公开(公告)号：US07638727B2

公开(公告)日：2009-12-29

申请号：US10513604

申请日：2003-05-07

Applicant: Satyendra Kumar ,  Devendra Kumar ,  Michael L. Dougherty

Inventor： Satyendra Kumar ,  Devendra Kumar ,  Michael L. Dougherty

IPC: B23K10/00 ,  H05H1/46

CPC classification number: B01J19/088 ,  B01J19/126 ,  B01J2219/0879 ,  B01J2219/0892 ,  B01J2219/0894 ,  B82Y30/00 ,  C21D1/34 ,  C21D1/38 ,  C21D1/74 ,  H01J37/3244 ,  H05B6/80 ,  H05H1/46 ,  H05H2001/4607

Abstract: Methods and apparatus for plasma-assisted heat treatments are provided. The method can include initiating a heat treating plasma within a cavity (14) by subjecting a gas to electromagnetic radiation in the presence of a plasma catalyst (70), heating the object by exposing the object to the plasma, and maintaining exposure of the object to the plasma for a sufficient period to alter at least one material property of the object.

Abstract translation: 提供了等离子体辅助热处理的方法和装置。 该方法可以包括通过在等离子体催化剂（70）的存在下对气体进行电磁辐射，在空腔（14）内启动热处理等离子体，通过将物体暴露于等离子体来加热物体，并保持物体的曝光 到等离子体足够的时间以改变物体的至少一种材料性质。

公开(公告)号：US07494904B2

公开(公告)日：2009-02-24

申请号：US10513397

申请日：2003-05-07

Applicant: Satyendra Kumar ,  Devendra Kumar

Inventor： Satyendra Kumar ,  Devendra Kumar

IPC: H01L21/26 ,  H01L21/42

CPC classification number: H01L21/2236 ,  H01J37/32339 ,  H01J37/32412 ,  H05B6/806

Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for various doping processes. In one embodiment, a substrate (250) can be doped by forming a plasma (610) in a cavity (285) by subjecting a gas to an amount of electromagnetic radiation in the presence of a plasma catalyst (240) and adding at least one dopant material to the plasma. The material is then allowed to penetrate into the substrate. Various active and passive catalysts are provided.

Abstract translation: 提供了用于点燃，调制和维持用于各种掺杂过程的等离子体的方法和装置。 在一个实施例中，可以通过在等离子体催化剂（240）的存在下使气体经受一定量的电磁辐射而在空腔（285）中形成等离子体（610）来掺杂衬底（250），并且添加至少一个 掺杂剂材料。 然后使材料渗入基材。 提供了各种主动和被动催化剂。

公开(公告)号：US07432470B2

公开(公告)日：2008-10-07

申请号：US11384126

申请日：2006-03-17

Applicant: Satyendra Kumar ,  Devendra Kumar ,  Dominique Tasch ,  Raimund Stroebel

Inventor： Satyendra Kumar ,  Devendra Kumar ,  Dominique Tasch ,  Raimund Stroebel

IPC: B23K10/00

CPC classification number: H05H1/46 ,  H05H2001/4607

Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for various plasma processes and treatments. Such treatments include cleaning and sterilizing parts. In some embodiments, a plasma is ignited by subjecting a gas in a multi-mode processing cavity to electromagnetic radiation having a frequency between about 1 MHz and about 333 GHz in the presence of a plasma catalyst. A part can be cleaned by, for example, inserting hydrogen into the plasma and exposing the part to the hydrogen-enriched plasma. A part can be sterilized by heating the part with the plasma.

Abstract translation: 提供了用于点燃，调节和维持用于各种等离子体处理和处理的等离子体的方法和装置。 这些处理包括清洁和消毒部件。 在一些实施例中，等离子体通过使多模式处理腔中的气体在等离子体催化剂的存在下具有在约1MHz和约333GHz之间的频率的电磁辐射来点燃。 可以通过例如将氢插入等离子体中并将该部分暴露于富氢等离子体来清洁部件。 可以通过用等离子体加热部件来消毒零件。

公开(公告)号：US20080129208A1

公开(公告)日：2008-06-05

申请号：US11667180

申请日：2005-11-01

Applicant: Satyendra Kumar ,  Devendra Kumar ,  Mike L. Dougherty ,  Kuruvilla Cherian

