公开(公告)号：US06783418B2

公开(公告)日：2004-08-31

申请号：US10758801

申请日：2004-01-15

Applicant: Thomas Novet ,  David M. Schut

Inventor： Thomas Novet ,  David M. Schut

IPC: H01J924

CPC classification number: B82Y10/00 ,  H01J1/308 ,  H01J1/312 ,  Y10S977/939

Abstract: An emitter includes an electron supply layer, a dielectric layer on the electron supply layer defining an emission area, and a filled zeolite emission layer within the defined emission area and in contact with the electron supply layer. The filled zeolite emission layer holds a semiconductor material within the cage of the zeolite.

Abstract translation: 发射体包括电子供应层，电子供应层上限定发射区的电介质层，以及在限定的发射区内并与电子供应层接触的填充的沸石发射层。 填充的沸石发射层将半导体材料保持在沸石的保持架内。

公开(公告)号：US20040159829A1

公开(公告)日：2004-08-19

申请号：US10369365

申请日：2003-02-18

Inventor： Zhizhang Chen ,  Hang Liao ,  Alexander Govyadinov

IPC: H01L029/06 ,  H01L029/12

CPC classification number: B82Y10/00 ,  H01J1/308 ,  H01J1/312 ,  H01J9/022 ,  H01J31/127

Abstract: A method for emitting electrons includes the steps of applying a voltage to an electron source to cause hot electrons to be generated with the source, and applying an electric field to cause at least a portion of the hot electrons to be emitted from the electron source.

Abstract translation: 用于发射电子的方法包括以下步骤：向电子源施加电压以使源产生热电子，并且施加电场以使至少一部分热电子从电子源发射。

公开(公告)号：US20040095868A1

公开(公告)日：2004-05-20

申请号：US10697170

申请日：2003-10-30

Inventor： Henryk Birecki ,  Vu Thien Binh ,  Si-Ty Lam ,  Huei Pei Kuo ,  Steven L. Naberhuis

IPC: G11B009/10

CPC classification number: B82Y10/00 ,  G11B9/14 ,  G11B9/1409 ,  H01J1/308

Abstract: A field emission device, which among other things may be used within an ultra-high density storage system, is disclosed. The emitter device includes an emitter electrode, an extractor electrode, and a solid-state field controlled emitter that utilizes a Schottky metal-semiconductor junction or barrier. The Schottky metal-semiconductor barrier is formed on the emitter electrode and electrically couples with the extractor electrode such that when an electric potential is placed between the emitter electrode and the extractor electrode, a field emission of electrons is generated from an exposed surface of the semiconductor layer. Further, the Schottky metal may be selected from typical conducting layers such as platinum, gold, silver, or a conductive semiconductor layer that is able to provide a high electron pool at the barrier. The semiconductor layer placed on the Schottky metal is typically very weakly conductive of n-type and has a wide band gap in order to create conditions conducive to creating induced negative electron affinity at applied fields necessary to provide electron emission. One type of wide band-gap material can be selected from titanium dioxide or titanium nitride or other comparable materials.

Abstract translation: 公开了一种场致发射装置，其可以在超高密度存储系统内使用。 发射器件包括发射电极，提取器电极和利用肖特基金属 - 半导体结或势垒的固态场控制的发射极。 肖特基金属半导体势垒形成在发射极电极上并与提取器电极电耦合，使得当在发射电极和提取器电极之间放置电位时，从半导体的暴露表面产生电子的场发射 层。 此外，肖特基金属可以选自能够在屏障处提供高电子池的典型的导电层，例如铂，金，银或导电半导体层。 放置在肖特基金属上的半导体层通常是n型非常弱的导电性并且具有宽的带隙，以便产生有助于在提供电子发射所必需的施加场产生诱导的负电子亲和力的条件。 一种类型的宽带隙材料可以选自二氧化钛或氮化钛或其他可比较的材料。

