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    Integrated polarization splitter/combiner
    85.
    发明授权
    Integrated polarization splitter/combiner 有权
    集成偏振分离器/组合器

    公开(公告)号：US07620275B2

    公开(公告)日：2009-11-17

    申请号：US12035636

    申请日：2008-02-22

    Applicant: Christopher Richard Doerr

    Inventor： Christopher Richard Doerr

    IPC: G02B1/26 ,  G02B1/42

    CPC classification number: G02F1/01708 ,  B82Y20/00 ,  G02F2001/0144 ,  G02F2001/212 ,  G02F2201/063 ,  G02F2203/07

    Abstract: Provided is an apparatus and method for use thereof. The apparatus, in one embodiment, includes a 1×2 coupler in communication with a waveguide. The 1×2 coupler, in this embodiment, is configured to separate an input finite bandwidth optical signal provided from the optical waveguide into two similar optical signals. Input ends of first and second waveguide arms, in one embodiment, are in communication with the 1×2 coupler and configured to receive ones of the input optical signals. An inherent birefringence of each of the first and second waveguide arms may be substantially similar. Moreover, the first and second waveguide arms have different physical path lengths that differ by an amount (ΔL). Additionally, a 2×2 coupler may be in optical communication with an output end of the first and second waveguide arms and configured to provide an output TE polarization and an output TM polarization.

    Abstract translation: 提供一种其使用的装置和方法。 在一个实施例中，该装置包括与波导连通的1x2耦合器。 在本实施例中，1x2耦合器被配置为将从光波导提供的输入有限带宽光信号分离成两个相似的光信号。 在一个实施例中，第一和第二波导臂的输入端与1x2耦合器通信并被配置为接收输入光信号中的一个。 第一和第二波导臂中的每一个的固有双折射可以是基本相似的。 此外，第一和第二波导臂具有不同的物理路径长度（DeltaL）。 另外，2x2耦合器可以与第一和第二波导臂的输出端光学通信并且被配置为提供输出TE偏振和输出TM偏振。

    Semiconductor photonic nano communication link apparatus
    86.
    发明授权
    Semiconductor photonic nano communication link apparatus 有权
    半导体光子纳米通信链路装置

    公开(公告)号：US07603016B1

    公开(公告)日：2009-10-13

    申请号：US11801766

    申请日：2007-04-30

    Applicant: Richard A. Soref

    Inventor： Richard A. Soref

    IPC: G02B6/10

    CPC classification number: G02B6/1225 ,  B82Y20/00 ,  G02F1/025 ,  G02F2001/0157 ,  G02F2201/063 ,  G02F2201/58 ,  G02F2202/32 ,  H01L31/165 ,  H01L31/173 ,  H01S5/0265 ,  H01S5/0424 ,  H01S5/3223

    Abstract: A CMOS compatible ten-gigabit-per-second region nano-waveguide included photonic communication link apparatus of low energy use per transmitted bit. An embodiment of the link includes an electrically pumped laser, an electro absorption modulator and a photodetector for the 1.5 to 2.0 micrometer infrared spectral region; omission of the separate electro absorption modulator is additionally disclosed. Each of these three nano-scale elements preferably includes active semiconductor crystal material situated in a preferably Silicon resonator within a nano-strip waveguide. The resonator is defined by dispersed resonator mirrors having tapered separation distance one dimensional photonic crystal lattice apertures of oxide holes or slots. Each of the three devices may be a semiconductor heterodiode pumped or controlled by laterally disposed wings enclosing the resonator to form a lateral PIN heterodiode for current injection or high E-field generation depending on bias and composition conditions selected.

    Abstract translation: CMOS兼容的十吉比特每秒区域纳米波导包括每个传输位的低能量使用的光子通信链路装置。 链路的实施例包括电泵浦激光器，电吸收调制器和用于1.5至2.0微米红外光谱区域的光电检测器; 另外公开了省略分离的电吸收调制器。 这三个纳米级元件中的每一个优选地包括位于纳米条波导内的优选硅谐振器中的有源半导体晶体材料。 谐振器由具有锥形分离距离的分散的谐振器反射镜定义为氧化物孔或狭缝的一维光子晶格点阵孔。 三个装置中的每一个可以是由侧向设置的翼状物泵送或控制的半导体异质二极管，所述翅片围绕谐振器以形成用于电流注入的侧向PIN异二极管或者根据所选择的偏置和组成条件的高电场产生。

    INTEGRATED POLARIZATION SPLITTER/COMBINER
    87.
    发明申请
    INTEGRATED POLARIZATION SPLITTER/COMBINER 有权
    集成极化分离器/组合器

    公开(公告)号：US20090214150A1

    公开(公告)日：2009-08-27

    申请号：US12035636

    申请日：2008-02-22

    Applicant: Christopher Richard Doerr

    Inventor： Christopher Richard Doerr

    IPC: G02F1/035

    CPC classification number: G02F1/01708 ,  B82Y20/00 ,  G02F2001/0144 ,  G02F2001/212 ,  G02F2201/063 ,  G02F2203/07

