公开(公告)号：US06955938B2

公开(公告)日：2005-10-18

申请号：US10229888

申请日：2002-08-27

Applicant: Harry Rosenberg ,  Bahri Ozturk ,  Guangxin Wang ,  Wesley LaRue

Inventor： Harry Rosenberg ,  Bahri Ozturk ,  Guangxin Wang ,  Wesley LaRue

IPC: C01G35/00 ,  C22B3/04 ,  C22B5/00 ,  C22B5/04 ,  C22B9/22 ,  C22B34/24 ,  C22C27/02 ,  C23C14/14 ,  C23C14/34 ,  H01L21/00

CPC classification number: B22F1/0003 ,  B22F9/30 ,  B22F2999/00 ,  C01G35/006 ,  C22B5/00 ,  C22B34/24 ,  C22C27/02 ,  C23C14/3414 ,  H01G9/042 ,  Y10S438/923 ,  Y10S438/968 ,  B22F9/22 ,  B22F2201/00 ,  B22F2201/20

Abstract: Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.

Abstract translation: 描述了一种生产高纯度钽，所制造的高纯度钽和高纯度钽的溅射靶的方法。 该方法包括纯化原料，随后精制成高纯度钽。

公开(公告)号：US06566161B1

公开(公告)日：2003-05-20

申请号：US09717476

申请日：2000-11-20

Applicant: Harry Rosenberg ,  Bahri Ozturk ,  Guangxin Wang ,  Wesley LaRue

Inventor： Harry Rosenberg ,  Bahri Ozturk ,  Guangxin Wang ,  Wesley LaRue

IPC: H01L2100

CPC classification number: B22F1/0003 ,  B22F9/30 ,  B22F2999/00 ,  C01G35/006 ,  C22B5/00 ,  C22B34/24 ,  C22C27/02 ,  C23C14/3414 ,  H01G9/042 ,  Y10S438/923 ,  Y10S438/968 ,  B22F9/22 ,  B22F2201/00 ,  B22F2201/20

Abstract: Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.

公开(公告)号：US20030082864A1

公开(公告)日：2003-05-01

申请号：US10229888

申请日：2002-08-27

Inventor： Harry Rosenberg ,  Bahri Ozturk ,  Guangxin Wang ,  Wesley LaRue

IPC: H01L021/8238

CPC classification number: B22F1/0003 ,  B22F9/30 ,  B22F2999/00 ,  C01G35/006 ,  C22B5/00 ,  C22B34/24 ,  C22C27/02 ,  C23C14/3414 ,  H01G9/042 ,  Y10S438/923 ,  Y10S438/968 ,  B22F9/22 ,  B22F2201/00 ,  B22F2201/20

Abstract: Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.

公开(公告)号：US06323055B1

公开(公告)日：2001-11-27

申请号：US09316777

申请日：1999-05-21

Applicant: Harry Rosenberg ,  Bahri Ozturk ,  Guangxin Wang ,  Wesley LaRue

Inventor： Harry Rosenberg ,  Bahri Ozturk ,  Guangxin Wang ,  Wesley LaRue

IPC: H01L2100

CPC classification number: B22F1/0003 ,  B22F9/30 ,  B22F2999/00 ,  C01G35/006 ,  C22B5/00 ,  C22B34/24 ,  C22C27/02 ,  C23C14/3414 ,  H01G9/042 ,  Y10S438/923 ,  Y10S438/968 ,  B22F9/22 ,  B22F2201/00 ,  B22F2201/20

Abstract: Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.

Abstract translation: 描述了一种生产高纯度钽，所制造的高纯度钽和高纯度钽的溅射靶的方法。 该方法包括纯化原料，随后精制成高纯度钽。

公开(公告)号：US2811433A

公开(公告)日：1957-10-29

申请号：US48179655

申请日：1955-01-14

Applicant: REPUBLIC STEEL CORP

Inventor： IRVING WHITEHOUSE ,  GRAHAM MARION E ,  REED WILLIAM A

IPC: B22F1/00

CPC classification number: B22F1/0088 ,  B22F2999/00 ,  B22F2201/00

公开(公告)号：US2040168A

公开(公告)日：1936-05-12

申请号：US60110132

申请日：1932-03-25

Applicant: DE BATS JEAN HUBERT LOUIS

Inventor： DE BATS JEAN HUBERT LOUIS

IPC: B22F9/10

CPC classification number: B22F9/10 ,  B22F2009/0864 ,  B22F2009/0872 ,  B22F2999/00 ,  B22F2201/00

公开(公告)号：US12059748B2

公开(公告)日：2024-08-13

申请号：US17964366

申请日：2022-10-12

Applicant: General Electric Company

Inventor： William Thomas Carter ,  Justin John Gambone, Jr. ,  Lang Yuan ,  David Charles Bogdan, Jr. ,  Marshall Gordon Jones

IPC: B23K26/142 ,  B22F10/10 ,  B22F10/28 ,  B22F10/322 ,  B22F10/36 ,  B22F10/37 ,  B22F10/77 ,  B22F12/00 ,  B22F12/45 ,  B22F12/46 ,  B22F12/70 ,  B23K26/06 ,  B23K26/342 ,  B29C64/153 ,  B29C64/371 ,  B33Y10/00 ,  B33Y30/00

