公开(公告)号：US20050243890A1

公开(公告)日：2005-11-03

申请号：US11026161

申请日：2004-12-30

Applicant: Jin Kim ,  Tzu-Yu Wang ,  Gyoungwon Park

Inventor： Jin Kim ,  Tzu-Yu Wang ,  Gyoungwon Park

IPC: H01S3/08 ,  H01S5/02 ,  H01S5/024 ,  H01S5/042 ,  H01S5/183 ,  H01S5/343

CPC classification number: B82Y20/00 ,  H01S5/0207 ,  H01S5/024 ,  H01S5/18308 ,  H01S5/18375 ,  H01S5/18377 ,  H01S5/3095 ,  H01S5/34306

Abstract: A VCSEL includes a substrate having a partially removed portion; a metal-assisted DBR having a metal layer and a first mirror stack, wherein the metal layer is located at the partially removed portion of the substrate; an active region having a plurality of quantum wells over the metal-assisted DBR; and a second mirror stack over the active region, wherein a number of alternating layers of the first mirror stack is substantially smaller than a number typically required for a VCSEL without the integrated metal reflector. Such a metal-assisted DBR is especially useful for a long-wavelength VCSEL on a InP substrate or a red-color VCSEL on a GaAs substrate.

Abstract translation: VCSEL包括具有部分去除部分的基板; 具有金属层和第一反射镜叠层的金属辅助DBR，其中所述金属层位于所述基板的部分去除部分; 在金属辅助DBR上具有多个量子阱的有源区; 以及在所述有源区域上的第二反射镜堆叠，其中所述第一反射镜叠层的多个交替层比不具有所述集成金属反射器的VCSEL通常需要的数量小得多。 这种金属辅助DBR对于InP衬底上的长波长VCSEL或GaAs衬底上的红色VCSEL特别有用。

公开(公告)号：US20050243886A1

公开(公告)日：2005-11-03

申请号：US11007081

申请日：2004-12-08

Applicant: Tzu-Yu Wang ,  Jin Kim ,  Hoki Kwon ,  Gyoungwon Park ,  Jae-Hyun Ryou

Inventor： Tzu-Yu Wang ,  Jin Kim ,  Hoki Kwon ,  Gyoungwon Park ,  Jae-Hyun Ryou

IPC: H01S3/08 ,  H01S5/187

CPC classification number: H01S5/18377 ,  H01S5/18341 ,  H01S5/18375

Abstract: A vertical cavity surface emitting laser (VCSEL) structure includes a bottom distributed Bragg reflector (DBR) arranged over a substrate; a metal layer interposed between the bottom DBR and the substrate, wherein the metal layer and bottom DBR form a composite mirror structure. A patterned dielectric layer may be interposed between the metal layer and the bottom DBR to reduce a deleterious chemical reaction between the metal layer and the bottom DBR. The metal layer directly contacts a portion of the bottom DBR to enhance the electrical and thermal conductivity of the

Abstract translation: 垂直腔表面发射激光器（VCSEL）结构包括布置在衬底上的底部分布布拉格反射器（DBR）; 插入在底部DBR和基板之间的金属层，其中金属层和底部DBR形成复合反射镜结构。 可以在金属层和底部DBR之间插入图案化的介电层，以减少金属层和底部DBR之间的有害的化学反应。 金属层直接接触底部DBR的一部分，以增强电气和导热性

公开(公告)号：US20060002444A1

公开(公告)日：2006-01-05

申请号：US11066793

申请日：2005-02-25

Applicant: Tzu-Yu Wang ,  Jin Kim

Inventor： Tzu-Yu Wang ,  Jin Kim

IPC: H01S5/00

CPC classification number: H01S5/18327 ,  H01S5/024 ,  H01S5/0422 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/2063 ,  H01S2301/166

Abstract: A vertical cavity surface emitting laser (VCSEL) includes independently definable current and optical confinement structures that provide unique forms of drive current and transverse mode confinement, respectively. The optical guide may be formed from an upper distributed Bragg reflector (DBR), as an etched mesa structure and/or as an intracavity optical guide. The current guide may include an ion-implanted region within the upper DBR. A dielectric structure is formed over the upper DBR and surrounds the optical guide.

