MICROELECTROMECHANICAL SYSTEM DEVICES HAVING THROUGH SUBSTRATE VIAS AND METHODS FOR THE FABRICATION THEREOF
    61.
    发明申请
    MICROELECTROMECHANICAL SYSTEM DEVICES HAVING THROUGH SUBSTRATE VIAS AND METHODS FOR THE FABRICATION THEREOF 有权
    具有基板VIAS的微电子仪器系统及其制造方法

    公开(公告)号:US20150225229A1

    公开(公告)日:2015-08-13

    申请号:US14694908

    申请日:2015-04-23

    Applicant: Lianjun Liu

    Inventor: Lianjun Liu

    CPC classification number: B81B7/0006 B81B7/007 B81B2207/096 B81C1/00301

    Abstract: Methods for the fabrication of a Microelectromechanical Systems (“MEMS”) devices are provided, as are MEMS devices. In one embodiment, the MEMS device fabrication method includes forming at least one via opening extending into a substrate wafer, depositing a body of electrically-conductive material over the substrate wafer and into the via opening to produce a via, bonding the substrate wafer to a transducer wafer having an electrically-conductive transducer layer, and forming an electrical connection between the via and the electrically-conductive transducer layer. The substrate wafer is thinned to reveal the via through a bottom surface of the substrate wafer, and a backside conductor is produced over a bottom surface of the substrate wafer electrically coupled to the via.

    Abstract translation: 提供了用于制造微机电系统(“MEMS”)器件的方法,MEMS器件也是如此。 在一个实施例中,MEMS器件制造方法包括形成延伸到衬底晶片中的至少一个通孔开口,在衬底晶片上沉积导电材料体并进入通孔开口以产生通孔,将衬底晶片接合到 换能器晶片具有导电换能器层,并且在通孔和导电换能器层之间形成电连接。 衬底晶片被薄化以通过衬底晶片的底表面露出通孔,并且在衬底晶片的底表面上产生电气耦合到通孔的背面导体。

    MEMS pressure sensor and manufacturing method therefor
    62.
    发明授权
    MEMS pressure sensor and manufacturing method therefor 有权
    MEMS压力传感器及其制造方法

    公开(公告)号:US09073745B2

    公开(公告)日:2015-07-07

    申请号:US14004816

    申请日:2012-02-23

    Applicant: Lianjun Liu

    Inventor: Lianjun Liu

    Abstract: A Micro Electromechanical System (MEMS) pressure sensor may include a first substrate provided with a sensitive diaphragm of a capacitive pressure sensing unit, an electrical connecting layer and a first bonding layer on a surface of the first substrate; and a second substrate provided with an inter-conductor dielectric layer, a conductor connecting layer in the inter-conductor dielectric layer and/or a second bonding layer on a surface of the second substrate. The second substrate is arranged opposite to the first substrate, and the second substrate is fixedly coupled to the first substrate via the first bonding layer and the second bonding layer; a pattern of the first bonding layer is corresponding to a pattern of the second bonding layer, and both the first bonding layer and the second bonding layer are formed of a conductive material.

    Abstract translation: 微机电系统(MEMS)压力传感器可以包括设置有电容式压力感测单元的敏感隔膜的第一基板,电连接层和在第一基板的表面上的第一接合层; 以及设置有导体间介电层的第二基板,导体间电介质层中的导体连接层和/或第二基板的表面上的第二接合层。 第二基板与第一基板相对设置,第二基板经由第一接合层和第二接合层固定地耦合到第一基板; 第一接合层的图案对应于第二接合层的图案,并且第一接合层和第二接合层都由导电材料形成。

    Vent hole sealing in multiple die sensor device
    63.
    发明授权
    Vent hole sealing in multiple die sensor device 有权
    排气孔密封在多个模具传感器装置中

    公开(公告)号:US09018029B1

    公开(公告)日:2015-04-28

    申请号:US14099502

    申请日:2013-12-06

    Abstract: Embodiments of methods of fabricating a sensor device include attaching first and second die to one another to define first and second cavities in which first and second sensors of the sensor device are disposed, respectively. The second die has an opening in communication with the second cavity. The methods further include obstructing the opening, attaching a third die to the second die. The first cavity is hermetically sealed by attaching the first and second die. The second cavity is hermetically sealed by attaching the third die to the second die.

