-
公开(公告)号:US20230409499A1
公开(公告)日:2023-12-21
申请号:US18138667
申请日:2023-04-24
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Holden Jessup
IPC: G06F13/16
CPC classification number: G06F13/1689
Abstract: The described embodiments provide a system for controlling an integrated circuit memory device by a memory controller. During operation, the system sends a memory-access request from the memory controller to the memory device using a first link. After sending the memory-access request, the memory controller sends to the memory device a command that specifies performing a timing-calibration operation for a second link. The system subsequently transfers data associated with the memory-access request using the second link, wherein the timing-calibration operation occurs between sending the memory-access request and transferring the data associated with the memory-access request.
-
公开(公告)号:US20230409072A1
公开(公告)日:2023-12-21
申请号:US18206867
申请日:2023-06-07
Applicant: Rambus Inc.
Inventor: Jun Kim , Pak Shing Chau , Wayne S. Richardson
CPC classification number: G06F1/08 , H03L7/0995 , H04L7/0008 , H03L7/0814 , H04L7/0033 , H03L7/07 , H04L7/10 , G06F13/1689 , G06F1/10 , G06F13/1673 , Y02D10/00
Abstract: A memory system in which a timing drift that would occur in distribution of a first timing signal for data transport in a memory device is determined by measuring the actual phase delays occurring in a second timing signal that has a frequency lower than that of the first timing signal and is distributed in one or more circuits mimicking the drift characteristics of at least a portion of distribution of the first timing signal. The actual phase delays are determined in the memory device and provided to a memory controller so that the phases of the timing signals used for data transport may be adjusted based on the determined timing drift.
-
公开(公告)号:US20230388028A1
公开(公告)日:2023-11-30
申请号:US18138087
申请日:2023-04-23
Applicant: Rambus Inc.
Inventor: Craig E. Hampel , Frederick A. Ware , Richard E. Perego
CPC classification number: H04B17/11 , H04L7/0004 , H04L7/043 , H04L7/10 , H04L27/00 , H04B17/21 , H04L7/0016 , H04L7/0087 , H04B17/00
Abstract: A method and system that provides for execution of a first calibration sequence, such as upon initialization of a system, to establish an operation value, which utilizes an algorithm intended to be exhaustive, and executing a second calibration sequence from time to time, to measure drift in the parameter, and to update the operation value in response to the measured drift. The second calibration sequence utilizes less resources of the communication channel than does the first calibration sequence. In one embodiment, the first calibration sequence for measurement and convergence on the operation value utilizes long calibration patterns, such as codes that are greater than 30 bytes, or pseudorandom bit sequences having lengths of 2N−1 bits, where N is equal to or greater than 7, while the second calibration sequence utilizes short calibration patterns, such as fixed codes less than 16 bytes, and for example as short as 2 bytes long.
-
公开(公告)号:US20230377632A1
公开(公告)日:2023-11-23
申请号:US18203511
申请日:2023-05-30
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , John Eric Linstadt , Kenneth L. Wright
IPC: G11C11/4093 , G11C11/4096 , G06F11/10 , G11C7/02 , G11C29/52
CPC classification number: G11C11/4093 , G11C11/4096 , G06F11/1048 , G11C7/02 , G11C29/52 , G11C2029/0411
Abstract: Described are memory modules that support different error detection and correction (EDC) schemes in both single- and multiple-module memory systems. The memory modules are width configurable and support the different EDC schemes for relatively wide and narrow module data widths. Data buffers on the modules support the half-width and full-width modes, and also support time-division-multiplexing to access additional memory components on each module in support of enhanced EDC.
-
85.
公开(公告)号:US20230376067A1
公开(公告)日:2023-11-23
申请号:US18320384
申请日:2023-05-19
Applicant: Rambus Inc.
Inventor: Robert WANG , Zhuobin LI , Navid YAGHINI , Hemesh YASOTHARAN , Clifford TING
Abstract: A circuit and method are provided for setting a phase relationship between a first signal and a second signal having a known frequency relationship to a master signal but having an unknown phase relationship to each other. One or more phase signals is generated based on the master signal, the phase signals having different phases from each other. One of these phase signals is selected based on the phase of the first signal and a target phase delay between the first signal and second signal. The second signal is generated based on the phase and frequency of the selected phase signal.