公开(公告)号：US20050243881A1

公开(公告)日：2005-11-03

申请号：US11026397

申请日：2004-12-30

Applicant: Hoki Kwon ,  Tzu-Yu Wang ,  Jae-Hyun Ryou ,  Jin Kim ,  Gyoungwon Park

Inventor： Hoki Kwon ,  Tzu-Yu Wang ,  Jae-Hyun Ryou ,  Jin Kim ,  Gyoungwon Park

IPC: H01S5/00 ,  H01S5/183 ,  H01S5/343

CPC classification number: B82Y20/00 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/34306 ,  H01S5/3434 ,  H01S2301/166 ,  H01S2304/04

Abstract: A current confinement layer of a VCSEL is formed by adjusting flow rates of In-, Al-, and As-containing precursors introduced within a deposition chamber. By maintaining a low ratio between the flow rate of the As-containing precursors and the total flow rate of In- and Al-containing precursors (e.g., less than 25, 10, 5, or 1), a current confinement layer, lattice matched to InP and having an enhanced oxidation rate, may be formed.

Abstract translation: 通过调节在沉积室内引入的含In，Al和As的前体的流速来形成VCSEL的电流限制层。 通过保持含砷前体的流速与含In和Al的前体的总流速（例如，小于25,10,5或1）之间的低比例，电流限制层，晶格匹配 至InP并具有增强的氧化速率。

公开(公告)号：US20130164773A1

公开(公告)日：2013-06-27

申请号：US13337889

申请日：2011-12-27

Applicant: Ron Bardell ,  Tzu-Yu Wang ,  Mark Washa

Inventor： Ron Bardell ,  Tzu-Yu Wang ,  Mark Washa

IPC: C12Q1/02 ,  B01L3/00

CPC classification number: B01L3/502738 ,  B01L3/502723 ,  B01L3/502776 ,  B01L2200/0684 ,  B01L2300/0654 ,  B01L2300/0816 ,  B01L2300/0874 ,  B01L2300/0883 ,  B01L2300/0887 ,  B01L2400/0406 ,  B01L2400/049 ,  B01L2400/0655 ,  G01N15/1459 ,  G01N15/1484 ,  G01N21/05 ,  G01N21/532 ,  G01N2015/1006 ,  G01N2021/0321 ,  G01N2021/0346 ,  G01N2021/058 ,  G01N2035/00158

Abstract: A disposable blood analysis cartridge for analyzing a blood sample including an optical light scattering measurement channel is described. In use, processed sample may be introduced into a sheath fluid channel at an angle, α, of approximately 90 degrees, relative to the direction of flow of the sheath fluid. In addition, delivering the sample from the side into the sheath fluid may facilitate better positioning of the core within the hydrodynamic focusing channel for measurement.

Abstract translation: 描述了用于分析包含光学散射测量通道的血液样本的一次性血液分析盒。 在使用中，加工样品可以相对于护套流体的流动方向以大约90度的角度α被引入护套流体通道。 此外，将样品从侧面输送到护套流体可以有助于将芯更好地定位在用于测量的流体动力学聚焦通道内。

公开(公告)号：US20130092935A1

公开(公告)日：2013-04-18

申请号：US13272004

申请日：2011-10-12

Applicant: Tzu-Yu Wang ,  Chen-Hua Yu ,  Shin-Puu Jeng ,  Shang-Yun Hou ,  Hsien-Pin Hu ,  Wei-Cheng Wu ,  Li-Han Hsu ,  Meng-Han Lee

Inventor： Tzu-Yu Wang ,  Chen-Hua Yu ,  Shin-Puu Jeng ,  Shang-Yun Hou ,  Hsien-Pin Hu ,  Wei-Cheng Wu ,  Li-Han Hsu ,  Meng-Han Lee

