公开(公告)号：US20230420910A1

公开(公告)日：2023-12-28

申请号：US18209008

申请日：2023-06-13

Applicant: Sumitomo Electric Industries, Ltd. ,  FOUR TECHNOS Co., Ltd.

Inventor： Munetaka KUROKAWA ,  Naoki FUJIWARA ,  Takehiko KIKUCHI ,  Kazuo KASAYA ,  Takeshi MARUYAMA

IPC: H01S5/0236 ,  C04B37/00

CPC classification number: H01S5/0236 ,  C04B37/001 ,  H01S5/0201

Abstract: A bonding device includes an irradiator that irradiates a surface of a first component with ultraviolet rays, and a conveyor that conveys the first component, wherein the irradiator irradiates the first component held by the conveyor with the ultraviolet ray, and the conveyor conveys the first component irradiated with the ultraviolet rays to a surface of a second component, and brings the surface of the first component and the surface of the second component into contact with each other to bond the first component and the second component.

公开(公告)号：US20180278024A1

公开(公告)日：2018-09-27

申请号：US15762277

申请日：2016-09-22

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Stephan Gronenborn ,  Michael Miller ,  Peter Dannberg ,  Mark Schuermann ,  Holger Moench

IPC: H01S5/183 ,  H01S5/42 ,  H01S5/042 ,  H01S5/028

CPC classification number: H01S5/18388 ,  H01S5/0042 ,  H01S5/0201 ,  H01S5/0283 ,  H01S5/0421 ,  H01S5/423 ,  H01S2301/17

Abstract: The invention describes a light emitting device (100). The light emitting device (100) comprises at least one light emitting structure (110), at least one processing layer (120) and at least one optical structure (130). The optical structure (130) comprises at least one material processed by means of processing light (150). The at least one processing layer (120) is arranged to reduce reflection of the processing light (150) in a direction of the optical structure (130) at least by 50%, preferably at least by 80%, more preferably at least by 95% and most preferably at least by 99% during processing of the material by means of the processing light (150). It is a basic idea of the present invention to incorporate a non- or low-reflective processing layer (120) on top of a light emitting structure (110) like a VCSEL array in order to enable on wafer processing of light emitting structures (130) like microlens arrays. The invention further describes a method of manufacturing such a light emitting device (100).

公开(公告)号：US10038298B2

公开(公告)日：2018-07-31

申请号：US15829151

申请日：2017-12-01

Applicant: MACOM Technology Solutions Holdings, Inc.

Inventor： Alex A. Behfar ,  Malcolm R. Green ,  Cristian Stagarescu

IPC: H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/02 ,  H01S5/10 ,  H01S5/343 ,  H01S5/12 ,  H01S5/223 ,  G01R31/26 ,  H01S5/028

CPC classification number: H01S5/0014 ,  G01R31/26 ,  G01R31/2635 ,  H01S5/0042 ,  H01S5/0201 ,  H01S5/0203 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/1014 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/34333

Abstract: A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in the epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.

公开(公告)号：US20170330800A1

公开(公告)日：2017-11-16

申请号：US15531210

申请日：2015-11-27

Applicant: SILTECTRA GmbH

Inventor： Christian Beyer ,  Jan Richter

IPC: H01L21/78 ,  B23K26/38 ,  H01S5/02 ,  B23K26/00 ,  B23K101/40

CPC classification number: H01L21/7813 ,  B23K26/0006 ,  B23K26/38 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/56 ,  H01L21/78 ,  H01S5/0201

Abstract: The invention relates to a method for creating a detachment area (2) in a solid (1), in particular for detaching the solid (1) along the separating region (2). Said solid portion (12) that is to be detached is thinner than the solid body (1) from which the solid portion (12) has been removed. According to the invention, said method preferably comprises at least the following steps: the crystal lattice of the solid (1) is modified by means of a modifying agent, in particular by means of at least one laser, in particular a pico- or femtosecond laser. The modifications, in particular the laser beams penetrate into the solid (1) via a surface (5) of the solid portion (12) which is to be detached, several modifications (9) are created in the crystal lattice, said crystal lattice penetrates, following said modifications (9), in the areas surrounding the modifications (9), at least in one particular part.

