METHOD OF FORMING ELECTROMECHANICAL TRANSDUCER FILM, ELECTROMECHANICAL TRANSDUCER FILM, ELECTROMECHANICAL TRANSDUCER ELEMENT, AND LIQUID DISCHARGE HEAD
    63.
    发明申请
    METHOD OF FORMING ELECTROMECHANICAL TRANSDUCER FILM, ELECTROMECHANICAL TRANSDUCER FILM, ELECTROMECHANICAL TRANSDUCER ELEMENT, AND LIQUID DISCHARGE HEAD 审中-公开
    形成机电传感器膜的方法,机电传感器膜,机电传感器元件和液体放电头

    公开(公告)号:US20140210913A1

    公开(公告)日:2014-07-31

    申请号:US14243177

    申请日:2014-04-02

    Abstract: Disclosed is an electromechanical transducer film forming method including a surface modification process; an application process; and processes of drying, thermally decomposing, and crystallizing sol-gel solution applied to a portion of a surface of a first electrode. An electromechanical transducer film is formed on a desired pattern area on the surface of the first electrode by repeating the above processes. In the application process, each of dots of the sol-gel solution applied by the inkjet method drops onto both a first area inside the desired pattern area and a second area outside the desired pattern area. The first area is a hydrophilic area on the surface of the first electrode, and the second area is a hydrophobic area on the surface of the first electrode. The hydrophilic area and the hydrophobic area have been modified by the surface modification process.

    Abstract translation: 公开了一种包括表面改性工艺的机电换能器成膜方法; 申请流程; 以及施加到第一电极的表面的一部分上的溶胶 - 凝胶溶液的干燥,热分解和结晶过程。 通过重复上述过程,在第一电极的表面上的期望图案区域上形成机电换能器膜。 在涂布过程中,通过喷墨法施加的溶胶 - 凝胶溶液的每个点落在期望图案区域内的第一区域和期望图案区域外的第二区域上。 第一区域是第一电极表面上的亲水区域,第二区域是第一电极表面上的疏水区域。 亲水区域和疏水区域已经通过表面改性过程进行了修饰。

    Gate drive circuit with overdrive protection
    65.
    发明授权
    Gate drive circuit with overdrive protection 有权
    栅极驱动电路具有过驱动保护

    公开(公告)号:US08513983B2

    公开(公告)日:2013-08-20

    申请号:US13041689

    申请日:2011-03-07

    Applicant: Osamu Machida

    Inventor: Osamu Machida

    CPC classification number: H03K3/00 H03K5/08

    Abstract: A switch device comprised of a wide band gap semiconductor is provided. The switch device comprises a drain, a source, a gate and a gate voltage clamp circuit, which is connected between a signal terminal, to which a signal for driving the gate is input, and the gate through a series circuit of a capacitor and a resistance, and which comprises a diode and a voltage limiter circuit provided between the drain and the gate.

    Abstract translation: 提供了由宽带隙半导体构成的开关装置。 开关装置包括漏极,源极,栅极和栅极电压钳位电路,其连接在输入用于驱动栅极的信号的信号端和栅极之间,通过电容器的串联电路和 电阻,并且其包括设置在漏极和栅极之间的二极管和限压器电路。

    METHOD OF MAKING LIQUID DISCHARGE HEAD, LIQUID DISCHARGE HEAD, LIQUID DISCHARGE APPARATUS HAVING LIQUID DISCHARGE HEAD, AND MANUFACTURING APPARATUS OF LIQUID DISCHARGE HEAD
    66.
    发明申请
    METHOD OF MAKING LIQUID DISCHARGE HEAD, LIQUID DISCHARGE HEAD, LIQUID DISCHARGE APPARATUS HAVING LIQUID DISCHARGE HEAD, AND MANUFACTURING APPARATUS OF LIQUID DISCHARGE HEAD 有权
    液体排出头,液体排出头,液体排出头液体排出装置的制造方法以及液体排出头的制造装置

    公开(公告)号:US20130169713A1

    公开(公告)日:2013-07-04

    申请号:US13727758

    申请日:2012-12-27

    Abstract: A method of making a liquid discharge head which includes a nozzle to discharge liquid, a pressure chamber communicating with the nozzle, a pressure chamber substrate to form surfaces of the pressure chamber, and a piezoelectric actuator to apply pressure to liquid in the pressure chamber having a lower electrode, a ferroelectric film, and an upper electrode, includes a silicon wafer supplying process, a position adjustment process, a surface treatment process to reform a surface of the lower electrode, a liquid applying process to apply ferroelectric precursor on the lower electrode by an inkjet method, a heating process to heat the ferroelectric precursor film, and a cooling process. A series of processes from the position adjustment process to the cooling process is iterated to form a ferroelectric film having a predetermined thickness. The series of processes is performed with certain waiting times inserted between key processes.

