LUMINESCENCE DIODE CHIP WITH CURRENT SPREADING LAYER AND METHOD FOR PRODUCING THE SAME
    71.
    发明申请
    LUMINESCENCE DIODE CHIP WITH CURRENT SPREADING LAYER AND METHOD FOR PRODUCING THE SAME 有权
    具有电流扩展层的发光二极管芯片及其制造方法

    公开(公告)号:US20090127580A1

    公开(公告)日:2009-05-21

    申请号:US12158474

    申请日:2006-11-21

    CPC classification number: H01L33/145 H01L33/42

    Abstract: An LED chip is specified that comprises at least one current barrier. The current barrier is suitable for selectively preventing or reducing, by means of a reduced current density, the generation of radiation in a region laterally covered by the electrical connector body. The current spreading layer contains at least one TCO (Transparent Conductive Oxide). In a particularly preferred embodiment, at least one current barrier is contained which comprises material of the epitaxial semiconductor layer sequence, material of the current spreading layer and/or an interface between the semiconductor layer sequence and the current spreading layer. A method for producing an LED chip is also specified.

    Abstract translation: 指定包括至少一个电流屏障的LED芯片。 电流屏障适合于通过减小的电流密度选择性地防止或减少由电连接器主体横向覆盖的区域中的辐射的产生。 电流扩散层含有至少一种TCO(透明导电氧化物)。 在特别优选的实施例中,包含至少一个电流屏障,其包括外延半导体层序列的材料,电流扩展层的材料和/或半导体层序列和电流扩展层之间的界面。 还指定了用于制造LED芯片的方法。

    Optoelectronic Semiconductor Chip
    72.
    发明申请
    Optoelectronic Semiconductor Chip 审中-公开
    光电半导体芯片

    公开(公告)号:US20090121245A1

    公开(公告)日:2009-05-14

    申请号:US11992843

    申请日:2006-09-14

    Applicant: Ralph Wirth

    Inventor: Ralph Wirth

    Abstract: An optoelectronic semiconductor chip is disclosed which emits electromagnetic radiation from its front side (7) during operation, comprising: a semiconductor layer sequence (1) having an active region (4) suitable for generating the electromagnetic radiation, and a self-supporting and electrically conductive mechanical supporting layer (10) formed on the semiconductor layer sequence, which supporting layer mechanically supports the semiconductor layer sequence (1) and is transmissive to radiation of the semiconductor chip.

    Abstract translation: 公开了一种光电半导体芯片,其在操作期间从其正面(7)发射电磁辐射,包括:具有适于产生电磁辐射的有源区(4)的半导体层序列(1),以及自支撑和电 形成在半导体层序列上的导电机械支撑层(10),该支撑层机械地支撑半导体层序列(1)并且对半导体芯片的辐射是透射的。

    Semiconductor chip for optoelectronics and method for the production thereof
    73.
    发明授权
    Semiconductor chip for optoelectronics and method for the production thereof 有权
    光电半导体芯片及其生产方法

    公开(公告)号:US07435999B2

    公开(公告)日:2008-10-14

    申请号:US11120774

    申请日:2005-05-02

    CPC classification number: H01L33/20 H01L33/387

    Abstract: A semiconductor chip for optoelectronics having a thin-film layer, in which a zone that emits electromagnetic radiation is formed and which has an emission side, a rear side and side faces that connect the rear side to the emission side. A carrier for the thin-film layer is arranged at the rear side thereof and is connected thereto. At least one electrical front side contact structure is formed on the emission side and at least one trench is formed on the rear side. The trench defines at least a single partial region which essentially does not overlap the front side contact structure.

    Abstract translation: 一种具有薄膜层的光电子半导体芯片,其中形成发射电磁辐射的区域,并且具有将后侧与发射侧连接的发射侧,后侧和侧面。 用于薄膜层的载体被布置在其后侧并与其连接。 在发射侧形成至少一个电前侧接触结构,并且在后侧形成至少一个沟槽。 沟槽限定至少一个基本上不与前侧接触结构重叠的部分区域。

    Radiation emitting semi-conductor element
    75.
    发明申请
    Radiation emitting semi-conductor element 有权
    辐射发射半导体元件

    公开(公告)号:US20070181894A1

    公开(公告)日:2007-08-09

    申请号:US10567883

    申请日:2004-07-30

    CPC classification number: H01L33/40 H01L33/02

    Abstract: A radiation-emitting semiconductor component with a semiconductor body, including a first principal surface (5), a second principal surface (9) and a semiconductor layer sequence (4) with an electromagnetic radiation generating active zone (7), in which the semiconductor layer sequence (4) is disposed between the first and the second principal surfaces (5, 9), a first current spreading layer (3) is disposed on the first principal surface (5) and electrically conductively connected to the semiconductor layer sequence (4), and a second current spreading layer (10) is disposed on the second principal surface (9) and electrically conductively connected to the semiconductor layer sequence (4).