IPC: H01L23/58 ,  G01R31/26

CPC classification number: H01L22/32 ,  H01L23/3128 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/5384 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L25/0655 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: An interposer includes a first surface on a first side of the interposer and a second surface on a second side of the interposer, wherein the first and the second sides are opposite sides. A first probe pad is disposed at the first surface. An electrical connector is disposed at the first surface, wherein the electrical connector is configured to be used for bonding. A through-via is disposed in the interposer. Front-side connections are disposed on the first side of the interposer, wherein the front-side connections electrically couple the through-via to the probe pad.

Abstract translation: 插入器包括在插入件的第一侧上的第一表面和在插入件的第二侧上的第二表面，其中第一和第二侧是相对的两侧。 第一探针垫设置在第一表面。 电连接器设置在第一表面处，其中电连接器被配置为用于接合。 通孔设置在插入器中。 前侧连接设置在插入件的第一侧上，其中前侧连接将通孔电连接到探针垫。

公开(公告)号：US08294264B2

公开(公告)日：2012-10-23

申请号：US12750221

申请日：2010-03-30

Applicant: Tzu-Yu Wang ,  Chi-Chun Hsieh ,  An-Jhih Su ,  Hsien-Wei Chen ,  Shin-Puu Jeng ,  Liwei Lin

Inventor： Tzu-Yu Wang ,  Chi-Chun Hsieh ,  An-Jhih Su ,  Hsien-Wei Chen ,  Shin-Puu Jeng ,  Liwei Lin

IPC: H01L23/48 ,  H01L23/52

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/04 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/05551 ,  H01L2224/05552 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/1147 ,  H01L2224/13007 ,  H01L2224/13015 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012

Abstract: An under-bump metallization (UBM) structure for a semiconductor device is provided. The UBM structure has a center portion and extensions extending out from the center portion. The extensions may have any suitable shape, including a quadrangle, a triangle, a circle, a fan, a fan with extensions, or a modified quadrangle having a curved surface. Adjacent UBM structures may have the respective extensions aligned or rotated relative to each other. Flux may be applied to a portion of the extensions to allow an overlying conductive bump to adhere to a part of the extensions.

Abstract translation: 提供了一种用于半导体器件的凸块下金属化（UBM）结构。 UBM结构具有从中心部分延伸出的中心部分和延伸部分。 延伸部可以具有任何合适的形状，包括四边形，三角形，圆形，风扇，具有延伸部的风扇或具有弯曲表面的改进的四边形。 相邻的UBM结构可以具有相对于彼此对准或旋转的相应延伸部。 焊剂可以施加到延伸部分的一部分，以允许覆盖的导电凸块粘附到延伸部分的一部分上。

公开(公告)号：US20110241201A1

公开(公告)日：2011-10-06

申请号：US12750221

申请日：2010-03-30

Applicant: Tzu-Yu Wang ,  Chi-Chun Hsieh ,  An-Jhih Su ,  Hsien-Wei Chen ,  Shin-Puu Jeng ,  Liwei Lin

Inventor： Tzu-Yu Wang ,  Chi-Chun Hsieh ,  An-Jhih Su ,  Hsien-Wei Chen ,  Shin-Puu Jeng ,  Liwei Lin

IPC: H01L23/498 ,  H01L21/768

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/04 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/05551 ,  H01L2224/05552 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/1147 ,  H01L2224/13007 ,  H01L2224/13015 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012

Abstract: An under-bump metallization (UBM) structure for a semiconductor device is provided. The UBM structure has a center portion and extensions extending out from the center portion. The extensions may have any suitable shape, including a quadrangle, a triangle, a circle, a fan, a fan with extensions, or a modified quadrangle having a curved surface. Adjacent UBM structures may have the respective extensions aligned or rotated relative to each other. Flux may be applied to a portion of the extensions to allow an overlying conductive bump to adhere to a part of the extensions.

