公开(公告)号：US07292428B2

公开(公告)日：2007-11-06

申请号：US11115951

申请日：2005-04-26

Applicant: Hiroji Hanawa ,  Andrew Nguyen ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Biagio Gallo ,  Amir Al-Bayati

Inventor： Hiroji Hanawa ,  Andrew Nguyen ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Biagio Gallo ,  Amir Al-Bayati

IPC: H02N13/00

CPC classification number: H01L21/68742 ,  H01L21/6831

Abstract: A lift pin assembly for use in a reactor for processing a workpiece includes plural lift pins extending generally parallel with a lift direction, each of the plural lift pins having a top end for supporting a workpiece and a bottom end. A lift table faces the bottom ends of the pins and is translatable in a direction generally parallel with the lift direction. A small force detector senses a force exerted by the lift pins that is sufficiently large to indicate a chucked wafer and sufficiently small to avoid dechucking a wafer. A large force detector senses a force exerted by the lift pins in a range sufficient to de-chuck the wafer.

Abstract translation: 用于处理工件的反应器中的提升销组件包括大体平行于提升方向延伸的多个提升销，多个提升销中的每一个具有用于支撑工件的顶端和底端。 升降台面向销的底端，并可在与升降方向大致平行的方向上平移。 小的力检测器感测由提升销施加的足够大的力以指示夹紧的晶片并且足够小以避免使晶片脱扣。 大的力检测器感测由提升销施加的力在足以脱离晶片的范围内。

公开(公告)号：US20070032082A1

公开(公告)日：2007-02-08

申请号：US11199592

申请日：2005-08-08

Applicant: Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

Inventor： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC: H01L21/302

CPC classification number: H01L21/0332 ,  G03F1/54 ,  G03F1/68 ,  G03F7/202 ,  H01L21/3081 ,  H01L21/3086

Abstract: A method of processing a thin film structure on a semiconductor substrate using an optically writable mask, the method includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be exposed to a light source in accordance with a predetermined pattern, depositing an optically writable carbon-containing mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes optically writing on the carbon-containing mask layer in accordance with the predetermined pattern with writing light of a characteristic suitable for transforming the transparency or opacity of the optically writable mask layer and exposing through the mask layer the target layer with reading light of a characteristic different from that of the writing light.

Abstract translation: 一种使用光学可写掩模在半导体衬底上处理薄膜结构的方法，所述方法包括将衬底放置在反应室中，所述衬底在其表面上具有根据预定的暴露于光源的靶层 （a）将含碳工艺气体引入所述室中，（b）在可折入路径中产生可重入环形的RF等离子体电流，所述折返路径包括位于所述腔内的过程区域 通过将等离子体RF源功率耦合到可折入路径的外部部分，（c）将RF等离子体偏置功率或偏置电压耦合到工件。 该方法还包括根据预定图案，用适合于转换光学可写掩膜层的透明度或不透明度的特性的光进行光学写入，并通过掩模层曝光目标层与读取光 具有与书写光不同的特征。

公开(公告)号：US07109098B1

公开(公告)日：2006-09-19

申请号：US11131904

申请日：2005-05-17

Applicant: Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

Inventor： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC: H01L21/26

CPC classification number: H01L21/268 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/26513 ,  H01L21/3127 ,  H01L21/314 ,  H01L21/3146

Abstract: A method of forming semiconductor junctions in a semiconductor material of a workpiece includes ion implanting dopant impurities in selected regions of the semiconductor material, introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and optically annealing the workpiece so as to activate dopant impurities in the semiconductor material.

Abstract translation: 在工件的半导体材料中形成半导体结的方法包括在半导体材料的选定区域中的离子注入掺杂剂杂质，将光吸收材料前体气体引入到包含工件的腔室中，在折返中产生RF振荡环形等离子体电流 路径，其包括通过施加RF源功率覆盖工件的工艺区域，以便在工件上沉积光吸收材料层，并对工件进行光学退火，以激活半导体材料中的掺杂剂杂质。

公开(公告)号：US07094316B1

公开(公告)日：2006-08-22

申请号：US09638075

申请日：2000-08-11

Applicant: Hiroji Hanawa ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka ,  Yan Ye

Inventor： Hiroji Hanawa ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka ,  Yan Ye

IPC: C23C16/00 ,  C23F1/02

CPC classification number: H01J37/321 ,  H01J37/32082

Abstract: A plasma reactor for processing a workpiece, including an enclosure defining a vacuum chamber, a workpiece support within the enclosure facing an overlying portion of the enclosure, the enclosure having at least first and second openings therethrough near generally opposite sides of the workpiece support. At least one hollow conduit is connected to the first and second openings. A closed torroidal path is provided through the conduit and extending between the first and second openings across the wafer surface. A process gas supply is coupled to the interior of the chamber for supplying process gas to the torroidal path. A coil antenna is coupled to an RF power source and inductively, coupled to the interior of the hollow conduit and capable of maintaining a plasma in the torroidal path.

