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公开(公告)号:US20060274804A1
公开(公告)日:2006-12-07
申请号:US11444414
申请日:2006-06-01
Applicant: Alex Behfar , Alfred Schremer
Inventor: Alex Behfar , Alfred Schremer
CPC classification number: H01S5/028 , H01S5/0203 , H01S5/0286 , H01S5/0287 , H01S5/1082 , H01S5/1085 , H01S5/18 , H01S5/22 , H01S2301/166
Abstract: An etched-facet single lateral mode semiconductor photonic device is fabricated by depositing an anti reflective coating on the etched facet, and depositing a reflectivity modifying coating in a spatially controlled manner to modify the spatial performance of the emitted beam.
Abstract translation: 蚀刻小面单横向半导体光子器件通过在蚀刻刻面上沉积抗反射涂层并以空间受控的方式沉积反射率修饰涂层来制造,以改变发射光束的空间性能。
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公开(公告)号:US20060270077A1
公开(公告)日:2006-11-30
申请号:US11497234
申请日:2006-08-02
Applicant: Alex Behfar , Malcolm Green , Alfred Schremer
Inventor: Alex Behfar , Malcolm Green , Alfred Schremer
IPC: H01L21/00
CPC classification number: H01S5/0264 , H01S5/005 , H01S5/02248 , H01S5/02284 , H01S5/02292 , H01S5/0262 , H01S5/0683 , H01S5/1085 , H01S5/18 , H01S5/2022 , H01S5/4012 , H01S5/4056 , H01S5/4087
Abstract: A laser (22) and detector (24) integrated on corresponding epitaxial layers of a single chip (20) cooperate with on-chip and/or external optics (62) to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber (60) and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels.
Abstract translation: 集成在单个芯片(20)的相应外延层上的激光器(22)和检测器(24)与片上和/或外部光学器件(62)配合,以将由激光器发射的第一波长的光耦合到单个外部 装置,例如光纤(60),并且将从外部装置接收的不同波长的光同时耦合到检测器以提供双向光子操作。 多个激光器和检测器可以集成在芯片上以提供多个双向通道。
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公开(公告)号:US20050123016A1
公开(公告)日:2005-06-09
申请号:US10963739
申请日:2004-10-14
Applicant: Alex Behfar , Alfred Schremer , Cristian Stagarescu
Inventor: Alex Behfar , Alfred Schremer , Cristian Stagarescu
IPC: H01S20060101 , H01S3/08 , H01S5/00 , H01S5/026 , H01S5/0683 , H01S5/10 , H01S5/125 , H01S5/14 , H01S5/18 , H01S5/22 , H01S5/223 , H01S5/40 , H01S5/42
CPC classification number: H01S5/0264 , H01S5/02284 , H01S5/026 , H01S5/0262 , H01S5/0267 , H01S5/0654 , H01S5/0683 , H01S5/1014 , H01S5/1085 , H01S5/125 , H01S5/141 , H01S5/18 , H01S5/22 , H01S5/2231 , H01S5/4012 , H01S5/42
Abstract: A surface-emitting laser, in which light is emitted vertically at one end from a near 45°-angled facet, includes a second end having a perpendicular facet from which light is emitted horizontally, for monitoring. The surface-emitting laser comprises a divergence-compensating lens on the surface above the near 45°-angled facet.
Abstract translation: 一个表面发射激光器,其中一端从近45°角的小平面垂直发射光,包括具有垂直小面的第二端,光从该垂直面垂直射出,用于监视。 表面发射激光器包括位于近45°凸面的上表面上的发散补偿透镜。
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公开(公告)号:US08064493B2
公开(公告)日:2011-11-22
申请号:US12725894
申请日:2010-03-17
Applicant: Alex Behfar , Cristian Stagarescu
Inventor: Alex Behfar , Cristian Stagarescu
IPC: H01S5/00
CPC classification number: H01S5/18 , G02B6/4214 , H01S5/02284 , H01S5/0264 , H01S5/028 , H01S5/0654 , H01S5/1085 , H01S5/125 , H01S5/22 , H01S5/4031 , H01S5/4087 , H01S2301/18
Abstract: A surface emitting photonic device including a substrate; and a waveguide structure on the substrate. The waveguide structure includes an active region along its longitudinal axis and the active region is for generating light. The waveguide structure also has a trench formed therein transverse to the active region and defining a first wall forming an angled facet at one end of the active region, the first wall having a normal that is at a non-parallel angle relative to the longitudinal axis of the waveguide structure. The trench also defines a second wall located opposite the first wall.
