公开(公告)号：US5765280A

公开(公告)日：1998-06-16

申请号：US788939

申请日：1997-01-24

Applicant: Rajeev Joshi

Inventor： Rajeev Joshi

IPC: H01L21/48 ,  H01L23/13 ,  H01L23/31 ,  H01L23/498 ,  H05K3/00 ,  H05K3/40 ,  H05K3/34

CPC classification number: H01L24/97 ,  H01L21/486 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/49805 ,  H01L23/49838 ,  H01L24/49 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15311 ,  H01L2924/16195 ,  H01L2924/181 ,  H05K3/0097 ,  H05K3/403 ,  Y10T29/49144 ,  Y10T29/49789 ,  Y10T29/49799

Abstract: The present invention discloses the use of a dielectric substrate panel suitable for supporting a plurality of independently packaged ICs. The substrate panel has a plurality of conductive landings arranged on its top surface, a plurality of conductive contacts arranged on its bottom surface and a multiplicity of electrically conductive vias. The vias pass through the substrate panel and are arranged to interconnect selected landings with their associated conductive contacts. The top surface of the substrate panel also includes a number of die attach areas. During packaging, dies are secured to their associated die attach areas on the substrate panel and electrically coupled to appropriate conductive landings. An encapsulant is then formed over each of the dies for protection.

Abstract translation: 本发明公开了适用于支持多个独立封装的IC的电介质基板的使用。 衬底面板具有布置在其顶表面上的多个导电平台，布置在其底表面上的多个导电触头和多个导电通孔。 通孔穿过衬底面板并且布置成将选定的平台与其相关联的导电触点相互连接。 衬底面板的顶表面还包括多个管芯附接区域。 在包装期间，管芯被固定到其相关的管芯附着区域在基板面板上并且电耦合到适当的导电平台。 然后在每个模具上形成密封剂用于保护。

公开(公告)号：US08541890B2

公开(公告)日：2013-09-24

申请号：US11180367

申请日：2005-07-12

Applicant: Rajeev Joshi

Inventor： Rajeev Joshi

IPC: H01L21/44 ,  H01L23/48

CPC classification number: H01L23/49861 ,  H01L23/49562 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2224/45147

Abstract: A semiconductor die package is disclosed. In one embodiment, the semiconductor die package has a substrate. It includes (i) a lead frame structure including a die attach region with a die attach surface and a lead having a lead surface, and (ii) a molding material. The die attach surface and the lead surface are exposed through the molding material. A semiconductor die is on the die attach region, and the semiconductor die is electrically coupled to the lead.

公开(公告)号：US08339231B1

公开(公告)日：2012-12-25

申请号：US12729082

申请日：2010-03-22

Applicant: Rajeev Joshi

Inventor： Rajeev Joshi

IPC: H01F5/00 ,  H01F27/29 ,  H01F27/28

CPC classification number: H01F41/00 ,  H01F27/2804 ,  H01F27/29 ,  H01F2027/2809 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/00012

Abstract: A magnetics package comprising: a primary coil configured to conduct a current flow; a secondary coil electrically isolated from the primary coil and configured to conduct a current flow, wherein the secondary coil is embedded in a mold compound; and a magnetic core inductively coupling the primary coil and the secondary coil, wherein a current flow in the primary coil produces a magnetic field in the magnetic core, and the magnetic field in the magnetic core induces a current flow in the secondary coil.

Abstract translation: 一种磁性封装，包括：初级线圈，被配置为导通电流; 与所述初级线圈电隔离并且被配置为传导电流的次级线圈，其中所述次级线圈嵌入在模具化合物中; 以及感应耦合初级线圈和次级线圈的磁芯，其中初级线圈中的电流在磁芯中产生磁场，并且磁芯中的磁场在次级线圈中引起电流。

公开(公告)号：US07971350B2

公开(公告)日：2011-07-05

申请号：US12221256

申请日：2008-07-31

Applicant: Rajeev Joshi

Inventor： Rajeev Joshi

IPC: H05K3/30

CPC classification number: H05K9/0024 ,  H05K1/0218 ,  H05K3/284 ,  H05K3/4015 ,  H05K2201/10242 ,  H05K2203/041 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49146

Abstract: A shielding assembly is configured to provide electromagnetic shielding and environmental protection to one or more electronic components coupled to a substrate. The shielding assembly includes a non-conductive mold compound layer, such as a dielectric epoxy. The mold compound layer is applied to a top surface of the substrate, thereby covering the electronic components and providing protection against environmentally induced conditions such as corrosion, humidity, and mechanical stress. The shielding assembly also includes a conductive layer applied to a top surface of the mold compound layer. The conductive layer is coupled to a ground plane in the substrate, thereby enabling the electromagnetic shielding function. The conductive layer is coupled to the ground plane via one or more metallized contacts that are coupled to the substrate and extend through the mold compound layer.

