公开(公告)号：US10761354B2

公开(公告)日：2020-09-01

申请号：US16153861

申请日：2018-10-08

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Isao Suzumura ,  Hajime Watakabe

IPC: G02F1/1333 ,  G02F1/1368 ,  G02F1/1335 ,  G02F1/1362 ,  H01L27/12 ,  G09F9/30 ,  H05K1/18 ,  G02F1/1339 ,  H01L27/32 ,  H01L51/00

Abstract: The purpose of the invention is to realize the flexible display device of high reliability; specifically in a structure that a bending area is in a terminal area, and in that disconnection of the wiring does not occur in the bending area. The concrete structure is that: a display device having a display area, a driving circuit area and a bending area comprising: a first thin film transistor and a first interlayer insulating film are formed in the display area, a second thin film transistor and a second interlayer insulating film are formed in the driving circuit area, terminal wirings to connects the display area and the driving circuit area are formed in the bending area.

公开(公告)号：US10727254B2

公开(公告)日：2020-07-28

申请号：US16447000

申请日：2019-06-20

Applicant: Japan Display Inc.

Inventor： Toshinari Sasaki ,  Hajime Watakabe ,  Akihiro Hanada ,  Marina Shiokawa

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/423 ,  H01L29/49

Abstract: A semiconductor device includes a oxide semiconductor layer, a gate electrode arranged above the oxide semiconductor layer, a gate insulation layer between the oxide semiconductor layer and the gate electrode, a first insulation layer arranged above the oxide semiconductor layer and arranged with a first aperture part, wiring including an aluminum layer arranged above the first insulation layer, the wiring being electrically connected to the oxide semiconductor layer via the first aperture part, a barrier layer including aluminum oxide above the first insulation layer, above the wiring and covering a side surface of the wiring, and an organic insulation layer arranged above the barrier layer.

公开(公告)号：US10439010B2

公开(公告)日：2019-10-08

申请号：US15686781

申请日：2017-08-25

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada

IPC: H01L27/32 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/3225 ,  G09G3/36 ,  H01L27/12 ,  H01L29/786

Abstract: The purpose of the present invention is to form both LTPS TFT and semiconductor TFT in a same substrate. The feature of the display device to realize the above purpose is that: a display device having a display area containing a pixel comprising: the pixel includes a first TFT having an oxide semiconductor, a gate insulating film is formed on the oxide semiconductor, a first gate electrode is formed on the gate insulating film, a first source/drain electrode formed by a metal or an alloy contacts a source or a drain of the semiconductor the first gate electrode and the first source/drain electrode are formed by the same material.

公开(公告)号：US10373982B2

公开(公告)日：2019-08-06

申请号：US15619677

申请日：2017-06-12

Applicant: Japan Display Inc.

Inventor： Toshinari Sasaki ,  Hajime Watakabe ,  Akihiro Hanada ,  Marina Shiokawa

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/423 ,  H01L29/49

Abstract: A semiconductor device includes a oxide semiconductor layer, a gate electrode arranged above the oxide semiconductor layer, a gate insulation layer between the oxide semiconductor layer and the gate electrode, a first insulation layer arranged above the oxide semiconductor layer and arranged with a first aperture part, wiring including an aluminum layer arranged above the first insulation layer, the wiring being electrically connected to the oxide semiconductor layer via the first aperture part, a barrier layer including aluminum oxide above the first insulation layer, above the wiring and covering a side surface of the wiring, and an organic insulation layer arranged above the barrier layer.

公开(公告)号：US10317763B2

公开(公告)日：2019-06-11

申请号：US15723300

申请日：2017-10-03

Applicant: Japan Display Inc.

Inventor： Hajime Watakabe ,  Isao Suzumura ,  Hirokazu Watanabe ,  Akihiro Hanada

IPC: H01L29/10 ,  H01L29/12 ,  G02F1/1368 ,  H01L21/8234 ,  H01L21/473 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768 ,  H01L29/786 ,  H01L27/12 ,  H01L51/50

Abstract: A display device comprising: a first TFT using silicon (Si) and a second TFT using oxide semiconductor are formed on a substrate, a distance between the silicon (Si) and the substrate is smaller than a distance between the oxide semiconductor and the substrate, a source/drain electrode of the first TFT connects with the silicon (Si) via a first through hole, a source/drain electrode of the second TFT connects with the oxide semiconductor via a second through hole, metal films are made on the oxide semiconductor sandwiching a channel of the oxide semiconductor in a plan view, the channel has a channel width, an AlO layer is formed on the metal films and the oxide semiconductor, the second source/drain electrode and the metal films are connected via the second through hole formed in the AlO layer.

公开(公告)号：US20170365624A1

公开(公告)日：2017-12-21

申请号：US15619677

申请日：2017-06-12

Applicant: Japan Display Inc.

Inventor： Toshinari Sasaki ,  Hajime Watakabe ,  Akihiro Hanada ,  Marina Shiokawa

IPC: H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/7869

Abstract: A semiconductor device includes a oxide semiconductor layer, a gate electrode arranged above the oxide semiconductor layer, a gate insulation layer between the oxide semiconductor layer and the gate electrode, a first insulation layer arranged above the oxide semiconductor layer and arranged with a first aperture part, wiring including an aluminum layer arranged above the first insulation layer, the wiring being electrically connected to the oxide semiconductor layer via the first aperture part, a barrier layer including aluminum oxide above the first insulation layer, above the wiring and covering a side surface of the wiring, and an organic insulation layer arranged above the barrier layer.