-
公开(公告)号:US20240274400A1
公开(公告)日:2024-08-15
申请号:US18643379
申请日:2024-04-23
Applicant: ASML Netherlands B.V.
Inventor: Marcus Adrianus VAN DE KERKHOF , Jing ZHANG , Martijn Petrus Christianus VAN HEUMEN , Patriek Adrianus Alphonsus Maria BRUURS , Erheng WANG , Vineet SHARMA , Makfir SEFA , Shao-Wei FU , Simone Maria SCOLARI , Johannes Andreas Henricus Maria JACOBS
CPC classification number: H01J37/20 , F16L11/04 , F16L11/12 , B01D19/0068 , H01J2237/2001 , H01L21/67288
Abstract: Apparatuses, systems, and methods for transferring fluid to a stage in a charged particle beam system are disclosed. In some embodiments, a stage may be configured to secure a wafer; a chamber may be configured to house the stage; and a tube may be provided within the chamber to transfer fluid between the stage and outside of the chamber. The tube may include a first tubular layer of first material, wherein the first material is a flexible polymer; and a second tubular layer of second material, wherein the second material is configured to reduce permeation of fluid or gas through the tube. In some embodiments, a system may include a degasser system outside of the chamber, where the degasser system may be configured to remove gases from the transfer fluid before the transfer fluid enters the tube.
-
62.
公开(公告)号:US20240264533A1
公开(公告)日:2024-08-08
申请号:US18635589
申请日:2024-04-15
Applicant: ASML NETHERLANDS B.V.
Inventor: Raymond Wilhelmus Louis LAFARRE , Sjoerd Nicolaas Lambertus DONDERS , Nicolaas TEN KATE , Nina Vladimirovna DZIOMKINA , Yogesh Pramod KARADE , Elisabeth Corinne RODENBURG
IPC: G03F7/00 , B05D3/06 , B05D5/00 , B22F7/06 , B22F10/00 , B22F10/20 , B22F10/25 , B22F10/28 , B22F10/66 , B23K26/342 , B23K26/354 , B23Q3/18 , B33Y10/00 , B33Y80/00 , G03F7/20
CPC classification number: G03F7/70341 , B05D3/06 , B05D5/00 , B22F7/062 , B22F10/00 , B22F10/20 , B23K26/342 , B23K26/354 , B23Q3/18 , B33Y10/00 , B33Y80/00 , G03F7/20 , G03F7/70416 , G03F7/707 , G03F7/70708 , G03F7/70716 , G03F7/70733 , G03F7/708 , B22F10/25 , B22F10/28 , B22F10/66
Abstract: A substrate holder for a lithographic apparatus has a main body having a thin-film stack provided on a surface thereof. The thin-film stack forms an electronic or electric component such as an electrode, a sensor, a heater, a transistor or a logic device, and has a top isolation layer. A plurality of burls to support a substrate are formed on the thin-film stack or in apertures of the thin-film stack.
-
公开(公告)号:US20240264081A1
公开(公告)日:2024-08-08
申请号:US18640249
申请日:2024-04-19
Applicant: ASML Netherlands B.V.
Inventor: Jeroen COTTAAR
CPC classification number: G01N21/4738 , G01N21/9501
Abstract: Disclosed is a method for performing a measurement of an exposed pattern in photoresist on a substrate and an associated metrology device. The method comprises imparting a beam of measurement radiation on said exposed pattern over a measurement area of a size which prevents or mitigates photoresist damage from the measurement radiation; capturing scattered radiation comprising said measurement radiation subsequent to it having been scattered from said exposed pattern and detecting the scattered radiation on at least one detector. A value for a parameter of interest is determined from the scattered radiation.
-
公开(公告)号:US12055478B2
公开(公告)日:2024-08-06
申请号:US17563867
申请日:2021-12-28
Applicant: ASML NETHERLANDS B.V.
Inventor: Andrey Nikipelov , Saeedeh Farokhipoor , Maarten Van Kampen
CPC classification number: G01N21/15 , G01N21/8806 , G01N21/9501 , G02B1/18 , G02B5/0891
Abstract: A method and apparatus for cleaning vacuum ultraviolet (VUV) optics (e.g., one or more mirrors of a VUV) of a substrate inspection system is disclosed. The cleaning system ionizes or disassociates hydrogen gas in a VUV optics environment to generate hydrogen radicals (e.g., H*) or ions (e.g., H+, H2+, H3+, which remove water or hydrocarbons from the surface of the one or more mirrors. The one or more VUV mirrors may include a reflective material, such as aluminum. The one or more VUV mirrors may have a protective coating to protect the reflective material from any detrimental reaction to the hydrogen radicals or ions. The protective coating may include a noble metal.
-
公开(公告)号:US12050409B2
公开(公告)日:2024-07-30
申请号:US18116218
申请日:2023-03-01
Applicant: ASML NETHERLANDS B.V.
