公开(公告)号：US5784507A

公开(公告)日：1998-07-21

申请号：US312286

申请日：1994-04-26

Applicant: James W. Holm-Kennedy ,  Koon Wing Tsang ,  Datong Yang

Inventor： James W. Holm-Kennedy ,  Koon Wing Tsang ,  Datong Yang

IPC: G01J3/26 ,  G02B6/12 ,  G02B6/122 ,  G02B6/293

CPC classification number: G02B6/12007 ,  G01J3/0259 ,  G01J3/26 ,  G02B6/1228 ,  G01J3/0256 ,  G02B2006/12109 ,  G02B2006/12173 ,  G02B2006/12195

Abstract: A top incident spectrometer includes a first distributed wavelength wedge filter region of order n.sub.1 that discriminates incoming radiation as a function of wedge location, at least one second wedge region order n.sub.2 (which region may be a graded dielectric film), and an underlying detector array. In another embodiment, a second dielectric wedge element includes a Fabrey-Perot etalon, a wedge dielectric film, or a graded index film matching the second dielectric wedge region to an underlying substrate. One or more slopes associated with wedge elements may also be varied to alter filter characteristics. Spatial characteristics may further be modified by including a dielectric material whose dielectric constant varies as a function of location. Wedge filter crosstalk is minimized by partitioning a wedge dielectric region in the lateral dimension. Another embodiment provides an edge incident spectrometer including an optical waveguide or thin film structure whose spatial optical impedance varies as a function of position. Outcoupling of optical radiation occurs as a function of wavelength along the spectrometer propagation direction. Outcoupling of optical radiation may also be made to overlying structures, or to regions within a common, preferably solid state, structure. Wedge structures may further be combined to intentionally create gaps in the spectral transmission for a filter structure. A shadow masking fabricates thin film elements having spatially varying features. A material is deposited onto a substrate using an edge to provide a shadow mask affecting the deposition stream.

Abstract translation: 顶部入射光谱仪包括第n阶n阶第一分布波长楔形滤波器区域，其区分作为楔形位置的函数的入射辐射，至少一个第二楔形区域阶数n2（该区域可以是渐变电介质膜）和底层检测器阵列 。 在另一个实施例中，第二介电楔形元件包括Fabrey-Perot标准具，楔形电介质膜或将第二介电楔形区域与下面的衬底相匹配的渐变折射率膜。 与楔形元件相关联的一个或多个斜面也可以改变以改变滤波器特性。 通过包括其介电常数随着位置的函数而变化的介电材料可以进一步修改空间特性。 楔形滤波器串扰通过在侧向尺寸上划分楔形电介质区域来最小化。 另一个实施例提供了一种边缘入射光谱仪，其包括光学波导或薄膜结构，其空间光阻抗随着位置的变化而变化。 光辐射的外耦合作为沿着光谱仪传播方向的波长的函数发生。 光辐射的外耦合也可以制成覆盖的结构或共同的，优选固态的结构中的区域。 楔形结构可以进一步组合以有意地在滤波器结构的频谱传输中产生间隙。 阴影掩模制造具有空间变化特征的薄膜元件。 使用边缘将材料沉积到基底上，以提供影响沉积流的荫罩。