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    Tilt structure
    81.
    发明授权
    Tilt structure 有权
    倾斜结构

    公开(公告)号：US08802217B2

    公开(公告)日：2014-08-12

    申请号：US13072127

    申请日：2011-03-25

    Applicant: Takahiko Yoshizawa

    Inventor： Takahiko Yoshizawa

    IPC: B32B3/00

    CPC classification number: G02B5/284 ,  B81B2201/0292 ,  B81C1/00126 ,  G01J3/0213 ,  G01J3/26 ,  G01J3/36 ,  G01J3/51 ,  G02B5/28 ,  G02B26/007 ,  Y10T428/24562 ,  Y10T428/24612

    Abstract: A tilt structure includes a shaft section formed on a substrate section, a tilt structure film having one end formed on an upper surface of the shaft section, and the other end bonded to the substrate section, and a thin film section provided to the tilt structure film, located on a corner section composed of the upper surface of the shaft section and a side surface of the shaft section, and having a film thickness thinner than the tilt structure film, the tilt structure film is bent in the thin film section, and an acute angle is formed by the substrate section and the tilt structure film.

    Abstract translation: 倾斜结构包括形成在基板部分上的轴部分，倾斜结构膜，其一端形成在轴部分的上表面上，另一端接合到基板部分;以及薄膜部分，设置在倾斜结构 薄膜，位于由所述轴部的上表面构成的角部和所述轴部的侧面之间，并且具有比所述倾斜结构膜更薄的膜厚，所述倾斜结构膜在所述薄膜部弯曲，并且 由基板部和倾斜结构膜形成锐角。

    MEMS-based micro and nano grippers with two axis force sensors
    82.
    发明授权
    MEMS-based micro and nano grippers with two axis force sensors 有权
    基于MEMS的微型和纳米夹具具有双轴力传感器

    公开(公告)号：US08623222B2

    公开(公告)日：2014-01-07

    申请号：US13652851

    申请日：2012-10-16

    Applicant: Yu Sun ,  Keekyoung Kim

    Inventor： Yu Sun ,  Keekyoung Kim

    IPC: C23F1/00

    CPC classification number: B81C99/002 ,  B25J9/104 ,  B81B2201/0292 ,  B81B2201/031 ,  B81B2201/033

    Abstract: The present invention relates to a design and microfabrication method for microgrippers that are capable of grasping micro and nano objects of a large range of sizes and two-axis force sensing capabilities. Gripping motion is produced by one or more electrothermal actuators. Integrated force sensors along x and y directions enable the measurement of gripping forces as well as the forces applied at the end of microgripper arms along the normal direction, both with a resolution down to nanoNewton. The microfabrication method enables monolithic integration of the actuators and the force sensors.

    Abstract translation: 本发明涉及一种微抓爪的设计和微细加工方法，其能够抓住大范围尺寸和双轴力感测能力的微型和纳米物体。 夹持运动由一个或多个电热致动器产生。 沿x和y方向的集成力传感器可以测量夹紧力以及沿着法向方向施加在微夹臂末端的力，并且分辨率低至纳摩顿。 微加工方法可实现致动器和力传感器的整体集成。

    MICROMECHANICAL SENSOR APPARATUS WITH A MOVABLE GATE, AND CORRESPONDING PRODUCTION PROCESS
    83.
    发明申请
    MICROMECHANICAL SENSOR APPARATUS WITH A MOVABLE GATE, AND CORRESPONDING PRODUCTION PROCESS 有权
    具有可移动闸门的微型传感器装置和相应的生产过程

    公开(公告)号：US20130221411A1

    公开(公告)日：2013-08-29

    申请号：US13774052

    申请日：2013-02-22

    Applicant: Robert Bosch GmbH

    Inventor： Oleg Jakovlev ,  Alexander Buhmann ,  Ando Feyh

    IPC: B81B3/00 ,  B81C1/00

    CPC classification number: B81B3/0086 ,  B81B3/0021 ,  B81B2201/0292 ,  B81C1/00698

    Abstract: A micromechanical sensor apparatus has a movable gate and a field effect transistor. The field effect transistor has a drain region, a source region, an intermediate channel region with a first doping type, and a movable gate which is separated from the channel region by an intermediate space. The drain region, the source region, and the channel region are arranged in a substrate. A guard region is provided in the substrate at least on the longitudinal sides of the channel region and has a second doping type which is the same as the first doping type and has a higher doping concentration.

