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    Chamber isolation valve RF grounding
    81.
    发明授权
    Chamber isolation valve RF grounding 有权
    室内隔离阀RF接地

    公开(公告)号：US07469715B2

    公开(公告)日：2008-12-30

    申请号：US11174229

    申请日：2005-07-01

    Applicant: Ke Ling Lee ,  Shinichi Kurita ,  Emanuel Beer

    Inventor： Ke Ling Lee ,  Shinichi Kurita ,  Emanuel Beer

    IPC: H01J37/32

    CPC classification number: F16K3/0227 ,  F16K51/02 ,  H01J37/32844 ,  H01J2237/166 ,  H01L21/67126 ,  Y02C20/30 ,  Y02P70/605 ,  Y10S277/919 ,  Y10S277/92 ,  Y10T137/8242

    Abstract: A method and apparatus for grounding a chamber isolation valve are provided. Generally, the method makes use of an electrically conductive elastomeric member or members to effectively ground a chamber isolation valve and/or isolation valve door while avoiding metal-to-metal contact between moving parts in the processing system. In one embodiment, the elastomeric member is attached to and in electrical communication with the door of the chamber isolation valve. The elastomeric member is brought into contact with a grounded component of the plasma processing system when the door is in the closed position. In another embodiment, the conductive elastomeric member is attached to a bracing member of the isolation valve and is brought into contact with a grounded component of the plasma processing system when the bracing member is deployed to hold the isolation valve door in place during substrate processing. Other configurations are also provided.

    Abstract translation: 提供了一种用于使室隔离阀接地的方法和装置。 通常，该方法利用导电弹性体构件来有效地将室隔离阀和/或隔离阀门接地，同时避免处理系统中移动部件之间的金属与金属的接触。 在一个实施例中，弹性体构件附接到腔室隔离阀的门并且与腔室隔离阀的门电连通。 当门处于关闭位置时，弹性体构件与等离子体处理系统的接地部件接触。 在另一个实施例中，当支撑构件展开以在衬底处理期间将隔离阀门保持在适当位置时，导电弹性构件附接到隔离阀的支撑构件并与等离子体处理系统的接地构件接触。 还提供其他配置。

    EXHAUST ASSEMBLY FOR A PLASMA PROCESSING SYSTEM
    82.
    发明申请
    EXHAUST ASSEMBLY FOR A PLASMA PROCESSING SYSTEM 有权
    用于等离子体处理系统的排气装置

    公开(公告)号：US20080295964A1

    公开(公告)日：2008-12-04

    申请号：US12196670

    申请日：2008-08-22

    Applicant: Hiroyuki Takahashi

    Inventor： Hiroyuki Takahashi

    IPC: C23F1/08

    CPC classification number: H01L21/67069 ,  H01J37/32844 ,  Y02C20/30 ,  Y02P70/605

    Abstract: An exhaust assembly is described for use in a plasma processing system, whereby secondary plasma is formed in the exhaust assembly between the processing space and chamber exhaust ports in order to reduce plasma leakage to a vacuum pumping system, or improve the uniformity of the processing plasma, or both. The exhaust assembly includes a powered exhaust plate in combination with a ground electrode is utilized to form the secondary plasma surrounding a peripheral edge of a substrate treated in the plasma processing system.

    Abstract translation: 描述了用于等离子体处理系统的排气组件，由此在处理空间和室排气口之间的排气组件中形成二次等离子体，以便减少对真空泵系统的等离子体泄漏，或提高处理等离子体的均匀性 ， 或两者。 排气组件包括与接地电极组合的动力排气板用于形成围绕在等离子体处理系统中处理的衬底的周边边缘的次级等离子体。

    Plasma treatment of processing gases
    84.
    发明申请
    Plasma treatment of processing gases 审中-公开
    处理气体的等离子体处理

    公开(公告)号：US20040131513A1

    公开(公告)日：2004-07-08

    申请号：US10740335

    申请日：2003-12-17

    Applicant: Applied Materials, Inc.

