公开(公告)号：US08149060B2

公开(公告)日：2012-04-03

申请号：US12933509

申请日：2008-03-25

Applicant: Kazuhisa Yamauchi ,  Hifumi Noto ,  Akira Inoue ,  Tomokazu Hamada ,  Masatoshi Nakayama ,  Kenichi Horiguchi

Inventor： Kazuhisa Yamauchi ,  Hifumi Noto ,  Akira Inoue ,  Tomokazu Hamada ,  Masatoshi Nakayama ,  Kenichi Horiguchi

IPC: H03F3/68

CPC classification number: H03F3/195 ,  H03F1/0288 ,  H03F1/3205 ,  H03F1/565 ,  H03F3/601 ,  H03F2200/387 ,  H03F2200/451

Abstract: Provided is a low distortion amplifier which can satisfy both securement of a setting space in a vicinity of a transistor and low impedance. The low distortion amplifier includes a short stub having a leading end thereof short-circuited with a high-frequency short-circuit element and a low-frequency short-circuit element, in which the short stub is connected to a vicinity of at least one of a gate terminal and a drain terminal of the transistor, and includes a plurality of branched lines, the plurality of branched lines each having a leading end thereof short-circuited with the high-frequency short-circuit element and the low-frequency short-circuit element.

Abstract translation: 提供了能够满足晶体管附近的设定空间的固定和低阻抗的低失真放大器。 低失真放大器包括其短端与高频短路元件和低频短路元件短路的短路短路短路短路元件，短路短路元件连接到至少一个 晶体管的栅极端子和漏极端子，并且包括多条分支线路，所述多条分支线路的前端与高频短路元件和低频短路元件短路 元件。

公开(公告)号：US20120070758A1

公开(公告)日：2012-03-22

申请号：US13375348

申请日：2010-06-22

Applicant: Masato Odashima ,  Keisuke Satou ,  Takatada Usami ,  Kentaro Kono ,  Akinobu Moriyama ,  Masahiro Haruyama ,  Akira Inoue

Inventor： Masato Odashima ,  Keisuke Satou ,  Takatada Usami ,  Kentaro Kono ,  Akinobu Moriyama ,  Masahiro Haruyama ,  Akira Inoue

IPC: H01M8/04

CPC classification number: B60L11/1887 ,  H01M8/04089 ,  H01M8/04201 ,  H01M8/0438 ,  H01M8/04388 ,  H01M8/04753 ,  H01M8/04992 ,  H01M2250/20 ,  Y02E60/50 ,  Y02T90/32 ,  Y02T90/34

Abstract: A fuel gas supply device for supplying fuel gas to a fuel cell stack includes a control valve provided in a fuel gas path connecting a fuel tank and the fuel cell stack, an upstream-side pressure sensor and a downstream-side pressure sensor for detecting an upstream-side pressure and a downstream-side pressure, and a programmable controller. The programmable controller calculates a required opening based on a target fuel gas pressure and the downstream-side pressure and calculates an opening time and a closing time based on the required opening and the upstream-side pressure, or calculates an opening time and a closing time based on the target fuel gas pressure and the downstream-side pressure and calculates a required opening based on the opening time and the upstream-side pressure, and controls the control valve using the calculated required opening, opening time and closing time.

Abstract translation: 用于向燃料电池堆供应燃料气体的燃料气体供给装置包括设置在连接燃料箱和燃料电池堆的燃料气体路径中的控制阀，上游侧压力传感器和下游侧压力传感器， 上游侧压力和下游侧压力，以及可编程控制器。 可编程控制器基于目标燃料气体压力和下游侧压力计算所需的开度，并且基于所需的开度和上游侧压力计算打开时间和关闭时间，或者计算打开时间和关闭时间 基于目标燃料气体压力和下游侧压力，并且基于打开时间和上游侧压力计算所需的开度，并且使用所计算的所需开度，打开时间和关闭时间来控制控制阀。