CPC classification number: G03F9/7026 , G02B3/00 , G02B7/023 , G02B7/026 , G02B27/30 , G03F7/7015 , G03F7/70625 , G03F7/7065 , G01N21/9501 , G01N2201/0633 , G02B2003/0093 , G03F7/70566
Abstract: An assembly for collimating broadband radiation, the assembly including: a convex refractive singlet lens having a first spherical surface for coupling the broadband radiation into the lens and a second spherical surface for coupling the broadband radiation out of the lens, wherein the first and second spherical surfaces have a common center; and a mount for holding the convex refractive singlet lens at a plurality of contact points having a centroid coinciding with the common center.
-
公开(公告)号:US12044981B2
公开(公告)日:2024-07-23
申请号:US17381817
申请日:2021-07-21
Applicant: ASML NETHERLANDS B.V.
Inventor: Marc Hauptmann , Everhardus Cornelis Mos , Weitian Kou , Alexander Ypma , Michiel Kupers , Hyunwoo Yu , Min-Sub Han
CPC classification number: G03F7/70633 , G03F7/70525 , G03F7/7085 , G03F9/7003
Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.
-
公开(公告)号:US20240231247A1
公开(公告)日:2024-07-11
申请号:US18413910
申请日:2024-01-16
Applicant: ASML Netherlands B.V.
Inventor: Arjan Johannes Anton BEUKMAN , Omar EL GAWHARY , Ilse VAN WEPEREN , Pieter Joseph Marie WÖLTGENS
IPC: G03F9/00
CPC classification number: G03F9/7088 , G03F9/7046
Abstract: Disclosed is a method for measuring alignment on an alignment mark, and associated apparatuses. The method comprises illuminating the alignment mark with illumination comprising at least one wavelength; capturing the scattered radiation scattered from the alignment mark as a result of said illumination step, and determining at least one position value for said alignment mark from an angularly resolved representation of said scattered radiation, wherein said alignment mark, or a feature thereof, is smaller than said at least one wavelength in at least one dimension of a substrate plane.
-
公开(公告)号:US12032299B2
公开(公告)日:2024-07-09
申请号:US17784566
申请日:2020-12-03
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
Inventor: Patricius Aloysius Jacobus Tinnemans , Igor Matheus Petronella Aarts , Kaustuve Bhattacharyya , Ralph Brinkhof , Leendert Jan Karssemeijer , Stefan Carolus Jacobus Antonius Keij , Haico Victor Kok , Simon Gijsbert Josephus Mathijssen , Henricus Johannes Lambertus Megens , Samee Ur Rehman
CPC classification number: G03F7/70633 , G03F7/706837 , G03F9/7034 , G03F9/7092
Abstract: A metrology method relating to measurement of a structure on a substrate, the structure being subject to one or more asymmetric deviation. The method includes obtaining at least one intensity asymmetry value relating to the one or more asymmetric deviations, wherein the at least one intensity asymmetry value includes a metric related to a difference or imbalance between the respective intensities or amplitudes of at least two diffraction orders of radiation diffracted by the structure; determining at least one phase offset value corresponding to the one or more asymmetric deviations based on the at least one intensity asymmetry value; and determining one or more measurement corrections for the one or more asymmetric deviations from the at least one phase offset value.
-
公开(公告)号:US12032297B2
公开(公告)日:2024-07-09
申请号:US17291513
申请日:2019-10-15
Applicant: ASML NETHERLANDS B.V.
Inventor: Emil Peter Schmitt-Weaver , Kaustuve Bhattacharyya , Martin Kers
CPC classification number: G03F7/705 , G05B13/042
Abstract: A method of determining a parameter of a lithographic apparatus, wherein the method includes providing first height variation data of a first substrate, providing first performance data of a first substrate, and determining a model based on the first height variation data and the first performance data. The method further includes obtaining second height variation data of a second substrate, inputting the second height variation data to the model, and determining second performance data of the second substrate by running the model. Based on the second performance data, the method determines a parameter of the apparatus.
-
公开(公告)号:US12028000B2
公开(公告)日:2024-07-02
申请号:US18132617
申请日:2023-04-10
Applicant: ASML Netherlands B.V.
Inventor: Jan-Gerard Cornelis Van Der Toorn , Jeroen Gertruda Antonius Huinck , Han Willem Hendrik Severt , Allard Eelco Kooiker , Michael Johannes Christiaan Ronde , Arno Maria Wellink , Shibing Liu , Ying Luo , Yixiang Wang , Chia-Yao Chen , Bohang Zhu , Jurgen Van Soest
CPC classification number: H02N13/00 , G03F7/70708 , G03F7/70716
Abstract: Disclosed is an object table for holding an object, comprising: an electrostatic clamp arranged to clamp the object on the object table; a neutralizer arranged to neutralize a residual charge of the electrostatic clamp; a control unit arranged to control the neutralizer, wherein the residual charge is an electrostatic charge present on the electrostatic clamp when no voltage is applied to the electrostatic clamp.
-
-
-
-
-
-
-
-
-