公开(公告)号：US20220310855A1

公开(公告)日：2022-09-29

申请号：US17841731

申请日：2022-06-16

Applicant: Japan Display Inc.

Inventor： Masashi TSUBUKU

IPC: H01L31/0216 ,  H01L31/0224

Abstract: The optical sensor includes a substrate, a first transistor for functioning as a light-receiving element and a second transistor for writing/reading in a pixel region provided on the substrate. The first transistor is formed by a transistor using polycrystalline silicon, the second transistor is formed by a transistor using an oxide semiconductor. A light-shielding layer is provided on the back side of the oxide semiconductor of the second transistor. Thus, it is possible to irradiate light to the optical sensor fora long time, and in addition to increasing the amount of light received by the first transistor, it is possible to suppress variations in the characteristics of the second transistor.

公开(公告)号：US20220231149A1

公开(公告)日：2022-07-21

申请号：US17575635

申请日：2022-01-14

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Kentaro MIURA ,  Hajime WATAKABE ,  Masashi TSUBUKU ,  Toshinari SASAKI ,  Takaya TAMARU ,  Takeshi SAKAI

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/40 ,  H01L21/3115

Abstract: According to one embodiment, a method of manufacturing a semiconductor device comprises forming an oxide semiconductor layer, forming a gate insulating layer in contact with the oxide semiconductor layer and covering the oxide semiconductor layer, and forming a gate electrode on the gate insulating layer so as to overlap the oxide semiconductor layer, and injecting boron through the gate electrode and the gate insulating layer after forming the gate electrode, wherein a boron concentration included in a region of the gate insulating layer overlapping the gate electrode is in a range of 1E+16 [atoms/cm3] or more.

公开(公告)号：US20220149203A1

公开(公告)日：2022-05-12

申请号：US17579740

申请日：2022-01-20

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Takuo KAITOH ,  Masashi TSUBUKU

IPC: H01L29/786

Abstract: The purpose of the present invention is to suppress a variation in a threshold voltage (Δ Vth) in a Thin Film Transistor (TFT) using an oxide semiconductor. The present invention takes a structure as follows to attain this purpose. A semiconductor device having TFT using an oxide semiconductor including: a channel region, a source region, a drain region, and a transition region between the channel region and the source region and between the channel region and the drain region, in which a resistivity of the transition region is smaller than that of the channel region, and larger than that of the source region or the drain region; a source electrode is formed overlapping the source region, and a drain electrode is formed overlapping the drain region; and a thickness of the transition region of the oxide semiconductor is larger than a thickness of the channel region of the oxide semiconductor.