    Abstract translation: 微机械传感器装置具有可移动栅极和场效应晶体管。 场效应晶体管具有漏极区域，源极区域，具有第一掺杂型的中间沟道区域以及通过中间空间与沟道区域分离的可移动栅极。 漏极区域，源极区域和沟道区域布置在衬底中。 保护区域至少在沟道区的纵向侧设置在衬底中，并且具有与第一掺杂类型相同并且具有较高掺杂浓度的第二掺杂类型。

    Method for Microfabrication of a Capacitive Micromachined Ultrasonic Transducer Comprising a Diamond Membrane and a Transducer Thereof
    84.
    发明申请
    Method for Microfabrication of a Capacitive Micromachined Ultrasonic Transducer Comprising a Diamond Membrane and a Transducer Thereof 有权
    包含金刚石膜及其传感器的电容式微加工超声波传感器的微加工方法

    公开(公告)号：US20120256517A1

    公开(公告)日：2012-10-11

    申请号：US13083599

    申请日：2011-04-11

    Applicant: Baris Bayram

    Inventor： Baris Bayram

    IPC: H02N1/00 ,  H04R31/00

    CPC classification number: B81C1/00158 ,  B06B1/0292 ,  B81B2201/0292 ,  B81C2201/0125 ,  Y10T29/49005

    Abstract: This invention relates generally to capacitive micromachined ultrasonic transducers (CMUTs), particularly to those comprising diamond or diamond like carbon membranes and a method of microfabrication of such CMUTs, wherein the membrane of diamond or diamond like carbon is attached to the substrate by plasma-activated direct bonding of an interlayer of high temperature oxide (HTO).

    Abstract translation: 本发明一般涉及电容微加工超声波换能器（CMUT），特别涉及包括金刚石或类似金刚石的碳膜的那些，以及这种CMUT的微细加工方法，其中金刚石或类似金刚石的碳膜通过等离子体激活 直接键合高温氧化物（HTO）的中间层。

    Integrated capacitive microfluidic sensors method and apparatus
    88.
    发明授权
    Integrated capacitive microfluidic sensors method and apparatus 有权
    集成电容微流体传感器的方法和装置

    公开(公告)号：US07796371B2

    公开(公告)日：2010-09-14

    申请号：US11830581

    申请日：2007-07-30

    Applicant: Jun Xie ,  Jason Shih ,  Yu-Chong Tai

    Inventor： Jun Xie ,  Jason Shih ,  Yu-Chong Tai

    IPC: H01G7/00

    CPC classification number: G01N27/226 ,  B81B7/02 ,  B81B2201/0292 ,  B81B2201/058 ,  G01L9/0042 ,  G01L9/0072

    Abstract: A micro fluidic device and method for capacitive sensing. The device includes a fluid channel including an inlet at a first end and an outlet at a second end, a cavity region coupled to the fluid channel, and a polymer based membrane coupled between the fluid channel and the cavity region. Additionally, the device includes a first capacitor electrode coupled to the membrane, a second capacitor electrode coupled to the cavity region and physically separated from the first capacitor electrode by at least the cavity region, and an electrical power source coupled between the first capacitor electrode and the second capacitor electrode and causing an electric field at least within the cavity region. The polymer based membrane includes a polymer.