Abstract translation: 一种用于处理工件的等离子体反应器，包括限定真空室的外壳，位于所述外壳内的工件支撑件面向所述外壳的上部，所述外壳具有穿过所述工件支撑件的大致相对侧的至少第一和第二开口。 至少一个中空管道连接到第一和第二开口。 通过导管提供封闭的环形路径，并且在第一和第二开口之间跨越晶片表面延伸。 工艺气体供应件连接到室的内部，用于将工艺气体供应到环形路径。 线圈天线​​耦合到RF电源并且感应地耦合到中空导管的内部并且能够将等离子体保持在环形路径中。

公开(公告)号：US07037813B2

公开(公告)日：2006-05-02

申请号：US10646612

申请日：2003-08-22

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

IPC: H01L21/04 ,  H01L21/84

CPC classification number: H01J37/32357 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32412 ,  H01L21/2236

Abstract: A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpiece and the ceiling, and introducing into the chamber a process gas including the species to be implanted in the surface layer of the workpiece. The method includes generating from the process gas a plasma by capacitively coupling RF source power across the workpiece support and the ceiling or the sidewall from an RF source power generator. The method further includes applying an RF bias from an RF bias generator to the workpiece support.

Abstract translation: 用于将离子注入工件的表面层的方法包括将工件放置在腔室中的工件支撑件上，其中表面层与腔室的天花板处于面对关系，从而在工件和天花板之间限定加工区域， 并且将包括待植入物种的工艺气体引入到工件的表面层中。 该方法包括通过从RF源功率发生器电容耦合RF源功率跨过工件支撑件和天花板或侧壁来从工艺气体产生等离子体。 该方法还包括将来自RF偏置发生器的RF偏压施加到工件支撑件。

公开(公告)号：US20050268072A1

公开(公告)日：2005-12-01

申请号：US11182141

申请日：2005-07-15

Applicant: Zahid Najam ,  Peder Jungck ,  Andrew Nguyen

Inventor： Zahid Najam ,  Peder Jungck ,  Andrew Nguyen

IPC: G06F9/38 ,  G06F15/78 ,  G06F15/00

CPC classification number: G06F9/3879 ,  G06F15/7864

Abstract: An apparatus and method for interfacing a processor to one or more co-processors interface provides a dual ported memory to be used as a message passing buffer between the processor and the co-processors. Both the processor and co-processors can connect asynchronously to the dual ported memory. Control logic monitors activity by the processor to alert the co-processors of communications by the processor written to the memory and otherwise allows the processor and co-processors to think they are interfacing directly with one another

Abstract translation: 将处理器与一个或多个协处理器接口连接的装置和方法提供了一个双端口存储器，用作处理器和协处理器之间的消息传递缓冲器。 处理器和协处理器都可以异步连接到双端口存储器。 控制逻辑监视处理器的活动以警告协处理器通过写入存储器的处理器通信，否则允许处理器和协处理器认为它们彼此直接接口

公开(公告)号：US20050230047A1

公开(公告)日：2005-10-20

申请号：US11046659

申请日：2005-01-28

Applicant: Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

Inventor： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

IPC: H01J37/32 ,  C23F1/00 ,  H01L21/302

CPC classification number: H01J37/32082 ,  H01J37/321 ,  H01L21/67109 ,  H01L21/6831

Abstract: A plasma reactor for performing plasma immersion ion implantation, dopant deposition or surface material enhancement, includes a vacuum chamber, a wafer support pedestal or electrostatic chuck having an insulated electrode underlying a wafer support surface within said chamber, a chucking voltage source coupled to the insulated electrode, a thermal sink coupled to the electrostatic chuck, an RF bias power generator coupled to said electrostatic chuck, and a process gas supply and gas inlet ports coupled to the chamber and coupled to the gas supply. The process gas supply contains either (a) a gas containing a dopant species to be ion implanted in a semiconductive material of workpiece, (b) a gas containing a dopant species to be deposited on a surface of a semiconductive material of a workpiece, or (c) a gas containing a material enhancement species to be ion implanted into a workpiece.