公开(公告)号：US20030071256A1

公开(公告)日：2003-04-17

申请号：US09975297

申请日：2001-10-12

Inventor： Viatcheslav V. Ossipov ,  Alexandre M. Bratkovski ,  Henryk Birecki

IPC: H01L029/06 ,  H01L029/12

CPC classification number: B82Y10/00 ,  H01J1/308 ,  H01J1/312

Abstract: A cold electron emitter may include a heavily a p-doped semiconductor, and dielectric layer, and a metallic layer (p-D-M structure). A modification of this structure includes a heavily nnull doped region below the p region (nnull-p-D-M structure). These structures make it possible to combine high current emission with stable (durable) operation. The high current density is possible since under certain voltage drop across the dielectric layer, effective negative electron affinity is realized for the quasi-equilibrium nullcoldnull electrons accumulated in the depletion layer in the p-region next to the dielectric layer. These electrons are generated as a result of the avalanche in the p-D-M structure or injection processes in the nnull-p-D-M structure. These emitters are stable since they make use of relatively low extracting field in the vacuum region and are not affected by contamination and absorption from accelerated ions. In addition, the structures may be fabricated with current state-of-the-art technology.

Abstract translation: 冷电子发射器可以包括大量p掺杂的半导体和介电层，以及金属层（p-D-M结构）。 该结构的修改包括p区下面的n +掺杂区域（n + -p-D-M结构）。 这些结构使得可以将高电流发射与稳定（耐用）操作相结合。 高电流密度是可能的，因为在电介质层两端的某些电压降下，实现了与介质层相邻的p区中累积在耗尽层中的准平衡“冷”电子的有效负电子亲和力。 这些电子是由于p-D-M结构中的雪崩或n + -p-D-M结构中的注入过程而产生的。 这些发射体是稳定的，因为它们在真空区域中使用相对低的提取场，并且不受加速离子的污染和吸收的影响。 此外，结构可以用当前最先进的技术制造。

公开(公告)号：US06064074A

公开(公告)日：2000-05-16

申请号：US46035

申请日：1998-03-23

Applicant: Tom Van Zutphen ,  Frederik C. Gehring ,  Mark A. De Samber ,  Erwin A. Hijzen ,  Ron Kroon

Inventor： Tom Van Zutphen ,  Frederik C. Gehring ,  Mark A. De Samber ,  Erwin A. Hijzen ,  Ron Kroon

IPC: H01J1/30 ,  H01J1/308 ,  H01J29/04 ,  H01L29/866 ,  H01L29/06

CPC classification number: H01J29/04 ,  H01J1/308

Abstract: Semiconductor device with a semiconductor cathode having an emissive part (pn junction) separated from a contact part which has locations at which a controlled breakdown occurs on a contact part metallization at excessive voltages, so that, during manufacture and operation, the emissive part in an election tube is protected from damage.

Abstract translation: 具有半导体阴极的半导体器件具有与接触部分分离的发射部分（pn结），所述接触部分具有在过电压下在接触部分金属化处发生受控击穿的位置，使得在制造和操作期间，发射部分在 选管保护免受损坏。

公开(公告)号：US6011356A

公开(公告)日：2000-01-04

申请号：US70398

申请日：1998-04-30

Applicant: John L. Janning ,  Robert L. Clark

Inventor： John L. Janning ,  Robert L. Clark

IPC: H01J1/308 ,  H01J1/30

CPC classification number: H01J1/308 ,  H01J2201/319 ,  H01J2329/00

Abstract: For use in cathodoluminescent field emission display devices, a cathode emitter can comprise an inverted field effect transistor having a diamond film or other low effective work function material deposited onto the channel layer of the transistor, such that the diamond film provides a source of primary electron emissions. A variable voltage source is applied to the gate of the transistor creating an electric field that controls the conductivity of the channel layer, thereby activating or deactivating electron emissions from this cathode emitter structure. In addition, electron blocking junctions can be incorporated into the emitter structure to inhibit current flow through the device during a deactivated state. In a variation, the transistor of the cathode emitter has the diamond film being deposited onto an electrically conductive pad that is electrically connected to, and extending outwardly from, the transistor. Alternatively, a sideways laterally gated transistor structure can be used with the emitter surface being applied to the transistor's drain. A near mono-molecular oxide film of high secondary electron emission material can also be included on the emitter surface for enhanced electron emissions.