Inventor： Satyendra Kumar ,  Devendra Kumar ,  Mike L. Dougherty ,  Kuruvilla Cherian

IPC: H05H1/46 ,  B23K9/00 ,  B23K1/012

CPC classification number: B23K1/012 ,  C23C8/38 ,  C23C26/02 ,  H01J37/32192

Abstract: An atmospheric plasma processing system is presented. In accordance with embodiments of the present invention, an atmospheric pressure plasma microwave processing apparatus includes a processing area or chamber wherein parts are processed; at least one multi-mode microwave reactor coupled to receive parts for processing; at least one magnetron coupled to at least one multi-mode microwave reactor to provide microwave energy; and a delivery system coupled to at least one multi-mode microwave reactor to deliver the parts into and out of at least one reactor, wherein a plasma can be generated at atmospheric pressure and provided to the parts in at least one multi-mode microwave reactor.

Abstract translation: 提出了一种大气等离子体处理系统。 根据本发明的实施例，大气压等离子体微波处理设备包括处理区域或室，其中处理部件; 耦合以接收用于处理的部件的至少一个多模式微波反应器; 耦合到至少一个多模微波反应器以提供微波能量的至少一个磁控管; 以及耦合到至少一个多模微波反应器以将部件输送到至少一个反应器中的输送系统，其中等离子体可以在大气压下产生并提供给至少一个多模微波反应器中的部件 。

公开(公告)号：US20060081567A1

公开(公告)日：2006-04-20

申请号：US10513605

申请日：2003-05-07

Applicant: Michael Dougherty ,  Devendra Kumar ,  Satyendra Kumar

Inventor： Michael Dougherty ,  Devendra Kumar ,  Satyendra Kumar

IPC: B23K9/00

CPC classification number: B23K10/02 ,  H05H1/46 ,  H05H2001/4607

Abstract: Methods and apparatus are provided for plasma-assisted processing multiple work pieces in a manufacturing line. In one embodiment, the method can include placing the work pieces in movable carriers, moving the carriers on a conveyor into an irradiation zone, flowing a gas into the irradiation zone, igniting the gas in the irradiation zone to form a plasma (e.g., by subjecting the gas to electromagnetic radiation in the presence of a plasma catalyst), sustaining the plasma for a period of time sufficient to at least partially plasma process at least one of the work pieces in the irradiation zone, and advancing the conveyor to move the at least one plasma-processed work piece out of the irradiation zone. Various types of plasma catalysts are also provided.

公开(公告)号：US20050233091A1

公开(公告)日：2005-10-20

申请号：US10513221

申请日：2003-05-07

Applicant: Devendra Kumar ,  Satyendra Kumar

Inventor： Devendra Kumar ,  Satyendra Kumar

IPC: C23C16/00 ,  C23C16/452 ,  H05H1/24

CPC classification number: C23C16/452 ,  B82Y30/00 ,  H01J37/3244 ,  H05H1/46 ,  H05H2001/4607

Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining plasma (615) for various coating processes. In one embodiment, the surface of an object can be coated (247) by forming plasma in a cavity (230) with walls (232) by subjecting a gas to an amount of electromagnetic radiation power via electrode (270) and a voltage supply (275) in the presence of a plasma catalyst (240) in mount (245) and adding at least one coating material to the plasma. The material is allowed to deposit on the surface of the object (250) on mount (260) to form a coating (247). Various plasma catalysts are also provided.

Abstract translation: 提供用于点燃，调节和维持等离子体（615）的方法和装置用于各种涂覆过程。 在一个实施例中，可以通过经由电极（270）和电压源（270）将气体经受一定量的电磁辐射功率，通过在具有壁（232）的空腔（230）中形成等离子体来涂覆物体的表面（247） 275），并且在所述等离子体中添加至少一种涂层材料。 允许材料沉积在载体（260）上的物体（250）的表面上以形成涂层（247）。 还提供了各种等离子体催化剂。

公开(公告)号：US20050179135A1

公开(公告)日：2005-08-18

申请号：US11105250

申请日：2005-04-13

Applicant: Devendra Kumar

Inventor： Devendra Kumar

IPC: H01L23/522 ,  H01L21/768 ,  H01L29/02 ,  H01L23/48

CPC classification number: H01L21/76835 ,  H01L21/76807 ,  H01L21/7682

Abstract: A semiconductor device having a hollow structure includes: a substrate on which a wiring layer is formed; a low-dielectric layer with a porosity of 6% to 25% having vias and trenches and having voids between adjacent vias; and a contact layer of copper with which the vias and trenches are filled. The contact layer is in contact with the wiring layer and an upper surface of the contact layer is exposed from the dielectric layer.

