) in the mask is precisely aligned with the movable element, and the area of the opening is accurately defined.

Abstract translation: 半导体器件包括具有第一（12a）和第二（12b）侧的半导体衬底（10）。 提供至少一个通过具有第一（16a）和第二（16b）端面的衬底（10）延伸的通孔（15），第一端面（16a）构成用于与可移动元件（14）相互作用的换能器电极， 布置在基板（10）的第一侧（12a）处。 在衬底（10）的第一侧（12a）的至少一部分上设置有屏蔽（17），所述屏蔽/掩模（17）包括导电层（19a）和绝缘材料层（19b） 在所述基板（10）和所述导电层（19a）之间。 掩模具有仅露出通孔的第一表面（16a）的一部分的开口（18）。 优选地，掩模中的开口（18）与可移动元件精确对准，并且开口的区域被精确地限定。

公开(公告)号：US20240190700A1

公开(公告)日：2024-06-13

申请号：US18436950

申请日：2024-02-08

Applicant: Amkor Technology Singapore Holding Pte. Ltd.

Inventor： Ki Yeul YANG ,  Kyung Han RYU ,  Seok Hun YUN ,  Bora BALOGLU ,  Hyun CHO ,  Ramakanth ALAPATI

IPC: B81C1/00 ,  B81B7/00 ,  H01L23/48

CPC classification number: B81C1/00182 ,  B81B7/007 ,  B81C1/00158 ,  B81C1/00301 ,  H01L23/481 ,  B81B2201/02

Abstract: In one example, an electronic device includes a semiconductor sensor device having a cavity extending partially inward from one surface to provide a diaphragm adjacent an opposite surface. A barrier is disposed adjacent to the one surface and extends across the cavity, the barrier has membrane with a barrier body and first barrier strands bounded by the barrier body to define first through-holes. The electronic device further comprises one or more of a protrusion pattern disposed adjacent to the barrier structure, which can include a plurality of protrusion portions separated by a plurality of recess portions; one or more conformal membrane layers disposed over the first barrier strands; or second barrier strands disposed on and at least partially overlapping the first barrier strands. The second barrier strands define second through-holes laterally offset from the first through-holes. Other examples and related methods are also disclosed herein.

公开(公告)号：US11915924B2

公开(公告)日：2024-02-27

申请号：US17030874

申请日：2020-09-24

Applicant: DENSO CORPORATION ,  KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO

Inventor： Megumi Suzuki ,  Yasuo Yamamoto ,  Teruhisa Akashi

IPC: B81C1/00 ,  B81B7/00 ,  H01L21/02 ,  H01L23/08 ,  H01L23/10 ,  H01L21/311 ,  H01L29/84 ,  G01P15/08 ,  G01P15/125

CPC classification number: H01L21/02164 ,  B81B7/0035 ,  B81B7/0061 ,  B81C1/00293 ,  B81C1/00349 ,  H01L21/31111 ,  H01L23/08 ,  H01L23/10 ,  H01L29/84 ,  B81B2201/02 ,  B81C2201/019 ,  B81C2203/03 ,  G01P15/0802 ,  G01P15/125

Abstract: A recess is formed in one silicon substrate. A silicon oxide film is formed in another one silicon substrate at a portion space apart from a space-to-be-formed region. The silicon oxide film has a groove surrounding the space-to-be-formed region and extending to an outer periphery of the other one silicon substrate. Further, the other one silicon substrate and the one silicon substrate are directly bonded to each other via the silicon oxide film so as to cover the groove. A gas discharge passage, a stacking structure of the silicon substrates and the silicon oxide film are formed, and the space is formed inside the stacking structure by the recess. Then, by the heat treatment, the gas inside the space is discharged to the outside of the stacking structure through the gas discharge passage.

公开(公告)号：US11714012B2

公开(公告)日：2023-08-01

申请号：US16855397

申请日：2020-04-22

Applicant: Paul D Okulov

Inventor： Paul D Okulov

IPC: G01L1/04 ,  G01L1/00 ,  G01M5/00

CPC classification number: G01L1/005 ,  G01L1/04 ,  G01L1/044 ,  G01M5/0033 ,  G01M5/0083 ,  B81B2201/02

Abstract: A low power consumption multi-contact micro electro-mechanical strain/displacement sensor and miniature autonomous self-contained systems for recording of stress and usage history with direct output suitable for fatigue and load spectrum analysis are provided. In aerospace applications the system can assist in prediction of fatigue of a component subject to mechanical stresses as well as in harmonizing maintenance and overhauls intervals. In alternative applications, i.e. civil structures, general machinery, marine and submarine vessels, etc., the system can autonomously record strain history, strain spectrum or maximum values of the strain over a prolonged period of time using an internal power supply or a power supply combined with an energy harvesting device. The sensor is based on MEMS technology and incorporates a micro array of flexible micro or nano-size cantilevers. The system can have extremely low power consumption while maintaining precision and temperature/humidify independence.