    Inventor： Stela Diamant Lazarovich ,  Avner Rosenberg ,  Joseph Shiloh ,  Joseph Statlender ,  Elhanan Wurzberg

    IPC: B01J019/08 ,  B01J019/12

    CPC classification number: H01J37/32844 ,  B01D53/326 ,  H01J37/32009 ,  H01J37/32348 ,  H05H1/2406 ,  H05H2001/2462 ,  Y02C20/30

    Abstract: The present invention provides a DBD cell (500) including ring shaped electrodes (512 and 514) that are positioned side-by-side on a dielectric tube (516). An AC power supply (518) is provided such that the cell and the power supply form a DBD treatment device (540) for abatement of noxious gases for example FCs that can be discharged from semiconductor fabricating devices. Additionally, one or more sensors (822) and/or one or more gas addition ports (816) can be included in a DBD cell (800) of the present invention. Several DBD cells (1030, 1036 and 1042) of the present invention can be combined to form a DBD reactor (1010) of the present invention. AC power supplies (1012, 1014 and 1016) are utilized to energize the cells (1030, 1036 and 1042), forming a novel noxious gas treatment device (1000) wherein plasmas are created when gas is present inside the reactor. A DBD treatment device (1314) of the present invention can be operably connected to the gas discharge system of a semiconductor fabricating device (1310), forming a novel semiconductor processing system. Furthermore, DBD devices of the present invention (1714) can be utilized to form fluorine species for use in chemical processing methods, techniques and devices including wafer fabricating devices (1718). Additionally, DBD treatment devices of the present invention (1540, 1542 and 1544) can be integrated with vacuum pump stages (1520, 1522, 1524, 1526 and 1528) to form a novel pump integrated DBD treatment apparatus (1500).

    Abstract translation: 本发明提供了一种包括环形电极（512和514）的DBD电池（500），它们并排设置在电介质管（516）上。 提供AC电源（518），使得电池和电源形成用于减少有害气体（例如可从半导体制造装置放电的FC）的DBD处理装置（540）。 另外，在本发明的DBD单元（800）中可以包括一个或多个传感器（822）和/或一个或多个气体添加端口（816）。 本发明的几个DBD细胞（1030,1036和1042）可以组合形成本发明的DBD反应器（1010）。 交流电源（1012,1014和1016）用于激励电池（1030,1036和1042），形成新的有害气体处理装置（1000），其中当气体存在于反应器内部时产生等离子体。 本发明的DBD处理装置（1314）可以可操作地连接到半导体制造装置（1310）的气体放电系统，形成新颖的半导体处理系统。 此外，本发明的DBD装置（1714）可用于形成用于化学处理方法，包括晶片制造装置（1718）的技术和装置的氟物质。 此外，本发明的DBD处理装置（1540,1542和1544）可以与真空泵级（1520,1522,1524,1526和1528）集成，以形成新颖的泵集成DBD处理装置（1500）。

    Method of avoiding or eliminating deposits in the exhaust area of a vacuum system
    86.
    发明申请
    Method of avoiding or eliminating deposits in the exhaust area of a vacuum system 失效
    避免或消除真空系统排气区域沉积物的方法

    公开(公告)号：US20030019506A1

    公开(公告)日：2003-01-30

    申请号：US10202773

    申请日：2002-07-24

    Inventor： Bernd Kutsch ,  Franz Laermer

    IPC: C25F001/00 ,  B44C001/22

    CPC classification number: H01J37/32844 ,  B08B7/00 ,  B08B17/00 ,  H01L21/3065 ,  Y02C20/30 ,  Y02P70/605

    Abstract: Method of avoiding or eliminating deposits in the exhaust area of a vacuum system in which a gas containing depositable constituents in the exhaust area is at least intermittently pumped out of a vacuum chamber that is connected to a vacuum pump via a gas line. A reactive gas that removes deposits from the gas in the vacuum pump and/or units provided downstream therefrom, and/or reduces or eliminates existing deposits in this area is at least intermittently added to the gas directly upstream from or within the vacuum pump. The proposed method is particularly suitable for anisotropic plasma etching of silicon using alternating etching steps and polymerization steps, the vacuum chamber being supplied with a sulfur-containing etching gas during the etching steps and a polymerizing agent-containing gas during the polymerization steps.

