Abstract:
A multi-electron source has a plurality of electron emitting portions arranged on a substrate. Each electron emitting portion comprises a conductive film containing a crack with an average width of 0.05 .mu.m to 1 .mu.m. The electron emitting portions are prepared by subjecting conductive films, preferably of fine particles, to a pulse voltage application treatment.
Abstract:
An electron-beam generator includes an electron-emitting device and a modulating electrode capable of modulating an electron beam emitted from the electron-emitting device in response to an information signal. The modulating electrode and the electron-emitting device are laminated so as to interpose an insulating substrate therebetween.
Abstract:
A field emission device includes a cathode, an anode, an emitter, a first adjusting electrode, and a second adjusting electrode. The emitter electrically connects to the cathode. The cathode, the first adjusting electrode, and the second adjusting electrode electrically connect to an electrode down-lead. The anode electrically connects another electrode down-lead. The cathode is disposed between the first adjusting electrode and the second adjusting electrode.
Abstract:
A manufacturing method of an electron-emitting device according to the present invention includes the steps of: preparing a substrate having a first electrode and a second electrode, and a conductive film for connecting the first electrode and the second electrode; and forming a gap on the conductive film by applying a voltage between the first electrode and the second electrode; wherein a planar shape of the conductive film has a V-shape portion between the first electrode and the second electrode.
Abstract:
An image display apparatus according to the present invention comprises a plurality of electron emitting devices having an electron emitting portion provided between a cathode electrode and a gate electrode; a cathode wiring connected to the cathode electrode; and a gate wiring connected to the gate electrode and having a resistance higher than the resistance of the cathode wiring, wherein an impedance element having a resistance value of Ry and an electrostatic capacitance of Cy is connected to between the cathode wiring and the cathode electrode, a resistive element having a resistance value of Rx is connected to between the gate wiring and the gate electrode, and |Ry/(1+jωRyCy)| Rx are satisfied, where ω is 100 MHz.
Abstract translation:根据本发明的图像显示装置包括多个电子发射器件,其具有设置在阴极电极和栅电极之间的电子发射部分; 连接到阴极电极的阴极布线; 以及栅极布线,其与栅电极连接并且具有比阴极布线的电阻高的电阻,其中在阴极布线和阴极之间连接具有电阻值Ry的阻抗元件和Cy的静电电容, 电阻值为Rx的电阻元件连接到栅极布线和栅电极之间,并且满足| Ry /(1 +jωRyCy)| Rx,其中ω为100MHz。
Abstract:
An electron beam apparatus of which the electron emission efficiency is high and in which capacitance between a gate and a cathode is small is provided. In the electron beam apparatus which is equipped with the gate and the cathode respectively formed on the side surface of an insulating member and an anode arranged on an elongation of a Z direction, the gate and the cathode are shifted from each other in a Y direction and then arranged so that orthogonal projection of the gate to the anode and orthogonal projection of the cathode to the anode do not overlap each other.
Abstract:
An electron emission apparatus can effectively suppress the adverse effect of electric discharges that can take place between the oppositely disposed electrodes of the apparatus to which a high voltage is applied by dividing the electrode adapted to have a higher electric potential into segments in order to reduce the electrostatic capacitance between the electrodes. In the case of an electron emission apparatus comprising electron-emitting devices, said plurality of electron-emitting devices are disposed such that the direction along which those that can be driven simultaneously are arranged is not parallel with the direction along which the electrode is divided into the electrode segments in order to reduce the variable range of the electric current that can flow in the segments.
Abstract:
Row-directional wires, column-directional wires having a resistance higher than that of the row-directional wires, and electron-emitting devices are disposed on a substrate. The electron-emitting devices and the column-directional wires are each connected via a resistor element. The resistor element is provided with a local fuse portion that is easier to fuse than the other portion. The fuse portion is provided closer to the row-directional wire than to the column-directional wire.
Abstract:
An image formation apparatus comprising a rear plate on which a plurality of wires for connecting electron emission devices are placed; a faceplate arranged in parallel to the rear plate in a frame, on which an image formation material for forming images by radiation of electrons emitted from the electron emission devices is placed; spacers placed between the rear plate and the faceplate and placed on the wires of the rear plate; and getters provided on the wires on which a spacer is not placed but not provided on the wires on which the spacer is placed.
Abstract:
A three-dimensional structure forming a space in which a wiring-side portion of a device electrode is located is arranged on a rear plate. A surface potential of the three-dimensional structure is defined so that an electric field intensity of the space becomes weaker than an average electric field intensity expressed below, average electric field intensity=Va/d, where Va is application voltage of an anode electrode, and d is an interval between a rear plate and the face plate. The device electrode includes a high-temperature portion where temperature locally rises when current flows through the device electrode. The high-temperature portion is positioned in the space or at a distance of less than or equal to 20 μm from the space.
Abstract translation:形成其中装置电极的布线侧部分所在的空间的三维结构布置在后板上。 定义三维结构的表面电位,使得空间的电场强度比以下表示的平均电场强度弱,平均电场强度= Va / d,其中Va是阳极电极的施加电压, d是后板与面板之间的间隔。 器件电极包括当电流流过器件电极时温度局部上升的高温部分。 高温部分位于与该空间小于或等于20μm的空间或距离处。