Thin-film transistor and method of making same

    公开(公告)号:US20030164520A1

    公开(公告)日:2003-09-04

    申请号:US10377732

    申请日:2003-03-04

    Applicant: LG LCD Inc.

    Abstract: A thin-film transistor includes a substrate, and a gate including a double-layered structure having first and second metal layers provided on the substrate, the first metal layer being wider than the second metal layer by 1 to 4 nullm. A method of making such a thin-film transistor includes the steps of: depositing a first metal layer on a substrate, depositing a second metal layers directly on the first metal layer; forming a photoresist having a designated width on the second metal layer; patterning the second metal layer via isotropic etching using the photoresist as a mask; patterning the first metal layer by means of an anisotropic etching using the photoresist as a mask, the first metal layer being etched to have the designated width, thus forming a gate having a laminated structure of the first and second metal layers; and removing the photoresist.

    Liquid crystal display having only one common line in peripheral region
of substrate
    2.
    发明授权
    Liquid crystal display having only one common line in peripheral region of substrate 有权
    液晶显示器在基板的周边区域中仅具有一条公共线

    公开(公告)号:US6052167A

    公开(公告)日:2000-04-18

    申请号:US246916

    申请日:1999-02-09

    Applicant: In Duk Song

    Inventor: In Duk Song

    Abstract: A liquid crystal display includes a first substrate having a plurality of pixel electrodes arranged in a matrix, a plurality of row terminals and common electrode terminals arranged on one side of two adjacent sides of the first substrate, a plurality of column terminals and common electrode terminals arranged on the other side of the two adjacent sides of the first substrate; a second substrate arranged to be opposite to the first substrate and to interpose a liquid crystal display with the first substrate and having a counter electrode for performing liquid crystal display by applying a voltage across the pixel electrodes and the counter electrode. The conductive region being connected to at least one of the common electrode terminals to apply a common potential to the counter electrode. Instead of using a common drive circuit, a single conductive region is formed along only a single one of the two remaining sides of the first substrate so as to allow for measuring of at least one of a voltage drop and a voltage signal delay occurring at a substantially central portion of the matrix.

    Abstract translation: 液晶显示器包括:具有排列成矩阵状的多个像素电极的第一基板,配置在第一基板的两个相邻侧的一侧的多个行端子和公共电极端子,多个列端子和公共电极端子 布置在第一基板的两个相邻侧的另一侧上; 第二基板,被布置成与第一基板相对,并且将液晶显示器与第一基板插入并且具有用于通过在像素电极和对电极两端施加电压来进行液晶显示的对电极。 导电区域连接到公共电极端子中的至少一个,以向对电极施加公共电位。 代替使用公共驱动电路,仅沿着第一基板的两个剩余侧中的单个导体区域形成单个导电区域,以便能够测量在第一基板的电压降和电压信号延迟中的至少一个 基体的大致中心部分。

    Structure of a pad in a liquid crystal display device and a method for manufacturing thereof
    3.
    发明授权
    Structure of a pad in a liquid crystal display device and a method for manufacturing thereof 有权
    液晶显示装置中的焊盘的结构及其制造方法

    公开(公告)号:US07009676B1

    公开(公告)日:2006-03-07

    申请号:US09317719

    申请日:1999-05-24

    Applicant: Jeom Jae Kim

    Inventor: Jeom Jae Kim

    CPC classification number: G02F1/13458 G02F1/1345 G02F2201/121

    Abstract: An LCD is constructed such that a side edge of a common electrode disposed on an entire surface of an upper substrate and a pad disposed on the lower substrate facing the upper substrate are not overlapped. The LCD includes an active panel having a gate pad and a source pad spaced at a predetermined distance D from the edge of the color filter panel which faces the active panel.

    Abstract translation: LCD被构造为使得设置在上基板的整个表面上的公共电极的侧边缘和布置在下基板上面对上基板的焊盘不重叠。 LCD包括有源面板,其具有栅极焊盘和与滤色器面板的面向有源面板的边缘隔开预定距离D的源极焊盘。

    Thin-film transistor and method of making same

    公开(公告)号:US20020140034A1

    公开(公告)日:2002-10-03

    申请号:US10154955

    申请日:2002-05-28

    Applicant: LG LCD INC.

    Abstract: A thin-film transistor includes a substrate, and a gate including a double-layered structure having first and second metal layers provided on the substrate, the first metal layer being wider than the second metal layer by 1 to 4 nullm. A method of making such a thin-film transistor includes the steps of: depositing a first metal layer on a substrate, depositing a second metal layers directly on the first metal layer; forming a photoresist having a designated width on the second metal layer; patterning the second metal layer via isotropic etching using the photoresist as a mask; patterning the first metal layer by means of an anisotropic etching using the photoresist as a mask, the first metal layer being etched to have the designated width, thus forming a gate having a laminated structure of the first and second metal layers; and removing the photoresist.

