公开(公告)号：US20200235231A1

公开(公告)日：2020-07-23

申请号：US16601609

申请日：2019-10-15

Applicant: University of Electronic Science and Technology of China

Inventor： Zehong LI ,  Xin PENG ,  Yishang ZHAO ,  Min REN ,  Bo ZHANG

IPC: H01L29/739 ,  H01L29/423 ,  H01L29/10

Abstract: The present invention relates to the technical field of power semiconductor devices, particularly to an insulated gate bipolar transistor with a MOS controllable hole path. According to the present invention, a MOS controllable gate structure formed by a gate dielectric layer, a MOS control gate electrode and a P-type MOS channel region are embedded in a P+ floating p-body region of the conventional IGBT structure. The MOS region is equivalent to a switch controlled by a gate voltage. When the device is turned on under a forward voltage, the potential of the p-body region is floated to store holes, reducing the saturation conduction voltage drop of the device. Under the condition of turn-off and short-circuit, the hole extracting path is provided and the Miller capacitance is lowered, thereby lowering the turn-off losses and enhancing the short-circuit withstand capability.

公开(公告)号：US20200220063A1

公开(公告)日：2020-07-09

申请号：US16419007

申请日：2019-05-22

Applicant: University of Electronic Science and Technology of China

Inventor： Jing Jiang ,  Yan Pan ,  Yi Niu ,  Ting Zhou ,  Rui Zhang ,  Xinrui He ,  Chao Wang

IPC: H01L35/16 ,  C01G5/00

Abstract: A low-temperature high-performance thermoelectric material possesses a chemical formula of (AgyCu2−y)1−xTe1−zSez, wherein −0.025≤x≤0.075, 0.6≤y≤1.4, 0

公开(公告)号：US10607987B2

公开(公告)日：2020-03-31

申请号：US16255851

申请日：2019-01-24

Applicant: University of Electronic Science and Technology of China

Inventor： Ming Qiao ,  Song Pu ,  Bo Zhang

IPC: H01L27/06 ,  H01L21/8258 ,  H01L21/784

Abstract: A BIPOLAR-CMOS-DMOS (BCD) semiconductor device and manufacturing method, which can integrate a Junction Field-Effect Transistor (JFET), two classes of Vertical Double-diffusion Metal Oxide Semiconductor (VDMOS), a Lateral Insulated-Gate Bipolar Transistor (LIGBT) and seven kinds of Laterally Diffused Metal Oxide Semiconductor (LDMOS), a low-voltage Negative channel Metal Oxide Semiconductor (NMOS), a low-voltage Positive channel Metal Oxide Semiconductor (PMOS), a low-voltage Negative-Positive-Negative (NPN) transistor and a low-voltage Positive-Negative-Positive (PNP) transistor, and a diode in the same chip. Bipolar devices in the analog circuit, power components in the switch circuit, Complementary Metal Oxide Semiconductor (CMOS) devices in the logic circuit and other kinds of lateral and vertical components are integrated. This present invention saves costs at the same time greatly improve chip integration. The manufacturing method of the present invention is simple, and the difficulty of process is relatively less.

公开(公告)号：US20200052687A1

公开(公告)日：2020-02-13

申请号：US16455803

申请日：2019-06-28

Applicant: University of Electronic Science and Technology of China

Inventor： Xin MING ,  Li HU ,  Xuan ZHANG ,  Su PAN ,  Chunqi ZHANG ,  Yao QIN ,  Zhiwen ZHANG ,  Yangli XIN ,  Zhuo WANG ,  Bo ZHANG

IPC: H03K17/06 ,  H03K17/16

Abstract: A switch bootstrap charging circuit suitable for a gate drive circuit of a GaN power device includes a high-voltage MOSFET, a low-voltage MOSFET, a high-voltage MOSFET control module, and a low-voltage MOSFET control module. The low-voltage MOSFET is a PMOS transistor, and the source of the low-voltage MOSFET is connected to the power supply voltage. The drain of the high-voltage MOSFET serves as an output terminal of the switch bootstrap charging circuit. The low-voltage MOSFET control module and the high-voltage MOSFET control module generate a gate drive signal of the low-voltage MOSFET and a gate drive signal of the high-voltage MOSFET according to the gate drive signal of the lower power transistor.

公开(公告)号：US10553926B2

公开(公告)日：2020-02-04

申请号：US15739169

申请日：2017-07-19

Applicant: University of Electronic Science and Technology of China

Inventor： Yong Xiang ,  Cong Wang ,  Xuesong Feng ,  Fenfen Liu

IPC: H01P7/04 ,  H01P7/10 ,  H01P7/06

Abstract: The present disclosure is related to the microwave measuring field, and in particularly to a coaxial resonant cavity and system and method for measuring the dielectric constant of material. The coaxial resonant cavity includes a coupling mechanism and a cavity body. The coupling mechanism is accommodated in the cavity body for exciting or coupling microwaves inside the cavity body. The coaxial resonant cavity further includes a probe extending out of the cavity body and being coaxial with the cavity body. The cavity body is shaped as an annular column, and a ratio of an outer radius of the annular column to an inner radius of the annular column is (3-5):1. The present disclosure still provides a system and method for measuring the dielectric constant of material using the coaxial resonant cavity.