    Abstract translation: 一种用于电容式感测的微流体装置和方法。 该装置包括流体通道，其包括在第一端处的入口和在第二端处的出口，耦合到流体通道的空腔区域以及耦合在流体通道和腔区域之间的基于聚合物的膜。 另外，该器件包括耦合到膜的第一电容器电极，耦合到空腔区域的第二电容器电极，并且至少通过腔区域与第一电容器电极物理分离;以及电源，耦合在第一电容器电极和 所述第二电容器电极至少在所述腔区域内引起电场。 基于聚合物的膜包括聚合物。

    Photo-sensitive MEMS structure
    89.
    发明授权
    Photo-sensitive MEMS structure 失效
    光敏MEMS结构

    公开(公告)号：US07616425B2

    公开(公告)日：2009-11-10

    申请号：US11982002

    申请日：2007-10-31

    Applicant: Vladimir Anatolyevich Aksyuk ,  Maria Elina Simon ,  Richart Elliott Slusher

    Inventor： Vladimir Anatolyevich Aksyuk ,  Maria Elina Simon ,  Richart Elliott Slusher

    IPC: H01G5/00

    CPC classification number: H02N10/00 ,  B81B2201/0292 ,  G01J5/40

    Abstract: A heat-sensitive apparatus includes a substrate with a top surface, one or more bars being rotatably joined to the surface and having bimorph portions, and a plate rotatably joined to the surface and substantially rigidly joined to the one or more bars. Each bimorph portion bends in response to being heated. The one or more bars and the plate are configured to cause the plate to move farther away from the top surface in response to the one or more bimorph portions being heated.

    Abstract translation: 热敏设备包括具有顶表面的基底，一个或多个条可旋转地接合到该表面并具有双压电晶片部分，以及可旋转地接合到该表面并且基本上刚性地连接到一个或多个条的板。 每个双压电晶片部分响应于加热而弯曲。 一个或多个杆和板被配置成响应于加热的一个或多个双压电晶片部分而使板移动离开顶表面更远。

    Wafer level sensing package and manufacturing process thereof
    90.
    发明申请
    Wafer level sensing package and manufacturing process thereof 审中-公开
    晶圆级感测封装及其制造工艺

    公开(公告)号：US20090121299A1

    公开(公告)日：2009-05-14

    申请号：US12073392

    申请日：2008-03-05

    Applicant: Lung-Tai Chen ,  Chun-Hsun Chu ,  Tzong-Che Ho ,  Bor-Chen Tsai

    Inventor： Lung-Tai Chen ,  Chun-Hsun Chu ,  Tzong-Che Ho ,  Bor-Chen Tsai

    IPC: H01L29/00 ,  H01L21/00

    CPC classification number: B81C1/00793 ,  B81B7/0054 ,  B81B2201/0292 ,  B81B2207/07 ,  B81C1/00182 ,  B81C2201/053 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/13023 ,  H01L2924/1461 ,  H01L2924/00

    Abstract: A wafer level sensing package and manufacturing process thereof are described. The process includes providing a wafer having sensing chips, in which each sensing chip has a sensing area and pads; forming a stress release layer on a wafer surface; cladding a photoresist layer on the stress release layer; patterning the photoresist layer to expose the pads and a portion of the stress release layer, without exposing opening areas of the sensing areas; forming a conductive metal layer of re-distributed pads on the portion of the stress release layer exposed by the photoresist layer; removing the photoresist layer; forming a re-cladding photoresist layer on the stress release layer and the conductive metal layer; forming holes in the re-cladding photoresist layer above the re-distributed pad area; and forming conductive bumps in the holes to electrically connect to the conductive metal layer.

    Abstract translation: 描述了晶片级感测封装及其制造工艺。 该过程包括提供具有感测芯片的晶片，其中每个感测芯片具有感测区域和焊盘; 在晶片表面上形成应力释放层; 在应力释放层上包覆光致抗蚀剂层; 图案化光致抗蚀剂层以暴露垫和应力释放层的一部分，而不暴露感测区域的开口区域; 在由光致抗蚀剂层暴露的应力释放层的部分上形成再分布焊盘的导电金属层; 去除光致抗蚀剂层; 在所述应力释放层和所述导电金属层上形成再包覆光致抗蚀剂层; 在再分布的焊盘区域上方的再包层光致抗蚀剂层中形成孔; 以及在所述孔中形成导电凸块以电连接到所述导电金属层。

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