公开(公告)号：US09608409B2

公开(公告)日：2017-03-28

申请号：US14912196

申请日：2014-08-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Tilman Eckert

IPC: G02B7/02 ,  H01S3/04 ,  H01S5/40 ,  G02B27/09 ,  H01S5/022 ,  H01S5/02

CPC classification number: H01S5/4031 ,  G02B7/025 ,  G02B27/0966 ,  H01S5/0201 ,  H01S5/02252 ,  H01S5/02272 ,  H01S5/02288 ,  H01S5/4025

Abstract: A laser component assembly includes a carrier including first and second component portions wherein each component portion has a chip mounting surface, a lens mounting surface and a stop surface, the stop surface of each component portion includes first and second stop partial surfaces, the first stop partial surface is formed on a first stop element and the second stop partial surface is formed on a second stop element, the chip mounting surface is arranged between the first stop element and the second stop element, the stop surface is oriented perpendicularly to the chip mounting surface, a laser chip arranged on the chip mounting surface, the laser component assembly as a lens bar comprising an optical lens component portion and the lens bar is arranged on the lens mounting surfaces of the component portions and bears against the stop surfaces of the component portions.

公开(公告)号：US20170063034A1

公开(公告)日：2017-03-02

申请号：US15242966

申请日：2016-08-22

Applicant: NICHIA CORPORATION

Inventor： Shingo TANISAKA

IPC: H01S5/022

CPC classification number: H01S5/02252 ,  G02B19/0052 ,  H01L21/67075 ,  H01S3/08059 ,  H01S5/0071 ,  H01S5/0201 ,  H01S5/0203 ,  H01S5/0206 ,  H01S5/02212 ,  H01S5/02296 ,  H01S5/2081 ,  H01S5/2201

Abstract: A method for manufacturing an optical member includes providing a silicon substrate having a first main surface of a {110} plane and a second main surface of a {110} plane that are parallel to each other, forming mask patterns on the first main surface and the second main surface, each of the mask patterns having an opening extending in one direction, so that the opening on a first main surface side and the opening on a second main surface side are disposed alternately, or so that the opening on the second main surface side are disposed directly under the opening on the first main surface side, forming recesses having sloped surfaces in the first main surface side and the second main surface side by wet etching the silicon substrate using the mask patterns as masks, and forming a reflective film on the first main surface or the second main surface.

Abstract translation: 一种制造光学部件的方法包括提供具有彼此平行的{110}面和{110}面的第二主表面的第一主表面和在第一主表面上形成掩模图案的硅基板， 第二主表面，每个掩模图案具有沿一个方向延伸的开口，使得第一主表面侧上的开口和第二主表面侧上的开口交替设置，或者使得第二主表面上的开口 表面侧直接配置在第一主面侧的开口的正下方，通过使用掩模图案作为掩模对硅基板进行湿式蚀刻，形成在第一主表面侧和第二主表面侧具有倾斜表面的凹部，并且形成反射膜 在第一主表面或第二主表面上。

公开(公告)号：US09502857B2

公开(公告)日：2016-11-22

申请号：US14862967

申请日：2015-09-23

Applicant: Seagate Technology LLC

Inventor： Roger L. Hipwell, Jr. ,  Dadi Setiadi

IPC: H01S5/022 ,  H01L21/78 ,  H01L21/683 ,  H01S5/02 ,  G11B5/105 ,  G11B5/31 ,  G11B5/00

CPC classification number: H01S5/02268 ,  G11B5/105 ,  G11B5/3173 ,  G11B2005/0021 ,  H01L21/6836 ,  H01L21/78 ,  H01S5/0201 ,  H01S5/02236 ,  H01S5/02252 ,  H01S5/0226 ,  H01S5/02272

Abstract: A wafer is formed having a plurality of laser-to-slider submount features on a first surface. An etching process is used to form scribe lines between the submounts on the first surface of the wafer. The wafer is separated at the scribe lines to form the submounts.

公开(公告)号：US20160240999A1

公开(公告)日：2016-08-18

申请号：US15041587

申请日：2016-02-11

Applicant: II-VI Incorporated

Inventor： Giovanni Barbarossa ,  Norbert Lichtenstein

IPC: H01S5/022 ,  H01S5/40 ,  H01S5/323 ,  H01S5/024

CPC classification number: H01S5/02236 ,  H01S5/0201 ,  H01S5/0215 ,  H01S5/0224 ,  H01S5/02252 ,  H01S5/02272 ,  H01S5/02469 ,  H01S5/4031

Abstract: A densely-spaced single-emitter laser diode configuration is created, by using a laser bar (or similar array configuration) attached to a submount component of a size sufficient to adequately support the enter laser structure. The surface of the submount component upon which the laser structure is attached is metallized and used to form the individual electrical contacts to the laser diodes within the integrated laser structure. Once attached to each other, the laser structure is singulated by creating vertical separations between adjacent light emission areas. The submount metallization is similarly segmented, creating separate electrodes that are used to individually energize their associated laser diodes.