Abstract translation: 为了用于阴极发光场发射显示装置，阴极发射器可以包括具有沉积在晶体管的沟道层上的金刚石膜或其它低有效功函数材料的反向场效应晶体管，使得金刚石膜提供初级电子源 排放。 可变电压源被施加到晶体管的栅极，产生控制沟道层的导电性的电场，从而激活或去激活来自该阴极发射极结构的电子发射。 此外，电子阻挡接头可以结合到发射极结构中，以在去激活状态期间阻止电流流过器件。 在一个变型中，阴极发射器的晶体管具有金刚石膜，该金刚石膜被沉积到与晶体管电连接并从晶体管向外延伸的导电焊盘上。 或者，可以使用侧向横向门控晶体管结构，其中发射极表面被施加到晶体管的漏极。 高二次电子发射材料的近单分子氧化膜也可以包括在发射体表面上以增强电子发射。

公开(公告)号：US5945777A

公开(公告)日：1999-08-31

申请号：US70611

申请日：1998-04-30

Applicant: John L. Janning ,  Robert L. Clark

Inventor： John L. Janning ,  Robert L. Clark

IPC: H01J1/308 ,  H01J1/62

CPC classification number: H01J1/308 ,  H01J2329/00

Abstract: For use in cathodoluminescent field emission display devices, a gated channel layer of an inverted field effect transistor functions as the electron emissive layer for a flat film surface conduction cathode emitter. In such emitters, electrons are emitted from the surface of a flat thin emissive film when an electric current is caused to flow through the film in parallel with the surface of the film. An electric field caused by a variable voltage source being applied to the gate of the transistor can control the conductivity of the channel layer, thereby controlling the level of electron emissions from the cathode emitter structure. In a variation, the field effect transistor is constructed with a two-tier structure that during operation is designed to keep conduction near the surface of the transistor. As a result, this device pushes electrons towards the exposed surface where they can then escape from the channel layer to bombard the cathodoluminescent phosphor anode. To ensure against unwanted anode currents, electron blocking junction elements can be incorporated on either side or both sides of the channel and positioned over a widened gate electrode, such that they are commonly gated along with the channel to respond to a single control voltage input to the gate electrode. Further, such emitter structures can incorporate a thin near mono-molecular film of a high secondary electron emission material on the surface of the electron emissive layer, to generally enhance the level of electron emissions from the emitter.

Abstract translation: 为了用于阴极发光场发射显示装置，反向场效应晶体管的门控沟道层用作平坦膜表面传导阴极发射极的电子发射层。 在这样的发射体中，当使电流与薄膜的表面平行地流过薄膜时，从平坦的发光薄膜的表面发射电子。 由施加到晶体管的栅极的可变电压源引起的电场可以控制沟道层的导电性，从而控制来自阴极发射极结构的电子发射的水平。 在一个变型中，场效应晶体管被构造为具有两层结构，其在操作期间被设计成在晶体管的表面附近保持导通。 结果，该装置将电子推向暴露表面，然后它们可以从沟道层逸出，以轰击阴极发光磷光体阳极。 为了确保防止不需要的阳极电流，电子阻挡接合元件可以结合在通道的任一侧或两侧并且定位在加宽的栅电极上，使得它们通常与通道一起选通以响应单个控制电压输入 栅电极。 此外，这种发射极结构可以在电子发射层的表面上并入高二次电子发射材料的薄的近分子膜，从而通常增强从发射极发射的电子的水平。

公开(公告)号：US5631196A

公开(公告)日：1997-05-20

申请号：US385027

申请日：1995-02-07

Applicant: Robert C. Kane ,  Xiaodong T. Zhu

Inventor： Robert C. Kane ,  Xiaodong T. Zhu

IPC: H01J1/308 ,  H01L21/465

CPC classification number: H01J1/308

Abstract: An electron source including selectively impurity doped semiconductor diamond wherein regions of selectively impurity doped regions are inverted with respect to the charge carrier population to provide a conductive path traversed by electrons subsequently emitted into a free-space region from the electron emitter. An inversion mode electron emission device including a selectively impurity doped semiconductor diamond electron emitter, for emitting electrons; a control electrode; and an anode for collecting emitted electrons wherein operation of the device relies on the inducement of an inversion region to facilitate electron transit to an electron emitting surface of the electron emitter.