    Liquid crystal display having only one common line extending along the
edge of substrate without connection pads
    6.
    发明授权
    Liquid crystal display having only one common line extending along the edge of substrate without connection pads 有权
    液晶显示器只有一条公共线沿衬底的边缘延伸而没有连接焊盘

    公开(公告)号:US6049368A

    公开(公告)日:2000-04-11

    申请号:US158466

    申请日:1998-09-22

    Applicant: In Duk Song

    Inventor: In Duk Song

    Abstract: A liquid crystal display includes a first substrate having a plurality of pixel electrodes arranged in a matrix, a plurality of row terminals and common electrode terminals arranged on one side of two adjacent sides of the first substrate, a plurality of column terminals and common electrode terminals arranged on the other side of the two adjacent sides of the first substrate; a second substrate arranged to be opposite to the first substrate and to interpose a liquid crystal display with the first substrate and having a counter electrode for performing liquid crystal display by applying a voltage across the pixel electrodes and the counter electrode. The conductive region being connected to at least one of the common electrode terminals to apply a common potential to the counter electrode. Instead of using a common drive circuit, a single conductive region is formed along only a single one of the two remaining sides of the first substrate so as to allow for measuring of at least one of a voltage drop and a voltage signal delay occurring at a substantially central portion of the matrix.

    Abstract translation: 液晶显示器包括:具有排列成矩阵状的多个像素电极的第一基板,配置在第一基板的两个相邻侧的一侧的多个行端子和公共电极端子,多个列端子和公共电极端子 布置在第一基板的两个相邻侧的另一侧上; 第二基板,被布置成与第一基板相对,并且将液晶显示器与第一基板插入并且具有用于通过在像素电极和对电极两端施加电压来进行液晶显示的对电极。 导电区域连接到公共电极端子中的至少一个,以向对电极施加公共电位。 代替使用公共驱动电路,仅沿着第一基板的两个剩余侧中的单个导体区域形成单个导电区域,以便能够测量在第一基板的电压降和电压信号延迟中的至少一个 基体的大致中心部分。

    Method of forming an electrode on a substrate of a semiconductor device
    9.
    发明授权
    Method of forming an electrode on a substrate of a semiconductor device 有权
    在半导体器件的基板上形成电极的方法

    公开(公告)号:US6048783A

    公开(公告)日:2000-04-11

    申请号:US282976

    申请日:1999-03-31

    CPC classification number: H01L29/42384 H01L21/28008 H01L21/32135

    Abstract: A double-layered electrode layer is formed on a substrate according to a process in which lower and upper electrode layer forming materials are deposited on a substrate in this order, then a lower photoresist pattern is formed on the upper electrode layer forming material. Next, the lower and upper electrode layer forming materials are isotropically etched to obtain lower and upper electrode layers, after which the upper electrode layer is anisotropically etched such that a width of the upper electrode layer becomes less than that of the lower electrode layer.

    Abstract translation: 根据以下工序,在基板上形成双层电极层,其中下电极层形成材料和上电极层形成材料依次沉积在基板上,然后在上电极层形成材料上形成下光致抗蚀剂图案。 接下来,对上下电极层形成材料进行各向同性蚀刻以获得下电极层和上电极层,之后对上电极层进行各向异性蚀刻,使得上电极层的宽度变得小于下电极层的宽度。

    Thin-film transistor and method of making same
    10.
    发明申请
    Thin-film transistor and method of making same 无效
    薄膜晶体管及其制造方法

    公开(公告)号:US20040229413A1

    公开(公告)日:2004-11-18

    申请号:US10872527

    申请日:2004-06-22

    Applicant: LG LCD Inc.

    Abstract: A thin-film transistor includes a substrate, and a gate including a double-layered structure having first and second metal layers provided on the substrate, the first metal layer being wider than the second metal layer by 1 to 4 nullm. A method of making such a thin-film transistor includes the steps of: depositing a first metal layer on a substrate, depositing a second metal layers directly on the first metal layer; forming a photoresist having a designated width on the second metal layer; patterning the second metal layer via isotropic etching using the photoresist as a mask; patterning the first metal layer by means of an anisotropic etching using the photoresist as a mask, the first metal layer being etched to have the designated width, thus forming a gate having a laminated structure of the first and second metal layers; and removing the photoresist.

    Abstract translation: 薄膜晶体管包括基板和包括具有设置在基板上的第一和第二金属层的双层结构的栅极,第一金属层比第二金属层宽1至4微米。 制造这种薄膜晶体管的方法包括以下步骤:在衬底上沉积第一金属层,将第二金属层直接沉积在第一金属层上; 在所述第二金属层上形成具有指定宽度的光致抗蚀剂; 通过使用光致抗蚀剂作为掩模的各向同性蚀刻图案化第二金属层; 通过使用光致抗蚀剂作为掩模的各向异性蚀刻图案化第一金属层,第一金属层被蚀刻成具有指定的宽度,从而形成具有第一和第二金属层的层叠结构的栅极; 并去除光致抗蚀剂。

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