公开(公告)号：US20250112076A1

公开(公告)日：2025-04-03

申请号：US18979512

申请日：2024-12-12

Applicant: Applied Materials, Inc.

Inventor： Michael R. RICE ,  Vijay D. PARKHE

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/67

Abstract: Disclosed herein is a substrate support assembly having a ground electrode mesh disposed therein along a side surface of the substrate support assembly. The substrate support assembly has a body. The body has an outer top surface, an outer side surface and an outer bottom surface enclosing an interior of the body. The body has a ground electrode mesh disposed in the interior of the body and adjacent the outer side surface, wherein the ground electrode does not extend through to the outer top surface or the outer side surface.

公开(公告)号：US20230023764A1

公开(公告)日：2023-01-26

申请号：US17786520

申请日：2020-12-15

Applicant: APPLIED MATERIALS, INC.

Inventor： David W. GROECHEL ,  Michael R. RICE ,  Gang Grant PENG ,  Rui CHENG ,  Zubin HUANG ,  Han WANG ,  Karthik JANAKIRAMAN ,  Diwakar KEDLAYA ,  Paul L. BRILLHART ,  Abdul Aziz KHAJA

IPC: H01L21/285 ,  H01L21/67

Abstract: Methods and apparatus for surface profiling and texturing of chamber components for use in a process chamber, such surface-profiled or textured chamber components, and method of use of same are provided herein. In some embodiments, a method includes measuring a parameter of a reference substrate or a heated pedestal using one or more sensors and modifying a surface of a chamber component physically based on the measured parameter.

公开(公告)号：US20190057841A1

公开(公告)日：2019-02-21

申请号：US16107855

申请日：2018-08-21

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. COLLINS ,  Michael R. RICE ,  Kartik RAMASWAMY ,  James D. CARDUCCI ,  Yue GUO ,  Olga REGELMAN

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/3211 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32568

Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.

公开(公告)号：US20170365443A1

公开(公告)日：2017-12-21

申请号：US15414379

申请日：2017-01-24

Applicant: Applied Materials, Inc.

Inventor： James D. CARDUCCI ,  Kenneth S. COLLINS ,  Kartik RAMASWAMY ,  Michael R. RICE ,  Richard Charles FOVELL ,  Vijay D. PARKHE

IPC: H01J37/32

CPC classification number: H01J37/32009 ,  H01J37/3244 ,  H01J37/3255 ,  H01J2237/334

Abstract: A gas distribution plate assembly for a processing chamber is provided that in one embodiment includes a body made of a metallic material, a base plate comprising a silicon infiltrated metal matrix composite coupled to the body, and a perforated faceplate comprising a silicon disk coupled to the base plate by a bond layer.

公开(公告)号：US20240429088A1

公开(公告)日：2024-12-26

申请号：US18823303

申请日：2024-09-03

Applicant: Applied Materials, Inc.

Inventor： Michael R. RICE ,  Yogananda SARODE VISHWANATH ,  Sunil SRINIVASAN ,  Rajinder DHINDSA ,  Steven E. BABAYAN ,  Olivier LUERE ,  Denis Martin KOOSAU ,  Imad YOUSIF

IPC: H01L21/687 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: Apparatuses including a height-adjustable edge ring, and methods for use thereof are described herein. In one example, a process kit for processing a substrate is provided. The process kit has a support ring comprising an upper surface having an inner edge disposed at a first height and an outward edge disposed at a second height less than the first height, the inner edge having a greater thickness than the outward edge. An edge ring is disposed on the support ring, an inner surface of the edge ring interfaced with the inner edge of the support ring. A cover ring is disposed outward of the edge ring, the edge ring independently moveable relative to the support ring and the cover ring. Push pins are disposed inward of the cover ring, the push pins operable to elevate the edge ring while constraining radial movement of the support ring.

公开(公告)号：US20240337020A1

公开(公告)日：2024-10-10

申请号：US18747687

申请日：2024-06-19

Applicant: Applied Materials, Inc.