Abstract translation: 用于执行等离子体浸没离子注入，掺杂剂沉积或表面材料增强的等离子体反应器包括真空室，晶片支撑基座或静电卡盘，其具有位于所述腔室内的晶片支撑表面下方的绝缘电极，耦合到绝缘体的夹持电压源 电极，耦合到静电卡盘的散热器，耦合到所述静电卡盘的RF偏置功率发生器，以及耦合到所述腔室并耦合到气体供应的工艺气体供应和气体入口端口。 工艺气体供应包含（a）含有要离子注入工件半导体材料中的掺杂剂物质的气体，（b）含有待沉积在工件的半导体材料表面上的掺杂物质的气体，或 （c）含有将离子注入到工件中的材料增强物质的气体。

公开(公告)号：US06939434B2

公开(公告)日：2005-09-06

申请号：US10164327

申请日：2002-06-05

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Yan Ye ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Michael S. Barnes ,  Huong Thanh Nguyen

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Yan Ye ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Michael S. Barnes ,  Huong Thanh Nguyen

IPC: H01J37/32 ,  C23C16/00 ,  C23F1/00

CPC classification number: H01J37/321 ,  H01J37/32082 ,  H01J37/32412

Abstract: A plasma reactor is described that includes a vacuum chamber defined by an enclosure including a side wall and a workpiece support pedestal within the chamber defining a processing region overlying said pedestal. The chamber has at least a first pair of ports near opposing sides of said processing region and a first external reentrant tube is connected at respective ends thereof to the pair of ports. The reactor further includes a process gas injection apparatus (such as a gas distribution plate) and an RF power applicator coupled to the reentrant tube for applying plasma source power to process gases within the tube to produce a reentrant torroidal plasma current through the first tube and across said processing region. A magnet controls radial distribution of plasma ion density in the processing region, the magnet having an elongate pole piece defining a pole piece axis intersecting the processing region.

Abstract translation: 描述了一种等离子体反应器，其包括由壳体限定的真空室，所述外壳包括在所述腔室内的侧壁和工件支撑基座，其限定覆盖所述基座的处理区域。 所述腔室具有在所述处理区域的相对侧附近的至少第一对端口，并且第一外部可折入管的相应端部连接到所述一对端口。 反应器还包括工艺气体注入装置（例如气体分配板）和耦合到可折入管的RF功率施加器，其用于施加等离子体源功率以处理管内的气体，以产生通过第一管的可重入环形等离子体电流， 跨越所述处理区域。 磁体控制处理区域中的等离子体离子密度的径向分布，磁体具有限定与加工区域相交的极片轴线的细长极片。

公开(公告)号：US20050191830A1

公开(公告)日：2005-09-01

申请号：US11046661

申请日：2005-01-28

Applicant: Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

Inventor： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

IPC: H01J37/32 ,  H01L21/425

CPC classification number: H01J37/32082 ,  H01J37/321 ,  H01L21/67109 ,  H01L21/6831

Abstract: A method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber, includes placing the workpiece on a workpiece support in the chamber, controlling a temperature of the wafer support near a constant level; performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma while minimizing deposition and minimizing etching by holding the temperature of the workpiece within a temperature range that is above a workpiece deposition threshold temperature and below a workpiece etch threshold temperature.

Abstract translation: 在等离子体反应器室中对工件进行等离子体浸没离子注入的方法包括将工件放置在腔室中的工件支撑件上，将晶片支架的温度控制在恒定水平附近; 通过将注入种类前体气体引入到腔室中并产生等离子体并且通过将工件的温度保持在高于工件沉积阈值温度并低于工件沉积阈值温度的温度范围内来最小化沉积和最小化蚀刻来对工件进行等离子体浸没离子注入 工件蚀刻阈值温度。

公开(公告)号：US20050191827A1

公开(公告)日：2005-09-01

申请号：US11046562

申请日：2005-01-28

Applicant: Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

Inventor： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

IPC: H01J37/32 ,  H01L21/461 ,  H01L21/302

CPC classification number: H01J37/32082 ,  H01J37/321 ,  H01L21/67109 ,  H01L21/6831

Abstract: One method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber includes initially depositing a seasoning film on the interior surfaces of the plasma reactor chamber before the workpiece is introduced, by introducing a seasoning film precursor gas into the chamber and generating a plasma within the chamber, performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma, and then removing the workpiece from the chamber and removing the seasoning film from the chamber interior surfaces.

Abstract translation: 在等离子体反应器室中的工件上进行等离子体浸没离子注入的一种方法包括：在工件被引入之前，首先在等离子体反应器室的内表面上沉积调味膜，通过将调味膜前体气体引入室中， 在室内的等离子体，通过将注入种类前体气体引入到腔室中并产生等离子体，然后从腔室中移出工件并从室内表面除去调味膜，从而在工件上进行等离子体浸没离子注入。