公开(公告)号：US20220359586A1

公开(公告)日：2022-11-10

申请号：US17714071

申请日：2022-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinyoung Kim ,  Taehun Lee ,  Jihee Yang

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor substrate having first and second opposing surfaces thereon and a photoelectric conversion region of first conductivity type therein, which extends between the first and second surfaces. A two-dimensional array of semiconductor photoelectric conversion devices of second conductivity type is provided within the photoelectric conversion region. A first grid-shaped isolation region is provided, which extends into the photoelectric conversion region from the first surface, and has a first electrically conductive material therein. A second grid-shaped isolation region is provided, which extends into the photoelectric conversion region from the second surface. An electrically conductive contact region is provided, which (i) extends on the second surface and into a portion of the photoelectric conversion region that is outside the two-dimensional array of semiconductor photoelectric conversion devices, and (ii) electrically contacts a portion of the first electrically conductive material within the first grid-shaped isolation region.

公开(公告)号：US20220180957A1

公开(公告)日：2022-06-09

申请号：US17368460

申请日：2021-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younghwi Yang ,  Ilhan Park ,  Jinyoung Kim ,  Sehwan Park ,  Dongmin Shin

IPC: G11C29/42 ,  G11C29/44 ,  G11C29/12 ,  G11C7/10 ,  H03K19/21

Abstract: A controller includes control pins, a buffer memory, an error correction circuit, and a processor driving a read level search unit for a read operation of at least one non-volatile memory device, in which the read level search unit receives fail bit information of a sector error-corrected in the first page from the at least one non-volatile memory device when the error correction of the first read data is not possible, and searches for an optimal read level or set a soft decision offset using the fail bit information.

公开(公告)号：US11183526B2

公开(公告)日：2021-11-23

申请号：US16701750

申请日：2019-12-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In Ho Ro ,  Doowon Kwon ,  Seokjin Kwon ,  Jameyung Kim ,  Jinyoung Kim ,  Sungki Min ,  Kwansik Cho ,  Mangeun Cho ,  Ho-Chul Ji

IPC: H01L21/00 ,  H01L27/146

Abstract: An image sensor including a semiconductor substrate having a first surface and a second surface, and a pixel region having a photoelectric conversion region; a first conductive pattern in a first trench defining the pixel region and extending from the first surface toward the second surface; a second conductive pattern in a second trench shallower than the first trench and defined between a plurality of active patterns on the first surface of the pixel region; a transfer transistor and a plurality of logic transistors on the active patterns; and a conductive line on the second surface and electrically connected to the first conductive pattern.

公开(公告)号：US11132312B2

公开(公告)日：2021-09-28

申请号：US16835922

申请日：2020-03-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinyoung Kim ,  Jaeduk Yu

IPC: G11C11/56 ,  G06F13/16 ,  G06F11/07 ,  G01R31/28 ,  G11C7/20

Abstract: To control initialization of a nonvolatile memory device, before assembling a memory system including a first nonvolatile memory device and a second nonvolatile memory device, information data for initialization of the first nonvolatile memory device are stored in the first nonvolatile memory device. After assembling the memory system, the information data are moved from the first nonvolatile memory device to the second nonvolatile memory device. The first nonvolatile memory device is initialized based on the information data stored in the second nonvolatile memory device. An initialization time of the first nonvolatile memory device is reduced efficiently by moving the information data from the first nonvolatile memory device to the second nonvolatile memory device having the rapid speed of the reading operation and using the information data read from the second nonvolatile memory device.