公开(公告)号：US20100225989A1

公开(公告)日：2010-09-09

申请号：US12716838

申请日：2010-03-03

Applicant: Andre Anders

Inventor： Andre Anders

IPC: G02F1/19

CPC classification number: G02F1/19 ,  G02F1/0147

Abstract: A phase change material is applied as a very thin film to a transparent substrate such as glass, which material when switched from the amorphous to the crystalline state and back again can affect the reflectivity/transmittance of the combined substrate-coating system. When used with glass panels in the fabrication of relatively large area window glass, the change in spectrally selective transmittance can be used to modulate the amount of sunlight passing through the glass, and thus reduce the amount of cooling required for an interior space in the summertime, and the amount of heating required of that same interior space in the wintertime, while also optimizing the use of visible daylight. Exemplary of a suitable phase change material for glass coating is GeSb or BiSn. Heating of the phase change material to initiate a change in phase can be provided by the application of electric energy, such as supplied from a pulsed power supply, or radiant energy, such as from a laser.

Abstract translation: 将相变材料作为非常薄的薄膜施加到诸如玻璃的透明基板上，该材料从无定形状态切换到结晶状态时，再次返回可影响组合的基底涂覆系统的反射率/透射率。 当在相对大面积的窗玻璃的制造中与玻璃面板一起使用时，可以使用光谱选择性透射率的变化来调节通过玻璃的阳光的量，从而减少夏季内部空间所需的冷却量 ，以及冬季同一内部空间所需的加热量，同时优化可见日光的使用。 用于玻璃涂层的合适的相变材料的示例是GeSb或BiSn。 可以通过施加诸如从脉冲电源提供的电能或诸如激光的辐射能来提供相变材料的加热以引发相位变化。

公开(公告)号：US20100264016A1

公开(公告)日：2010-10-21

申请号：US12797829

申请日：2010-06-10

Applicant: Andre Anders ,  Joakim Andersson

Inventor： Andre Anders ,  Joakim Andersson

IPC: C23C14/34

CPC classification number: C23C14/354 ,  C23C14/16 ,  H01J37/3467

Abstract: A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

Abstract translation: 描述了用于将涂层的非常低压高功率磁控溅射在基底上的方法和装置。 通过本发明的方法，将基材和涂覆目标材料两者放置在可抽空的室中，并将室抽入真空。 此后，一系列高脉冲电压脉冲施加到目标。 几乎与每个脉冲同时地，在一个实施例中，与靶相同材料的小阴极电弧源被脉冲化，触发靠近目标表面的等离子体羽流，从而启动磁控溅射工艺。 在另一个实施例中，使用旨在使位于磁控管靶表面附近的消融靶材料的脉冲激光产生等离子体羽流。

公开(公告)号：US5838522A

公开(公告)日：1998-11-17

申请号：US794672

申请日：1997-02-03

Applicant: Kyriakos Komvopoulos ,  Ian G. Brown ,  Bo Wei ,  Simone Anders ,  Andre Anders ,  C. Singh Bhatia

Inventor： Kyriakos Komvopoulos ,  Ian G. Brown ,  Bo Wei ,  Simone Anders ,  Andre Anders ,  C. Singh Bhatia

IPC: C04B41/00 ,  C04B41/80 ,  C23C14/32 ,  C23C14/48 ,  G11B5/10 ,  G11B5/187 ,  G11B5/255 ,  G11B5/40 ,  G11B5/60 ,  G11B33/10

CPC classification number: C04B41/009 ,  C04B41/0027 ,  C04B41/0054 ,  C04B41/80 ,  C23C14/325 ,  C23C14/48 ,  G11B33/10 ,  G11B5/10 ,  G11B5/187 ,  G11B5/255 ,  G11B5/40 ,  G11B5/6005

Abstract: Surface modification of magnetic recording heads using plasma immersion ion implantation and deposition is disclosed. This method may be carried out using a vacuum arc deposition system with a metallic or carbon cathode. By operating a plasma gun in a long-pulse mode and biasing the substrate holder with short pulses of a high negative voltage, direct ion implantation, recoil implantation, and surface deposition are combined to modify the near-surface regions of the head or substrate in processing times which may be less than 5 min. The modified regions are atomically mixed into the substrate. This surface modification improves the surface smoothness and hardness and enhances the tribological characteristics under conditions of contact-start-stop and continuous sliding. These results are obtained while maintaining original tolerances.

