公开(公告)号：US20250022965A1

公开(公告)日：2025-01-16

申请号：US18898827

申请日：2024-09-27

Applicant: Japan Display Inc.

Inventor： Masashi TSUBUKU ,  Toshinari SASAKI ,  Hajime WATAKABE ,  Takaya TAMARU

IPC: H01L29/786 ,  H01L29/66

Abstract: A semiconductor device according to an embodiment includes: a metal oxide layer above a substrate, the metal oxide layer containing aluminum as a main component; an oxide semiconductor layer above the metal oxide layer; a gate electrode facing the oxide semiconductor layer; and a gate insulating layer between the oxide semiconductor layer and the gate electrode, wherein the oxide semiconductor layer includes two or more metals including indium, and a ratio of indium in the two or more metals is 50% or more.

公开(公告)号：US20250022964A1

公开(公告)日：2025-01-16

申请号：US18760532

申请日：2024-07-01

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Masashi TSUBUKU ,  Toshinari SASAKI ,  Takaya TAMARU ,  Marina MOCHIZUKI ,  Ryo ONODERA ,  Masahiro WATABE

IPC: H01L29/786 ,  H01L29/423

Abstract: A semiconductor device comprises a first insulating layer, an oxide semiconductor layer having a polycrystalline structure on the first insulating layer, a gate insulating layer on the oxide semiconductor layer, a gate wiring on the gate insulating layer, and a second insulating layer on the gate wiring. The oxide semiconductor layer has a first region, a second region and a third region aligned toward a first direction. The first region overlaps the gate insulating layer and the gate wiring. The third region is in contact with the second insulating layer. A distance from a top surface of the second region to a top surface of the second insulating layer is longer than a distance from a top surface of the third region to the top surface of the second insulating layer.

公开(公告)号：US20250015198A1

公开(公告)日：2025-01-09

申请号：US18894269

申请日：2024-09-24

Applicant: Japan Display Inc. ,  IDEMITSU KOSAN CO., LTD.

Inventor： Hajime WATAKABE ,  Masashi TSUBUKU ,  Toshinari SASAKI ,  Takaya TAMARU ,  Emi KAWASHIMA ,  Yuki TSURUMA ,  Daichi SASAKI

IPC: H01L29/786 ,  C01G15/00 ,  C23C14/08 ,  H01L29/66

Abstract: An oxide semiconductor film having crystallinity over a substrate contains indium (In) and a first metal element (M1). The oxide semiconductor film includes a plurality of crystal grains. Each of the plurality of crystal grains includes at least one of a crystal orientation , a crystal orientation , and a crystal orientation obtained by an electron backscatter diffraction (EBSD) method. In occupancy rates of crystal orientations calculated based on measurement points having crystal orientations with a crystal orientation difference greater than or equal to 0 degrees and less than or equal to 15 degrees with respect to a normal direction of a surface of the substrate, an occupancy rate of the crystal orientation is greater than an occupancy rate of the crystal orientation and an occupancy rate of the crystal orientation .

公开(公告)号：US20240429321A1

公开(公告)日：2024-12-26

申请号：US18826548

申请日：2024-09-06

Applicant: Japan Display Inc.

Inventor： Masashi TSUBUKU ,  Michiaki SAKAMOTO ,  Takashi OKADA ,  Toshiki KANEKO ,  Tatsuya TODA

IPC: H01L29/786 ,  H01L29/417

Abstract: A semiconductor device includes a gate electrode on a substrate, a gate insulating film on the gate electrode, an oxide semiconductor film via the gate insulating film on the gate electrode, a source electrode and a drain electrode on the oxide semiconductor film, a protective film provided on the source electrode and the drain electrode; and a conductive layer provided on the protective film and overlapped on the oxide semiconductor layer. The protective film includes a first silicon oxide film and a first silicon nitride film. The first oxide film is in contact with the oxide semiconductor layer. The gate insulating film includes a second silicon nitride film and a second silicon oxide film. The second silicon oxide film is in contact with the oxide semiconductor layer. The oxide semiconductor layer has a first region located between the source electrode and the drain electrode in a plan view.

公开(公告)号：US20240381693A1

公开(公告)日：2024-11-14

申请号：US18781243

申请日：2024-07-23

Applicant: Japan Display Inc.

Inventor： Masashi TSUBUKU

IPC: H10K59/121 ,  H10K59/124

Abstract: A display device includes a light-emitting element, a first transistor controlling a current value flowing from a driving power supply line to the light-emitting element, and a second transistor applying a voltage corresponding to a luminance of the light-emitting element to a first gate electrode of the first transistor, the first transistor including the first gate electrode, a first insulating film, a first oxide semiconductor layer, a second insulating film, and a first conductive layer, the second transistor including the first insulating film, a second oxide semiconductor layer, a second insulating film, and a second gate electrode.

