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    ETCHING APPARATUS
    82.
    发明申请
    ETCHING APPARATUS 审中-公开

    公开(公告)号：US20190393053A1

    公开(公告)日：2019-12-26

    申请号：US16441579

    申请日：2019-06-14

    Applicant: Applied Materials, Inc.

    Inventor： Yang YANG ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Steven LANE ,  Gonzalo MONROY ,  Lucy Zhiping CHEN ,  Yue GUO

    IPC: H01L21/67 ,  H01L21/311 ,  C23C16/517 ,  C23C16/02

    Abstract: Embodiments described herein relate to apparatus for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, an electrode is movably disposed within a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to a pedestal opposing the electrode. In another embodiment, a pedestal is movably disposed with a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to an electrode opposing the pedestal. Electrons emitted from the electrode are accelerated toward a substrate disposed on the pedestal to induce etching of the substrate.

    DISTRIBUTED ELECTRODE ARRAY FOR PLASMA PROCESSING
    84.
    发明申请
    DISTRIBUTED ELECTRODE ARRAY FOR PLASMA PROCESSING 审中-公开

    公开(公告)号：US20190057841A1

    公开(公告)日：2019-02-21

    申请号：US16107855

    申请日：2018-08-21

    Applicant: Applied Materials, Inc.

    Inventor： Kenneth S. COLLINS ,  Michael R. RICE ,  Kartik RAMASWAMY ,  James D. CARDUCCI ,  Yue GUO ,  Olga REGELMAN

    IPC: H01J37/32

    CPC classification number: H01J37/32174 ,  H01J37/3211 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32568

    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.

    IN-SITU SEMICONDUCTOR PROCESSING CHAMBER TEMPERATURE APPARATUS
    85.
    发明申请
    IN-SITU SEMICONDUCTOR PROCESSING CHAMBER TEMPERATURE APPARATUS 审中-公开

    公开(公告)号：US20180366354A1

    公开(公告)日：2018-12-20

    申请号：US15964296

    申请日：2018-04-27

    Applicant: Applied Materials, Inc.

    Inventor： Andrew NGUYEN ,  Yogananda SARODE ,  Xue CHANG ,  Kartik RAMASWAMY

    IPC: H01L21/67 ,  H01L35/30

    Abstract: In one implementation, a showerhead assembly is provided. The showerhead assembly comprises a first electrode having a plurality of openings therethrough and a gas distribution faceplate attached to a first lower major surface of the electrode. The gas distribution plate includes a plurality of through-holes for delivering process gases to a processing chamber. The gas distribution plate is divided into a plurality of temperature-control regions. The showerhead assembly further comprises a chill plate positioned above the electrode for providing temperature control and a plurality of heat control devices to manage heat transfer within the showerhead assembly. The heat control device comprises a thermoelectric module and a heat pipe assembly coupled with the thermoelectric module. Each of the plurality of heat control devices is associated with a temperature control region and provides independent temperature control to its associated temperature control region.

    Inductively Coupled Plasma Source with Radial Coil Network
    88.
    发明申请
    Inductively Coupled Plasma Source with Radial Coil Network 有权

    公开(公告)号：US20250157791A1

    公开(公告)日：2025-05-15

    申请号：US18388821

    申请日：2023-11-11

    Applicant: Applied Materials, Inc.

    Inventor： Yuhui ZHANG ,  Yang YANG ,  Zhimin JIANG ,  Kartik RAMASWAMY ,  Alok RANJAN

    IPC: H01J37/32 ,  H01L21/3065

    Abstract: An apparatus for generating plasma inductively in a process chamber leverages a radial coil network. In some embodiments, the radial coil network is a planar structure comprising an inner conductor with an open center where at least one RF power source is electrically connected to the inner conductor at a power node, an outer conductor spaced away from and surrounding the inner conductor where at least one ground is electrically connected to the outer conductor at a ground node, a plurality of branch conductors extending from the inner conductor to the outer conductor where the plurality of branch conductors is distributed uniformly in the radial coil network, and a plurality of capacitors where at least one capacitor of the plurality of capacitors is electrically interposed into each branch conductor of the plurality of branch conductors.

    Bowed Substrate Clamping Method, Apparatus, and System
    89.
    发明申请
    Bowed Substrate Clamping Method, Apparatus, and System 有权

    公开(公告)号：US20250149361A1

    公开(公告)日：2025-05-08

    申请号：US19013048

    申请日：2025-01-08

    Applicant: Applied Materials, Inc.

    Inventor： Arvinder S. CHADHA ,  Kartik RAMASWAMY

    IPC: H01L21/67 ,  H01J37/32 ,  H01L21/683

    Abstract: Methods and apparatus for clamping a substrate comprise i. placing a substrate on a clamping surface of a substrate support having a plurality of electrodes spaced from one another including a first electrode and a second electrode; ii. measuring substrate bow of the substrate; iii. determining, based on the measured substrate bow, a first voltage to be applied to the first electrode and a second voltage to be applied to the second electrode, wherein the first voltage is an AC voltage and the second voltage is an AC or a DC voltage; and iv. applying the first voltage to the first electrode and the second voltage to the second electrode to clamp the substrate to the substrate support.

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