公开(公告)号：US20140284207A1

公开(公告)日：2014-09-25

申请号：US14218434

申请日：2014-03-18

Applicant: Andre Anders ,  Jonathan Kolbeck

Inventor： Andre Anders ,  Jonathan Kolbeck

IPC: C23C14/35

CPC classification number: C23C14/564 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3447 ,  H01J2237/028

Abstract: This disclosure provides systems, methods, and apparatus related to blocking macroparticles in deposition processes utilizing plasmas. In one aspect, an apparatus includes a cathode, a substrate holder, a first magnet, a second magnet, and a structure. The cathode is configured to generate a plasma. The substrate holder is configured to hold a substrate. The first magnet is disposed proximate a first side of the cathode. The second magnet is disposed proximate a second side of the substrate holder. A magnetic field exists between the first magnet and the second magnet and a flow of the plasma substantially follows the magnetic field. The structure is disposed between the second side of the cathode and the first side of the substrate holder and is positioned proximate a region where the magnetic field between the first magnet and the second magnet is weak.

Abstract translation: 本公开提供了在利用等离子体的沉积过程中与阻挡大颗粒相关的系统，方法和装置。 在一个方面，一种装置包括阴极，衬底保持器，第一磁体，第二磁体和结构。 阴极被配置为产生等离子体。 衬底保持器构造成保持衬底。 第一磁体设置在阴极的第一侧附近。 第二磁体设置在衬底保持器的第二侧附近。 在第一磁体和第二磁体之间存在磁场，并且等离子体的流动基本上跟随磁场。 该结构设置在阴极的第二侧和衬底保持器的第一侧之间，并且位于第一磁体和第二磁体之间的磁场较弱的区域附近。

公开(公告)号：US20120138452A1

公开(公告)日：2012-06-07

申请号：US13264692

申请日：2010-04-13

Applicant: Andre Anders

Inventor： Andre Anders

IPC: C23C14/35

CPC classification number: C23C14/35 ,  C23C14/24 ,  C23C14/541 ,  H01J37/3408 ,  H01J37/3467 ,  H01J37/3497

Abstract: A method and apparatus for achieving very high deposition rate magnetron sputtering wherein the surface of a target and especially the race track zone area of the target, in one embodiment may be heated to such a degree that the target material approaches the melting point and sublimation sets in. Controlled heating is achieved primarily through the monitoring of the temperature of the target material and with the aid of a processor subsequently controlling the target temperature by adjustment of the power being inputted to the target. This controlled heating to the sublimation point is particularly effecting in high deposition rate metal coating of parts when used in conjunction with HIPIMS deposition. The apparatus for controlling temperature of the target in one embodiment includes a thermocouple, which is electronically connected to a controller or microcomputer which is programmed to control the power of the pulse to the target, and the duty cycle of the power pulses as the primary means for regulating the temperature of the system.

Abstract translation: 一种用于实现非常高的沉积速率磁控溅射的方法和装置，其中靶的表面，特别是靶的轨道区域区域，在一个实施例中可以被加热到目标材料接近熔点和升华组 控制加热主要通过监测目标材料的温度并借助于处理器随后通过调节输入到目标的功率来控制目标温度来实现。 当与HIPIMS沉积结合使用时，对升华点的受控加热特别地影响部件的高沉积速率金属涂层。 在一个实施例中，用于控制目标温度的装置包括热电偶，其被电连接到被编程为控制到目标的脉冲的功率的控制器或微型计算机，并且功率脉冲的占空比作为主要装置 用于调节系统的温度。

公开(公告)号：US6140773A

公开(公告)日：2000-10-31

申请号：US253268

申请日：1999-02-19

Applicant: Andre Anders ,  Peter A. Maschwitz

Inventor： Andre Anders ,  Peter A. Maschwitz

IPC: H01J37/32 ,  H05H1/24

CPC classification number: H05H1/24 ,  H01J37/32009

Abstract: An apparatus and method for controlling an array of constricted glow discharge chambers are disclosed. More particularly a linear array of constricted glow plasma sources whose polarity and geometry are set so that the contamination and energy of the ions discharged from the sources are minimized. The several sources can be mounted in parallel and in series to provide a sustained ultra low source of ions in a plasma with contamination below practical detection limits. The quality of film along deposition "tracks" opposite the plasma sources can be measured and compared to desired absolute or relative values by optical and/or electrical sensors. Plasma quality can then be adjusted by adjusting the power current values, gas feed pressure/flow, gas mixtures or a combination of some or all of these to improve the match between the measured values and the desired values.

