公开(公告)号：US20120038712A1

公开(公告)日：2012-02-16

申请号：US13265192

申请日：2010-05-27

Applicant: Yoshikazu Akiyama ,  Takakazu Kihira ,  Keiji Ueda ,  Akira Shimofuku ,  Osamu Machida

Inventor： Yoshikazu Akiyama ,  Takakazu Kihira ,  Keiji Ueda ,  Akira Shimofuku ,  Osamu Machida

IPC: B41J2/04 ,  H02K15/00

CPC classification number: H01L41/0973 ,  H01L41/318

Abstract: A method of producing an electromechanical transducer includes a first step of partially modifying a surface of a first electrode; a second step of applying a sol-gel liquid including a metal composite oxide to a predetermined area of the partially-modified surface of the first electrode; a third step of performing drying, thermal decomposition, and crystallization on the applied sol-gel liquid to form an electromechanical transduction film; a fourth step of repeating the first, second, and third steps to obtain the electromechanical transduction film with a desired thickness; and a fifth step of forming a second electrode on the electromechanical transduction film.

Abstract translation: 一种制造机电换能器的方法包括：第一步骤，部分地改变第一电极的表面; 将包含金属复合氧化物的溶胶 - 凝胶液施加到第一电极的部分改性表面的预定区域的第二步骤; 在所施加的溶胶 - 凝胶液上进行干燥，热分解和结晶以形成机电转换膜的第三步骤; 重复第一，第二和第三步骤以获得具有所需厚度的机电转换膜的第四步骤; 以及在机电转换膜上形成第二电极的第五步骤。

公开(公告)号：US20120028075A1

公开(公告)日：2012-02-02

申请号：US13179711

申请日：2011-07-11

Applicant: Masahiro YAGI ,  Eiichi Ohta ,  Yoshikazu Akiyama ,  Ryoh Tashiro ,  Osamu Machida

Inventor： Masahiro YAGI ,  Eiichi Ohta ,  Yoshikazu Akiyama ,  Ryoh Tashiro ,  Osamu Machida

IPC: C23C16/52 ,  B32B9/00

CPC classification number: H01L41/317 ,  C23C18/1216 ,  C23C18/14 ,  G01N21/8422 ,  G01N2021/8427

Abstract: A thin film manufacturing method includes placing a substrate in a raw material solution with which a thin film is formed on a first principal plane of the substrate; forming the thin film on the first principal plane of the substrate by applying light to a first principal plane side from a light source; measuring a distance from the first principal plane of the substrate to a liquid surface of the raw material solution by applying light from the light source; and adjusting a position of the substrate in a height direction on the basis of a measurement result obtained at the measuring.

Abstract translation: 薄膜制造方法包括将基板放置在基板的第一主面上形成有薄膜的原料溶液中; 通过将光从光源施加到第一主平面侧，在所述基板的所述第一主平面上形成所述薄膜; 通过施加来自所述光源的光来测量从所述基板的所述第一主平面到所述原料溶液的液面的距离; 并且基于在测量中获得的测量结果来调整基板在高度方向上的位置。

公开(公告)号：US20110254056A1

公开(公告)日：2011-10-20

申请号：US13084777

申请日：2011-04-12

Applicant: Osamu MACHIDA ,  Akio IWABUCHI

Inventor： Osamu MACHIDA ,  Akio IWABUCHI

IPC: H01L29/778

CPC classification number: H01L29/7787 ,  H01L27/0605 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/872

Abstract: A semiconductor device having a transistor and a rectifier includes: a current path; a first main electrode having a rectifying function and arranged on one end of the current path; a second main electrode arranged on the other end of the current path; an auxiliary electrode arranged in a region of the current path between the first main electrode and the second main electrode; a third main electrode arranged on the one end of the current path apart from the first main electrode along a direction intersecting the current path; and a control electrode arranged in a region of the current path between the second main electrode and the third main electrode. The transistor includes the current path, the second main electrode, the third main electrode, and the control electrode. The rectifier includes the current path, the first main electrode, the second main electrode, and the auxiliary electrode.