公开(公告)号：US20120021549A1

公开(公告)日：2012-01-26

申请号：US13260434

申请日：2010-03-24

Applicant: Masaki Fujikane ,  Akira Inoue ,  Ryou Kato ,  Toshiya Yokogawa

Inventor： Masaki Fujikane ,  Akira Inoue ,  Ryou Kato ,  Toshiya Yokogawa

IPC: H01L33/32 ,  H01L21/20

CPC classification number: H01L33/0075 ,  C30B25/20 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/16

Abstract: A nitride semiconductor layer formation method includes the steps of: (S1) placing a substrate in a reaction chamber, the substrate including a −r-plane nitride semiconductor crystal at least in an upper surface; (S2) increasing a temperature of the substrate by heating the substrate placed in the reaction chamber; and (S3) growing a nitride semiconductor layer on the substrate. In the temperature increasing step (S2), a nitrogen source gas and a Group III element source gas are supplied into the reaction chamber.

Abstract translation: 氮化物半导体层形成方法包括以下步骤：（S1）将基板放置在反应室中，所述基板至少在上表面包括-r面氮化物半导体晶体; （S2）通过加热放置在反应室中的基板来增加基板的温度; 和（S3）在衬底上生长氮化物半导体层。 在升温工序（S2）中，将氮源气体和III族元素源气体供给到反应室内。

公开(公告)号：US08098435B2

公开(公告)日：2012-01-17

申请号：US12756008

申请日：2010-04-07

Applicant: Yoshitomo Iyoda ,  Akira Inoue ,  Tomomi Sano ,  Michiko Takushima ,  Takayuki Shimazu

Inventor： Yoshitomo Iyoda ,  Akira Inoue ,  Tomomi Sano ,  Michiko Takushima ,  Takayuki Shimazu

IPC: G02B27/10 ,  G02B27/42 ,  G02B3/08

CPC classification number: G02B27/1086 ,  G02B26/10 ,  G02B27/104

Abstract: An optical combiner in which the number of parts used is lessened is made of a resin. The optical component comprises a first surface, a diffraction grating, and a second surface. The first surface is a surface providing first, second, and third lenses. The diffraction grating diffracts to a common optical path leading to the second surface light of the first wavelength incident on the first lens, light of the second wavelength incident on the second lens, and light of the third wavelength incident on the third lens. The second surface emits light incident thereon through the common optical path. The optical path from the first surface to the diffraction grating and the common optical path are constituted of the resin.

Abstract translation: 其中使用的部件数量减少的光学组合器由树脂制成。 光学部件包括第一表面，衍射光栅和第二表面。 第一表面是提供第一，第二和第三透镜的表面。 衍射光栅衍射到通向入射到第一透镜上的第一波长的第二表面光，入射在第二透镜上的第二波长的光和入射在第三透镜上的第三波长的光的公共光路。 第二表面通过公共光路发射入射到其上的光。 从第一表面到衍射光栅和公共光路的光路由树脂构成。

公开(公告)号：US20120006914A1

公开(公告)日：2012-01-12

申请号：US13237132

申请日：2011-09-20

Applicant: Harsha Badarinarayan ,  Akira Inoue ,  Takashi Yoshizawa ,  Atsushi Hohkita ,  Hiroaki Saeki ,  Hiroshi Ono ,  Masahiro Soma ,  William Harvey ,  Steven J. Miller ,  Su-Wei Sung

Inventor： Harsha Badarinarayan ,  Akira Inoue ,  Takashi Yoshizawa ,  Atsushi Hohkita ,  Hiroaki Saeki ,  Hiroshi Ono ,  Masahiro Soma ,  William Harvey ,  Steven J. Miller ,  Su-Wei Sung

IPC: F02M61/00

CPC classification number: F16L27/047 ,  F02M37/0017 ,  F02M55/005 ,  F02M55/02 ,  F02M55/04 ,  F02M2200/306 ,  F02M2200/8084 ,  F02M2200/9015

Abstract: A high pressure fuel pipe construction for an internal combustion engine, such as a direct injection engine. A conduit for the fuel is open at each end and a ball having a throughbore is slidably positioned over one end of the conduit. A reinforcing sleeve is positioned inside the end of the conduit so that the sleeve extends entirely through the ball. The sleeve, ball and the end of the conduit are then brazed together to attach the ball and conduit together. A double chamfer is provided at one end of the ball throughbore to facilitate inspection of the brazing quality. Additionally, a loop is formed in the conduit and a dampener is attached to the loop.

