公开(公告)号：US20060202261A1

公开(公告)日：2006-09-14

申请号：US11324540

申请日：2006-01-03

Applicant: Hang-Ting Lue ,  Tzu Yu Wang

Inventor： Hang-Ting Lue ,  Tzu Yu Wang

IPC: H01L29/792

CPC classification number: H01L27/11568 ,  G11C16/0475 ,  G11C16/0483 ,  G11C16/0491 ,  H01L27/115 ,  H01L29/66833 ,  H01L29/792

Abstract: Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having a small hole-tunneling-barrier height; a charge storage layer disposed above the tunnel dielectric structure; an insulating layer disposed above the charge storage layer; and a gate electrode disposed above the insulating layer are described along with arrays thereof and methods of operation.

Abstract translation: 存储单元包括：半导体衬底，其具有设置在衬底的表面下方并由沟道区分隔开的源极区和漏极区; 隧道电介质结构，其设置在所述沟道区上方，所述隧道介电结构包括至少一层具有小的空穴隧道势垒高度的层; 设置在隧道介电结构上方的电荷存储层; 设置在电荷存储层上方的绝缘层; 并且描述设置在绝缘层上方的栅极电极及其阵列和操作方法。

公开(公告)号：US20060002444A1

公开(公告)日：2006-01-05

申请号：US11066793

申请日：2005-02-25

Applicant: Tzu-Yu Wang ,  Jin Kim

Inventor： Tzu-Yu Wang ,  Jin Kim

IPC: H01S5/00

CPC classification number: H01S5/18327 ,  H01S5/024 ,  H01S5/0422 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/2063 ,  H01S2301/166

Abstract: A vertical cavity surface emitting laser (VCSEL) includes independently definable current and optical confinement structures that provide unique forms of drive current and transverse mode confinement, respectively. The optical guide may be formed from an upper distributed Bragg reflector (DBR), as an etched mesa structure and/or as an intracavity optical guide. The current guide may include an ion-implanted region within the upper DBR. A dielectric structure is formed over the upper DBR and surrounds the optical guide.

公开(公告)号：US20050243881A1

公开(公告)日：2005-11-03

申请号：US11026397

申请日：2004-12-30

Applicant: Hoki Kwon ,  Tzu-Yu Wang ,  Jae-Hyun Ryou ,  Jin Kim ,  Gyoungwon Park

Inventor： Hoki Kwon ,  Tzu-Yu Wang ,  Jae-Hyun Ryou ,  Jin Kim ,  Gyoungwon Park

IPC: H01S5/00 ,  H01S5/183 ,  H01S5/343

CPC classification number: B82Y20/00 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/34306 ,  H01S5/3434 ,  H01S2301/166 ,  H01S2304/04

Abstract: A current confinement layer of a VCSEL is formed by adjusting flow rates of In-, Al-, and As-containing precursors introduced within a deposition chamber. By maintaining a low ratio between the flow rate of the As-containing precursors and the total flow rate of In- and Al-containing precursors (e.g., less than 25, 10, 5, or 1), a current confinement layer, lattice matched to InP and having an enhanced oxidation rate, may be formed.

Abstract translation: 通过调节在沉积室内引入的含In，Al和As的前体的流速来形成VCSEL的电流限制层。 通过保持含砷前体的流速与含In和Al的前体的总流速（例如，小于25,10,5或1）之间的低比例，电流限制层，晶格匹配 至InP并具有增强的氧化速率。

公开(公告)号：US20050139797A1

公开(公告)日：2005-06-30

申请号：US10915868

申请日：2004-08-09

Applicant: Tzu-Yu Wang ,  Eugen Cabuz

Inventor： Tzu-Yu Wang ,  Eugen Cabuz

IPC: G01L7/08 ,  G01L9/00 ,  F16K31/02

CPC classification number: G01L9/0072

Abstract: A valve for regulating the flow of fluids (gas or liquid) using two flexible diaphragms in which an additional element is added to promote rolling contact between the diaphragms. The valve operates in a normally open configuration where fluid flows into the valve, passed through holes or openings in two electrostatically operative diaphragms and out of the valve. The holes or openings in one diaphragm are offset from the holes or openings in the other diaphragm, so that upon electro-static actuation, the diaphragms will seal together, closing the valve.

Abstract translation: 用于使用两个柔性隔膜调节流体（气体或液体）的流量的阀，其中添加附加元件以促进膜片之间的滚动接触。 阀门处于常开状态，其中流体流入阀门，通过两个静电操作隔膜中的孔或开口，并从阀门出来。 一个隔膜中的孔或开口偏离另一个隔膜中的孔或开口，因此在静电致动时，隔膜将密封在一起，关闭阀门。

公开(公告)号：US06901807B1

公开(公告)日：2005-06-07

申请号：US10915869

申请日：2004-08-09

Applicant: Tzu-Yu Wang ,  Eugen I Cabuz

Inventor： Tzu-Yu Wang ,  Eugen I Cabuz

IPC: G01L7/08 ,  G01L9/00 ,  G01L9/12

CPC classification number: G01L9/0072

Abstract: A device for sensing pressure using two perforated rigid films in which a diaphragm is mounted between the first two films. The device senses positive and negative pressure through a port or opening to the region for which pressure data is desired. The device communicates capacitive pressure and changes in that pressure. The flexible diaphragm is spaced from the first and second films such that the flexible diaphragm is adapted to flex toward the first film when pressure increases in the opening and is adapted to flex toward the second film when pressure decreases in the opening to change the capacitance between the diaphragm and at least one of the first and second films. Spacers are used to position all three elements.

Abstract translation: 用于使用两个穿孔刚性膜感测压力的装置，其中隔膜安装在前两个膜之间。 该装置通过端口感测到正压和负压，或者打开到期望压力数据的区域。 该装置传达电容压力和该压力的变化。 柔性隔膜与第一和第二膜间隔开，使得当压力在开口中增加时，柔性隔膜适于朝向第一膜弯曲，并且当开口中的压力降低以改变开口中的电容时适于朝向第二膜弯曲以改变第二膜之间的电容 隔膜和第一和第二膜中的至少一个。 所有三个元素都使用间隔器。

公开(公告)号：US20050047474A1

公开(公告)日：2005-03-03

申请号：US10933876

申请日：2004-09-03

Applicant: Ralph Johnson ,  Tzu-Yu Wang

Inventor： Ralph Johnson ,  Tzu-Yu Wang

IPC: H01S3/08 ,  H01S5/00 ,  H01S5/042 ,  H01S5/183 ,  H01S5/20

CPC classification number: H01S5/18313 ,  H01S5/0425 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/2063

Abstract: The invention is generally concerned with vertical cavity surface emitting lasers. In one example, the vertical cavity surface emitting laser includes, among other things, an upper mirror structure having a metal contact, a top mirror above the metal contact, and a semiconductive top DBR having an insulation region, wherein the top DBR is no more than 3.5 microns thick and is disposed below the metal contact. Thus, the top DBR is sufficiently thick as to enable adequate current spreading, but thin enough to enable fabrication of an isolation region using relatively low energy ion implantation or relatively shallow etching.

Abstract translation: 本发明通常涉及垂直腔表面发射激光器。 在一个示例中，垂直腔表面发射激光器包括具有金属接触件的上反射镜结构，金属接触件上方的顶镜和具有绝缘区域的半导体顶部DBR，其中顶部DBR不再 超过3.5微米厚，并设置在金属接触件的下方。 因此，顶部DBR足够厚以使得能够进行足够的电流扩展，但是足够薄以使得能够使用相对低能量的离子注入或相对浅的蚀刻来制造隔离区域。