公开(公告)号：US20190236435A1

公开(公告)日：2019-08-01

申请号：US16381955

申请日：2019-04-11

Applicant: Hahn-Schickard-Gesellschaft fur angewandte Forschung e.V.

Inventor： Sven SPIETH

IPC: G06M1/08 ,  G06M1/27 ,  A61L2/28 ,  B81B3/00 ,  G06M1/10 ,  G06M1/06 ,  G06K19/07

CPC classification number: G06M1/083 ,  A61L2/28 ,  B81B3/0067 ,  B81B2201/02 ,  G06K19/0723 ,  G06M1/06 ,  G06M1/101 ,  G06M1/27

Abstract: A device has a latching mechanism including a catch element having at least two catches, and a pawl configured to engage in a catch interstice between two catches. The catch element is movable in relation to the pawl in a freewheeling direction, and a movement of the catch element in relation to the pawl in a blocking direction may be blocked by means of the pawl. The device further includes a deflectable actuator configured to move the catch element and the pawl relative to each other on a catch-by-catch basis in the freewheeling direction by means of deflection. According to the invention, the device also includes an electric component configured to change its electric property as a function of the catch-wise movement of the catch element in relation to the pawl.

公开(公告)号：US20190210867A1

公开(公告)日：2019-07-11

申请号：US16225419

申请日：2018-12-19

Applicant: BOE Technology Group Co., Ltd.

Inventor： Lei ZHAO

IPC: B81B7/02 ,  H01L41/297 ,  H01L41/09 ,  B81C1/00

CPC classification number: B81B7/02 ,  B81B2201/02 ,  B81C1/00047 ,  B81C1/00531 ,  B81C1/00539 ,  H01L41/09 ,  H01L41/297

Abstract: The present disclosure provides an ultrasonic transducer and a method for manufacturing an ultrasonic transducer, a display substrate and a method for manufacturing a display substrate. The method for manufacturing the ultrasonic transducer includes: forming a via hole in a substrate; forming a structural layer on a side of the substrate, the structural layer cover the via hole; and etching the structural layer from a side of the substrate away from the structural layer by using the substrate formed with the via hole as a blocking layer, to form a cavity at a position of the structural layer corresponding to that of the via hole.

公开(公告)号：US20180362331A1

公开(公告)日：2018-12-20

申请号：US15739913

申请日：2017-03-03

Applicant: Goertek Inc.

Inventor： Junkai ZHAN ,  Zonglin ZHOU ,  Guanxun Qiu ,  Mengjin CAI

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0058 ,  B81B2201/02 ,  B81C1/00261 ,  B81C3/001

Abstract: A method for forming a filter net on an MEMS sensor and an MEMS sensor are disclosed. The method comprises the following steps: disposing a dissociable adhesive tape on a base material, and forming a filter net on an adhesive surface of the dissociable adhesive tape; transferring the filter net on a film to form a self-adhesive coiled material; and transferring and adhering the filter net on the self-adhesive coiled material to collecting a hole of the MEMS sensor. The filter net formed by the method have fine and uniform meshes, and a yield is high. In addition, the method is suitable for large-scale and industrialized production.

公开(公告)号：US20180348259A1

公开(公告)日：2018-12-06

申请号：US16040621

申请日：2018-07-20

Applicant: International Business Machines Corporation

Inventor： Bing Dang ,  John Knickerbocker ,  Yang Liu ,  Maurice Mason ,  Lubomyr T. Romankiw

IPC: G01R1/073 ,  H01L23/00 ,  B81C1/00 ,  G01R31/26 ,  B81B3/00 ,  B23K35/00

CPC classification number: G01R1/0735 ,  B23K35/00 ,  B81B3/00 ,  B81B2201/02 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81C1/00626 ,  G01R31/2607 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05644 ,  H01L2224/06131 ,  H01L2224/06135 ,  H01L2224/06136 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/1112 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/13017 ,  H01L2224/13019 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13564 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/1366 ,  H01L2224/13663 ,  H01L2224/73207 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/381 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/01104

Abstract: A method of forming surface protrusions on an article, and the article with the protrusions attached. The article may be an Integrated Circuit (IC) chip, a test probe for the IC chip or any suitable substrate or nanostructure. The surface protrusions are electroplated to a template or mold wafer, transferred to the article and easily separated from the template wafer. Thus, the attached protrusions may be, e.g., micro-bumps or micro pillars on an IC chip or substrate, test probes on a probe head, or one or more cantilevered membranes in a micro-machine or micro-sensor or other micro-electro-mechanical systems (MEMS) formed without undercutting the MEMS structure.