公开(公告)号：US20240288739A1

公开(公告)日：2024-08-29

申请号：US18433729

申请日：2024-02-06

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Masashi TSUBUKU ,  Toshinari SASAKI ,  Takaya TAMARU ,  Marina MOCHIZUKI ,  Ryo ONODERA

IPC: G02F1/1362 ,  G02F1/1368 ,  H01L27/12

CPC classification number: G02F1/136295 ,  G02F1/13685 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1225

Abstract: An electronic device comprises a first stacked structure including a first oxide semiconductor layer having a polycrystalline structure, a first insulating layer on the first oxide semiconductor layer, and a first conductive layer overlapping the first oxide semiconductor layer via the first insulating layer; and a second stacked structure including a second oxide semiconductor layer composed of the same layer as the first oxide semiconductor layer, the first insulating layer on the second oxide semiconductor layer, and a second conductive layer overlapping the second oxide semiconductor layer via the first insulating layer and composed of the same layer as the first conductive layer. A portion of the first oxide semiconductor layer not overlapping the first conductive layer contains an impurity element, and the second oxide semiconductor layer does not contain the impurity element.

公开(公告)号：US20240213393A1

公开(公告)日：2024-06-27

申请号：US18597953

申请日：2024-03-07

Applicant: Japan Display Inc.

Inventor： Masashi TSUBUKU ,  Takanori TSUNASHIMA ,  Marina MOCHIZUKI

IPC: H01L31/12 ,  G06F1/16 ,  H01L31/101

CPC classification number: H01L31/125 ,  G06F1/1605 ,  H01L31/1016

Abstract: A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.

公开(公告)号：US20230420485A1

公开(公告)日：2023-12-28

申请号：US18466043

申请日：2023-09-13

Applicant: Japan Display Inc.

Inventor： Masanobu IKEDA ,  Masumi NISHIMURA ,  Masashi TSUBUKU

IPC: H01L27/15

CPC classification number: H01L27/156 ,  H01L27/1225

Abstract: A display device includes an amorphous glass substrate, a first buffer layer on a first surface of the amorphous glass substrate, a transistor including a first gallium nitride layer over the first buffer layer, a second buffer layer on the first surface of the amorphous glass substrate, and a light emitting diode including a second gallium nitride layer over the second buffer layer. The transistor and the light emitting diode are electrically connected to each other.

公开(公告)号：US20230292551A1

公开(公告)日：2023-09-14

申请号：US18176503

申请日：2023-03-01

Applicant: Japan Display Inc.

Inventor： Masashi TSUBUKU ,  Takeshi SAKAI ,  Kentaro MIURA ,  Hajime WATAKABE ,  Takaya TAMARU ,  Hiroshi TABATAKE ,  Yutaka UMEDA

IPC: H10K59/121

CPC classification number: H10K59/1213 ,  H01L27/1255

Abstract: A display device includes a light-emitting element; a first transistor and a second transistor connected in series between the light-emitting element and a driving power line; a third transistor electrically connected to a gate electrode of the first transistor; and a fourth transistor connected in parallel between a drain electrode of the first transistor and the light-emitting element, wherein a ratio of a channel width W1 to a channel length L1 of the first transistor (a W1/L1 ratio) and a ratio of a channel width W2 to a channel length L2 of the second transistor (a W2/L2 ratio) are larger than a ratio of a channel width W3 to a channel length L3 of the third transistor (a W3/L3 ratio) and a ratio of a channel width W4 to a channel length L4 of the fourth transistor (a W4/L4 ratio).

公开(公告)号：US20220310965A1

公开(公告)日：2022-09-29

申请号：US17699224

申请日：2022-03-21

Applicant: Japan Display Inc.

Inventor： Hayata AOKI ,  Masashi TSUBUKU ,  Toshinari SASAKI

IPC: H01L51/52

Abstract: According to one embodiment, a display device comprises a first area including a pixel and a second area different from the first area, wherein the pixel comprises a pixel electrode, an organic material layer including a light-emitting layer, a common electrode, a first insulating layer, a second insulating layer having a refractive index lower than that of the first insulating layer, and a third insulating layer, the second area is an area not overlapping the light-emitting layer in plan view, the second area is a transparent area, and the second area comprises the first insulating layer provided therein, the second area does not comprise the second insulating layer.