公开(公告)号：US20020149292A1

公开(公告)日：2002-10-17

申请号：US10100371

申请日：2002-03-14

Inventor： John H. Jerman ,  John D. Grade

IPC: H02N001/00

CPC classification number: B81B3/0086 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C2201/0178

Abstract: The present invention provides a miniature device that comprises a grounded layer, an insulative layer overlying the grounded layer and a conductive layer overlying the insulative layer wherein the insulative spacing between the conductive and grounded layers is increased so as to inhibit electrical shorting between the conductive layer and grounded layers. A method of making miniature devices is also provided.

Abstract translation: 本发明提供一种微型器件，其包括接地层，覆盖接地层的绝缘层和覆盖绝缘层的导电层，其中导电层和接地层之间的绝缘间距增加，以便抑制导电层之间的电短路 和接地层。 还提供了制造微型装置的方法。

公开(公告)号：US20020127760A1

公开(公告)日：2002-09-12

申请号：US09922590

申请日：2001-08-02

Inventor： Jer-Liang Yeh ,  Norman C. Tien

IPC: H01L021/00

CPC classification number: B81C1/00619 ,  B81B2203/0136 ,  B81C1/00182 ,  B81C2201/0132 ,  B81C2201/0178 ,  B81C2201/056 ,  H04R19/005

Abstract: The present invention provides a fabrication process that integrates high-aspect-ratio silicon structures with polysilicon surface micromachined structures. In some embodiments the process includes forming an oxide block by etching a plurality of trenches to leave a plurality of vertical-walled silicon structures standing on the substrate, thermally and substantially completely oxidizing the vertical-walled silicon structures, and substantially filling spaces between the oxidized vertical-walled silicon structures with an oxide of silicon to form the oxide block. The process retains not only the high-aspect-ratio silicon structures possible with deep reactive ion etching (DRIE) but also the design flexibility of polysilicon surface micromachining. Using this process, polysilicon platforms have been fabricated, which are actuated by high-aspect-ratio combdrives for many applications such as x-y-z stages and scanning devices. The actuators include an asymmetric combdrive that actuates in torsional/out-of-plane motions, and a high-aspect-ratio combdrive that drives in translational motion.

Abstract translation: 本发明提供了一种将高纵横比硅结构与多晶硅表面微加工结构相集成的制造工艺。 在一些实施方案中，该方法包括通过蚀刻多个沟槽来形成氧化物块，以留下多个垂直壁硅结构站立在衬底上，热并基本上完全氧化垂直壁硅结构，并且基本上填充氧化的 具有硅氧化物的垂直壁硅结构以形成氧化物块。 该过程不仅保留了高纵横比的硅结构，而且可以通过深反应离子蚀刻（DRIE）进行，而且还保留了多晶硅表面微机械加工的设计灵活性。 使用这个过程，已经制造了多晶硅平台，其由用于诸如x-y-z级和扫描装置的许多应用的高纵横比梳齿驱动。 致动器包括在扭转/超平面运动中致动的非对称梳齿驱动器以及在平移运动中驱动的高纵横比梳齿驱动。

公开(公告)号：US5930595A

公开(公告)日：1999-07-27

申请号：US950776

申请日：1997-10-15

Applicant: Uppili Sridhar ,  Liu Lian Jun ,  Foo Pang Dow ,  Lo Yong Hong ,  Maio Yu Bo

Inventor： Uppili Sridhar ,  Liu Lian Jun ,  Foo Pang Dow ,  Lo Yong Hong ,  Maio Yu Bo

IPC: B81B3/00 ,  B81C1/00 ,  G01L9/00 ,  G01P15/08 ,  H01L21/62

CPC classification number: B81C1/00246 ,  B81B3/0086 ,  G01L9/0042 ,  G01P15/0802 ,  B81B2203/0307 ,  B81B2203/033 ,  B81C2201/0178 ,  B81C2201/053 ,  B81C2203/0735

Abstract: A novel process for fabricating an integrated circuit sensor/actuator is described. Silicon islands are created by forming deep trenches in a substrate and lining the trenches with oxide. This forms silicon islands substantially surrounded by electrically isolating oxide. The anchor portion of the sensor/actuator beams is connected to the islands and is released from the substrate and therefore is also electrically isolated from the substrate. The IC sensor/actuator is manufactured by forming deep trenches in a substrate. These trenches preferably surrounding substrate material on three sides and the bottom, thus creating "islands" of substrate material surrounded by trenches and leaving one side of the island uncovered by the trench; lining the trenches with electrically insulating material, such as an oxide, thus surrounding the substrate material island with an electrical insulator; forming sensor/actuator beams in the substrate material such that the beams contact the uncovered portion of the islands; and using release etching, isolating the sensor/actuator beams from the substrate. The island/beam structure may be connected to a CMOS or other IC structure using conventional metalization processes.

Abstract translation: 描述了用于制造集成电路传感器/致动器的新颖方法。 通过在衬底中形成深沟槽并用氧化物衬套沟槽来产生硅岛。 这形成了基本上被隔离氧化物包围的硅岛。 传感器/致动器光束的锚固部分连接到岛上并从衬底释放，因此也与衬底电隔离。 通过在衬底中形成深沟槽来制造IC传感器/致动器。 这些沟槽优选地围绕三面和底部的衬底材料，由此产生由沟槽围绕的衬底材料的“岛”，并且使岛的一侧未被沟槽覆盖; 用电绝缘材料（例如氧化物）衬套沟槽，由此用电绝缘体围绕衬底材料岛; 在基底材料中形成传感器/致动器光束，使得光束接触岛的未覆盖部分; 并使用释放蚀刻，将传感器/致动器光束与衬底隔离。 岛/光束结构可以使用传统的金属化工艺连接到CMOS或其他IC结构。