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    Process for producing air gaps in microstructures, especially of the air gap interconnect structure type for integrated circuits
    73.
    发明授权
    Process for producing air gaps in microstructures, especially of the air gap interconnect structure type for integrated circuits 有权
    在微结构中产生气隙的方法，特别是用于集成电路的气隙互连结构类型

    公开(公告)号：US08026165B2

    公开(公告)日：2011-09-27

    申请号：US12434018

    申请日：2009-05-01

    Applicant: Aziz Zenasni

    Inventor： Aziz Zenasni

    IPC: H01L21/4763

    CPC classification number: B81C1/00047 ,  B81C2201/0108 ,  B81C2201/0128 ,  H01L21/7682

    Abstract: A process for producing at least one air gap in a microstructure, including supplying a microstructure having at least one gap filled with a sacrificial material that decomposes starting from a temperature θ1, this gap being delimited over at least one part of its surface by a non-porous membrane, composed of a material that forms a matrix and of a pore-forming agent that decomposes at a temperature θ2

    Abstract translation: 一种用于在微结构中产生至少一个气隙的方法，包括提供具有填充有从温度开始分解的牺牲材料的至少一个间隙的微结构; 1，该间隙通过其表面的至少一部分被界定 由形成基质的材料和在温度下分解的成孔剂组成的无孔膜; 2＆lt;＆lt; 1; 1至少20℃，并分散在该基质中，然后处理 为了选择性地分解成孔剂，然后在温度≧≥1的条件下处理微结构，以便分解牺牲材料，温度≧＆amp;

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    75.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20100276765A1

    公开(公告)日：2010-11-04

    申请号：US12810279

    申请日：2008-12-12

    Applicant: Satoshi Yamamoto ,  Hirokazu Hashimoto

    Inventor： Satoshi Yamamoto ,  Hirokazu Hashimoto

    IPC: H01L29/84 ,  H01L21/50 ,  H01L31/0203

    CPC classification number: B81C1/00317 ,  B81C2201/0104 ,  B81C2201/0108 ,  B81C2201/0125 ,  B81C2203/0118 ,  B81C2203/0145 ,  H01L27/14618 ,  H01L27/14627 ,  H01L27/14683 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method of manufacturing a semiconductor device includes: a bonding step of bonding a first substrate with optical transparency and a second substrate having a surface on which a functional element is provided to each other such that the functional element faces the first substrate; a thinning step of thinning at least one of the first and second substrates; and a through-hole forming step of forming a cavity and a through-hole communicated with the cavity in at least part of a bonding portion between the first and second substrates. According to the present invention, it is possible to prevent irregularities or cracks caused by the presence or absence of the cavity and more regularly thin the substrate. In addition, it is possible to manufacture a semiconductor device capable of contributing to the miniaturization of devices and electronic equipment having the devices, using a more convenient process.

    Abstract translation: 一种制造半导体器件的方法包括：将具有光学透明性的第一衬底和第二衬底接合的接合步骤，其中功能元件彼此设置在其上，使得功能元件面向第一衬底; 减薄所述第一和第二基板中的至少一个的薄化步骤; 以及通孔形成步骤，在第一和第二基板之间的接合部分的至少一部分中形成与空腔连通的空腔和通孔。 根据本发明，可以防止由于空腔的存在或不存在引起的不规则或裂纹，并且更规则地使基板变薄。 此外，可以使用更方便的工艺来制造能够有助于具有该器件的器件和电子设备的小型化的半导体器件。

    METHOD OF CREATING MEMS DEVICE CAVITIES BY A NON-ETCHING PROCESS
    76.
    发明申请
    METHOD OF CREATING MEMS DEVICE CAVITIES BY A NON-ETCHING PROCESS 失效
    通过非蚀刻过程创建MEMS器件CAVI的方法

    公开(公告)号：US20100271688A1

    公开(公告)日：2010-10-28

    申请号：US12831898

    申请日：2010-07-07

    Applicant: Chun-Ming Wang ,  Jeffrey Lan ,  Teruo Sasagawa

    Inventor： Chun-Ming Wang ,  Jeffrey Lan ,  Teruo Sasagawa

    IPC: G02F1/19

    CPC classification number: B81C1/00047 ,  B81B2201/047 ,  B81C2201/0108 ,  B81C2201/0111 ,  G02B26/001

