公开(公告)号：US07034563B1

公开(公告)日：2006-04-25

申请号：US11044771

申请日：2005-01-26

Applicant: Vitali Souchkov ,  Vladimir Faifer ,  Victor Huang ,  Eugene Fukshansky ,  Alexander Artjomov ,  Anatoli Skljarnov

Inventor： Vitali Souchkov ,  Vladimir Faifer ,  Victor Huang ,  Eugene Fukshansky ,  Alexander Artjomov ,  Anatoli Skljarnov

IPC: G01R31/26

CPC classification number: G01R31/2831 ,  G01R31/2648 ,  H01L21/6838

Abstract: The invention relates to metrology of thin dielectric layers on semiconductor wafers, interfaces of dielectric layers to the wafer substrates and substrates properties of semiconductor wafers. The invention allows measurement of the metrology data for thin dielectric layers on semiconductor wafers electrically via using contact electrodes that align their contact surface to the wafer surface locally at the measurement sites.

Abstract translation: 本发明涉及半导体晶片上的薄电介质层的测量，电介质层与晶片衬底的界面以及半导体晶片的衬底特性。 本发明允许通过使用接触电极在半导体晶片上测量薄介电层的测量数据，所述接触电极在测量位置局部地将其接触表面对准晶片表面。

公开(公告)号：US6012600A

公开(公告)日：2000-01-11

申请号：US590030

申请日：1996-02-02

Applicant: Thanh Pham ,  Eugene Fukshansky ,  David Wanamaker

Inventor： Thanh Pham ,  Eugene Fukshansky ,  David Wanamaker

IPC: B65D45/18 ,  H01L21/687

CPC classification number: B65D45/18 ,  H01L21/687

Abstract: A method and apparatus is provided which secures the lid of a processing chamber in abutting engagement with the walls of the chamber to form an airtight processing environment and which provides for the release of pressure within the chamber in the event of a sudden change in pressure such as an over pressure excursion. The method and apparatus generally comprise a clamp member having a base portion for mounting the clamp to a first surface, a contact portion for contacting a second surface and maintaining a desired relationship between the first and second surfaces, and a deflecting portion which allows separation of the first and second surfaces to relieve pressure behind the first or second surface and return to the desired relationship between the first and second surfaces.

Abstract translation: 提供了一种方法和装置，其将处理室的盖与室的壁邻接地接合以形成气密处理环境，并且在压力突然变化的情况下提供室内压力的释放 作为过度压力的旅行。 所述方法和装置通常包括具有用于将夹具安装到第一表面的基部的夹持构件，用于接触第二表面并保持第一和第二表面之间期望的关系的接触部分和允许将第二表面分离的偏转部分 所述第一和第二表面以减轻所述第一或第二表面后面的压力并返回到所述第一和第二表面之间的所需关系。

公开(公告)号：US6019848A

公开(公告)日：2000-02-01

申请号：US749925

申请日：1996-11-13

Applicant: Jonathan Frankel ,  Inna Shmurun ,  Visweswaren Sivaramakrishnan ,  Eugene Fukshansky

Inventor： Jonathan Frankel ,  Inna Shmurun ,  Visweswaren Sivaramakrishnan ,  Eugene Fukshansky

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/511 ,  H01L21/00 ,  H01L21/203 ,  H01L21/205 ,  H01L21/31 ,  C23C16/00

CPC classification number: C23C16/45565 ,  C23C16/4405 ,  C23C16/455 ,  H01L21/67011

Abstract: The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

Abstract translation: 本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。 本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高宽比装置的高质量处理。 在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。 特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。