    Abstract translation: 在真空系统的排气区域中避免或消除沉积物的方法，其中含有排气区域中的可沉积成分的气体至少间歇地从通过气体管线连接到真空泵的真空室泵出。 从真空泵和/或真空泵的上游直接上游的气体中至少间歇地加入反应性气体，该气体从真空泵和/或设置在其下游的单元中的气体中除去沉积物和/或减少或消除了该区域中的现有沉积物。 所提出的方法特别适用于使用交替蚀刻步骤和聚合步骤的硅的各向异性等离子体蚀刻，在聚合步骤期间在蚀刻步骤期间在真空室中提供含硫蚀刻气体和含聚合剂的气体。

    Apparatus for making exhaust gas non-toxic
    88.
    发明授权
    Apparatus for making exhaust gas non-toxic 失效
    废气排放装置无毒

    公开(公告)号：US06315819B1

    公开(公告)日：2001-11-13

    申请号：US09643156

    申请日：2000-08-21

    Applicant: Masatoshi Tokushima

    Inventor： Masatoshi Tokushima

    IPC: B03C100

    CPC classification number: H01J37/32844 ,  C23F4/00 ,  H01L21/32136 ,  Y02C20/30 ,  Y02P70/605

    Abstract: There is provided a method of dry etching a nickel film formed on a substrate by means of plasma of an etching gas, wherein the etching gas includes at least one of CO and CO2 gases, and the substrate is designed to keep a temperature in the range of −25° C. to 40° C. both inclusive, while the substrate is being etched. For instance, the etching gas is a mixture gas including CO and CO2 gases, a mixture gas including CO, CO2 and H2 gases, or a mixture gas including CO and H2 gases. The above-mentioned method provides higher etching accuracy, higher etching rate, and less etching damage in a substrate.

    Abstract translation: 提供了通过蚀刻气体的等离子体对形成在基板上的镍膜进行干蚀刻的方法，其中蚀刻气体包括CO和CO 2气体中的至少一种，并且基板被设计成将温度保持在范围内 在-25℃至40℃之间，同时衬底被蚀刻。 例如，蚀刻气体是包括CO和CO 2气体的混合气体，包括CO，CO 2和H 2气体的混合气体，或包括CO和H 2气体的混合气体。 上述方法提供了更高的蚀刻精度，更高的蚀刻速率和较少的基板蚀刻损伤。

    Method of treating active material
    89.
    发明授权
    Method of treating active material 失效
    活性物质处理方法

    公开(公告)号：US6156657A

    公开(公告)日：2000-12-05

    申请号：US637410

    申请日：1996-04-25

    Applicant: Hideshi Kuwabara ,  Yasushi Kawasumi ,  Tetsuo Asaba ,  Kenji Makino ,  Yuzo Kataoka ,  Yasuhiro Sekine ,  Shigeru Nishimura

    Inventor： Hideshi Kuwabara ,  Yasushi Kawasumi ,  Tetsuo Asaba ,  Kenji Makino ,  Yuzo Kataoka ,  Yasuhiro Sekine ,  Shigeru Nishimura

    IPC: B01D53/72 ,  C23C16/44 ,  H01J37/32 ,  H01L21/44

    CPC classification number: H01J37/3244 ,  B01D53/72 ,  C23C16/4412 ,  H01J37/32844 ,  Y02C20/30

    Abstract: An active substance treating method is characterized in that an active substance is caused to react with an inactivating substance in an exhaust system for a thin film forming apparatus. A thin film forming apparatus includes a common chamber having a region where plasma CVD is carried out and a region where thermal CVD is carried out, a device provided in the chamber for pressing a substrate onto a holder, a lamp for illuminating light having a component of a wavelength of 1 .mu.m or above to heat the substrate, an introducing port for separately introducing two active substances to a vicinity of the substrate, a vaporizing device in which at least two bubblers are series-connected to vaporize the active substances, and an exhaust system which is divided into two systems each of which has a heater and which has a port for introducing an inactivating substance into an exhaust pump.

    Abstract translation: 活性物质处理方法的特征在于使活性物质与用于薄膜形成装置的排气系统中的灭活物质反应。 薄膜形成装置包括具有进行等离子体CVD的区域和进行热CVD的区域的公共室，设置在用于将基板按压到保持器上的室中的装置，用于照射具有成分 波长1μm以上的加热用基板，将两个活性物质分别引入到基板附近的引入口，将至少两个起泡器串联连接以蒸发活性物质的汽化装置，以及 排气系统，其被分成两个系统，每个系统具有加热器，并且具有用于将灭活物质引入排气泵的端口。

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