Inventor： Tetsuya ISHIKAWA ,  Swaminathan T. SRINIVASAN ,  Matthias BAUER ,  Ala MORADIAN ,  Manjunath SUBBANNA ,  Kartik Bhupendra SHAH ,  Errol Antonio C. SANCHEZ ,  Sohrab ZOKAEI ,  Michael R. RICE ,  Peter REIMER

IPC: C23C16/455 ,  B01J4/00 ,  C23C16/44

CPC classification number: C23C16/4558 ,  B01J4/005 ,  B01J4/008 ,  C23C16/4412 ,  C23C16/45587

Abstract: The present disclosure generally relates to gas inject apparatus for a process chamber for processing of semiconductor substrates. The gas inject apparatus include one or more gas injectors which are configured to be coupled to the process chamber. Each of the gas injectors are configured to receive a process gas and distribute the process gas across one or more gas outlets. The gas injectors include a plurality of pathways, a fin array, and a baffle array. The gas injectors are individually heated. A gas mixture assembly is also utilized to control the concentration of process gases flown into a process volume from each of the gas injectors. The gas mixture assembly enables the concentration as well as the flow rate of the process gases to be controlled.

公开(公告)号：US20240254655A1

公开(公告)日：2024-08-01

申请号：US18140207

申请日：2023-04-27

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Tao SHENG ,  Errol Antonio C. SANCHEZ ,  Michael R. RICE ,  Nimrod SMITH ,  Ashur J. ATANOS

IPC: C30B25/14 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C30B25/10

CPC classification number: C30B25/14 ,  C23C16/4408 ,  C23C16/45502 ,  C23C16/46 ,  C30B25/10

Abstract: A method and apparatus for processing substrates suitable for use in semiconductor manufacturing. The method includes heating a substrate positioned on a substrate support. The method includes flowing a purge gas over an isolation plate disposed above the substrate, the flowing the purge gas including diverting a portion of the purge gas below the isolation plate through a plurality of perforations in the isolation plate. The method includes flowing one or more process gases over the substrate to deposit a material on the substrate, the flowing of the one or more process gases over the substrate comprising guiding the one or more process gases through one or more flow paths defined at least in part by a space between the isolation plate and the substrate.

公开(公告)号：US20230268218A1

公开(公告)日：2023-08-24

申请号：US18141223

申请日：2023-04-28

Applicant: Applied Materials, Inc.

Inventor： Michael R. RICE ,  Vijay D. PARKHE

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01L21/67103 ,  H01J37/32724 ,  H01J2237/002 ,  H01J2237/3321

Abstract: Disclosed herein is a substrate support assembly having a ground electrode mesh disposed therein along a side surface of the substrate support assembly. The substrate support assembly has a body. The body has an outer top surface, an outer side surface and an outer bottom surface enclosing an interior of the body. The body has a ground electrode mesh disposed in the interior of the body and adjacent the outer side surface, wherein the ground electrode does not extend through to the outer top surface or the outer side surface.

公开(公告)号：US20220364261A1

公开(公告)日：2022-11-17

申请号：US17317363

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Tetsuya ISHIKAWA ,  Swaminathan T. SRINIVASAN ,  Kartik Bhupendra SHAH ,  Ala MORADIAN ,  Manjunath SUBBANNA ,  Matthias BAUER ,  Peter REIMER ,  Michael R. RICE

IPC: C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C30B25/10 ,  C23C16/458 ,  C23C16/46 ,  C23C16/455

Abstract: The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a substrate support, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. Each of the upper lamp assembly and the lower lamp assembly include vertically oriented lamp apertures for the placement of heating lamps therein. The inject ring includes gas injectors disposed therethrough and the base ring includes a substrate transfer passage, a lower chamber exhaust passage, and one or more upper chamber exhaust passages. The gas injectors are disposed over the substrate transfer passage and across from the lower chamber exhaust passage and the one or more upper chamber exhaust passages.

公开(公告)号：US20230197495A1

公开(公告)日：2023-06-22

申请号：US17553305

申请日：2021-12-16

Applicant: Applied Materials, Inc.

Inventor： James David CARDUCCI ,  Kenneth S. COLLINS ,  Michael R. RICE ,  Kartik RAMASWAMY ,  Silverst Antony RODRIGUES ,  Yang YANG

IPC: H01L21/683 ,  H01L21/687 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01L21/68742 ,  H01L21/68735 ,  H01J37/32724 ,  H01J37/32642 ,  H01J37/32834 ,  H01J2237/334

Abstract: Embodiments of substrate supports for use in substrate processing chambers are provided herein. In some embodiments, a substrate support for use in a substrate processing chamber includes: a pedestal having a first side configured to support a substrate and a second side opposite the first side; a plurality of substrate lift pins extending through the pedestal, wherein a plurality of first gaps are disposed between the plurality of substrate lift pins and respective ones of a plurality of substrate lift pin openings in the pedestal; and vacuum lines that extend from the plurality of substrate lift pin openings and that are configured to pump down the plurality of substrate lift pin openings.