Abstract translation: 通过使用附接到足以支持进入激光器结构的尺寸的基座部件的激光棒（或类似的阵列配置）来创建密集间隔的单发射器激光二极管配置。 附接有激光结构的基座部件的表面被金属化并且用于在集成激光器结构内的激光二极管上形成各个电接触。 一旦相互连接，通过在相邻的发光区域之间产生垂直分离来对激光器结构进行分割。 基座金属化类似地分段，产生用于单独激励其相关联的激光二极管的单独的电极。

公开(公告)号：US20160141279A1

公开(公告)日：2016-05-19

申请号：US15002333

申请日：2016-01-20

Applicant: Avago Technologies General IP (Singapore) Pte. Ltd.

Inventor： Detlef Bernd Krabe ,  Josef Wittl

IPC: H01L25/16 ,  H01S5/022 ,  H01L31/02 ,  H01L23/538 ,  H01L23/31 ,  H01L31/167

CPC classification number: H01L25/167 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/5386 ,  H01L24/19 ,  H01L24/20 ,  H01L24/25 ,  H01L24/96 ,  H01L24/97 ,  H01L25/165 ,  H01L31/02002 ,  H01L31/0203 ,  H01L31/16 ,  H01L31/167 ,  H01L31/18 ,  H01L33/005 ,  H01L33/52 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/11 ,  H01L2224/12105 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/2518 ,  H01L2224/9222 ,  H01L2933/0033 ,  H01L2933/005 ,  H01S5/0201 ,  H01S5/02248 ,  H01S5/02272 ,  H05K1/181 ,  H05K2201/10121 ,  H05K2201/10727 ,  H05K2201/10977 ,  Y02P70/521

Abstract: Embedded Wafer-Level Packaging (eWLP) devices, packages and assemblies and methods of making them are provided. The eWLP methods allow back side electrical and/or thermal connections to be easily and economically made at the eWLP wafer level without having to use thru-mold vias (TMVs) or thru-silicon vias (TSVs) to make such connections. In order to create TMVs, processes such as reactive ion etching or laser drilling followed metallization are needed, which present difficulties and increase costs. In addition, the eWLP methods allow electrical and optical interfaces to be easily and economically formed on the front side and/or on the back side of the eWLP wafer, which allows the eWLP methods to be used to form optoelectronic devices having a variety of useful configurations.

Abstract translation: 提供嵌入式晶圆级封装（eWLP）器件，封装和组件及其制造方法。 eWLP方法允许在eWLP晶片级别容易且经济地进行背面电气和/或热连接，而不必使用通孔（TMV）或通硅硅通孔（TSV）来进行这种连接。 为了创建TMV，需要诸如反应离子蚀刻或激光钻孔等过程进行金属化处理，从而存在困难并增加成本。 此外，eWLP方法允许在eWLP晶片的前侧和/或背面容易且经济地形成电和光学界面，这允许eWLP方法形成具有各种有用的光电器件 配置

公开(公告)号：US09246306B2

公开(公告)日：2016-01-26

申请号：US14500658

申请日：2014-09-29

Applicant: NICHIA CORPORATION

Inventor： Atsushi Tanaka ,  Mitsuhiro Nonaka

IPC: H01S3/00 ,  H01S5/042 ,  H01S5/02 ,  H01S5/22 ,  H01S5/323

CPC classification number: H01S5/0425 ,  H01S5/0201 ,  H01S5/22 ,  H01S5/32341

Abstract: A semiconductor laser element includes a substrate; a semiconductor layer formed on a front surface of the substrate; a first electrode formed on a back surface of the substrate; a second electrode formed on a front surface of the semiconductor layer; and at least one mark configured to allow reading of predetermined information, the at least one mark being formed in at least one of (i) a position on the surface on which the first electrode is formed, spaced apart from the first electrode and (ii) a position on the surface on which the second electrode is formed, spaced apart from the second electrode. The at least one mark is made of a metal material and has a thickness smaller than a thickness of the electrode that is formed on the surface on which the at least one mark is formed.

Abstract translation: 半导体激光元件包括基板; 形成在所述基板的前表面上的半导体层; 形成在所述基板的背面上的第一电极; 形成在所述半导体层的前表面上的第二电极; 以及至少一个标记，其被配置为允许读取预定信息，所述至少一个标记形成在以下至少一个中：（i）在其上形成有第一电极的表面上的位置与第一电极间隔开，以及 ）在其上形成第二电极的表面上与第二电极间隔开的位置。 所述至少一个标记由金属材料制成，并且其厚度小于形成在其上形成有所述至少一个标记的表面上的电极的厚度。