Abstract:
An LED chip is specified that comprises at least one current barrier. The current barrier is suitable for selectively preventing or reducing, by means of a reduced current density, the generation of radiation in a region laterally covered by the electrical connector body. The current spreading layer contains at least one TCO (Transparent Conductive Oxide). In a particularly preferred embodiment, at least one current barrier is contained which comprises material of the epitaxial semiconductor layer sequence, material of the current spreading layer and/or an interface between the semiconductor layer sequence and the current spreading layer. A method for producing an LED chip is also specified.
Abstract:
An optoelectronic semiconductor chip is disclosed which emits electromagnetic radiation from its front side (7) during operation, comprising: a semiconductor layer sequence (1) having an active region (4) suitable for generating the electromagnetic radiation, and a self-supporting and electrically conductive mechanical supporting layer (10) formed on the semiconductor layer sequence, which supporting layer mechanically supports the semiconductor layer sequence (1) and is transmissive to radiation of the semiconductor chip.
Abstract:
A semiconductor chip for optoelectronics having a thin-film layer, in which a zone that emits electromagnetic radiation is formed and which has an emission side, a rear side and side faces that connect the rear side to the emission side. A carrier for the thin-film layer is arranged at the rear side thereof and is connected thereto. At least one electrical front side contact structure is formed on the emission side and at least one trench is formed on the rear side. The trench defines at least a single partial region which essentially does not overlap the front side contact structure.
Abstract:
A radiation-emitting component (10) having a layer stack (1) which is based on a semiconductor material and which has an active layer sequence (4) for generating electromagnetic radiation, and a filter element (2) which is arranged after the active layer sequence (4) in the irradiation direction (A) and by means of which a first radiation component is transmitted, and a second radiation component is reflected into the layer stack (1), wherein the second radiation component is subjected to a deflection process or an absorption and emission process, and the deflected or emitted radiation impinges on the filter element (2).
Abstract:
A radiation-emitting semiconductor component with a semiconductor body, including a first principal surface (5), a second principal surface (9) and a semiconductor layer sequence (4) with an electromagnetic radiation generating active zone (7), in which the semiconductor layer sequence (4) is disposed between the first and the second principal surfaces (5, 9), a first current spreading layer (3) is disposed on the first principal surface (5) and electrically conductively connected to the semiconductor layer sequence (4), and a second current spreading layer (10) is disposed on the second principal surface (9) and electrically conductively connected to the semiconductor layer sequence (4).
Abstract:
A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.
Abstract:
A radiation-emitting semiconductor chip (1) comprising a thin-film semiconductor body (2) which has a semiconductor layer sequence with an active region (4) suitable for generating radiation, and a reflector layer (5) arranged on the thin-film semiconductor body. The semiconductor chip has a Bragg reflector in addition to the reflector layer, and the Bragg reflector (6) and the reflector layer are arranged on the same side of the active region.
Abstract:
An optoelectronic semiconductor chip has an active layer containing a photon-emitting zone. The active layer is attached to a carrier member at a bonding side of the active layer. The active layer has at least one recess therein with a cross-sectional area that decreases with increasing depth into said active layer proceeding from said bonding side.
Abstract:
A semiconductor chip for optoelectronics having a thin-film layer, in which a zone that emits electromagnetic radiation is formed and which has an emission side, a rear side and side faces that connect the rear side to the emission side. A carrier for the thin-film layer is arranged at the rear side thereof and is connected thereto. At least one electrical front side contact structure is formed on the emission side and at least one trench is formed on the rear side. The trench defines at least a single partial region which essentially does not overlap the front side contact structure.
Abstract:
In a light-emitting semiconductor component having a thin-film stack (30) having an active layer (34) and front- and rear-side contact regions (40, 42), which are formed on a front side (60) and a rear side (62) of the thin-film stack (30) and serve for impressing current into the active layer (34), the thin-film stack (30) has a light generation region (50), in which photons are generated by recombination of charge carriers, and has a light coupling-out region (54), in which light is coupled out from the component. The light generation region (50) and the light coupling-out region (54) are at least partly separated from one another in the plane of the thin-film stack (30).