Abstract:
A semiconductor device with its package size close to its chip size has a stress absorbing layer, allows a patterned flexible substrate to be omitted, and allows a plurality of components to be fabricated simultaneously. There is: a step of forming electrodes (12) on a wafer (10); a step of providing a resin later (14) as a stress relieving layer on the wafer (10), avoiding the electrodes (12); a step of forming a chromium layer (16) as wiring from electrodes (12) over the resin layer (14); and step of forming solder balls as external electrodes on the chromium layer (16) over the resin layer (14); and a step of cutting the wafer (10) into individual semiconductor chips; in the steps of forming the chromium layer (16) and solder balls, metal thin film fabrication technology is used during the wafer process.
Abstract:
An electronic component includes: a first substrate; a second substrate; a sealing member surrounding a sealing space formed between the first substrate and the second substrate; and a functional element at least a part of which is disposed in the sealing space. In the electronic component, the sealing member includes a core part formed on the first substrate and having elasticity and a metal film formed on a surface of the core part, and the metal film is bonded to the second substrate.
Abstract:
A semiconductor device including: a semiconductor chip; a plurality of electrodes formed on the semiconductor chip and arranged along one side of the semiconductor chip; a resin protrusion formed on the semiconductor chip and extending in a direction which intersects the side; and a plurality of electrical connection sections formed on the resin protrusion and electrically connected to the respective electrodes.
Abstract:
An electronic board includes a substrate on which is formed an electronic circuit having a connection terminal; a stress-relaxation layer formed on the substrate; a rearrangement wiring for the connection terminal disposed at a top side of the stress-relaxation layer; and a capacitor. The capacitor has a first electrode that is disposed between the substrate and the stress-relaxation layer, a second electrode that is disposed at the top side of the stress-relaxation layer, and a dielectric material that is disposed between the first electrode and the second electrode. The first electrode and/or the second electrode has a corrugated surface facing the dielectric material.
Abstract:
A semiconductor device comprising: a semiconductor element having a plurality of electrodes; a passivation film formed on the semiconductor element in a region avoiding at least a part of each of the electrodes; a conductive foil provided at a given spacing from the surface on which the passivation film is formed; an external electrodes formed on the conductive foil; intermediate layer formed between the passivation film and the conductive foil to support the conductive foil; and wires electrically connecting the electrodes to the conductive foil; wherein a depression tapered in a direction from the conductive foil to the passivation film if formed under a part of the conductive foil that includes the connection with the external electrodes.
Abstract:
An electronic device includes: a substrate on which an interconnect pattern is formed; a chip component having a first surface on which an electrode is formed and a second surface opposite to the first surface, the chip component being mounted in such a manner that the second surface faces the substrate; an insulating section formed of a resin and provided adjacent to the chip component; and an interconnect which is formed to extend from above the electrode, over the insulating section and to above the interconnect pattern.
Abstract:
An electronic component includes: a first substrate; a second substrate; a sealing member surrounding a sealing space formed between the first substrate and the second substrate; and a functional element at least a part of which is disposed in the sealing space. In the electronic component, the sealing member includes a core part formed on the first substrate and having elasticity and a metal film formed on a surface of the core part, and the metal film is bonded to the second substrate.
Abstract:
A manufacturing method for electronic device, includes: preparing a first substrate having a plurality of first regions; preparing a second substrate having a plurality of second regions; facing the first region and the second region each other, and connecting the first substrate and the second substrate while disposing at least a part of a functional element within a space between the first region and the second region; obtaining a plurality of first divisional substrates by cutting the first substrate at each of the first regions, after the connecting of the first substrate and the second substrate; forming a sealing film covering the plurality of the first divisional substrates on the second substrate, after cutting the first substrate; obtaining a plurality of second divisional substrates by cutting the second substrate at each of the second regions, after forming the sealing film; and obtaining a plurality of individual electronic devices.
Abstract:
An electronic device includes a plurality of components, nanoparticles to bond the components, and a receiving layer for holding the nanoparticles, the receiving layer being disposed on at least one of the bonded components. The electronic device may further include an electrode disposed on at least one of the plurality of components. The receiving layer is disposed on the surface of the electrode. Conductive particles etc. are mixed in the receiving layer.
Abstract:
An external terminal is formed on an interconnect pattern formed on a substrate by using a soldering material. Subsequently, a chip component having an electrode is mounted on the substrate. An interconnect for electrically connecting the electrode and the interconnect pattern is formed at a temperature lower than a melting point of the soldering material.