    Abstract translation: 制造传感器装置的方法的实施例包括将第一和第二管芯彼此附接以限定其中分别设置有传感器装置的第一和第二传感器的第一和第二腔。 第二模具具有与第二腔体连通的开口。 所述方法还包括阻挡开口,将第三模具附接到第二模具。 通过连接第一和第二模具将第一腔密封。 通过将第三模具附接到第二模具而使第二腔体气密地密封。

    MICROELECTROMECHANICAL SYSTEM DEVICES HAVING CRACK RESISTANT MEMBRANE STRUCTURES AND METHODS FOR THE FABRICATION THEREOF
    64.
    发明申请
    MICROELECTROMECHANICAL SYSTEM DEVICES HAVING CRACK RESISTANT MEMBRANE STRUCTURES AND METHODS FOR THE FABRICATION THEREOF 有权
    具有抗裂膜结构的微电子系统装置及其制造方法

    公开(公告)号:US20150059484A1

    公开(公告)日:2015-03-05

    申请号:US14537498

    申请日:2014-11-10

    CPC classification number: B81B3/007 B81B2201/0264 B81B2203/0127 G01L9/0072

    Abstract: Methods for fabricating crack resistant Microelectromechanical (MEMS) devices are provided, as are MEMS devices produced pursuant to such methods. In one embodiment, the method includes forming a sacrificial body over a substrate, producing a multi-layer membrane structure on the substrate, and removing at least a portion of the sacrificial body to form an inner cavity within the multi-layer membrane structure. The multi-layer membrane structure is produced by first forming a base membrane layer over and around the sacrificial body such that the base membrane layer has a non-planar upper surface. A predetermined thickness of the base membrane layer is then removed to impart the base membrane layer with a planar upper surface. A cap membrane layer is formed over the planar upper surface of the base membrane layer. The cap membrane layer is composed of a material having a substantially parallel grain orientation.

    Abstract translation: 提供了制造抗电微机电(MEMS)器件的方法,以及根据这些方法制造的MEMS器件。 在一个实施例中,该方法包括在衬底上形成牺牲体,在衬底上产生多层膜结构,以及去除牺牲体的至少一部分以在多层膜结构内形成内腔。 多层膜结构通过首先在牺牲体上方和周围形成基膜层使得基膜层具有非平面的上表面来制造。 然后去除预定厚度的基膜层,以使基膜层具有平坦的上表面。 在基膜层的平面上表面上形成盖膜层。 盖膜层由具有基本上平行的晶粒取向的材料构成。

    Apparatus and method for reset and stabilization control of a magnetic sensor
    65.
    发明授权
    Apparatus and method for reset and stabilization control of a magnetic sensor 有权
    磁传感器复位稳定控制装置及方法

    公开(公告)号:US08922205B2

    公开(公告)日:2014-12-30

    申请号:US13286026

    申请日:2011-10-31

    CPC classification number: G01R33/0029 G01R33/0041 G01R33/04 G01R33/098

    Abstract: A magnitude and direction of at least one of a reset current and a second stabilization current (that produces a reset field and a second stabilization field, respectively) is determined that, when applied to an array of magnetic sense elements, minimizes the total required stabilization field and reset field during the operation of the magnetic sensor and the measurement of the external field. Therefore, the low field sensor operates optimally (with the highest sensitivity and the lowest power consumption) around the fixed external field operating point. The fixed external field is created by other components in the sensor device housing (such as speaker magnets) which have a high but static field with respect to the low (earth's) magnetic field that describes orientation information.