Abstract translation: 屏蔽组件被配置为向耦合到衬底的一个或多个电子部件提供电磁屏蔽和环境保护。 屏蔽组件包括非导电模制化合物层，例如电介质环氧树脂。 模具化合物层被施加到基板的顶表面，从而覆盖电子部件并且提供防止诸如腐蚀，湿度和机械应力的环境诱发条件的保护。 屏蔽组件还包括施加到模具化合物层的顶表面的导电层。 导电层耦合到衬底中的接地平面，从而实现电磁屏蔽功能。 导电层通过一个或多个金属化触点耦合到接地平面，金属化触点耦合到衬底并延伸穿过模具化合物层。

公开(公告)号：US07892884B2

公开(公告)日：2011-02-22

申请号：US12407532

申请日：2009-03-19

Applicant: Rajeev Joshi

Inventor： Rajeev Joshi

IPC: H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC classification number: B23K1/0008 ,  B23K3/0623 ,  B23K2101/40 ,  H01L23/492 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure and method of manufacture for an improved multi-chip semiconductor package that reduces package resistance to a negligible level, and offers superior thermal performance. Housing of multiple dies is facilitated by providing electrically isolated lead frames that are separated from a common base carrier by a non-conductive layer of laminating material. A silicon die is attached inside a cavity formed in each lead frame. Direct connection of the active surface of the silicon die to the printed circuit board is then made by an array of solder bumps that is distributed across the surface of each die as well as the edges of the lead frame adjacent to each die.

Abstract translation: 一种用于改进的多芯片半导体封装的结构和方法，其将封装电阻降低到可忽略的水平，并提供优异的热性能。 通过提供电绝缘的引线框架来促进多个管芯的外壳，该引线框架通过层压材料的非导电层与共同的基底载体分开。 在每个引线框架中形成的腔内部附着有硅管芯。 然后通过分布在每个管芯的表面以及与每个管芯相邻的引线框架的边缘的焊料凸块的阵列来形成硅片的有源表面与印刷电路板的直接连接。

公开(公告)号：US07790513B2

公开(公告)日：2010-09-07

申请号：US12358654

申请日：2009-01-23

Applicant: Rajeev Joshi

Inventor： Rajeev Joshi

IPC: H01L21/00

CPC classification number: H01L23/49861 ,  H01L23/49562 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2224/45147

Abstract: A semiconductor die package is disclosed. In one embodiment, the semiconductor die package has a substrate. It includes (i) a lead frame structure including a die attach region with a die attach surface and a lead having a lead surface, and (ii) a molding material. The die attach surface and the lead surface are exposed through the molding material. A semiconductor die is on the die attach region, and the semiconductor die is electrically coupled to the lead.

Abstract translation: 公开了一种半导体管芯封装。 在一个实施例中，半导体管芯封装具有衬底。 它包括（i）引线框架结构，其包括具有管芯附接表面的管芯附接区域和具有引线表面的引线，以及（ii）模制材料。 裸片附着表面和引线表面通过模制材料暴露。 半导体管芯在管芯附着区域上，并且半导体管芯电耦合到引线。

公开(公告)号：US07618896B2

公开(公告)日：2009-11-17

申请号：US11410504

申请日：2006-04-24

Applicant: Rajeev Joshi ,  Venkat Iyer ,  Jonathan Klein

Inventor： Rajeev Joshi ,  Venkat Iyer ,  Jonathan Klein

IPC: H01L23/34

CPC classification number: H01L23/49575 ,  H01L23/492 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73253 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor die package capable of being mounted to a motherboard is disclosed. The semiconductor die package includes a substrate, and a first semiconductor die mounted on the substrate, where the first semiconductor die includes a first vertical device comprising a first input region and a first output region at opposite surfaces of the first semiconductor die. The semiconductor die package includes a second semiconductor die mounted on the substrate, where second semiconductor die comprises a second vertical device comprising a second input region and a second output region at opposite surfaces of the second semiconductor die. A substantially planar conductive node clip electrically communicates the first output region in the first semiconductor die and the second input region in the second semiconductor die. The first semiconductor die and the second semiconductor die are between the substrate and the conductive node clip.