Abstract translation: 具有晶体管和整流器的半导体器件包括：电流路径; 具有整流功能的第一主电极，设置在电流通路的一端; 布置在电流路径的另一端的第二主电极; 辅助电极，布置在第一主电极和第二主电极之间的电流通路的区域中; 第三主电极，沿着与电流通路相交的方向配置在与第一主电极分离的电流通路一端; 以及布置在第二主电极和第三主电极之间的电流路径区域中的控制电极。 晶体管包括电流路径，第二主电极，第三主电极和控制电极。 整流器包括电流路径，第一主电极，第二主电极和辅助电极。

公开(公告)号：US20110233758A1

公开(公告)日：2011-09-29

申请号：US13033251

申请日：2011-02-23

Applicant: Osamu MACHIDA ,  Michiyoshi Izawa

Inventor： Osamu MACHIDA ,  Michiyoshi Izawa

IPC: H01L23/34 ,  H01L23/48

CPC classification number: H01L29/7813 ,  H01L23/49513 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0605 ,  H01L27/085 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7786 ,  H01L29/872 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/06505 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/48844 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0781 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01013 ,  H01L2924/01026 ,  H01L2224/48824 ,  H01L2224/48744

Abstract: A semiconductor devices includes a first die pad having the conductivity connected to one end of a DC power source, a second die pad having the conductivity connected to the other end of the DC power source, a first switching element provided on the first die pad, receiving DC power from the DC power source via the first die pad, and having a terminal opposite to the first die pad connected to a first output terminal, and a second switching element provided on the second die pad, receiving the DC power from the DC power source via the second die pad, and connected to the first output terminal, and having a terminal opposite to the second die pad.

Abstract translation: 半导体器件包括具有连接到DC电源的一端的导电性的第一管芯焊盘，具有连接到DC电源的另一端的导电性的第二管芯焊盘，设置在第一管芯焊盘上的第一开关元件， 从直流电源经由第一管芯焊盘接收直流电力，并且具有与连接到第一输出端子的第一管芯焊盘相对的端子和设置在第二管芯焊盘上的第二开关元件，从DC接收直流电力 电源，并且连接到第一输出端子，并且具有与第二管芯焊盘相对的端子。

公开(公告)号：US07714360B2

公开(公告)日：2010-05-11

申请号：US11961620

申请日：2007-12-20

Applicant: Koji Otsuka ,  Osamu Machida ,  Hitoshi Murofushi

Inventor： Koji Otsuka ,  Osamu Machida ,  Hitoshi Murofushi

IPC: H01L21/338 ,  H01L29/778 ,  H01L29/812

CPC classification number: H01L29/7787 ,  H01L23/293 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/405 ,  H01L29/475 ,  H01L29/78 ,  H01L29/8611 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

Abstract: A high electron mobility transistor is disclosed which has a main semiconductor region formed on a silicon substrate. The main semiconductor region is a lamination of a buffer layer on the substrate, an electron transit layer on the buffer layer, and an electron supply layer on the electron transit layer. A source, drain, and gate overlie the electron supply layer. Also formed on the electron supply layer is a surface-stabilizing organic semiconductor overlay which is of p conductivity type in contrast to the n type of the electron supply layer.

Abstract translation: 公开了一种高电子迁移率晶体管，其具有形成在硅衬底上的主要半导体区域。 主半导体区域是衬底上的缓冲层，缓冲层上的电子传输层和电子迁移层上的电子供给层的叠层。 源极，漏极和栅极覆盖电子供应层。 还形成在电子供应层上的是与n型电子供应层相反的p导电类型的表面稳定性有机半导体覆盖层。

公开(公告)号：US07648734B2

公开(公告)日：2010-01-19

申请号：US11237906

申请日：2005-09-29

Applicant: Osamu Machida ,  Makoto Kurosawa ,  Kazuo Shimizu

Inventor： Osamu Machida ,  Makoto Kurosawa ,  Kazuo Shimizu

IPC: B05D1/00 ,  B05B13/02

CPC classification number: B41J3/28 ,  B05B13/0431 ,  B05D1/02 ,  B05D2252/10 ,  B41J3/407 ,  B41J11/0085

Abstract: To coat a solution on both surfaces continuously in such a state that an edge portion of the substrate is so constructed as to be fixed, and the substrate is attached to a substrate fixing frame having a positioning mechanism.

Abstract translation: 在两个表面上连续地涂布溶液，使得基板的边缘部分被构造成固定，并且将基板安装到具有定位机构的基板固​​定框架上。

公开(公告)号：US20090159925A1

公开(公告)日：2009-06-25

申请号：US12336106

申请日：2008-12-16

Applicant: Osamu Machida

Inventor： Osamu Machida

IPC: H01L29/739

CPC classification number: H01L29/7787 ,  H01L27/0605 ,  H01L27/0629 ,  H01L29/2003 ,  H01L29/7783 ,  H01L29/872

Abstract: A main semiconductor region grown on a substrate has formed on its surface a pair of main electrodes spaced from each other, a gate electrode between the main electrodes, and a pair of diode-forming electrodes spaced farther away from the gate electrode than are the main electrodes. Making ohmic contact with the main semiconductor region, the pair of main electrodes serve both as drain or source of a HEMT switch and as cathodes of a pair of Schottky diodes integrated with the HEMT switch. Both gate electrode and diode-forming electrodes are in Schottky contact with the main semiconductor region.

