公开(公告)号：US5055421A

公开(公告)日：1991-10-08

申请号：US458716

申请日：1990-02-05

Applicant: Siegfried Birkle ,  Johann Kammermaier ,  Rolf Schulte ,  Albrecht Winnacker ,  Gerhard Rittmayer

Inventor： Siegfried Birkle ,  Johann Kammermaier ,  Rolf Schulte ,  Albrecht Winnacker ,  Gerhard Rittmayer

IPC: B01J19/08 ,  C23C16/00 ,  C23C16/26 ,  H01L21/205 ,  H01L21/365 ,  H01L29/16

CPC classification number: H01L21/02527 ,  C23C16/26 ,  H01L21/02592 ,  H01L21/0262 ,  H01L29/1604

Abstract: The invention provides a method for making a new semiconductor base material comprising thin layers of amorphous, hydrogenous carbon (a-c:H) with a specific electrical resistance of between 10.sup.1 and 10.sup.8 .OMEGA..cm and a charge carrier concentration (n+p) of between 10.sup.10 and 10.sup.18 cm.sup.-3, respectively at room temperature. The new semiconductor base material can be manufactured in thin layer technology with the application of band processes and exhibits a charge carrier mobility of at least 1 cm.sup.2.v.sup.-1.s.sup.-1.

Abstract translation: PCT No.PCT / EP88 / 00526 Sec。 371 1990年2月5日第 102（e）日期1990年2月5日PCT提交1988年6月14日PCT公布。 出版物WO89 / 01237 日期：1989年2月9日。本发明提供了一种制备新的半导体基材的方法，该半导体基材包含非晶态氢（ac：H）薄层，其电阻介于101和108欧姆计之间，电荷载流子浓度 （n + p）分别为1010至1018cm-3。 新的半导体基底材料可以通过应用带状工艺在薄层技术中制造并且表现出至少1cm2.v-1.s-1的载流子迁移率。

公开(公告)号：US20060163538A1

公开(公告)日：2006-07-27

申请号：US11298722

申请日：2005-12-09

Applicant: Gabi Schierning ,  Miroslaw Batentschuk ,  Andres Osvet ,  Albrecht Winnacker ,  Luc Struye ,  Johan Lamotte ,  Jean-Pierre Tahon ,  Paul Leblans

Inventor： Gabi Schierning ,  Miroslaw Batentschuk ,  Andres Osvet ,  Albrecht Winnacker ,  Luc Struye ,  Johan Lamotte ,  Jean-Pierre Tahon ,  Paul Leblans

IPC: C09K11/08

CPC classification number: G21K4/00 ,  G21K2004/06

Abstract: In a storage phosphor sheet, plate or panel, comprising a needle-shaped storage or photostimulable phosphor, said needle-shaped phosphor comprising a host or matrix compound and a dopant or activator compound or element in an amount of less than 0.01 mole % versus said host or matrix compound, said needle-shaped phosphor further comprises, as inclusions or precipitates, particles having a size in the range from 10−3 μm up to 10 μm, wherein said particles are present as ferroelectric particles, providing said panel with ferro-electric properties.

Abstract translation: 在包含针状储存或可光刺激的荧光体的存储荧光体片，板或面板中，所述针状荧光体包含主体或基质化合物，并且掺杂剂或活化剂化合物或元素的量小于0.01摩尔％ 主体或基质化合物，所述针状荧光体还包含作为夹杂物或沉淀物的粒径在10 -3μm至10μm以下的颗粒，其中所述颗粒以铁电粒子形式存在 ，为所述面板提供铁电性能。

公开(公告)号：US4872759A

公开(公告)日：1989-10-10

申请号：US216134

申请日：1988-07-07

Applicant: Eva-M. Stich-Baumeister ,  Karl-Otto Dohnke ,  Albrecht Winnacker

Inventor： Eva-M. Stich-Baumeister ,  Karl-Otto Dohnke ,  Albrecht Winnacker

IPC: G01N21/77 ,  G01N21/78 ,  G02B6/12 ,  G02B6/42 ,  G01N21/00

CPC classification number: G02B6/42 ,  G01N21/7703 ,  G02B6/12004 ,  G02B6/4295 ,  G01N21/783 ,  G01N2201/0622

Abstract: A sensor for gases or ions with a light source, a detector and a sensor layer all of which are attached to a carrier. A thin sensor film, the absorptivity of which changes through the action of the measurement medium, is arranged on a light waveguide, the one flat side of which covers a flat end face of the light source, the end face of the carrier and a plane receiving surface of the detector. Thus, a sensitive sensor, especially for gases, is obtained in which the sensor layer, the light source and the detector form an integrated structural unit.

Abstract translation: 用于具有光源，检测器和传感器层的气体或离子的传感器，所有这些传感器都附接到载体。 通过测量介质的作用改变其吸收率的薄传感器膜布置在光波导上，该光波导的一个平坦侧覆盖光源的平坦端面，载体的端面和平面 接收表面。 因此，获得特别是用于气体的敏感传感器，其中传感器层，光源和检测器形成一体化的结构单元。

公开(公告)号：US20110081549A1

公开(公告)日：2011-04-07

申请号：US12736312

申请日：2009-03-26

Applicant: Shunro Nagata ,  Albrecht Winnacker ,  Boris M. Epelbaum ,  Matthias Bickermann ,  Octavian Filip ,  Paul Heimann

Inventor： Shunro Nagata ,  Albrecht Winnacker ,  Boris M. Epelbaum ,  Matthias Bickermann ,  Octavian Filip ,  Paul Heimann

IPC: C30B23/02 ,  C01B21/072

CPC classification number: C30B29/403 ,  C30B23/025 ,  Y10T428/2982

Abstract: An object of the present invention is to provide, even when a single crystal of a material other than AlN is used as a crystal, an AlN bulk single crystal having fewer defects and high quality, a method for producing such an AlN bulk single crystal, and a semiconductor device. A feature is to select, as a surface 1a of a hexagonal single crystal substrate serving as a seed crystal 1, a plane inclined at an angle of 10° to 80° with respect to the C-plane (FIG. 1(a)), and to grow an AlN single crystal 2 as a growth plane 2a on the surface 1a by a sublimation method (FIG. 1(b)).

Abstract translation: 本发明的目的在于，即使使用AlN以外的材料的单晶作为结晶，也可以提供缺陷少，质量好的AlN块体单晶，制造这种AlN体积单晶的方法， 和半导体器件。 特征在于，作为用作晶种1的六边形单晶衬底的表面1a选择相对于C面倾斜10°至80°的平面（图1（a）） 并且通过升华法在表面1a上生长作为生长面2a的AlN单晶2（图1（b））。

公开(公告)号：US5039358A

公开(公告)日：1991-08-13

申请号：US473577

申请日：1990-02-01

Applicant: Siegfried Birkle ,  Johann Kammermaier ,  Gerhard Schmidt ,  Albrecht Winnacker

Inventor： Siegfried Birkle ,  Johann Kammermaier ,  Gerhard Schmidt ,  Albrecht Winnacker

IPC: H01L21/312 ,  H01L21/56 ,  H01L23/29

CPC classification number: H01L23/29 ,  H01L21/56 ,  H01L2924/0002 ,  Y10S438/958

Abstract: The invention provides electroactive passivation layers for semiconductor components comprising a thin layer of amorphous, hydrogenated carbon.

Abstract translation: 本发明提供了用于半导体部件的电活性钝化层，其包括非晶形氢化碳薄层。