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    Integrated released beam sensor for sensing acceleration and associated methods
    81.
    发明授权
    Integrated released beam sensor for sensing acceleration and associated methods 有权
    集成释放的光束传感器，用于感测加速度和相关方法

    公开(公告)号：US06218209B1

    公开(公告)日：2001-04-17

    申请号：US09436560

    申请日：1999-11-09

    Applicant: Tsiu Chiu Chan ,  Melvin Joseph DeSilva

    Inventor： Tsiu Chiu Chan ,  Melvin Joseph DeSilva

    IPC: H01L2100

    CPC classification number: G01P15/135 ,  B81B2201/018 ,  B81C1/00246 ,  B81C2203/0735

    Abstract: An integrated circuit and method are provided for sensing activity such as acceleration in a predetermined direction. The integrated released beam sensor preferably includes a switch detecting circuit region and a sensor switching region connected to and positioned adjacent the switch detecting circuit region. The sensor switching region preferably includes a fixed contact layer, remaining portions of a sacrificial layer on the fixed contact layer, and a floating contact on the remaining portions of the sacrificial layer and having only portions thereof directly overlying the fixed contact layer and in spaced relation therefrom in a normally open position and extending lengthwise generally transverse to the predetermined direction so that the floating contact contacts the fixed contact layer responsive to acceleration in the predetermined direction. The floating contact is preferably a released beam which is released by opening a window or removing unwanted portions of the sacrificial layer. The methods of forming an integrated sensor advantageously are preferably compatible with know integrated circuit manufacturing processes, such as for CMOS circuit manufacturing, with only slight variations therefrom.

    Abstract translation: 提供集成电路和方法来感测诸如在预定方向上的加速度的活动。 集成释放的光束传感器优选地包括开关检测电路区域和连接到并且位于开关检测电路区域附近的传感器开关区域。 传感器切换区域优选地包括固定接触层，固定接触层上的牺牲层的剩余部分和牺牲层的剩余部分上的浮动接触，并且仅具有直接覆盖固定接触层的部分并以间隔关系 从而处于常开位置并且大致横向于预定方向延伸，使得浮动接触件响应于预定方向上的加速度而接触固定接触层。 浮动触点优选地是释放的光束，其通过打开窗口或去除牺牲层的不需要的部分来释放。 有利地形成集成传感器的方法优选地与知道的集成电路制造工艺相兼容，例如用于CMOS电路制造，仅具有轻微的变化。

    RADIO FREQUENCY MICRO-ELECTRO-MECHANICAL SWITCH AND RADIO FREQUENCY DEVICE
    83.
    发明公开
    RADIO FREQUENCY MICRO-ELECTRO-MECHANICAL SWITCH AND RADIO FREQUENCY DEVICE 审中-公开

    公开(公告)号：US20240186095A1

    公开(公告)日：2024-06-06

    申请号：US17796501

    申请日：2021-08-25

    Applicant: Beijing BOE Technology Development Co., Ltd. ,  BOE TECHNOLOGY GROUP CO., LTD.

    Inventor： Yingli SHI

    IPC: H01H59/00 ,  B81B3/00

    CPC classification number: H01H59/0009 ,  B81B3/0021 ,  B81B2201/018 ,  B81B2203/0109 ,  B81B2203/019 ,  H01H2059/0027

    Abstract: The present disclosure provides a radio frequency micro-electro-mechanical switch and a radio frequency device, belong to the field of micro-electro-mechanical systems technology, and can at least partially solve a problem that functional performance of an existing radio frequency micro-electro-mechanical switch is easily to be affected in scenarios such as bending deformation of devices. The radio frequency micro-electro-mechanical switch provided by the present disclosure includes: a substrate; and a signal electrode, a first ground electrode, a second ground electrode and a connecting membrane bridge disposed on the substrate, the connecting membrane bridge crosses over the signal electrode, two ends of the connecting membrane bridge are connected to the first ground electrode and the second ground electrode respectively, and the connecting membrane bridge includes a stretchable structure being stretchable in a stretchable direction the same as an extending direction in which the connecting membrane bridge extends.

    Electro-Mechanical Switching Devices
    89.
    发明申请
    Electro-Mechanical Switching Devices 有权
    机电开关设备

    公开(公告)号：US20170005172A1

    公开(公告)日：2017-01-05

    申请号：US14788222

    申请日：2015-06-30

    Applicant: Infineon Technologies AG

    Inventor： Michael Hutzler

    IPC: H01L29/423 ,  H01L27/088 ,  B81B3/00

    CPC classification number: H01L29/4236 ,  B81B3/001 ,  B81B3/0086 ,  B81B2201/018 ,  B81B2203/051 ,  H01L27/088

    Abstract: A switching device includes an opening disposed in a substrate. A source is disposed adjacent the opening and has a contact surface parallel to sidewalls of the opening. A drain is disposed adjacent the opening and has a contact surface parallel to the sidewalls of the opening. A moveable gate stack includes a channel and a gate. The moveable gate stack is disposed within the opening.

    Abstract translation: 开关装置包括设置在基板中的开口。 源极邻近开口设置并且具有平行于开口侧壁的接触表面。 排水口邻近开口设置并且具有平行于开口侧壁的接触表面。 可移动门堆栈包括通道和门。 可移动栅极堆叠设置在开口内。

    Variable capacitor and switch structures in single crystal piezoelectric MEMS devices using bimorphs
    90.
    发明授权
    Variable capacitor and switch structures in single crystal piezoelectric MEMS devices using bimorphs 有权
    使用双压电晶片的单晶压电MEMS器件中的可变电容器和开关结构

    公开(公告)号：US09466430B2

    公开(公告)日：2016-10-11

    申请号：US14071025

    申请日：2013-11-04

    Applicant: RF Micro Devices, Inc.

    Inventor： Kushal Bhattacharjee

    IPC: H01L41/09 ,  H03H9/125 ,  H03H9/15 ,  H01G5/18 ,  H03H9/02 ,  H03H9/46 ,  H03H9/24 ,  B81B3/00

    CPC classification number: H01G5/18 ,  B81B3/0086 ,  B81B2201/018 ,  B81B2201/0271 ,  B81B2201/032 ,  H03H9/02275 ,  H03H9/02409 ,  H03H9/2405 ,  H03H9/2463 ,  H03H9/462 ,  H03H9/467 ,  H03H2009/241

    Abstract: A micro-electrical-mechanical systems (MEMS) device includes a substrate, one or more anchors formed on a first surface of the substrate, and a piezoelectric layer suspended over the first surface of the substrate by the one or more anchors. A first electrode may be provided on a first surface of the piezoelectric layer facing the first surface of the substrate, such that the first electrode is in contact with a first bimorph layer of the piezoelectric layer. A second electrode may be provided on a second surface of the piezoelectric layer opposite the first surface, such that the second electrode is in contact with a second bimorph layer of the piezoelectric layer.

    Abstract translation: 微电气机械系统（MEMS）装置包括衬底，形成在衬底的第一表面上的一个或多个锚固体和通过一个或多个锚固件悬挂在衬底的第一表面上的压电层。 第一电极可以设置在面向基板的第一表面的压电层的第一表面上，使得第一电极与压电层的第一双压电晶片层接触。 第二电极可以设置在与第一表面相对的压电层的第二表面上，使得第二电极与压电层的第二双晶片层接触。

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