公开(公告)号：US12210283B2

公开(公告)日：2025-01-28

申请号：US18321310

申请日：2023-05-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Chen-Yu Liu ,  Ching-Yu Chang

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  H01L21/027

Abstract: A photoresist includes a core group that contains metal, and one or more first ligands or one or more second ligands attached to the core group. The first ligands each have a following structure: The second ligands each have a following structure: {circle around (M)} represents the core group. L′ represents a chemical that includes 0-2 carbon atoms saturated by Hydrogen (H) or Fluorine (F). L represents a chemical that includes 1-6 carbon atoms saturated by H or F. L″ represents a chemical that includes 1-6 carbon atoms saturated by H. L″′ represents a chemical that includes 1-6 carbon atoms saturated by H or F. Linker represents a chemical that links L″ and L″′ together.

公开(公告)号：US20240377743A1

公开(公告)日：2024-11-14

申请号：US18780878

申请日：2024-07-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Chih Chen ,  Ching-Yu Chang

IPC: G03F7/09 ,  C09D5/00 ,  C09D165/00 ,  G03F7/038 ,  G03F7/039 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38

Abstract: A method according to the present disclosure includes providing a substrate, depositing an underlayer over the substrate, depositing a photoresist layer over the underlayer, exposing a portion of the photoresist layer and a portion of the underlayer to a radiation source according to a pattern, baking the photoresist layer and underlayer, and developing the exposed portion of the photoresist layer to transfer the pattern to the photoresist layer. The underlayer includes a polymer backbone, a polarity switchable group, a cross-linkable group bonded to the polymer backbone, and photoacid generator. The polarity switchable group includes a first end group bonded to the polymer backbone, a second end group including fluorine, and an acid labile group bonded between the first end group and the second end group. The exposing decomposes the photoacid generator to generate an acidity moiety that detaches the second end group from the polymer backbone during the baking.

公开(公告)号：US20240377731A1

公开(公告)日：2024-11-14

申请号：US18779265

申请日：2024-07-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/004 ,  G03F7/30 ,  G03F7/32 ,  G03F7/36

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a metal-containing chemical; performing an exposing process to the photoresist layer; and performing a first developing process to the photoresist layer using a first developer, thereby forming a patterned resist layer, wherein the first developer includes a first solvent and a chemical additive to remove metal residuals generated from the metal-containing chemical.

公开(公告)号：US12050404B2

公开(公告)日：2024-07-30

申请号：US18447441

申请日：2023-08-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Ching-Yu Chang

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/038 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38

CPC classification number: G03F7/0397 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/20 ,  G03F7/325 ,  G03F7/38

Abstract: Methods and materials for making a semiconductor device are described. The method includes forming a photoresist over a substrate. The photoresist includes an acid-labile group (ALG) connected to a polar unit. The method also includes exposing the photoresist to a radiation beam, baking the photoresist and performing a developing process to the photoresist.

公开(公告)号：US20240249942A1

公开(公告)日：2024-07-25

申请号：US18595554

申请日：2024-03-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Yu Chang ,  Jung-Hau Shiu ,  Jen Hung Wang ,  Tze-Liang Lee

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/0331 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32133 ,  H01L21/32139

Abstract: A method for manufacturing an integrated circuit includes patterning a plurality of photomask layers over a substrate, partially backfilling the patterned plurality of photomask layers with a first material using atomic layer deposition, completely backfilling the patterned plurality of photomask layers with a second material using atomic layer deposition, removing the plurality of photomask layers to form a masking structure comprising at least one of the first and second materials, and transferring a pattern formed by the masking structure to the substrate and removing the masking structure. The first material includes a silicon dioxide, silicon carbide, or carbon material, and the second material includes a metal oxide or metal nitride material.

公开(公告)号：US12019375B2

公开(公告)日：2024-06-25

申请号：US16707448

申请日：2019-12-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Ching-Yu Chang ,  Chien-Wei Wang

IPC: G03F7/20 ,  G03F7/004 ,  G03F7/09 ,  G03F7/11 ,  G03F7/16 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/20 ,  G03F7/0042 ,  G03F7/091 ,  G03F7/11 ,  G03F7/16 ,  G03F7/168 ,  G03F7/32 ,  H01L21/0271

Abstract: Materials directed to a photosensitive material and a method of performing a lithography process using the photosensitive material are described. A semiconductor substrate is provided. A first layer including a floating additive is formed over the semiconductor substrate. A second layer including an additive component having a metal cation is formed over the first layer. One or more bonds are formed to bond the metal cation and one or more anions. Each of the one or more anions is one of a protecting group and a polymer chain bonding component. The polymer chain bonding component is bonded to a polymer chain of the layer. The second layer is exposed to a radiation beam.

