公开(公告)号：US6118260A

公开(公告)日：2000-09-12

申请号：US429445

申请日：1999-10-28

Applicant: Richard Allen Kirkpatrick, II ,  Mark Robert Plagens

Inventor： Richard Allen Kirkpatrick, II ,  Mark Robert Plagens

IPC: G08C19/02 ,  G05F1/565 ,  G05F3/04

CPC classification number: G08C19/02 ,  G05F1/565

Abstract: A current regulator is provided for a two wire sensor and comprises first and second conductors arranged to provide a sensor output current, a first resistance and a current reference coupled across the first and second conductors, and a second resistance and sensor load terminals coupled across the first and second conductors. An amplifier has first and second inputs and an output. The first input is coupled to a first junction between the first resistance and the current reference, the second input is coupled to a second junction between the second resistance and the sensor load terminals, and the output is connected to the second input. The amplifier controls a first voltage at the first junction to be substantially equal to a second voltage at the second junction.

Abstract translation: 为双线传感器提供电流调节器，并且包括布置成提供传感器输出电流的第一和第二导体，跨越第一和第二导体耦合的第一电阻和电流参考，以及耦合在第一和第二导体上的第二电阻和传感器负载端子 第一和第二导体。 放大器具有第一和第二输入和输出。 第一输入耦合到第一电阻和电流基准之间的第一结，第二输入耦合到第二电阻和传感器负载端之间的第二结，并且输出连接到第二输入。 放大器控制第一结处的第一电压基本上等于第二接合处的第二电压。

公开(公告)号：US20050277246A1

公开(公告)日：2005-12-15

申请号：US11150698

申请日：2005-06-11

Applicant: Allen Kirkpatrick ,  Sean Kirkpatrick ,  Martin Tabat ,  Thomas Tetreault ,  John Borland ,  John Hautala ,  Wesley Skinner

Inventor： Allen Kirkpatrick ,  Sean Kirkpatrick ,  Martin Tabat ,  Thomas Tetreault ,  John Borland ,  John Hautala ,  Wesley Skinner

IPC: H01L21/265 ,  H01L21/38

CPC classification number: H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0812 ,  H01L21/223 ,  H01L21/26513 ,  H01L21/2656 ,  H01L21/26566 ,  H01L21/324

Abstract: Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.

Abstract translation: 使用气体簇离子束在半导体衬底中形成一个或多个掺杂区域和由此形成的半导体结的方法。

公开(公告)号：US06416820B1

公开(公告)日：2002-07-09

申请号：US09443995

申请日：1999-11-19

Applicant: Isao Yamada ,  Jiro Matsuo ,  Teruyuki Kitagawa ,  Allen Kirkpatrick

Inventor： Isao Yamada ,  Jiro Matsuo ,  Teruyuki Kitagawa ,  Allen Kirkpatrick

IPC: C23C1406

CPC classification number: C23C14/5833 ,  B82Y30/00 ,  C23C14/0605 ,  C23C14/58 ,  H01J2237/0812 ,  Y10T428/30

Abstract: A method for enabling the formation of a carbonaceous hard film having a high hardness, strong adherence to the substrate, a wide range of substrate compatibility, and structural stability, which can be formed at room temperature and may cover a large area. The method includes vapor depositing a hard film of a carbonaceous material onto a substrate under vacuum by depositing a vaporized, hydrogen free carbonaceous material, which may be ionized or non-ionized, onto the substrate surface while irradiating the carbonaceous material with gas cluster ions, generated by ionizing gas clusters to form the film.

Abstract translation: 能够形成具有高硬度，对基板的强粘附性，宽范围的基板相容性和结构稳定性的碳质硬膜的方法，其可以在室温下形成并且可以覆盖大面积。 该方法包括在真空下通过将气化的不含氢的含碳材料（其可被离子化或非离子化）沉积到基底表面上同时用气体团簇离子辐射碳质材料，将碳质材料的硬膜蒸发沉积到基底上， 通过电离气体簇形成膜。