Left-handed material extended interaction klystron

    公开(公告)号:US20190057831A1

    公开(公告)日:2019-02-21

    申请号:US16131028

    申请日:2018-11-13

    CPC classification number: H01J25/12 H01J23/20 H01J23/22

    Abstract: A left-handed material extended interaction klystron includes: an input cavity, a middle cavity, an output cavity, first-section drift tube and a second-section drift tube; wherein the input cavity, the middle cavity and the output cavity are all cylindrical resonant cavities having arrays of Complementary electric Split-Ring Resonator (CeSRR) unit cells provided therein; wherein a first side of the input cavity is an input channel of an electron beam, a second side connects the middle cavity via the first-section drift tube; a first T-shaped coaxial input structure is provided in the input cavity; a first side of the output cavity is for connecting a collector, a second side of the output cavity connects the middle cavity via the second-section drift tube, a second T-shaped coaxial output structure is provided in the output cavity.

    Antenna for generating arbitrarily directed Bessel beam

    公开(公告)号:US20190036214A1

    公开(公告)日:2019-01-31

    申请号:US15959305

    申请日:2018-04-23

    Abstract: An antenna for generating an arbitrarily directed Bessel beam, including a beam-forming plane and a feeding horn, the beam-forming plane is a dual-layer dielectric substrate structure having a beam focusing function, including: a printed circuit bottom layer, a high-frequency dielectric substrate lower layer, a printed circuit middle layer, a high-frequency dielectric substrate upper layer, and, a printed circuit upper layer; the printed circuit bottom layer, the high-frequency dielectric substrate lower layer, the printed circuit middle layer, the high-frequency dielectric substrate upper layer, and the printed circuit upper layer are co-axially stacked from the bottom to the top: the beam-forming plane is entirely divided into periodically arranged beam-forming units by a plurality of meshes, and each beam-forming unit consists of printed circuit upper, middle and lower metal patches of which centers are on the same longitudinal axis, the high-frequency dielectric substrate lower layer and the high-frequency dielectric substrate upper layer.

    Device for automatically generating test cases for embedded software using symbolic and concrete execution

    公开(公告)号:US10180899B2

    公开(公告)日:2019-01-15

    申请号:US15112689

    申请日:2014-07-30

    Abstract: A device and a method are provided to automatically generate test case for embedded software. This invention is in software test field, including symbolic execution kernel module, path selection module, solver, debugger, concrete execution kernel module and debugger agent module. The tested software and test cases are uploaded from the host system to the embedded system through debugger and debugger agent. The concrete execution kernel module starts the tested software. The symbolic execution kernel module captures the run-time information of the tested software through the debugger. When the tested software operates on the symbol source, the symbolic execution kernel module marks the symbol source, tracks the symbol propagation, generates path condition and sends the path condition to path selection module. This invention can automatically generate test cases for embedded software, which doesn't need the source code of the tested software and can be conveniently used for commercial software.

    Lateral high-voltage device
    79.
    发明授权

    公开(公告)号:US10068965B1

    公开(公告)日:2018-09-04

    申请号:US15718001

    申请日:2017-09-28

    Abstract: The present invention relates to a lateral high-voltage device. The device includes a dielectric trench region. A doping-overlapping structure with different doping types alternating mode is provided at least below, on a left side of, or on a right side of the dielectric trench region. The device also includes a dielectric layer, a body field plate, a polysilicon gate, a gate oxide layer, a first N-type heavy doping region, a second N-type heavy doping region, a P-type heavy doping region, a P-well region, the first N-type doping pillar, the second N-type doping pillar, the third N-type doping pillar, the first P-type doping pillar, and the second P-type doping pillar. The invention adopts a dielectric trench region in the drift region to keep the breakdown voltage BV of the device while reducing the surface area of the device, and effectively reducing the device's specific On-Resistance RON,sp.

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