    Abstract translation: 一种具有半导体主体的辐射发射半导体部件,包括第一主表面(5),第二主表面(9)和具有电磁辐射产生活性区(7)的半导体层序列(4),其中半导体 层序列(4)设置在第一和第二主表面(5,9)之间,第一电流扩散层(3)设置在第一主表面(5)上并与半导体层序列(4)导电连接 ),并且第二电流扩展层(10)设置在第二主表面(9)上并与半导体层序列(4)导电连接。

    Radiation emitting semiconductor chip
    77.
    发明申请
    Radiation emitting semiconductor chip 有权
    辐射发射半导体芯片

    公开(公告)号:US20070081571A1

    公开(公告)日:2007-04-12

    申请号:US11528071

    申请日:2006-09-26

    Applicant: Ralph Wirth

    Inventor: Ralph Wirth

    Abstract: A radiation-emitting semiconductor chip (1) comprising a thin-film semiconductor body (2) which has a semiconductor layer sequence with an active region (4) suitable for generating radiation, and a reflector layer (5) arranged on the thin-film semiconductor body. The semiconductor chip has a Bragg reflector in addition to the reflector layer, and the Bragg reflector (6) and the reflector layer are arranged on the same side of the active region.

    Abstract translation: 一种发光半导体芯片(1),包括具有半导体层序列的薄膜半导体本体(2),所述半导体层序列具有适于产生辐射的有源区(4)和布置在所述薄膜上的反射层(5) 半导体体。 半导体芯片除了反射层之外还具有布拉格反射器,并且布拉格反射器(6)和反射器层布置在有源区的同一侧。

    Semiconductor chip for optoelectronics and method for the production thereof
    79.
    发明申请
    Semiconductor chip for optoelectronics and method for the production thereof 有权
    光电半导体芯片及其生产方法

    公开(公告)号:US20050258444A1

    公开(公告)日:2005-11-24

    申请号:US11120774

    申请日:2005-05-02

    CPC classification number: H01L33/20 H01L33/387

    Abstract: A semiconductor chip for optoelectronics having a thin-film layer, in which a zone that emits electromagnetic radiation is formed and which has an emission side, a rear side and side faces that connect the rear side to the emission side. A carrier for the thin-film layer is arranged at the rear side thereof and is connected thereto. At least one electrical front side contact structure is formed on the emission side and at least one trench is formed on the rear side. The trench defines at least a single partial region which essentially does not overlap the front side contact structure.

    Abstract translation: 一种具有薄膜层的光电子半导体芯片,其中形成发射电磁辐射的区域,并且具有将后侧与发射侧连接的发射侧,后侧和侧面。 用于薄膜层的载体被布置在其后侧并与其连接。 在发射侧形成至少一个电前侧接触结构,并且在后侧形成至少一个沟槽。 沟槽限定至少一个基本上不与前侧接触结构重叠的部分区域。

    Light-emitting semiconductor component
    80.
    发明授权
    Light-emitting semiconductor component 有权
    发光半导体元件

    公开(公告)号:US06936853B2

    公开(公告)日:2005-08-30

    申请号:US10448952

    申请日:2003-05-30

    Applicant: Ralph Wirth

    Inventor: Ralph Wirth

    CPC classification number: H01L33/22 H01L33/08

    Abstract: In a light-emitting semiconductor component having a thin-film stack (30) having an active layer (34) and front- and rear-side contact regions (40, 42), which are formed on a front side (60) and a rear side (62) of the thin-film stack (30) and serve for impressing current into the active layer (34), the thin-film stack (30) has a light generation region (50), in which photons are generated by recombination of charge carriers, and has a light coupling-out region (54), in which light is coupled out from the component. The light generation region (50) and the light coupling-out region (54) are at least partly separated from one another in the plane of the thin-film stack (30).

    Abstract translation: 在具有活性层(34)的薄膜叠层(30)和形成在正面(60)上的前后接触区域(40,42)的发光半导体部件中, 薄膜叠层(30)的后侧(62)并且用于将电流施加到有源层(34)中,薄膜叠层(30)具有光生成区域(50),其中光子由 电荷载体的复合,并且具有光耦合出区域(54),其中光从该部件耦合出来。 光产生区域(50)和光耦合区域(54)在薄膜叠层(30)的平面中至少部分地彼此分离。

Patent Agency Ranking