    Abstract translation: 一种制造液体排出头的方法,该排液头包括用于排出液体的喷嘴,与喷嘴连通的压力室,压力室基板以形成压力室的表面;以及压电致动器,用于向压力室中的液体施加压力, 下电极,铁电体膜和上电极,包括硅晶片供给工序,位置调整工序,对下电极的表面进行改质的表面处理工序,在下电极上施加铁电前体的液体施加工序 通过喷墨法,加热铁电前体膜的加热工序和冷却工序。 迭代从位置调整处理到冷却处理的一系列处理,以形成具有预定厚度的铁电体膜。 一系列进程是在密钥进程之间插入某些等待时间的情况下执行的。

    SEMICONDUCTOR DEVICE
    68.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20120217546A1

    公开(公告)日:2012-08-30

    申请号:US13466565

    申请日:2012-05-08

    Abstract: An aspect of the present invention inheres in a semiconductor device includes a semiconductor region, a source electrode and a drain electrode, which are provided on a main surface of the semiconductor region, a gate electrode exhibiting normally-off characteristics, the gate electrode being provided above the main surface of the semiconductor region while interposing a p-type material film therebetween, and being arranged between the source electrode and the drain electrode, and a fourth electrode that is provided on the main surface of the semiconductor region, and is arranged between the gate electrode and the drain electrode.

    Abstract translation: 本发明的一个方面在半导体器件中包括设置在半导体区域的主表面上的半导体区域,源电极和漏电极,具有常关特性的栅电极,栅电极被设置 在半导体区域的主表面之上,同时在其间插入p型材料膜,并且布置在源电极和漏电极之间;以及第四电极,设置在半导体区域的主表面上,并且布置在 栅电极和漏电极。

    GATE DRIVER AND SEMICONDUCTOR DEVICE EMPLOYING THE SAME
    69.
    发明申请
    GATE DRIVER AND SEMICONDUCTOR DEVICE EMPLOYING THE SAME 有权
    门控驱动器和半导体器件使用它们

    公开(公告)号:US20120139589A1

    公开(公告)日:2012-06-07

    申请号:US13306265

    申请日:2011-11-29

    CPC classification number: H03K17/0822 H02M1/32 H02M1/36 H02M3/33507

    Abstract: A gate driver for driving a gate of a switching element Tr7 includes a driving part that drives the switching element according to a control signal and an active clamp circuit to clamp the voltage between the first and second main terminals of the switching element through the driving part. If a voltage applied between a first main terminal (drain) and a second main terminal (source) of the switching element exceeds a predetermined voltage, the active clamp circuit forcibly blocks a driving operation of the driving part from driving the switching element.

    Abstract translation: 用于驱动开关元件Tr7的栅极的栅极驱动器包括驱动部件,其根据控制信号驱动开关元件和有源钳位电路,以通过驱动部分钳位开关元件的第一和第二主端子之间的电压 。 如果施加在开关元件的第一主端子(漏极)和第二主端子(源极)之间的电压超过预定电压,则有源钳位电路强制地阻止驱动部分的驱动操作来驱动开关元件。

    Semiconductor device
    70.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US08188515B2

    公开(公告)日:2012-05-29

    申请号:US12640560

    申请日:2009-12-17

    Abstract: An aspect of the present invention inheres in a semiconductor device includes a semiconductor region, a source electrode and a drain electrode, which are provided on a main surface of the semiconductor region, a gate electrode exhibiting normally-off characteristics, the gate electrode being provided above the main surface of the semiconductor region while interposing a p-type material film therebetween, and being arranged between the source electrode and the drain electrode, and a fourth electrode that is provided on the main surface of the semiconductor region, and is arranged between the gate electrode and the drain electrode.

    Abstract translation: 本发明的一个方面在半导体器件中包括设置在半导体区域的主表面上的半导体区域,源电极和漏电极,具有常关特性的栅电极,栅电极被设置 在半导体区域的主表面之上,同时在其间插入p型材料膜,并且布置在源电极和漏电极之间;以及第四电极,设置在半导体区域的主表面上,并且布置在 栅电极和漏电极。

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