公开(公告)号：US10550240B2

公开(公告)日：2020-02-04

申请号：US15825109

申请日：2017-11-29

Applicant: University of Electronic Science and Technology of China

Inventor： Huiling Tai ,  Xueliang Ye ,  Zhen Yuan ,  Rui Guo ,  Yadong Jiang ,  Weizhi Li ,  Xiaosong Du

IPC: B29D7/01 ,  C08J5/18 ,  B32B27/12 ,  C08K3/04 ,  C08F2/20 ,  C08F26/10 ,  C08F120/56 ,  B32B27/30 ,  B32B27/28 ,  C08G73/02 ,  G01N21/35 ,  G01Q60/24 ,  H01J37/28

Abstract: A carbon material-polymer strain sensitive film and its preparation method are disclosed. The carbon material-polymer strain sensitive film includes multiple layers of carbon sensitive films and multiple layers of polymer films, wherein the multiple layers of carbon sensitive films and the multiple layers of polymer films form a multi-layer composite film in sequence through a layer-by-layer assembly process. The preparation method includes steps of: cleaning, processing a hydrophilic treatment and processing a hydrophobic treatment on a rigid substrate in sequence; preparing a carbon material in dispersion solution and a polymer dispersion solution; through a layer-by-layer self-assembly process, growing the polymer and the carbon material in a form of layer-by-layer on the rigid substrate; transferring the composite film from the rigid substrate to a flexible substrate; and pasting two electrodes at two ends of the composite film and encapsulating with a flexible film.

公开(公告)号：US20190371937A1

公开(公告)日：2019-12-05

申请号：US15774291

申请日：2016-09-17

Applicant: University of Electronic Science and Technology of China

Inventor： Min REN ,  Yuci LIN ,  Chi XIE ,  Zhiheng SU ,  Zehong LI ,  Jinping ZHANG ,  Wei GAO ,  Bo ZHANG

IPC: H01L29/78 ,  H01L29/423

Abstract: A trench MOS device with improved single event burnout endurance, applied in the field of semiconductor. The device is provided, in an epitaxial layer, with a conductive type semiconductor pillar connected to a source and a second conductive type current-directing region. Whereby. the trajectory of the electron-hole pairs induced by the single event effect is changed and thus avoids the single event burnout caused by the triggering of parasitic transistors, therefore improving the endurance of the single event burnout of the trench MOS device.

公开(公告)号：US20190288475A1

公开(公告)日：2019-09-19

申请号：US16427347

申请日：2019-05-31

Applicant: University of Electronic Science and Technology of China

Inventor： Yunjiang Rao ,  Kang Li ,  Bing Han ,  Yun Fu ,  Zengling Ran

IPC: H01S3/067 ,  H01S3/094 ,  G01H9/00 ,  G01D5/353

Abstract: A long-distance FODAS amplification system includes a distributed amplification unit, which includes a LEAF, a pump, and a WDM; wherein the pump light passes through the WDM into the LEAF, so as to realize distributed amplification. A long-distance FODAS amplification method includes steps of: 1) modulating and amplifying a light source to obtain the probe pulse light; 2) guiding the pump light and the probe pulse light into LEAF; 3) combining the probe pulse light with the pump light to perform distributed amplification, so as to generate power-raised Rayleigh backscattered light; and 4) converting and demodulating the Rayleigh backscattered light after being output through the circulator, so as to complete distributed sensing.

公开(公告)号：US10310546B2

公开(公告)日：2019-06-04

申请号：US15730407

申请日：2017-10-11

Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA

Inventor： Yindong Xiao ,  Guangkun Guo ,  Ke Liu ,  Junwu Zhang ,  Houjun Wang ,  Jianguo Huang ,  Shulin Tian

IPC: G06F1/02 ,  G06F15/78 ,  H03K4/02 ,  G01R31/28 ,  G10H1/12 ,  G06F1/03 ,  G06F13/28

Abstract: The present invention provides an arbitrary waveform generator based on instruction architecture. To deal with the feature that the instructions and waveform data of the AWG are coupled in the prior art, an instruction set based waveform synthesis controller is employed, and substitutes for the sequence wave generator in the present invention, i.e. an arbitrary waveform generator based on instruction architecture. Thus the time-sharing scheduling in reading the waveform synthesis instruction and the segment waveform data is realized, and the complexity of the hardware is reduced, so that the AWG in present invention can synthesize and generate a complex sequence wave rapidly and efficiently.

公开(公告)号：US10253413B2

公开(公告)日：2019-04-09

申请号：US15121045

申请日：2015-04-30

Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA

Inventor： Bowan Tao ,  Jie Xiong ,  Fei Zhang ,  Chaoren Li ,  Xiaohui Zhao ,  Yanrong Li

IPC: C23C16/46 ,  C23C16/56 ,  C23C14/24 ,  C23C14/08 ,  C23C14/54 ,  C23C14/56 ,  C23C16/40 ,  C23C16/54

Abstract: The invention provides a thin film deposition system and a method, and relates to the field of thin film deposition. The deposition method comprises the following steps: 1) heating metal substrate; carrying out deposition. The method is characterized in the step 1) that a current is conducted into the metal substrate at one end of the growth zone by one electrode, and out of the metal substrate at the other end of the growth zone by the other electrode, so that the metal substrate is heated by the heat emitting of the resistant of the metal substrate itself. According to the method, the quality of the prepared thin film is improved, while the preparation cost of the thin film is reduced. In addition, the consistent double-sided thin films can be easily prepared on two surfaces of the metal substrate by employing the system and method.