Abstract translation: 公开了一种用于控制辉光放电室的阵列的装置和方法。 更具体地说是一种线性阵列的收缩辉光等离子体源，其极性和几何形状被设置为使得从源放出的离子的污染和能量最小化。 可以并联并串联安装多个源，以在等离子体中提供持续的超低离子源，污染低于实际检测限。 可以测量与等离子体源相对的沉积“轨道”的膜的质量，并通过光学和/或电传感器与期望的绝对值或相对值进行比较。 然后可以通过调整功率电流值，气体进料压力/流量，气体混合物或其中的一些或全部组合来改善等离子体质量，以改善测量值与期望值之间的匹配。

公开(公告)号：US10364489B2

公开(公告)日：2019-07-30

申请号：US15696836

申请日：2017-09-06

Applicant: Andre Anders

Inventor： Andre Anders

IPC: C23C14/30 ,  H05B7/00 ,  C23C14/28 ,  C23C14/14 ,  C23C14/04 ,  H05H7/14

Abstract: This disclosure provides systems, methods, and apparatus related to deposition techniques using laser ablation. In one aspect, an optical fiber and target of a material to be deposited on a first region of an interior surface of a hollow component are positioned in the hollow component. A first end of the optical fiber is coupled to a laser system. A second end of the optical fiber is proximate the target. The material is deposited on the first region of the interior surface of the hollow component by directing a first laser pulse from the laser system through the optical fiber to impinge on the target.

公开(公告)号：US20180073128A1

公开(公告)日：2018-03-15

申请号：US15696836

申请日：2017-09-06

Applicant: Andre Anders

Inventor： Andre Anders

IPC: C23C14/28 ,  C23C14/04 ,  C23C14/14

CPC classification number: C23C14/28 ,  C23C14/046 ,  C23C14/14 ,  H05H7/14

Abstract: This disclosure provides systems, methods, and apparatus related to deposition techniques using laser ablation. In one aspect, an optical fiber and target of a material to be deposited on a first region of an interior surface of a hollow component are positioned in the hollow component. A first end of the optical fiber is coupled to a laser system. A second end of the optical fiber is proximate the target. The material is deposited on the first region of the interior surface of the hollow component by directing a first laser pulse from the laser system through the optical fiber to impinge on the target.

公开(公告)号：US09683285B2

公开(公告)日：2017-06-20

申请号：US14218434

申请日：2014-03-18

Applicant: Andre Anders ,  Jonathan Kolbeck

Inventor： Andre Anders ,  Jonathan Kolbeck

IPC: C23C14/56 ,  C23C14/35 ,  H01J37/34

CPC classification number: C23C14/564 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3447 ,  H01J2237/028

Abstract: This disclosure provides systems, methods, and apparatus related to blocking macroparticles in deposition processes utilizing plasmas. In one aspect, an apparatus includes a cathode, a substrate holder, a first magnet, a second magnet, and a structure. The cathode is configured to generate a plasma. The substrate holder is configured to hold a substrate. The first magnet is disposed proximate a first side of the cathode. The second magnet is disposed proximate a second side of the substrate holder. A magnetic field exists between the first magnet and the second magnet and a flow of the plasma substantially follows the magnetic field. The structure is disposed between the second side of the cathode and the first side of the substrate holder and is positioned proximate a region where the magnetic field between the first magnet and the second magnet is weak.

公开(公告)号：US20090065350A1

公开(公告)日：2009-03-12

申请号：US12205721

申请日：2008-09-05

Applicant: Andre Anders

Inventor： Andre Anders

IPC: C23C14/28

CPC classification number: C23C14/0605 ,  C23C14/06 ,  C23C14/325 ,  H01J37/32055 ,  H01J37/32064 ,  H01J37/32422

Abstract: A dual-cathode arc plasma source is combined with a computer-controlled bias amplifier to synchronize substrate bias with the pulsed production of plasma. Accordingly, bias can be applied in a material-selective way. The principle has been applied to the synthesis metal-doped diamond-like carbon films, where the bias was applied and adjusted when the carbon plasma was condensing, and the substrate was at ground when the metal was incorporated. In doing so, excessive sputtering by too-energetic metal ions can be avoided while the sp3/sp2 ratio can be adjusted. It is shown that the resistivity of the film can be tuned by this species-selective bias. The principle can be extended to multiple-material plasma sources and complex materials.

Abstract translation: 双阴极电弧等离子体源与计算机控制的偏置放大器组合以使衬底偏置与等离子体的脉冲产生同步。 因此，可以以材料选择的方式施加偏压。 该原理已经应用于合成金属掺杂的类金刚石碳膜，其中当碳等离子体冷凝时施加偏压并进行调整，并且当引入金属时，衬底处于研磨状态。 在这样做时，可以避免过度溅射，同时可以调节sp3 / sp2的比例。 显示出膜的电阻率可以通过这种物质选择性偏差进行调节。 该原理可以扩展到多材料等离子体源和复合材料。