Abstract translation: 提供了一种用于半导体器件的凸块下金属化（UBM）结构。 UBM结构具有从中心部分延伸出的中心部分和延伸部分。 延伸部可以具有任何合适的形状，包括四边形，三角形，圆形，风扇，具有延伸部的风扇或具有弯曲表面的改进的四边形。 相邻的UBM结构可以具有相对于彼此对准或旋转的相应延伸部。 焊剂可以施加到延伸部分的一部分，以允许覆盖的导电凸块粘附到延伸部分的一部分上。

公开(公告)号：US08007704B2

公开(公告)日：2011-08-30

申请号：US11458718

申请日：2006-07-20

Applicant: Timothy J. Smith ,  Tzu-Yu Wang ,  Adam Z. Eskridge

Inventor： Timothy J. Smith ,  Tzu-Yu Wang ,  Adam Z. Eskridge

IPC: B29C45/14

CPC classification number: B29C45/14811 ,  B29K2705/00 ,  B29L2031/749 ,  B29L2031/7506 ,  F16K31/02

Abstract: The present invention relates to electrostatically actuated device components and methods of making the same. In an embodiment, the invention includes a method of making an electrostatically actuated device component including providing a multilayered structure comprising a first layer comprising a first polymer, a second layer comprising a conductive material, the second layer disposed over the first layer, a third layer comprising a dielectric material, the third layer disposed over the second layer, positioning the multilayered structure within an injection mold, and injecting a second polymer into the mold and bonding the first layer to the second polymer to produce an electrostatically actuated device component. In an embodiment, the invention includes a method of injection molding a stator component for an electrostatically actuated valve.

Abstract translation: 本发明涉及静电致动装置部件及其制造方法。 在一个实施例中，本发明包括一种制造静电致动装置部件的方法，该方法包括提供多层结构，该多层结构包括第一层，该第一层包括第一聚合物，第二层包括导电材料，第二层设置在第一层上，第三层 包括介电材料，所述第三层设置在所述第二层之上，将所述多层结构定位在注射模具内，以及将第二聚合物注入到所述模具中并将所述第一层粘合到所述第二聚合物以产生静电致动装置部件。 在一个实施例中，本发明包括注射成型用于静电致动阀的定子部件的方法。

公开(公告)号：US07168675B2

公开(公告)日：2007-01-30

申请号：US11018799

申请日：2004-12-21

Applicant: Eugen I. Cabuz ,  Cleopatra Cabuz ,  Tzu-Yu Wang

Inventor： Eugen I. Cabuz ,  Cleopatra Cabuz ,  Tzu-Yu Wang

IPC: F16K7/04

CPC classification number: F16K31/02

Abstract: A valve structure having a top part, a flexible media conveyance, such as a tube, a diaphragm and a bottom part with a support for the tube. The top surface of the diaphragm and the bottom surface of the top part may have electrodes attached. When there is no electric potential applied across the electrodes, the diaphragm may rest on and close the passageway in the flexible tube for effectively preventing a fluid flow. When an electrical potential is applied to the electrodes, the diaphragm may be pulled up off from the tube thereby opening or partially opening the passageway in the tube for a media flow or pressure transfer. Partial opening may be for modulation purposes. There may be a tension mechanism attached to the diaphragm. A controller may apply an electrical potential to the electrodes for at least partially opening or closing the valve.

Abstract translation: 具有顶部部分的柔性介质输送器，诸如管子，隔膜和具有用于管的支撑件的底部的阀结构。 隔膜的上表面和顶部的底表面可以具有连接的电极。 当电极上没有施加电位时，隔膜可以搁置在柔性管中并关闭柔性管中的通道，以有效地防止流体流动。 当向电极施加电势时，隔膜可以从管中拉出，从而打开或部分打开管中的通道用于介质流或压力传递。 部分打开可以用于调制目的。 可能存在连接到隔膜的张力机构。 控制器可以向电极施加电势以至少部分地打开或关闭阀。