Abstract translation: 具有中空结构的半导体器件包括：其上形成有布线层的基板; 具有孔隙率为6％至25％的低电介质层，具有通孔和沟槽，并且在相邻过孔之间具有空隙; 以及填充有通孔和沟槽的铜的接触层。 接触层与布线层接触，接触层的上表面从电介质层露出。

公开(公告)号：US6090689A

公开(公告)日：2000-07-18

申请号：US34445

申请日：1998-03-04

Applicant: Devendra Kumar Sadana ,  Orin Wayne Holland

Inventor： Devendra Kumar Sadana ,  Orin Wayne Holland

IPC: H01L21/762 ,  H01L21/76

CPC classification number: H01L21/76243

Abstract: A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Abstract translation: 描述了一种用于形成上绝缘体的方法，其包括以下步骤：在升高的温度下将氧离子注入到硅衬底中，以较低的剂量离子注入低于200℃的氧气以形成非晶硅层;以及 退火步骤以单独形成有缺陷的单晶硅和多晶硅或多晶硅的混合物，然后形成来自非晶硅层的氧化硅，以在硅衬底的表面下方形成连续的氧化硅层，以提供分离的表面硅层。 本发明克服了形成不连续掩埋氧化层的氧化硅的孤立孤岛的问题。

公开(公告)号：US6043166A

公开(公告)日：2000-03-28

申请号：US961131

申请日：1997-10-30

Applicant: Peter Roitman ,  Devendra Kumar Sadana

Inventor： Peter Roitman ,  Devendra Kumar Sadana

IPC: H01L21/265 ,  H01L21/762

CPC classification number: H01L21/26533 ,  H01L21/76243

Abstract: An SOI substrate and method of forming is described incorporating the steps of implanting oxygen under two conditions and performing two high temperature anneals at temperatures above 1250.degree. C. and above 1300.degree. C., respectively, at two respective oxygen concentrations. The invention overcomes the problem of high SOI substrate fabrication cost due to ion implant time and of getting high quality buried oxide (BOX) layers below a thin layer of single crystal silicon.

Abstract translation: 描述SOI衬底和形成方法，其包括在两个条件下注入氧气的步骤，并且在两个相应的氧浓度下分别在高于1250℃和高于1300℃的温度下进行两个高温退火。 本发明克服了由于离子注入时间导致的高SOI衬底制造成本以及在单晶硅薄层之下获得高质量埋藏氧化物（BOX）层的问题。

公开(公告)号：US5930643A

公开(公告)日：1999-07-27

申请号：US995585

申请日：1997-12-22

Applicant: Devendra Kumar Sadana ,  Joel P. de Souza

Inventor： Devendra Kumar Sadana ,  Joel P. de Souza

IPC: H01L21/265 ,  H01L21/762

CPC classification number: H01L21/26533 ,  H01L21/76243

Abstract: A method of fabricating a defect induced buried oxide (DIBOX) region in a semiconductor substrate utilizing a first low energy implantation step to create a stable defect region; a second low energy implantation step to create an amorphous layer adjacent to the stable defect region; oxidation and, optionally, annealing, is provided. Silicon-on-insulator (SOI) materials comprising said semiconductor substrate having said DIBOX is also provided herein.

Abstract translation: 利用第一低能量注入步骤在半导体衬底中制造缺陷诱导的掩埋氧化物（DIBOX）区域以产生稳定的缺陷区域的方法; 第二低能量注入步骤，以产生邻近所述稳定缺陷区域的非晶层; 提供氧化和任选的退火。 也提供了包含具有所述DIBOX的所述半导体衬底的绝缘体上硅（SOI）材料。