-
公开(公告)号:US20230360695A1
公开(公告)日:2023-11-09
申请号:US18203591
申请日:2023-05-30
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , James E. Harris
IPC: G11C11/4093 , G11C5/04 , G11C5/06 , G11C8/12 , G11C7/22
CPC classification number: G11C11/4093 , G11C5/04 , G11C5/063 , G11C8/12 , G11C7/22
Abstract: A memory module with multiple memory devices includes a buffer system that manages communication between a memory controller and the memory devices. Each memory device supports an access mode and a low-power mode, the latter used to save power for devices that are not immediately needed. The module provides granular power management using a chip-select decoder that decodes chip-select signals from the memory controller into power-state signals that determine which of the memory devices are in which of the modes. Devices can thus be brought out of the low-power mode in relatively small numbers, as needed, to limit power consumption.
-
公开(公告)号:US11809712B2
公开(公告)日:2023-11-07
申请号:US17586575
申请日:2022-01-27
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Ely Tsern
CPC classification number: G06F3/0611 , G06F3/0619 , G06F3/0634 , G06F3/0659 , G06F3/0673 , G06F12/0607 , G11C5/04 , G11C7/10
Abstract: Memory modules, systems, memory controllers and associated methods are disclosed. In one embodiment, a memory module includes a module substrate having first and second memory devices. Buffer circuitry disposed on the substrate couples to the first and second memory devices via respective first and second secondary interfaces. The buffer circuitry includes a primary signaling interface for coupling to a group of signaling links associated with a memory controller. The primary signaling interface operates at a primary signaling rate and the first and second secondary data interfaces operate at a secondary signaling rate. During a first mode of operation, the primary interface signaling rate is at least twice the secondary signaling rate. A first time interval associated with a transfer of first column data via the first secondary interface temporally overlaps a second time interval involving second column data transferred via the second secondary interface.
-
公开(公告)号:US20230350835A1
公开(公告)日:2023-11-02
申请号:US18144349
申请日:2023-05-08
Applicant: Rambus Inc.
Inventor: Yuanlong WANG
IPC: G06F13/42 , G06F1/3206 , G06F1/3234 , G06F1/3237
CPC classification number: G06F13/4243 , G06F1/3206 , G06F1/3275 , G06F1/3237 , Y02D30/50 , Y02B70/10 , Y02D10/00
Abstract: The timing of the synchronous interface is controlled by a clock signal driven by a controller. The clock is toggled in order to send a command to a memory device via the interface. If there are no additional commands to be sent via the interface, the controller suspends the clock signal. When the memory device is ready, the memory device drives a signal back to the controller. The timing of this signal is not dependent upon the clock signal. Receipt of this signal by the controller indicates that the memory device is ready and the clock signal should be resumed so that a status of the command can be returned via the interface, or another command issued via the interface.
-
公开(公告)号:US11804259B2
公开(公告)日:2023-10-31
申请号:US17715370
申请日:2022-04-07
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , John Eric Linstadt , Zhichao Lu , Kenneth Lee Wright
IPC: G11C11/34 , G11C11/4091 , G06F11/10 , G11C11/4076
CPC classification number: G11C11/4091 , G06F11/10 , G06F11/1004 , G11C11/4076 , G11C2207/2263
Abstract: Memory devices, controllers and associated methods are disclosed. In one embodiment, a memory device is disclosed. The memory device includes storage cells that are each formed with a metal-oxide-semiconductor (MOS) transistor having a floating body. Data is stored as charge in the floating body. A transfer interface receives a read command to access data stored in a first group of the storage cells. Sensing circuitry detects the data stored in the first group of storage cells. The transfer interface selectively performs a writeback operation of the sensed data associated with the read command.
-
公开(公告)号:US11804250B2
公开(公告)日:2023-10-31
申请号:US17665760
申请日:2022-02-07
Applicant: Rambus Inc.
Inventor: James E. Harris , Thomas Vogelsang , Frederick A. Ware , Ian P. Shaeffer
IPC: G11C7/00 , G11C7/10 , G11C7/08 , G11C5/02 , G11C11/4076 , G11C11/408 , G11C11/4091 , G11C7/06 , G11C7/12 , G11C7/22 , G11C8/08 , G11C8/10
CPC classification number: G11C7/1039 , G11C5/025 , G11C7/06 , G11C7/065 , G11C7/08 , G11C7/12 , G11C7/222 , G11C8/08 , G11C8/10 , G11C11/4076 , G11C11/4087 , G11C11/4091
Abstract: Row activation operations within a memory component are carried out with respect to subrows instead of complete storage rows to reduce power consumption. Further, instead of activating subrows in response to row commands, subrow activation operations are deferred until receipt of column commands that specify the column operation to be performed and the subrow to be activated.
-
-
-
-
-
-
-
-
-