CPC classification number: B23K26/142 ,  B22F10/28 ,  B22F10/322 ,  B22F10/37 ,  B22F10/77 ,  B22F12/00 ,  B22F12/45 ,  B22F12/46 ,  B22F12/70 ,  B23K26/0604 ,  B23K26/342 ,  B29C64/153 ,  B29C64/371 ,  B33Y10/00 ,  B33Y30/00 ,  B22F10/10 ,  B22F10/36 ,  B22F2201/00 ,  B22F2201/10 ,  B22F2999/00 ,  Y02P10/25 ,  B22F2999/00 ,  B22F12/45 ,  B22F12/46 ,  B22F12/70 ,  B22F2201/00

Abstract: An additive manufacturing system including a housing configured to contain a powder bed of material, and an array of laser emitters having a field of view. The array is configured to melt at least a portion of the powder bed within the field of view as the array translates relative to the powder bed. The system further includes a spatter collection device including a diffuser configured to discharge a stream of gas across the powder bed, and a collector configured to receive the stream of gas and contaminants entrained in the stream of gas. The collector is spaced from the diffuser such that a collection zone is defined therebetween, and the spatter collection device is configured to translate relative to the powder bed such that the collection zone overlaps with the field of view of the array.

公开(公告)号：US20240261856A1

公开(公告)日：2024-08-08

申请号：US18616562

申请日：2024-03-26

Applicant: Vacuumschmelze GmbH & Co KG

Inventor： Kaan Üstüner ,  Matthias Katter ,  Christoph Brombacher ,  Daniela Benedikt

IPC: B22F7/08 ,  C22C19/07 ,  H01F1/055 ,  H01F41/02

CPC classification number: B22F7/08 ,  C22C19/07 ,  H01F1/055 ,  H01F41/0253 ,  B22F2201/00 ,  B22F2301/155 ,  C22C2202/02

Abstract: A method is provided for the heat treatment of an object comprising at least one rare-earth element with a high vapor pressure. One or more objects comprising at least one rare-earth element with a high vapor pressure are arranged in an interior of a package. An external source of the at least one rare-earth element is arranged so as to compensate for the evaporation of this same rare-earth element from the object and/or to increase the vapor pressure of the rare-earth element in the interior of the package, and the package is heat treated.

公开(公告)号：US12053824B2

公开(公告)日：2024-08-06

申请号：US17095218

申请日：2020-11-11

Applicant: Nikon SLM Solutions AG

Inventor： Matthew Schulz-Sciberras ,  Patrick Sharp

IPC: B01D53/34 ,  B01D50/20 ,  B01D53/38 ,  B01D53/73 ,  B22F1/145 ,  B22F1/16 ,  B22F10/28 ,  B22F10/85 ,  B22F12/70 ,  B22F12/90 ,  B33Y40/00 ,  B22F10/00 ,  B22F10/32 ,  B22F10/322 ,  B22F10/34 ,  B22F10/77 ,  B33Y10/00 ,  B33Y30/00

CPC classification number: B22F12/70 ,  B01D50/20 ,  B01D53/346 ,  B01D53/38 ,  B01D53/73 ,  B22F1/145 ,  B22F1/16 ,  B22F10/28 ,  B22F10/85 ,  B22F12/90 ,  B33Y40/00 ,  B01D2251/10 ,  B01D2258/02 ,  B22F10/00 ,  B22F10/32 ,  B22F10/322 ,  B22F10/34 ,  B22F10/77 ,  B33Y10/00 ,  B33Y30/00 ,  B22F2999/00 ,  B22F10/77 ,  B22F2201/00 ,  B22F2203/03

Abstract: In a method for treating combustible and/or reactive particles (34) which have been separated from a gas stream (32) by means of a separation device (36) an oxidizing agent is supplied to an atmosphere surrounding the particles (34) so as to cause a passivating oxidation of at least a part of the particles (34). A content of the oxidizing agent in the atmosphere surrounding the particles (34) is detected and the supply of the oxidizing agent to the atmosphere surrounding the particles (34) is controlled in dependence on the detected content of the oxidizing agent in the atmosphere surrounding the particles (34).

公开(公告)号：US20230405926A1

公开(公告)日：2023-12-21

申请号：US18461890

申请日：2023-09-06

Applicant: General Electric Company

Inventor： Andrew Martin ,  Justin Mamrak

IPC: B29C64/241 ,  B29C64/153 ,  B29C64/268 ,  B29C64/188 ,  B33Y50/02 ,  B33Y10/00 ,  B33Y30/00 ,  B29C64/245 ,  B29C64/371 ,  G05B19/4099 ,  B22F10/28 ,  B22F12/37 ,  B22F12/67

CPC classification number: B29C64/241 ,  B29C64/153 ,  B29C64/268 ,  B29C64/188 ,  B33Y50/02 ,  B33Y10/00 ,  B33Y30/00 ,  B29C64/245 ,  B29C64/371 ,  G05B19/4099 ,  B22F10/28 ,  B22F12/37 ,  B22F12/67 ,  B22F2999/00 ,  B22F2201/00 ,  B22F12/49

Abstract: The additive manufacturing device includes a positioning mechanism configured to provide independent movement of a build unit in at least two dimensions. The build unit may include a gasflow device for providing a flow zone and an irradiation beam directing unit. The irradiation beam directing unit may form a first solidification line and form a second solidification line at an angle other than 0° and 180° with respect to the first solidification line. During the formation of the first solidification line, the build unit may be positioned in a first orientation such that the first direction of the flow zone is substantially perpendicular to the first solidification line. During the formation of the second solidification line, the build unit may be positioned in a second orientation such that the flow zone along the first direction is substantially perpendicular to the second solidification line.