Abstract translation: 公开了一种能够安装在母板上的半导体管芯封装。 半导体管芯封装包括衬底和安装在衬底上的第一半导体管芯，其中第一半导体管芯包括第一垂直器件，第一垂直器件包括第一半导体管芯的相对表面处的第一输入区域和第一输出区域。 半导体管芯封装包括安装在基板上的第二半导体管芯，其中第二半导体管芯包括第二垂直器件，该第二垂直器件包括在第二半导体管芯的相对表面处的第二输入区域和第二输出区域。 基本上平面的导电节点夹将第一半导体管芯中的第一输出区域和第二半导体管芯中的第二输入区域电连通。 第一半导体管芯和第二半导体管芯位于衬底和导电节点夹之间。

公开(公告)号：US20090230540A1

公开(公告)日：2009-09-17

申请号：US12407532

申请日：2009-03-19

Applicant: Rajeev Joshi

Inventor： Rajeev Joshi

IPC: H01L23/488 ,  H01L21/60

CPC classification number: B23K1/0008 ,  B23K3/0623 ,  B23K2101/40 ,  H01L23/492 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure and method of manufacture for an improved multi-chip semiconductor package that reduces package resistance to a negligible level, and offers superior thermal performance. Housing of multiple dies is facilitated by providing electrically isolated lead frames that are separated from a common base carrier by a non-conductive layer of laminating material. A silicon die is attached inside a cavity formed in each lead frame. Direct connection of the active surface of the silicon die to the printed circuit board is then made by an array of solder bumps that is distributed across the surface of each die as well as the edges of the lead frame adjacent to each die.

Abstract translation: 一种用于改进的多芯片半导体封装的结构和方法，其将封装电阻降低到可忽略的水平，并提供优异的热性能。 通过提供电绝缘的引线框架来促进多个管芯的外壳，该引线框架通过层压材料的非导电层与共同的基底载体分开。 在每个引线框架中形成的腔内部附着有硅管芯。 然后通过分布在每个管芯的表面以及与每个管芯相邻的引线框架的边缘的焊料凸块阵列来制造硅片的有源表面与印刷电路板的直接连接。

公开(公告)号：US07271497B2

公开(公告)日：2007-09-18

申请号：US10386211

申请日：2003-03-10

Applicant: Rajeev Joshi ,  Consuelo Tangpuz ,  Margie T. Rios ,  Erwin Victor R. Cruz

Inventor： Rajeev Joshi ,  Consuelo Tangpuz ,  Margie T. Rios ,  Erwin Victor R. Cruz

IPC: H01L23/52 ,  H01L23/48 ,  H01L29/40

CPC classification number: H01L24/81 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2224/29099 ,  H01L2924/00 ,  H01L2224/05655 ,  H01L2924/00014 ,  H01L2224/05666 ,  H01L2224/05124

Abstract: A method for forming a stud bumped semiconductor die is disclosed. The method includes forming a ball at the tip of a coated wire passing through a hole in a capillary, where the coated wire has a core and an oxidation-resistant coating. The formed ball is pressed to the conductive region on the semiconductor die. The coated wire is cut, thereby leaving a conductive stud bump on the conductive region, where the conductive stud bump includes an inner conductive portion and an outer oxidation-resistant layer.

Abstract translation: 公开了一种用于形成螺柱凸起的半导体管芯的方法。 该方法包括在穿过毛细管中的孔的涂覆线的尖端处形成球，其中涂覆线具有芯和抗氧化涂层。 将形成的球按压到半导体管芯上的导电区域。 涂覆的线材被切割，从而在导电区域上留下导电柱状凸块，其中导电柱形凸块包括内部导电部分和外部抗氧化层。

公开(公告)号：US20060189116A1

公开(公告)日：2006-08-24

申请号：US11404650

申请日：2006-04-14

Applicant: Rajeev Joshi ,  Consuelo Tangpuz ,  Margie Rios ,  Erwin Victor Cruz

Inventor： Rajeev Joshi ,  Consuelo Tangpuz ,  Margie Rios ,  Erwin Victor Cruz

IPC: H01L21/44

CPC classification number: H01L24/81 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2224/29099 ,  H01L2924/00 ,  H01L2224/05655 ,  H01L2924/00014 ,  H01L2224/05666 ,  H01L2224/05124

Abstract: A method for forming a stud bumped semiconductor die is disclosed. The method includes forming a ball at the tip of a coated wire passing through a hole in a capillary, where the coated wire has a core and an oxidation-resistant coating. The formed ball is pressed to the conductive region on the semiconductor die. The coated wire is cut, thereby leaving a conductive stud bump on the conductive region, where the conductive stud bump includes an inner conductive portion and an outer oxidation-resistant layer.