Abstract translation: 包括选择性杂质掺杂的半导体金刚石的电子源，其中选择性杂质掺杂区域的区域相对于电荷载流子群反转，以提供随后从电子发射体发射到自由空间区域的电子穿过的导电路径。 一种反相模式电子发射装置，包括用于发射电子的选择性掺杂杂质的半导体金刚石电子发射体; 控制电极; 以及用于收集发射电子的阳极，其中器件的操作依赖于反转区域的诱导以促进电子转移到电子发射器的电子发射表面。

公开(公告)号：US5463275A

公开(公告)日：1995-10-31

申请号：US911581

申请日：1992-07-10

Applicant: Chung-Hsu Chen ,  Huan-Chun Yen

Inventor： Chung-Hsu Chen ,  Huan-Chun Yen

IPC: H01J1/308 ,  H01J1/30

CPC classification number: H01J1/308

Abstract: This invention discloses an emitter for a vacuum microelectronic device. The emitter includes a heterojunction step-doped barrier comprised of a first gallium arsenide region, an aluminum gallium arsenide region adjacent the first gallium arsenide region, and a second gallium arsenide region adjacent the aluminum gallium region and opposite to the first gallium arsenide region. The first gallium arsenide region includes a layer of heavily doped n-type gallium arsenide. The aluminum gallium arsenide region includes an intrinsic layer and a heavily doped p-type layer. The second gallium arsenide region includes a heavily doped p-type layer adjacent the aluminum gallium arsenide region, an intrinsic layer and a heavily doped n-type layer adjacent a vacuum region. In addition, a graded layer between the first gallium arsenide layer region and the aluminum gallium arsenide region is provided. Ohmic contacts are fabricated on the outer surfaces of the first gallium arsenide layer and the second gallium arsenide layer. An appropriate potential is applied across the ohmic contacts such that most of the electrons from the first gallium arsenide region have enough kinetic energy to transcend the vacuum barrier potential and be emitted into the vacuum region.

Abstract translation: 本发明公开了一种用于真空微电子器件的发射器。 发射极包括由第一砷化镓区域，与第一砷化镓区域相邻的砷化镓砷化镓区域和与铝镓区域相邻并与第一砷化镓区域相对的第二砷化镓区域的异质结阶跃掺杂势垒。 第一砷化镓区域包括重掺杂的n型砷化镓的层。 砷化镓铝区域包括本征层和重掺杂的p型层。 第二砷化镓区域包括与砷化铝砷化镓区域相邻的重掺杂p型层，邻近真空区域的本征层和重掺杂的n型层。 此外，提供了在第一砷化镓层区域和砷化镓镓区域之间的渐变层。 在第一砷化镓层和第二砷化镓层的外表面上制造欧姆接触。 在欧姆接触之间施加适当的电势，使得来自第一砷化镓区域的大部分电子具有足够的动能来超越真空势垒电位并被发射到真空区域。

公开(公告)号：US5430348A

公开(公告)日：1995-07-04

申请号：US276879

申请日：1994-07-18

Applicant: Robert C. Kane ,  Xiaodong T. Zhu

Inventor： Robert C. Kane ,  Xiaodong T. Zhu

IPC: H01J1/304 ,  H01J1/308 ,  H01J1/30

CPC classification number: H01J1/308

Abstract: An electron source including selectively impurity doped semiconductor diamond wherein regions of selectively impurity doped regions are inverted with respect to the charge carrier population to provide a conductive path traversed by electrons subsequently emitted into a free-space region from the electron emitter. An inversion mode electron emission device including a selectively impurity doped semiconductor diamond electron emitter, for emitting electrons; a control electrode; and an anode for collecting emitted electrons wherein operation of the device relies on the inducement of an inversion region to facilitate electron transit to an electron emitting surface of the electron emitter.

Abstract translation: 包括选择性杂质掺杂的半导体金刚石的电子源，其中选择性杂质掺杂区域的区域相对于电荷载流子群反转，以提供随后从电子发射体发射到自由空间区域的电子穿过的导电路径。 一种反相模式电子发射装置，包括用于发射电子的选择性掺杂杂质的半导体金刚石电子发射体; 控制电极; 以及用于收集发射电子的阳极，其中器件的操作依赖于反转区域的诱导以促进电子转移到电子发射器的电子发射表面。