    Abstract translation: 确定复位电流和第二稳定电流(分别产生复位场和第二稳定场)中的至少一个的幅度和方向,当应用于磁感测元件的阵列时,使总要求的稳定性最小化 在磁传感器运行期间的场和复位场以及外场测量。 因此,低场传感器在固定的外场操作点周围最佳地运行(具有最高的灵敏度和最低的功耗)。 固定的外部场是由传感器装置外壳(例如扬声器磁体)中的其他部件产生的,这些部件相对于描述取向信息的低(地球)磁场具有高但静止的场。

    Microelectromechanical system devices having through substrate vias and methods for the fabrication thereof
    66.
    发明授权
    Microelectromechanical system devices having through substrate vias and methods for the fabrication thereof 有权
    具有通过衬底通孔的微机电系统器件及其制造方法

    公开(公告)号:US08883535B2

    公开(公告)日:2014-11-11

    申请号:US13781391

    申请日:2013-02-28

    Applicant: Lianjun Liu

    Inventor: Lianjun Liu

    CPC classification number: B81C1/00793 B81B3/0075 B81B7/007 B81B2207/096

    Abstract: Methods for the fabrication of a Microelectromechanical Systems (“MEMS”) device are provided. In one embodiment, the MEMS device fabrication method includes forming a via opening extending through a sacrificial layer and into a substrate over which the sacrificial layer has been formed. A body of electrically-conductive material is deposited over the sacrificial layer and into the via opening to produce an unpatterned transducer layer and a filled via in ohmic contact with the unpatterned transducer layer. The unpatterned transducer layer is then patterned to define, at least in part, a primary transducer structure. At least a portion of the sacrificial layer is removed to release at least one movable component of the primary transducer structure. A backside conductor, such as a bond pad, is then produced over a bottom surface of the substrate and electrically coupled to the filled via.

    Abstract translation: 提供了用于制造微机电系统(“MEMS”)装置的方法。 在一个实施例中,MEMS器件制造方法包括形成延伸穿过牺牲层的通孔,并且形成已在其上形成牺牲层的衬底。 导电材料体沉积在牺牲层上并进入通孔开口,以产生未图案化的换能器层和与未图案化的换能器层欧姆接触的填充通孔。 然后将未图案化的换能器层图案化以至少部分地限定主换能器结构。 去除牺牲层的至少一部分以释放主换能器结构的至少一个可移动部件。 然后在衬底的底表面上产生背面导体,例如接合焊盘,并电耦合到填充的通孔。

    MEMS MICROPHONE AND FORMING METHOD THEREFOR
    67.
    发明申请
    MEMS MICROPHONE AND FORMING METHOD THEREFOR 有权
    MEMS麦克风及其形成方法

    公开(公告)号:US20140003633A1

    公开(公告)日:2014-01-02

    申请号:US14004822

    申请日:2012-02-22

    Applicant: Lianjun Liu

    Inventor: Lianjun Liu

    Abstract: A micro-electro-mechanical system (MEMS) microphone and a forming method therefore. The MEMS microphone comprises: a first substrate, the first substrate is provided with a first bonding face, the first substrate comprises an MEMS microphone component and a first conductive bonding structure arranged on the first bonding face, a second substrate, the second substrate is provided with a second bonding face, the second bonding substrate comprises a circuit and a second conductive bonding structure arranged on the second bonding face; the first substrate and the second substrate are oppositely fitted together via the first conductive bonding structure and the second conductive bonding structure. Embodiments of the present invention have a simple packaging technique and a compact size; the MEMS microphone packaging structure formed has a great performance on signal-to-noise ratio, and a great anti-interference capability

    Abstract translation: 因此,微机电系统(MEMS)麦克风和成形方法。 MEMS麦克风包括:第一基板,第一基板设置有第一接合面,第一基板包括MEMS麦克风部件和布置在第一接合面上的第一导电接合结构,第二基板,第二基板 具有第二接合面,所述第二接合基板包括布置在所述第二接合面上的电路和第二导电接合结构; 第一基板和第二基板经由第一导电接合结构和第二导电接合结构相对地配合在一起。 本发明的实施例具有简单的包装技术和紧凑的尺寸; 形成的MEMS麦克风封装结构具有很好的信噪比性能,抗干扰能力强