Abstract translation: 生长在基板上的主半导体区域在其表面上形成彼此间隔开的一对主电极，主电极之间的栅电极和远离栅极电极的一对二极管形成电极比主电极 电极。 与主半导体区域欧姆接触，该对主电极既用作HEMT开关的漏极或源极，也用作与HEMT开关集成的一对肖特基二极管的阴极。 栅电极和二极管形成电极都与主半导体区域肖特基接触。

公开(公告)号：US20080191216A1

公开(公告)日：2008-08-14

申请号：US12015067

申请日：2008-01-16

Applicant: Osamu Machida ,  Akio Iwabuchi

Inventor： Osamu Machida ,  Akio Iwabuchi

IPC: H01L27/06

CPC classification number: H01L27/0605 ,  H01L25/18 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/7786 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/30107 ,  H03K17/567 ,  H03K17/74 ,  H01L2924/00

Abstract: A silicon-made low-forward-voltage Schottky barrier diode is serially combined with a high-antivoltage-strength high-electron-mobility transistor made from a nitride semiconductor that is wider in bandgap than silicon. The Schottky barrier diode has its anode connected to the gate, and its cathode to the source, of the HEMT. This HEMT is normally on. The reverse voltage withstanding capability of the complete device depends upon that between the drain and gate of the HEMT.

Abstract translation: 硅制造的低电压肖特基势垒二极管与由氮化物半导体制成的高抗电压强度的高电子迁移率晶体管串联组合，氮化物半导体的带隙比硅更宽。 肖特基势垒二极管的阳极连接到HEMT的栅极，其阴极连接到源极。 这个HEMT通常是打开的。 整个器件的反向耐压能力取决于HEMT的漏极和栅极之间的电压。

公开(公告)号：US20080121876A1

公开(公告)日：2008-05-29

申请号：US11961620

申请日：2007-12-20

Applicant: Koji Otsuka ,  Osamu Machida ,  Hitoshi Murofushi

Inventor： Koji Otsuka ,  Osamu Machida ,  Hitoshi Murofushi

IPC: H01L51/05

CPC classification number: H01L29/7787 ,  H01L23/293 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/405 ,  H01L29/475 ,  H01L29/78 ,  H01L29/8611 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

Abstract: A high electron mobility transistor is disclosed which has a main semiconductor region formed on a silicon substrate. The main semiconductor region is a lamination of a buffer layer on the substrate, an electron transit layer on the buffer layer, and an electron supply layer on the electron transit layer. A source, drain, and gate overlie the electron supply layer. Also formed on the electron supply layer is a surface-stabilizing organic semiconductor overlay which is of p conductivity type in contrast to the n type of the electron supply layer.

Abstract translation: 公开了一种高电子迁移率晶体管，其具有形成在硅衬底上的主要半导体区域。 主半导体区域是衬底上的缓冲层，缓冲层上的电子传输层和电子迁移层上的电子供给层的叠层。 源极，漏极和栅极覆盖电子供应层。 还形成在电子供应层上的是与n型电子供应层相反的p导电类型的表面稳定性有机半导体覆盖层。

公开(公告)号：US5966153A

公开(公告)日：1999-10-12

申请号：US771912

申请日：1996-12-23

Applicant: Masao Mitani ,  Kenji Yamada ,  Katsunori Kawasumi ,  Osamu Machida ,  Kazuo Shimizu

Inventor： Masao Mitani ,  Kenji Yamada ,  Katsunori Kawasumi ,  Osamu Machida ,  Kazuo Shimizu

IPC: B41J2/05 ,  B41J2/14 ,  B41J2/16

CPC classification number: B41J2/1635 ,  B41J2/14129 ,  B41J2/1603 ,  B41J2/1626 ,  B41J2/1631 ,  B41J2/1646 ,  B41J2202/03

Abstract: An ink jet printing device including an ink channel wall defining an ink chamber; a nozzle portion formed with a nozzle connecting the ink chamber with atmosphere; and a thermal heater formed to the ink channel wall adjacent to the nozzle portion, the thermal heater including a Ta--Si--O ternary alloy thin film resistor having a composition of 64% .ltoreq.Ta.ltoreq.85%, 5%.ltoreq.Si.ltoreq.26%, and 6%.ltoreq.O.ltoreq.15% and a nickel film conductor.

Abstract translation: 一种喷墨打印装置，包括限定油墨室的油墨通道壁; 形成有将墨水室与大气连接的喷嘴的喷嘴部; 以及形成在与喷嘴部分相邻的墨水通道壁上的热加热器，该热加热器包括具有64％Ta％85％组成的Ta-Si-O三元合金薄膜电阻，5％ / =Si≤26％，6％≤0.15％和镍膜导体。