Abstract translation: 包括衬底的表面发射光子器件; 以及衬底上的波导结构。 波导结构包括沿其纵向轴线的有源区域,并且有源区域用于产生光。 波导结构还具有横向于有源区域形成的沟槽,并且限定在有源区域的一端处形成成角度的小面的第一壁,第一壁具有相对于纵向轴线成非平行角度的法线 的波导结构。 沟槽还限定了与第一壁相对的第二壁。
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公开(公告)号:US08014434B2
公开(公告)日:2011-09-06
申请号:US12208988
申请日:2008-09-11
Applicant: Alex Behfar , Malcolm Green , Norman Kwong , Cristian Stagaresen
Inventor: Alex Behfar , Malcolm Green , Norman Kwong , Cristian Stagaresen
IPC: H01S3/08
CPC classification number: H01S5/12 , H01S5/028 , H01S5/1021 , H01S5/1039 , H01S5/18 , H01S5/4025
Abstract: A semiconductor chip has at least two DFB etched facet laser cavities with one set of facets with AR coatings and a second set of etched facets with HR coatings that have a different relative position with respect to the gratings. This creates a difference in the phase between each of the etched facets and the gratings which changes the operational characteristics of the two laser cavities such that at least one of the lasers provides acceptable performance. As a result, the two cavity arrangement greatly improves the yield of the fabricated chips.
Abstract translation: 半导体芯片具有至少两个具有AR涂层的DFB刻蚀小面激光腔,其具有一组具有AR涂层的刻面,以及具有HR涂层的第二组蚀刻刻面,其具有相对于光栅的不同相对位置。 这产生了每个蚀刻面和光栅之间的相位的差异,其改变了两个激光腔的操作特性,使得至少一个激光器提供可接受的性能。 结果,两个腔体布置大大地提高了所制造的芯片的产量。
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公开(公告)号:US20060187985A1
公开(公告)日:2006-08-24
申请号:US11356203
申请日:2006-02-17
Applicant: Alex Behfar
Inventor: Alex Behfar
CPC classification number: H01S5/323 , G02F1/17 , H01S5/0042 , H01S5/0201 , H01S5/0202 , H01S5/0203 , H01S5/028 , H01S5/0282 , H01S5/16 , H01S5/22 , H01S5/2214
Abstract: Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.
Abstract translation: 半导体光子器件表面被电介质或金属保护层覆盖。 保护层覆盖整个设备,包括在有源区域附近的面的区域,以防止裸露或未受保护的半导体区域,由此形成非常高可靠性的蚀刻面光子器件。
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公开(公告)号:US20050147145A1
公开(公告)日:2005-07-07
申请号:US10929718
申请日:2004-08-31
Applicant: Alex Behfar , Kiyofumi Muro , Cristian Stagarescu , Alfred Schremer
Inventor: Alex Behfar , Kiyofumi Muro , Cristian Stagarescu , Alfred Schremer
IPC: G02B5/28 , H01S20060101 , H01S3/03 , H01S3/08 , H01S5/00 , H01S5/026 , H01S5/0625 , H01S5/10 , H01S5/125 , H01S5/14 , H01S5/22 , H01S5/343
CPC classification number: H01S5/0625 , B82Y20/00 , H01S5/0264 , H01S5/06256 , H01S5/0655 , H01S5/1017 , H01S5/1021 , H01S5/1039 , H01S5/125 , H01S5/141 , H01S5/22 , H01S5/343 , H01S5/34313
Abstract: A single-mode, etched facet distributed Bragg reflector laser includes an AlGaInAs/InP laser cavity, a front mirror stack with multiple Fabry-Perot elements, a rear DBR reflector, and a rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets, and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer by a two-step lithography and CAIBE process.
