System and method for generating optical frequency combs using an optical waveguide including chirped Bragg gratings

    公开(公告)号:US12019353B2

    公开(公告)日:2024-06-25

    申请号:US18045936

    申请日:2022-10-12

    CPC classification number: G02F1/365 G02F1/3542 G02F2201/307 G02F2203/56

    Abstract: An optical frequency comb generation system includes an optical waveguide portion having a uniform width, a first chirped Bragg grating disposed at one end of the optical waveguide portion and a second chirped Bragg grating disposed at the other end of the optical waveguide portion. The first chirped Bragg grating includes at least a first periodic variation having a first refractive index and a second periodic variation having a second refractive index. The second chirped Bragg grating includes the at least first and second periodic variations. A first cavity associated with a first resonant frequency extends between the first periodic variation of the first chirped Bragg grating and the first periodic variation of the second chirped Bragg grating. A second cavity associated with a second resonant frequency extends between the second periodic variation of the first chirped Bragg grating and the second periodic variation of the second chirped Bragg grating.

    PROGRAMMABLE TWO-DIMENSIONAL SIMULTANEOUS MULTI-BEAM OPTICALLY OPERATED PHASED ARRAY RECEIVER CHIP AND MULTI-BEAM CONTROL METHOD

    公开(公告)号:US20230291483A1

    公开(公告)日:2023-09-14

    申请号:US18197751

    申请日:2023-05-16

    Applicant: ZHEJIANG LAB

    Inventor: Qiang ZHANG Hui YU

    Abstract: A programmable two-dimensional simultaneous multi-beam optically operated phased array receiver chip is manufactured based on silicon-on-insulator (SOI) and indium phosphide (InP) semiconductor manufacturing processes, including the SiN process. The InP-based semiconductor is used for preparing a laser array chip and a semiconductor optical amplifier array chip, the SiN is used for preparing an optical power divider, and the SOI semiconductor is used for preparing a silicon optical modulator, a germanium-silicon detector, an optical wavelength multiplexer, a true delay line, and other passive optical devices. The whole integration of the receiver chip is realized through heterogeneous integration of the InP-based chip and the SOI-based chip. Simultaneous multi-beam scanning can be realized through peripheral circuit programming control. The chip not only can realize two-dimensional multi-beam scanning, but also has strong expansibility, such that the chip can be used for ultra-wideband high-capacity wireless communication and simultaneous multi-target radar recognition systems.

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