Methods and systems for point of use removal of sacrificial material
    78.
    发明授权
    Methods and systems for point of use removal of sacrificial material 有权
    使用方法和系统去除牺牲材料

    公开(公告)号:US09080968B2

    公开(公告)日:2015-07-14

    申请号:US13734696

    申请日:2013-01-04

    CPC classification number: H01L21/31105 G01N27/4145 H01L21/31144

    Abstract: A method of manufacturing a sensor, the method including forming an array of chemically-sensitive field effect transistors (chemFETs), depositing a dielectric layer over the chemFETs in the array, depositing a protective layer over the dielectric layer, etching the dielectric layer and the protective layer to form cavities corresponding to sensing surfaces of the chemFETs, and removing the protective layer. The method further includes, etching the dielectric layer and the protective layer together to form cavities corresponding to sensing surfaces of the chemFETs. The protective layer is at least one of a polymer, photoresist material, noble metal, copper oxide, and zinc oxide. The protective layer is removed using at least one of sodium hydroxide, organic solvent, aqua regia, ammonium carbonate, hydrochloric acid, acetic acid, and phosphoric acid.

    Abstract translation: 一种制造传感器的方法,所述方法包括形成化学敏感场效应晶体管阵列(chemFET),在阵列中的chemFET上沉积介电层,在电介质层上沉积保护层,蚀刻电介质层和 保护层以形成对应于chemFET的感测表面的空腔,以及去除保护层。 该方法还包括:将电介质层和保护层一起蚀刻以形成对应于chemFET的感测表面的空腔。 保护层是聚合物,光致抗蚀剂材料,贵金属,氧化铜和氧化锌中的至少一种。 使用氢氧化钠,有机溶剂,王水,碳酸铵,盐酸,乙酸和磷酸中的至少一种除去保护层。

    Methods and apparatus for detecting molecular interactions using FET arrays
    79.
    发明授权
    Methods and apparatus for detecting molecular interactions using FET arrays 有权
    使用FET阵列检测分子相互作用的方法和装置

    公开(公告)号:US09039888B2

    公开(公告)日:2015-05-26

    申请号:US14033934

    申请日:2013-09-23

    Abstract: Methods and apparatuses relating to large scale FET arrays for analyte detection and measurement are provided. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes.

    Abstract translation: 提供了与用于分析物检测和测量的大规模FET阵列相关的方法和装置。 可以使用基于提高测量灵敏度和精度的改进的FET像素和阵列设计的传统CMOS处理技术来制造ChemFET(例如,ISFET)阵列,并且同时促进显着小的像素尺寸和致密阵列。 改进的阵列控制技术提供了从大型和密集阵列的快速数据采集。 可以使用这样的阵列来检测各种化学和/或生物过程中各种分析物类型的存在和/或浓度变化。

    Chemically-sensitive sample and hold sensors
    80.
    发明授权
    Chemically-sensitive sample and hold sensors 有权
    化学敏感的采样和保持传感器

    公开(公告)号:US08766328B2

    公开(公告)日:2014-07-01

    申请号:US13923282

    申请日:2013-06-20

    Abstract: Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.

    Abstract translation: 与用于分析物测量的非常大规模的FET阵列相关的方法和装置。 可以使用基于提高测量灵敏度和精度的改进的FET像素和阵列设计的传统CMOS处理技术来制造ChemFET(例如,ISFET)阵列,并且同时促进显着小的像素尺寸和致密阵列。 改进的阵列控制技术提供了从大型和密集阵列的快速数据采集。 可以使用这样的阵列来检测各种化学和/或生物过程中各种分析物类型的存在和/或浓度变化。 在一个实例中,chemFET阵列基于监测氢离子浓度(pH),其他分析物浓度变化和/或与DNA合成相关的化学过程相关联的结合事件的变化来促进DNA测序技术。

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