    Abstract: MEMS devices (such as interferometric modulators) may be fabricated using a sacrificial layer that contains a heat vaporizable polymer to form a gap between a moveable layer and a substrate. One embodiment provides a method of making a MEMS device that includes depositing a polymer layer over a substrate, forming an electrically conductive layer over the polymer layer, and vaporizing at least a portion of the polymer layer to form a cavity between the substrate and the electrically conductive layer. Another embodiment provides a method for making an interferometric modulator that includes providing a substrate, depositing a first electrically conductive material over at least a portion of the substrate, depositing a sacrificial material over at least a portion of the first electrically conductive material, depositing an insulator over the substrate and adjacent to the sacrificial material to form a support structure, and depositing a second electrically conductive material over at least a portion of the sacrificial material, the sacrificial material being removable by heat-vaporization to thereby form a cavity between the first electrically conductive layer and the second electrically conductive layer.

    Abstract translation: 可以使用包含热可汽化聚合物以在可移动层和基底之间形成间隙的牺牲层来制造MEMS器件（例如干涉式调制器）。 一个实施例提供了一种制造MEMS器件的方法，该MEMS器件包括在衬底上沉积聚合物层，在聚合物层上形成导电层，并蒸发聚合物层的至少一部分以在衬底和电 导电层。 另一个实施例提供了制造干涉式调制器的方法，该方法包括提供衬底，在衬底的至少一部分上沉积第一导电材料，在第一导电材料的至少一部分上沉积牺牲材料，沉积绝缘体 在所述衬底上并且邻近所述牺牲材料以形成支撑结构，以及在所述牺牲材料的至少一部分上沉积第二导电材料，所述牺牲材料可通过热蒸发而被去除，从而在所述第一电 导电层和第二导电层。

    Method of fabricating a polymer-based capacitive ultrasonic transducer
    79.
    发明授权
    Method of fabricating a polymer-based capacitive ultrasonic transducer 有权
    制造基于聚合物的电容式超声换能器的方法

    公开(公告)号：US07673375B2

    公开(公告)日：2010-03-09

    申请号：US11212611

    申请日：2005-08-29

    Applicant: Ming-Wei Chang ,  Da-Chen Pang ,  Chao-Sheng Tseng

    Inventor： Ming-Wei Chang ,  Da-Chen Pang ,  Chao-Sheng Tseng

    IPC: H01G7/00

    CPC classification number: B81B7/0012 ,  B06B1/0292 ,  B81C2201/0108 ,  Y10T29/435 ,  Y10T29/49005 ,  Y10T29/4908 ,  Y10T29/49172 ,  Y10T29/49194

    Abstract: A method of fabricating a polymer-based capacitive ultrasonic transducer, which comprises the steps of: (a) providing a substrate; (b) forming a first conductor on the substrate; (c) coating a sacrificial layer on the substrate while covering the first conductor by the same; (d) etching the sacrificial layer for forming an island while maintaining the island to contact with the first conductor; (e) coating a first polymer-based material on the substrate while covering the island by the same; (f) forming a second conductor on the first polymer-based material; (g) forming a via hole on the first polymer-based material while enabling the via hole to be channeled to the island; and (h) utilizing the via hole to etch and remove the island for forming a cavity.

    Abstract translation: 一种制造基于聚合物的电容式超声换能器的方法，包括以下步骤：（a）提供基底; （b）在所述基板上形成第一导体; （c）在衬底上涂覆牺牲层，同时覆盖第一导体; （d）蚀刻用于形成岛的牺牲层，同时保持岛与第一导体接触; （e）在衬底上涂覆第一聚合物基材料同时覆盖该岛; （f）在第一聚合物基材料上形成第二导体; （g）在第一聚合物基材料上形成通孔，同时使通孔能够引导到岛上; 和（h）利用通孔蚀刻并去除用于形成空腔的岛。

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