公开(公告)号：US20030164520A1

公开(公告)日：2003-09-04

申请号：US10377732

申请日：2003-03-04

Applicant: LG LCD Inc.

Inventor： Byung-Chul Ahn ,  Hyun-Sik Seo

IPC: H01L027/01

CPC classification number: H01L29/42384 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78636

Abstract: A thin-film transistor includes a substrate, and a gate including a double-layered structure having first and second metal layers provided on the substrate, the first metal layer being wider than the second metal layer by 1 to 4 nullm. A method of making such a thin-film transistor includes the steps of: depositing a first metal layer on a substrate, depositing a second metal layers directly on the first metal layer; forming a photoresist having a designated width on the second metal layer; patterning the second metal layer via isotropic etching using the photoresist as a mask; patterning the first metal layer by means of an anisotropic etching using the photoresist as a mask, the first metal layer being etched to have the designated width, thus forming a gate having a laminated structure of the first and second metal layers; and removing the photoresist.

公开(公告)号：US20040229413A1

公开(公告)日：2004-11-18

申请号：US10872527

申请日：2004-06-22

Applicant: LG LCD Inc.

Inventor： Byung-Chul Ahn ,  Hyun-Sik Seo

IPC: H01L021/00 ,  H01L021/84 ,  H01L021/3205

CPC classification number: H01L29/42384 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78636

Abstract: A thin-film transistor includes a substrate, and a gate including a double-layered structure having first and second metal layers provided on the substrate, the first metal layer being wider than the second metal layer by 1 to 4 nullm. A method of making such a thin-film transistor includes the steps of: depositing a first metal layer on a substrate, depositing a second metal layers directly on the first metal layer; forming a photoresist having a designated width on the second metal layer; patterning the second metal layer via isotropic etching using the photoresist as a mask; patterning the first metal layer by means of an anisotropic etching using the photoresist as a mask, the first metal layer being etched to have the designated width, thus forming a gate having a laminated structure of the first and second metal layers; and removing the photoresist.

Abstract translation: 薄膜晶体管包括基板和包括具有设置在基板上的第一和第二金属层的双层结构的栅极，第一金属层比第二金属层宽1至4微米。 制造这种薄膜晶体管的方法包括以下步骤：在衬底上沉积第一金属层，将第二金属层直接沉积在第一金属层上; 在所述第二金属层上形成具有指定宽度的光致抗蚀剂; 通过使用光致抗蚀剂作为掩模的各向同性蚀刻图案化第二金属层; 通过使用光致抗蚀剂作为掩模的各向异性蚀刻图案化第一金属层，第一金属层被蚀刻成具有指定的宽度，从而形成具有第一和第二金属层的层叠结构的栅极; 并去除光致抗蚀剂。

公开(公告)号：US20040266189A1

公开(公告)日：2004-12-30

申请号：US10899014

申请日：2004-07-27

Applicant: LG LCD Inc. ,  Jin Jang

Inventor： Jin Jang ,  Soo-Young Yoon ,  Jae-Young Oh ,  Woo-Sung Shon ,  Seong-Jin Park

IPC: H01L021/461 ,  H01L021/00 ,  H01L021/84 ,  H01L021/302

CPC classification number: H01L21/02672 ,  C30B1/023 ,  C30B29/06 ,  H01J37/32009 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022 ,  Y10T117/10 ,  Y10T117/1008

Abstract: The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, and a heater at the substrate support wherein the heater supplies the substrate with heat.

公开(公告)号：US20020140034A1

公开(公告)日：2002-10-03

申请号：US10154955

申请日：2002-05-28

Applicant: LG LCD INC.

Inventor： Byung-Chul Ahn ,  Hyun-Sik Seo

IPC: H01L031/0392 ,  H01L027/12 ,  H01L027/01 ,  H01L021/84 ,  H01L021/00

CPC classification number: H01L29/42384 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78636

Abstract: A thin-film transistor includes a substrate, and a gate including a double-layered structure having first and second metal layers provided on the substrate, the first metal layer being wider than the second metal layer by 1 to 4 nullm. A method of making such a thin-film transistor includes the steps of: depositing a first metal layer on a substrate, depositing a second metal layers directly on the first metal layer; forming a photoresist having a designated width on the second metal layer; patterning the second metal layer via isotropic etching using the photoresist as a mask; patterning the first metal layer by means of an anisotropic etching using the photoresist as a mask, the first metal layer being etched to have the designated width, thus forming a gate having a laminated structure of the first and second metal layers; and removing the photoresist.