Abstract translation: 用于内燃机的高压燃料管构造，例如直喷式发动机。 用于燃料的导管在每个端部是开放的，并且具有通孔的球可滑动地定位在导管的一端上。 加强套管定位在导管的端部内部，使得套筒完全延伸穿过球。 然后将套筒，球和导管的端部钎焊在一起，将球和导管连接在一起。 在球透孔的一端设有双倒角，以便检查钎焊质量。 另外，在导管中形成环，并且阻尼器附接到环路。

公开(公告)号：US20120001223A1

公开(公告)日：2012-01-05

申请号：US13256061

申请日：2010-12-27

Applicant: Akira Inoue ,  Junko Iwanaga ,  Ryou Kato ,  Masaki Fujikane ,  Toshiya Yokogawa

Inventor： Akira Inoue ,  Junko Iwanaga ,  Ryou Kato ,  Masaki Fujikane ,  Toshiya Yokogawa

IPC: H01L33/32

CPC classification number: H01L33/14 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/13 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A nitride-based semiconductor light-emitting device 31 includes: an n-type GaN substrate 1 which has an m-plane principal surface; a current diffusing layer 7 provided on the n-type GaN substrate 1; an n-type nitride semiconductor layer 2 provided on the current diffusing layer 7; an active layer 3 provided on the n-type nitride semiconductor layer 2; a p-type nitride semiconductor layer 4 provided on the active layer 3; a p-electrode 5 which is in contact with the p-type nitride semiconductor layer 4; and an n-electrode 6 which is in contact with the n-type GaN substrate 1 or the n-type nitride semiconductor layer 2. The donor impurity concentration of the n-type nitride semiconductor layer 2 is not more than 5×1018 cm−3, and the donor impurity concentration of the current diffusing layer 7 is ten or more times the donor impurity concentration of the n-type nitride semiconductor layer 2.

Abstract translation: 氮化物系半导体发光元件31具备：具有m面主面的n型GaN衬底1， 设置在n型GaN衬底1上的电流扩散层7; 设置在电流扩散层7上的n型氮化物半导体层2; 设置在n型氮化物半导体层2上的有源层3; 设置在有源层3上的p型氮化物半导体层4; 与p型氮化物半导体层4接触的p电极5; 以及与n型GaN衬底1或n型氮化物半导体层2接触的n电极6.n型氮化物半导体层2的施主杂质浓度不大于5×1018cm- 3，电流扩散层7的施主杂质浓度为n型氮化物半导体层2的施主杂质浓度的十倍以上。

公开(公告)号：US20110140776A1

公开(公告)日：2011-06-16

申请号：US13058008

申请日：2009-11-04

Applicant: Kazuhisa Yamauchi ,  Hidenori Yukawa ,  Akira Inoue ,  Atsushi Yamamoto ,  Koichi Fujisaki ,  Hiroomi Ueda

Inventor： Kazuhisa Yamauchi ,  Hidenori Yukawa ,  Akira Inoue ,  Atsushi Yamamoto ,  Koichi Fujisaki ,  Hiroomi Ueda

IPC: H03F1/00 ,  H03G3/00

CPC classification number: H03F1/42 ,  H03F1/32 ,  H03F3/191 ,  H03F3/211 ,  H03F3/24 ,  H03F2200/192 ,  H03F2200/195 ,  H03F2200/198 ,  H03F2200/201 ,  H03F2200/204 ,  H03F2200/207

Abstract: A variable frequency amplifier includes a main amplifier system 4 for amplifying one of signals into which an input signal is split by a directional coupler 3 to output the amplified signal, and an injection amplifier system 9 for adjusting at least one of the amplitude and phase of the other one of the signals into which the input signal is split by the directional coupler 3 according to a setting provided thereto from outside the variable frequency amplifier, and for amplifying the other signal and injecting this amplified signal into an output side of the main amplifier system 4.