    MEMS INERTIAL SENSOR AND FORMING METHOD THEREFOR
    68.
    发明申请
    MEMS INERTIAL SENSOR AND FORMING METHOD THEREFOR 有权
    MEMS惯性传感器及其形成方法

    公开(公告)号:US20130340526A1

    公开(公告)日:2013-12-26

    申请号:US14004838

    申请日:2012-02-23

    Applicant: Lianjun Liu

    Inventor: Lianjun Liu

    Abstract: A MEMS inertial sensor, may include a movable sensitive element; and second substrate and a third substrate. The movable sensitive element may be formed by using a first substrate which may be formed of a monocrystalline semiconductor material. The first substrate may include a first surface and a second surface which are opposite to each other. One or more conductive layers may be formed on the first surface of the first substrate The second substrate may be coupled to a surface of the one or more conductive layer on the first substrate. The third substrate may be coupled to the second surface of the first substrate. The third substrate and the second substrate are respectively arranged on two opposite sides of the movable sensitive element.

    Abstract translation: MEMS惯性传感器可以包括可移动敏感元件; 第二基板和第三基板。 可移动敏感元件可以通过使用可以由单晶半导体材料形成的第一衬底来形成。 第一基板可以包括彼此相对的第一表面和第二表面。 一个或多个导电层可以形成在第一衬底的第一表面上。第二衬底可以耦合到第一衬底上的一个或多个导电层的表面。 第三衬底可以耦合到第一衬底的第二表面。 第三基板和第二基板分别布置在可移动敏感元件的两个相对侧上。

    Method of fabricating a semiconductor device that limits damage to elements of the semiconductor device that are exposed during processing
    69.
    发明授权
    Method of fabricating a semiconductor device that limits damage to elements of the semiconductor device that are exposed during processing 有权
    制造半导体器件的方法,其限制在处理期间暴露的半导体器件的元件的损坏

    公开(公告)号:US08551814B2

    公开(公告)日:2013-10-08

    申请号:US12722225

    申请日:2010-03-11

    Abstract: A wafer structure (88) includes a device wafer (20) and a cap wafer (60). Semiconductor dies (22) on the device wafer (20) each include a microelectronic device (26) and terminal elements (28, 30). Barriers (36, 52) are positioned in inactive regions (32, 50) of the device wafer (20). The cap wafer (60) is coupled to the device wafer (20) and covers the semiconductor dies (22). Portions (72) of the cap wafer (60) are removed to expose the terminal elements (28, 30). The barriers (36, 52) may be taller than the elements (28, 30) and function to prevent the portions (72) from contacting the terminal elements (28, 30) when the portions (72) are removed. The wafer structure (88) is singulated to form multiple semiconductor devices (89), each device (89) including the microelectronic device (26) covered by a section of the cap wafer (60) and terminal elements (28, 30) exposed from the cap wafer (60).

    Abstract translation: 晶片结构(88)包括器件晶片(20)和盖晶片(60)。 器件晶片(20)上的半导体管芯(22)各自包括微电子器件(26)和端子元件(28,30)。 阻挡层(36,52)位于器件晶片(20)的非活性区域(32,50)中。 盖晶片(60)耦合到器件晶片(20)并覆盖半导体管芯(22)。 去除盖晶片(60)的部分(72)以露出端子元件(28,30)。 障碍物(36,52)可以比元件(28,30)更高,并且用于在部分(72)被移除时防止部分(72)接触端子元件(28,30)。 晶片结构(88)被单个化以形成多个半导体器件(89),每个器件(89)包括由盖晶片(60)的一部分覆盖的微电子器件(26)和从其暴露的端子元件(28,30) 盖晶片(60)。

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