Abstract translation: 单模蚀刻刻面分布布拉格反射激光器包括AlGaInAs / InP激光腔,具有多个法布里 - 珀罗元件的前镜叠层,后DBR反射器和后检测器。 前反射镜堆叠元件和后反射器元件包括输入和输出蚀刻刻面,并且激光腔是蚀刻的脊腔,全部由外延晶片通过两步光刻和CAIBE工艺形成。
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公开(公告)号:US20120077294A1
公开(公告)日:2012-03-29
申请号:US13273421
申请日:2011-10-14
Applicant: Alex Behfar , Cristian Stagarescu
Inventor: Alex Behfar , Cristian Stagarescu
IPC: H01L33/10
CPC classification number: H01S5/18 , G02B6/4214 , H01S5/02284 , H01S5/0264 , H01S5/028 , H01S5/0654 , H01S5/1085 , H01S5/125 , H01S5/22 , H01S5/4031 , H01S5/4087 , H01S2301/18
Abstract: A surface emitting photonic device including a substrate; and a waveguide structure on the substrate. The waveguide structure includes an active region along its longitudinal axis and the active region is for generating light. The waveguide structure also has a trench formed therein transverse to the active region and defining a first wall forming an angled facet at one end of the active region, the first wall having a normal that is at a non-parallel angle relative to the longitudinal axis of the waveguide structure. The trench also defines a second wall located opposite the first wall.
Abstract translation: 包括衬底的表面发射光子器件; 以及衬底上的波导结构。 波导结构包括沿其纵向轴线的有源区域,并且有源区域用于产生光。 波导结构还具有横向于有源区域形成的沟槽,并且限定在有源区域的一端形成倾斜小面的第一壁,第一壁具有相对于纵向轴线成非平行角度的法线 的波导结构。 沟槽还限定了与第一壁相对的第二壁。
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公开(公告)号:US20050232326A1
公开(公告)日:2005-10-20
申请号:US11105552
申请日:2005-04-14
Applicant: Alex Behfar , Malcolm Green , Alfred Schremer
Inventor: Alex Behfar , Malcolm Green , Alfred Schremer
IPC: G02B6/12 , G02B6/122 , G02B6/13 , G02F1/017 , H01S5/00 , H01S5/026 , H01S5/028 , H01S5/0683 , H01S5/10 , H01S5/22 , H01S5/343
CPC classification number: B82Y20/00 , G02B6/12002 , G02B6/12004 , G02B6/122 , G02B6/131 , G02B2006/12104 , G02F1/01708 , G02F2202/102 , H01S5/005 , H01S5/0071 , H01S5/026 , H01S5/0265 , H01S5/028 , H01S5/0683 , H01S5/1014 , H01S5/1017 , H01S5/1021 , H01S5/1032 , H01S5/22 , H01S5/34306
Abstract: A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.
Abstract translation: 激光和电吸收调制器(EAM)通过蚀刻小面工艺单片集成。 晶片上的外延层包括用于激光结构的第一层和用于EAM结构的第二层。 激光与EAM之间的强光耦合通过使用两个45度的转向镜将光从激光波导垂直传播到EAM波导来实现。 使用定向角蚀刻工艺来形成两个成角度的小平面。
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公开(公告)号:US06790689B2
公开(公告)日:2004-09-14
申请号:US10326084
申请日:2002-12-23
Applicant: Alex Behfar
Inventor: Alex Behfar
IPC: H01L2100
CPC classification number: H01S5/1071 , Y10S438/94
Abstract: A ring-type laser including a traveling wave cavity which incorporates at least first and second straight cavity sections and at least one curved cavity section. Corresponding first ends of the straight cavity sections are interconnected at a first light-emitting facet, and second ends of the straight sections are interconnected by the curved waveguide. Additional curved and straight sections can be linked to provide various ring configurations.
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