公开(公告)号：US20220384632A1

公开(公告)日：2022-12-01

申请号：US17365996

申请日：2021-07-01

Applicant: United Microelectronics Corp.

Inventor： Chih Tung Yeh ,  Wen-Jung Liao

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/51

Abstract: Provided are a nitride semiconductor device and a manufacturing method thereof. The nitride semiconductor device includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a metal layer and a dielectric layer. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a trench. The trench exposes a part of the first nitride semiconductor layer. The metal layer is disposed in the trench. The dielectric layer is disposed in the trench and located between the metal layer and the first nitride semiconductor layer.

公开(公告)号：US11502177B2

公开(公告)日：2022-11-15

申请号：US17337437

申请日：2021-06-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shin-Chuan Huang ,  Chih-Tung Yeh ,  Chun-Ming Chang ,  Bo-Rong Chen ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/205 ,  H01L29/423

Abstract: A high-electron mobility transistor includes a substrate, a GaN channel layer over the substrate, an AlGaN layer over the GaN channel layer, a gate recess in the AlGaN layer, a source region and a drain region on opposite sides of the gate recess, a GaN source layer and a GaN drain layer grown on the AlGaN layer within the source region and the drain region, respectively, a p-GaN gate layer in and on the gate recess; and a re-grown AlGaN film on the AlGaN layer, on the GaN source layer and the GaN drain layer, and on interior surface of the gate recess.

公开(公告)号：US20220278223A1

公开(公告)日：2022-09-01

申请号：US17745853

申请日：2022-05-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Che-Hung Huang ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/66 ,  H01L29/778

Abstract: A high electron mobility transistor (HEMT) includes a buffer layer on a substrate, a barrier layer on the buffer layer, a p-type semiconductor layer on the buffer layer, a gate electrode on the p-type semiconductor layer, a source electrode and a drain electrode adjacent to two sides of the gate electrode on the barrier layer, a hard mask on the barrier layer and around the p-type semiconductor layer, the source electrode, and the drain electrode, and a passivation layer on the hard mask.

公开(公告)号：US11367779B2

公开(公告)日：2022-06-21

申请号：US16666414

申请日：2019-10-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Che-Hung Huang ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/66 ,  H01L29/778

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

公开(公告)号：US20220140124A1

公开(公告)日：2022-05-05

申请号：US17575655

申请日：2022-01-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shin-Chuan Huang ,  Chih-Tung Yeh ,  Chun-Ming Chang ,  Bo-Rong Chen ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/778 ,  H01L29/66 ,  H01L21/265 ,  H01L29/205 ,  H01L29/20

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; performing an implantation process through the hard mask to form a doped region in the barrier layer and the buffer layer; removing the hard mask and the barrier layer to form a first trench; forming a gate dielectric layer on the hard mask and into the first trench; forming a gate electrode on the gate dielectric layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.

公开(公告)号：US20210288150A1

公开(公告)日：2021-09-16

申请号：US17337437

申请日：2021-06-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shin-Chuan Huang ,  Chih-Tung Yeh ,  Chun-Ming Chang ,  Bo-Rong Chen ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/205 ,  H01L29/778 ,  H01L29/423 ,  H01L29/66

Abstract: A high-electron mobility transistor includes a substrate, a GaN channel layer over the substrate, an AlGaN layer over the GaN channel layer, a gate recess in the AlGaN layer, a source region and a drain region on opposite sides of the gate recess, a GaN source layer and a GaN drain layer grown on the AlGaN layer within the source region and the drain region, respectively, a p-GaN gate layer in and on the gate recess; and a re-grown AlGaN film on the AlGaN layer, on the GaN source layer and the GaN drain layer, and on interior surface of the gate recess.

公开(公告)号：US20210273086A1

公开(公告)日：2021-09-02

申请号：US17321534

申请日：2021-05-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Wen-Jung Liao

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/06

Abstract: A semiconductor device includes an enhancement mode high electron mobility transistor (HEMT) with an active region and an isolation region. The HEMT includes a substrate, a group III-V body layer, a group III-V barrier layer, recesses, a passivation layer and an etch mask layer. The group III-V body layer is disposed on the substrate. The group III-V barrier layer is disposed on the group III-V body layer in the active region and the isolation region. The recesses are disposed in the group III-V barrier layer in the active region and the isolation region, respectively. The passivation layer disposed in the recesses of the active region and the isolation region. The etch mask layer disposed between the passivation layer and the group III-V barrier layer in the active region, where the etch mask layer is spaced apart from bottoms of the recesses in the active region and the isolation region.

公开(公告)号：US20210175343A1

公开(公告)日：2021-06-10

申请号：US16731058

申请日：2019-12-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Bo-Rong Chen ,  Che-Hung Huang ,  Chun-Ming Chang ,  Yi-Shan Hsu ,  Chih-Tung Yeh ,  Shin-Chuan Huang ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/66 ,  H01L29/20 ,  H01L29/778

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.

公开(公告)号：US20210167198A1

公开(公告)日：2021-06-03

申请号：US16726263

申请日：2019-12-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/06 ,  H01L29/34 ,  H01L21/265 ,  H01L21/306 ,  H01L21/02 ,  H01L29/66

Abstract: A mesa structure includes a substrate. A mesa protrudes out of the substrate. The mesa includes a slope and a top surface. The slope surrounds the top surface. A lattice damage area is disposed at inner side of the slope. The mesa can optionally further includes an insulating layer covering the lattice damage area. The insulating layer includes an oxide layer or a nitride layer.

公开(公告)号：US20210143257A1

公开(公告)日：2021-05-13

申请号：US16691616

申请日：2019-11-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shin-Chuan Huang ,  Chih-Tung Yeh ,  Chun-Ming Chang ,  Bo-Rong Chen ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/205 ,  H01L29/778 ,  H01L29/66 ,  H01L29/423

Abstract: A high-electron mobility transistor includes a substrate; a buffer layer over the substrate; a GaN channel layer over the buffer layer; a AlGaN layer over the GaN channel layer; a gate recess in the AlGaN layer; a source region and a drain region on opposite sides of the gate recess; a GaN source layer and a GaN drain layer grown on the AlGaN layer within the source region and the drain region, respectively; and a p-GaN gate layer in and on the gate recess.