公开(公告)号：US4939882A

公开(公告)日：1990-07-10

申请号：US230354

申请日：1988-08-10

Applicant: Octavian Filip

Inventor： Octavian Filip

IPC: E04B1/19 ,  E04B1/342

CPC classification number: E04B1/1903 ,  E04B2001/1918 ,  E04B2001/1927 ,  E04B2001/1936 ,  E04B2001/1978

Abstract: In prefabricated pyramid-shaped structural members for the production of two-part grill frameworks, the diagonally running rods of each pyramid-shaped structural member are welded with their ends on a cover plate, which has a borehole for the passage of a fastening screw for a head member. Each head member includes a contact surface for the cover plate and is provided with a tapped borehole to receive the fastening screw, which connects the relevant joint member in each case with the cover plate. This screw connection is advantageously not undertaken until at the point of assembly of the grill framework.

Abstract translation: 在用于生产两部分格栅框架的预制金字塔形结构构件中，每个金字塔形结构构件的对角运行的杆被焊接在它们的端部在盖板上，该盖板具有用于通过紧固螺钉的钻孔， 一个头部成员 每个头部构件包括用于盖板的接触表面，并且设置有螺纹钻孔以接收紧固螺钉，其将每种情况下的相关接头构件与盖板连接。 有利的是，直到在格栅框架的组装点处，才能进行这种螺钉连接。

公开(公告)号：US20110081549A1

公开(公告)日：2011-04-07

申请号：US12736312

申请日：2009-03-26

Applicant: Shunro Nagata ,  Albrecht Winnacker ,  Boris M. Epelbaum ,  Matthias Bickermann ,  Octavian Filip ,  Paul Heimann

Inventor： Shunro Nagata ,  Albrecht Winnacker ,  Boris M. Epelbaum ,  Matthias Bickermann ,  Octavian Filip ,  Paul Heimann

IPC: C30B23/02 ,  C01B21/072

CPC classification number: C30B29/403 ,  C30B23/025 ,  Y10T428/2982

Abstract: An object of the present invention is to provide, even when a single crystal of a material other than AlN is used as a crystal, an AlN bulk single crystal having fewer defects and high quality, a method for producing such an AlN bulk single crystal, and a semiconductor device. A feature is to select, as a surface 1a of a hexagonal single crystal substrate serving as a seed crystal 1, a plane inclined at an angle of 10° to 80° with respect to the C-plane (FIG. 1(a)), and to grow an AlN single crystal 2 as a growth plane 2a on the surface 1a by a sublimation method (FIG. 1(b)).

Abstract translation: 本发明的目的在于，即使使用AlN以外的材料的单晶作为结晶，也可以提供缺陷少，质量好的AlN块体单晶，制造这种AlN体积单晶的方法， 和半导体器件。 特征在于，作为用作晶种1的六边形单晶衬底的表面1a选择相对于C面倾斜10°至80°的平面（图1（a）） 并且通过升华法在表面1a上生长作为生长面2a的AlN单晶2（图1（b））。