    Abstract: Provided is an apparatus and method for use thereof. The apparatus, in one embodiment, includes a 1x2 coupler in communication with a waveguide. The 1x2 coupler, in this embodiment, is configured to separate an input finite bandwidth optical signal provided from the optical waveguide into two similar optical signals. Input ends of first and second waveguide arms, in one embodiment, are in communication with the 1x2 coupler and configured to receive ones of the input optical signals. An inherent birefringence of each of the first and second waveguide arms may be substantially similar. Moreover, the first and second waveguide arms have different physical path lengths that differ by an amount (ΔL). Additionally, a 2x2 coupler may be in optical communication with an output end of the first and second waveguide arms and configured to provide an output TE polarization and an output TM polarization.

    Abstract translation: 提供一种其使用的装置和方法。 在一个实施例中，该装置包括与波导连通的1x2耦合器。 在本实施例中，1x2耦合器被配置为将从光波导提供的输入有限带宽光信号分离成两个相似的光信号。 在一个实施例中，第一和第二波导臂的输入端与1x2耦合器通信并被配置为接收输入光信号中的一个。 第一和第二波导臂中的每一个的固有双折射可以是基本相似的。 此外，第一和第二波导臂具有不同的物理路径长度（DeltaL）。 另外，2x2耦合器可以与第一和第二波导臂的输出端光学通信并且被配置为提供输出TE偏振和输出TM偏振。

    Semiconductor optical modulator integrated resistor for impedance matching using semiconductor doped layer and method of fabricating the same
    89.
    发明授权
    Semiconductor optical modulator integrated resistor for impedance matching using semiconductor doped layer and method of fabricating the same 失效
    用于使用半导体掺杂层的阻抗匹配的半导体光调制器集成电阻器及其制造方法

    公开(公告)号：US07324258B2

    公开(公告)日：2008-01-29

    申请号：US11151217

    申请日：2005-06-13

    Applicant: Yong Hwan Kwon ,  Joong Seon Choe

    Inventor： Yong Hwan Kwon ,  Joong Seon Choe

    IPC: G02F1/03

    CPC classification number: G02F1/025 ,  G02F1/0121 ,  G02F2201/063 ,  H01L2224/48091 ,  H01L2924/00014

    Abstract: Provided is a semiconductor optical modulator device in which a resistor for impedance matching is integrated in a device in order to improve performance and to reduce cost during the fabrication of an ultra high speed optical modulator module. A doped layer in an epitaxial layer of the optical modulator device is used as a resistor for impedance matching. According to this method, it is possible to more easily realize an optical device compared with optical device fabrication processes in which additional resistors are used in the outside and the inside of the device for impedance matching.

    Abstract translation: 提供了一种半导体光调制器件，其中用于阻抗匹配的电阻器集成在器件中，以便在超高速光调制器模块的制造期间提高性能并降低成本。 光调制器件的外延层中的掺杂层用作阻抗匹配的电阻器。 根据该方法，与用于阻抗匹配的装置的外部和内部使用附加电阻器的光学器件制造工艺相比，可以更容易地实现光学器件。

    Laterally Implanted Electroabsorption Modulated Laser
    90.
    发明申请
    Laterally Implanted Electroabsorption Modulated Laser 审中-公开
    侧向植入电吸收调制激光

    公开(公告)号：US20070223543A1

    公开(公告)日：2007-09-27

    申请号：US11569385

    申请日：2005-05-20

    Applicant: Kelvin Prosyk ,  Joan Haysom

    Inventor： Kelvin Prosyk ,  Joan Haysom

    IPC: H01S5/026 ,  G02F1/015

    CPC classification number: B82Y20/00 ,  G02F1/015 ,  G02F1/01708 ,  G02F1/025 ,  G02F2001/0157 ,  G02F2001/212 ,  G02F2201/063 ,  G02F2202/108 ,  H01L21/265 ,  H01S5/0265 ,  H01S5/2063 ,  H01S5/22

    Abstract: A monolithically integrated electroabsorption modulated laser having a ridge waveguide structure, has lateral ion implantation. The integrated device has a laser section and a modulator section. The modulator section has ion implanted regions adjacent to the waveguide ridge. The implanted regions penetrate through the top cladding layer to reduce capacitance within the intrinsic active core of the reverse biased modulator and allow a shallow etched ridge waveguide structure to be used for the modulator. The device provides good optical coupling, efficient manufacturing, and good high power performance.

    Abstract translation: 具有脊波导结构的单片集成电吸收调制激光器具有横向离子注入。 集成装置具有激光部和调制部。 调制器部分具有与波导脊相邻的离子注入区域。 注入区域穿透顶部包层以减小反向偏置调制器的本征有效核心内的电容，并允许将浅蚀刻脊波导结构用于调制器。 该器件提供良好的光耦合，高效的制造和良好的高功率性能。

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