Abstract translation: 可变频放大器包括：主放大器系统4，用于放大由定向耦合器3输入信号被分离的信号之一以输出放大信号;以及注入放大器系统9，用于调节幅度和相位中的至少一个 根据从可变频放大器的外部提供的设置，由定向耦合器3将输入信号分离的信号中的另一个，并且用于放大另一信号并将该放大信号注入到主放大器的输出侧 系统4。

公开(公告)号：US20110012899A1

公开(公告)日：2011-01-20

申请号：US12921057

申请日：2009-03-27

Applicant: Akira Inoue ,  Shinichi Uehara ,  Kenichi Takatori

Inventor： Akira Inoue ,  Shinichi Uehara ,  Kenichi Takatori

IPC: G06T15/00

CPC classification number: H04N13/10 ,  G06T5/009 ,  G06T2207/10021 ,  G06T2207/10024 ,  G09G3/003 ,  G09G3/3611 ,  G09G2320/0247 ,  G09G2320/066 ,  G09G2320/0666 ,  G09G2320/0673 ,  H04N13/122 ,  H04N13/133 ,  H04N13/15 ,  H04N2213/006

Abstract: An image processing method, an image processing device and a program which can improve sharpness are provided. An image processing device 100 includes a right eye image processing unit 101 that outputs a right eye image displayed to a right eye, a left eye image processing unit 102 that outputs a left eye image displayed to a left eye, and a multi-eye image disparity unit that displays a right eye image and a left eye image to different viewpoint positions. The right eye image processing unit 101 and/or the left eye image processing unit 102 perform correction processing to an input image, and fluctuate at least one of amounts of correction of the right eye image and the left eye image with time.

Abstract translation: 提供了可以提高锐度的图像处理方法，图像处理装置和程序。 图像处理装置100包括输出向右眼显示的右眼图像的右眼图像处理部101，输出向左眼显示的左眼图像的左眼图像处理部102和多眼图像 视差单元，其将右眼图像和左眼图像显示到不同的视点位置。 右眼图像处理单元101和/或左眼图像处理单元102对输入图像执行校正处理，并随时间波动右眼图像和左眼图像的校正量中的至少一个。

公开(公告)号：US07800895B2

公开(公告)日：2010-09-21

申请号：US11854810

申请日：2007-09-13

Applicant: Akira Inoue ,  Sumio Otsuka ,  Norio Kobayashi ,  Toru Yamauchi

Inventor： Akira Inoue ,  Sumio Otsuka ,  Norio Kobayashi ,  Toru Yamauchi

IPC: H05K7/20

CPC classification number: G06F1/20 ,  G06F1/181

Abstract: An electronic apparatus includes a drive for recording/reproducing a recording medium, and a sound absorbing member having a Helmholtz resonator for insulating sounds at a predetermined frequency among sounds generated by the drive.

Abstract translation: 电子设备包括用于记录/再现记录介质的驱动器，以及具有亥姆霍兹共振器的吸声构件，用于在由驱动器产生的声音之间以预定频率隔离声音。

公开(公告)号：US20100182188A1

公开(公告)日：2010-07-22

申请号：US12438358

申请日：2007-08-23

Applicant: Toshio Kudo ,  Toshio Uchida ,  Akira Inoue ,  Kazuaki Yagi

Inventor： Toshio Kudo ,  Toshio Uchida ,  Akira Inoue ,  Kazuaki Yagi

IPC: H01Q17/00 ,  E04B1/92

CPC classification number: H05K9/009 ,  D04H1/587 ,  D04H1/64 ,  E04B2001/925 ,  Y10T428/23921

Abstract: In order to provide a radio wave absorber that can be produced easily and has excellent radio wave absorption characteristics, a conductive surface 2 of a conductive paint 6 is formed on one surface 1a of a mat-shaped inorganic fiber bulk material 1.

Abstract translation: 为了提供容易制造且具有优异的无线电波吸收特性的无线电波吸收体，导电涂料6的导电表面2形成在垫状无机纤维体材料1的一个表面1a上。