公开(公告)号：US12002710B2

公开(公告)日：2024-06-04

申请号：US16924200

申请日：2020-07-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hsin Chan ,  Jiing-Feng Yang ,  Kuan-Wei Huang ,  Meng-Shu Lin ,  Yu-Yu Chen ,  Chia-Wei Wu ,  Chang-Wen Chen ,  Wei-Hao Lin ,  Ching-Yu Chang

IPC: H01L21/768 ,  H01L21/033 ,  H01L21/311 ,  H01L23/528

CPC classification number: H01L21/76816 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/7684 ,  H01L21/76877 ,  H01L23/528

Abstract: A semiconductor structure and method of forming the same are provided. The method includes: forming a plurality of mandrel patterns over a dielectric layer; forming a first spacer and a second spacer on sidewalls of the plurality of mandrel patterns, wherein a first width of the first spacer is larger than a second width of the second spacer; removing the plurality of mandrel patterns; patterning the dielectric layer using the first spacer and the second spacer as a patterning mask; and forming conductive lines laterally aside the dielectric layer.

公开(公告)号：US11955336B2

公开(公告)日：2024-04-09

申请号：US17238458

申请日：2021-04-23

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jing Hong Huang ,  Wei-Han Lai ,  Ching-Yu Chang

IPC: H01L21/027 ,  G03F7/16 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/8238

CPC classification number: H01L21/0276 ,  G03F7/162 ,  G03F7/168 ,  H01L21/32139 ,  H01L21/76802 ,  H01L21/823842 ,  H01L21/0332 ,  H01L21/31138

Abstract: Method of manufacturing a semiconductor device, includes forming a protective layer over substrate having a plurality of protrusions and recesses. The protective layer includes polymer composition including polymer having repeating units of one or more of:




Wherein a, b, c, d, e, f, g, h, and i are each independently H, —OH, —ROH, —R(OH)2, —NH2, —NHR, —NR2, —SH, —RSH, or —R(SH)2, wherein at least one of a, b, c, d, e, f, g, h, and i on each repeating unit is not H. R, R1, and R2 are each independently a C1-C10 alkyl group, a C3-C10 cycloalkyl group, a C1-C10 hydroxyalkyl group, a C2-C10 alkoxy group, a C2-C10 alkoxy alkyl group, a C2-C10 acetyl group, a C3-C10 acetylalkyl group, a C1-C10 carboxyl group, a C2-C10 alkyl carboxyl group, or a C4-C10 cycloalkyl carboxyl group, and n is 2-1000. A resist layer is formed over the protective layer, and the resist layer is patterned.

公开(公告)号：US20240112905A1

公开(公告)日：2024-04-04

申请号：US18525473

申请日：2023-11-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Yu Chang ,  Jei Ming Chen ,  Tze-Liang Lee

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/768

CPC classification number: H01L21/02274 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/76802

Abstract: A method of forming a semiconductor device includes forming a mask layer over a substrate and forming an opening in the mask layer. A gap-filling material is deposited in the opening. A plasma treatment is performed on the gap-filling material. The height of the gap-filling material is reduced. The mask layer is removed. The substrate is patterned using the gap-filling material as a mask.

公开(公告)号：US11942322B2

公开(公告)日：2024-03-26

申请号：US17226872

申请日：2021-04-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： An-Ren Zi ,  Chun-Chih Ho ,  Yahru Cheng ,  Ching-Yu Chang

IPC: H01L21/033 ,  G03F7/00 ,  G03F7/20 ,  H01L21/308

CPC classification number: H01L21/0334 ,  G03F7/70033 ,  H01L21/3083

Abstract: In a method of manufacturing a semiconductor device, a metallic photoresist layer is formed over a target layer to be patterned, the metallic photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern. The metallic photo resist layer is an alloy layer of two or more metal elements, and the selective exposure changes a phase of the alloy layer.