Abstract:
An optical measurement system is disclosed for evaluating samples with multi-layer thin film stacks. The optical measurement system includes a reference ellipsometer and one or more non-contact optical measurement devices. The reference ellipsometer is used to calibrate the other optical measurement devices. Once calibration is completed, the system can be used to analyze multi-layer thin film stacks. In particular, the reference ellipsometer provides a measurement which can be used to determine the total optical thickness of the stack. Using that information coupled with the measurements made by the other optical measurement devices, more accurate information about individual layers can be obtained.
Abstract:
An optical wavelength analyser including: an entrance slit (4) for receiving a light beam (3) including signals with various wavelengths and passings the beam at least partly; a diffractor (6, 7, 9) for receiving the passed beam and diffracting the signals dependent on their wavelength; a detector (8) including adjacent detector elements (32, 33, 35, 36, 38, 39) for receiving the diffracted signals and generating their output signals; a processor (21) for determining the wavelengths from the output signals, in which the received light beam has a spatially uniform intensity; the diffractor diffracts each signal on a different detector element subset, consisting of at least a first element (32, 33, 35, 36, 38, 39) for receiving at least a first signal with a first signal level; the processor determines each signal's wavelength dependent on the first signal level and a calibration value.
Abstract:
An ellipsometric apparatus provides a rotating focused probe beam directed to impinge a sample in any direction. A rotating stage rotates the wafer into a linear travel range defined by a single linear axis of a single linear stage. As a result, an entire wafer is accessed for measurement with the single linear stage having a travel range of only half the wafer diameter. The reduced single linear travel results in a small travel envelope occupied by the wafer and consequently in a small footprint of the apparatus. The use of a rotating probe beam permits measurement of periodic structures along a preferred direction while permitting the use of a single reduced motion stage.
Abstract:
A method and apparatus for characterizing and screening an array of material samples is disclosed. The apparatus includes a sample block having a plurality of regions for containing the material samples, a polarized light source to illuminate the materials, an analyzer having a polarization direction different than the polarization direction of the polarized light source, and a detector for analyzing changes in the intensity of the light beams. The light source, together with a polarizer, may include a plurality of light beams to simultaneously illuminate the entire array of materials with linearly polarized light so that characterization and screening can be performed in parallel. In addition, the materials in the sample block maybe subjected to different environmental conditions or mechanical stresses, and the detector analyzes the array as a function of the different environmental conditions or mechanical stresses.
Abstract:
An apparatus for detecting a pretilt angle is comprised of a light source 1, a polarizer 2, a liquid-crystal cell 3, a quarter-wave plate 4, an analyzer 5, a photodetector 6, and a processing device. The processing device receives from the photodetector transmitted light intensities of light that is transmitted through the liquid-crystal cell 3 at a plurality of light incident angles. The processing device calculates Stokes parameters corresponding to the plurality of light incident angles based upon the transmitted light intensity corresponding to the plurality of light incident angles. Furthermore, an apparent retardation corresponding to the plurality of light incident angles is determined based upon the Stokes parameters corresponding to the plurality of light incident angles. The pretilt angle of the liquid-crystal cell 3 is determined based upon the determined apparent retardation corresponding to the plurality of light incident angles.
Abstract:
Disclosed is an apparatus for monitoring wavelength division multiplexed optical signal performance transmitted onto a main optical path. In particular, the apparatus includes: an amplified spontaneous light emitter for generating amplified spontaneous emission and transmitting the same to a reference optical path; at least one fiber bragg grating for sending out an amplified spontaneous emission having a reference wavelength by reflecting or absorbing only part of amplified spontaneous emission transmitted onto the reference optical path that consists with a reflection wavelength or an absorbance wavelength, in which a predetermined reflection wavelength or an absorbance wavelength are separately disposed on the reference optical path; an optical switch for outputting at least one of the wavelength division multiplexed optical signals branched from the main optical path or one of the amplified spontaneous emission including the reference wavelengths, in response to a switching control signal input; a tunable optical filter, of which filter characteristics vary corresponding to a filtering control signal with a designated form, for filtering off the optical signal outputted from the optical switch using the varied filter characteristics, and for outputting the filtered optical signal; and a control unit for analyzing a photo diode that converts an output of the tunable optical filter photoelectrically and an output of the photo diode in accordance with a predetermined algorithm, and for measuring an optical wavelength, an optical power and an optical signal to noise ratio of a wavelength division multiplexed optical signal based on the analyzed reference wavelength.
Abstract:
Before the diffraction from a diffracting structure on a semiconductor wafer is measured, where necessary, the film thickness and index of refraction of the films underneath the structure are first measured using spectroscopic reflectometry or spectroscopic ellipsometry. A rigorous model is then used to calculate intensity or ellipsometric signatures of the diffracting structure. The diffracting structure is then measured using a spectroscopic scatterometer using polarized and broadband radiation to obtain an intensity or ellipsometric signature of the diffracting structure. Such signature is then matched with the signatures in the database to determine the grating shape parameters of the structure.
Abstract:
An apparatus is disclosed for obtaining ellipsometric measurements from a sample. A probe beam is focused onto the sample to create a spread of angles of incidence. The beam is passed through a quarter waveplate retarder and a polarizer. The reflected beam is measured by a detector. In one preferred embodiment, the detector includes eight radially arranged segments, each segment generating an output which represents an integration of multiple angle of incidence. A processor manipulates the output from the various segments to derive ellipsometric information.
Abstract:
Systems and methods of measuring optical pulses are described. In one aspect, an optical pulse measurement system includes an optical signal divider and an optical signal conversion system. The optical signal divider has an optical input for receiving an input optical signal, multiple optical outputs, and a set of multiple optical channels. The optical channels are coupled between the optical input and respective optical outputs and are operable to delay propagation of optical signals, which are divided from the input optical signal, from the optical input to respective optical outputs by different respective amounts of time. The optical signal conversion system is coupled to the optical signal divider optical outputs and is operable to convert temporal intensity distributions of light received from the optical signal divider optical outputs into respective spatial intensity distributions in parallel.
Abstract:
A distributed fiberoptic radiation sensor is described which may employ one or more radiation sensor elements distributed in a single optical fiber. Such optical fibers may be placed on surfaces, or even within parts, to unobtrusively measure radiation in precise and even difficult to reach locations. Different sensor elements may respond to different radiation types and wavelength ranges, with each sensor element causing a different wavelength of light to be emitted or absorbed within the fiber. By employing an appropriate combination of detection methods at the ends of the fiber, the distributed sensor may provide type and calorimetric discrimination of radiation incident on one or more distinguishable locations. The radiation information thus detected may be integrated, if desired, to obtain corresponding real-time dose information. With such integration, the device becomes a distributed real-time dosimeter. In another embodiment, the particular radiation sensors distributively employed may undergo permanent change in absorption characteristics. Such a device infers a total radiation dose over a particular period by measuring a change in optical response between the beginning and the end of the particular period.