Abstract:
A cartridge assembly for connection to a frame of a high temperature, high pressure press, having an anvil at a front end of a cylindrical body of the cartridge and a hydraulic chamber within the body adapted to apply axial pressure to the anvil. A radial compression element is disposed around an outer diameter of the body and is adapted to limit radial expansion of the body proximate the hydraulic chamber.
Abstract:
Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.
Abstract:
Diamond clusters are used as a polishing material of free abrading particles, each being a combination of artificial diamond particles having primary particle diameters of 20 nm or less and impurities that are attached around these diamond particles. The density of non-diamond carbon contained in the impurities is in the range of 95% or more and 99% or less, and the density of chlorine contained in other than non-diamond carbon in the impurities is 0.5% or more and preferably 3.5% or less. The diameters of these diamond clusters are in the range of 30 nm or more and 500 nm or less, and their average diameter is in the range of 30 nm or more and 200 nm or less. Such polishing material is produced first by an explosion shock method to obtain diamond clusters and then removing the impurities such that density of non-diamond carbon contained in the impurities and density of chlorine contained in other than non-diamond carbon in the impurities become adjusted.
Abstract:
The present invention relates to a method for producing colorless, single-crystal diamonds at a rapid growth rate. The method for diamond production includes controlling temperature of a growth surface of the diamond such that all temperature gradients across the growth surface of the diamond are less than about 20° C., and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface of a diamond at a growth temperature in a deposition chamber having an atmosphere, wherein the atmosphere comprises from about 8% to about 20% CH4 per unit of H2 and from about 5 to about 25% O2 per unit of CH4. The method of the invention can produce diamonds larger than 10 carats. Growth rates using the method of the invention can be greater than 50 μm/hour.
Abstract:
A layer of single crystal CVD diamond of high quality having a thickness greater than 2 mm. Also provided is a method of producing such a CVD diamond layer.
Abstract:
Methods of synthesizing polycrystalline bodies using rhombohedral graphite materials are disclosed and described. One procedure includes providing a particulate graphite source having a majority of carbon atoms oriented in a rhombohedral polytype configuration. The particulate graphite source can be shaped into a desired shape having a porosity from about 0% to about 30%. A sufficient amount of heat and pressure can be applied to the desired shape to form diamond and consolidate the diamond into a polycrystalline body.
Abstract:
Carbon components contained in large quantities in bone components are isolated. The isolated carbon components are gasified and plasma-processed by means of microwave or high-frequency heating and the etching curing of hydrogen atoms is utilized to form diamond-like film on the surface of the base material to produce an esthetically pleasing ornament.
Abstract:
A single crystal diamond grown by microwave plasma chemical vapor deposition annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C. that has a hardness of greater than 120 GPa. A method for manufacture a hard single crystal diamond includes growing a single crystal diamond and annealing the single crystal diamond at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa.
Abstract:
Disclosed in this specification is a process and apparatus for producing a diamond substance. A first mixture comprised of oxygen and a hydrocarbon gas is formed in the first inner nozzle. The first mixture is ignited to produce a flame core. A second mixture comprised of hydrogen and oxygen is formed in an outer nozzle; the second mixture is ignited to produce a flame sheath. The flame sheath is disposed around the flame core so that the flame sheath surrounds the flame core and shields the flame core from the ambient atmosphere; thereby producing a composite flame; and the composite flame is contacted with a substrate.
Abstract:
A method for making alloy materials for use in the manufacture of synthetic diamonds, in which the alloy materials are manufactured chemically using a wet chemical method.