Apparatuses, methods, and systems for dense circuitry using tunnel field effect transistors
    71.
    发明授权
    Apparatuses, methods, and systems for dense circuitry using tunnel field effect transistors 有权
    使用隧道场效应晶体管的密集电路的装置,方法和系统

    公开(公告)号:US09490780B2

    公开(公告)日:2016-11-08

    申请号:US14575962

    申请日:2014-12-18

    Abstract: Embodiments include apparatuses, methods, and systems for a circuit to shift a voltage level. The circuit may include a first inverter that includes a first transistor coupled to pass a low voltage signal and a second inverter coupled to receive the low voltage signal. The circuit may further include a second transistor coupled to receive the low voltage signal from the second inverter to serve as a feedback device and produce a high voltage signal. In embodiments, the first transistor conducts asymmetrically to prevent crossover of the high voltage signal into the low voltage domain. A low voltage memory array is also described. In embodiments, the circuit to shift a voltage level may assist communication between a logic component including the low voltage memory array of a low voltage domain and a logic component of a high voltage domain. Additional embodiments may also be described.

    Abstract translation: 实施例包括用于移位电压电平的电路的装置,方法和系统。 电路可以包括第一反相器,其包括耦合以传递低电压信号的第一晶体管和耦合以接收低电压信号的第二反相器。 电路还可以包括第二晶体管,其被耦合以从第二反相器接收低电压信号,以用作反馈装置并产生高电压信号。 在实施例中,第一晶体管不对称地导通,以防止高电压信号到低电压域的交叉。 还描述了低电压存储器阵列。 在实施例中,用于移位电压电平的电路可以有助于包括低电压域的低电压存储器阵列和高电压域的逻辑分量的逻辑组件之间的通信。 还可以描述另外的实施例。

    Multigate resonant channel transistor
    72.
    发明授权
    Multigate resonant channel transistor 有权
    多谐振通道晶体管

    公开(公告)号:US09294035B2

    公开(公告)日:2016-03-22

    申请号:US13994714

    申请日:2013-03-28

    Abstract: An embodiment includes an oscillator comprising an amplifier formed on a substrate; a multiple gate resonant channel array, formed on the substrate, including: (a) transistors including fins, each of the fins having a channel between source and drain nodes, coupled to common source and drain contacts; and (b) common first and second tri-gates coupled to each of the fins and located between the source and drain contacts; wherein the fins mechanically resonate at a first frequency when one of the first and second tri-gates is periodically activated to produce periodic downward forces on the fins. Other embodiments include a non planar transistor with a channel between the source and drain nodes and a tri-gate on the fin; wherein the fin mechanically resonates when the first tri-gate is periodically activated to produce periodic downward forces on the fin. Other embodiments are described herein.

    Abstract translation: 实施例包括:振荡器,包括形成在基板上的放大器; 形成在所述衬底上的多栅极共振沟道阵列包括:(a)包括鳍片的晶体管,每个鳍片在源极和漏极节点之间具有耦合到共源极和漏极触点的沟道; 和(b)共同的第一和第二三栅极,其耦合到每个散热片并且位于源极和漏极接触之间; 其中当第一和第二三门中的一个被周期性地激活以在翅片上产生周期性向下的力时,翅片以第一频率机械共振。 其他实施例包括在源极和漏极节点之间具有沟道的非平面晶体管和鳍上的三栅极; 其中当所述第一三栅极被周期性地激活以在所述散热片上产生周期性向下的力时,所述翅片机械谐振。 本文描述了其它实施例。

    Wireless oscillator neural network
    74.
    发明授权

    公开(公告)号:US12001941B2

    公开(公告)日:2024-06-04

    申请号:US16194792

    申请日:2018-11-19

    CPC classification number: G06N3/049 G06N3/045 G06N3/08

    Abstract: Embodiments may relate to a system to be used in an oscillating neural network (ONN). The system may include a control node and a plurality of nodes wirelessly communicatively coupled with a control node. A node of the plurality of nodes may be configured to identify an oscillation frequency of the node based on a weight W and an input X. The node may further be configured to transmit a wireless signal to the control node, wherein a frequency of the wireless signal oscillates based on the identified oscillation frequency. Other embodiments may be described or claimed.

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